Optimum Choice of Randomly Oriented Carbon Nanotube Networks for UV-Assisted Gas Sensing Applications.

We investigated the noise and photoresponse characteristics of various optical transparencies of nanotube networks to identify an optimal randomly oriented network of carbon nanotube (CNT)-based devices for UV-assisted gas sensing applications. Our investigation reveals that all of the studied devices demonstrate negative photoconductivity upon exposure to UV light. Our studies confirm the effect of UV irradiation on the electrical properties of CNT networks and the increased photoresponse with decreasing UV light wavelength. We also extend our analysis to explore the low-frequency noise properties of different nanotube network transparencies. Our findings indicate that devices with higher nanotube network transparencies exhibit lower noise levels. We conduct additional measurements of noise and resistance in an ethanol and acetone gas environment, demonstrating the high sensitivity of higher-transparent (lower-density) nanotube networks. Overall, our results indicate that lower-density nanotube networks hold significant promise as a viable choice for UV-assisted gas sensing applications.

Correction: A graphene/h-BN MEMS varactor for sub-THz and THz applications.

Correction for 'A graphene/h-BN MEMS varactor for sub-THz and THz applications' by Piotr A. Drózdz et al., Nanoscale, 2023, https://doi.org/10.1039/d2nr06863j.

A graphene/h-BN MEMS varactor for sub-THz and THz applications.

Recent development of terahertz systems has created the need for new elements operating in this frequency band, i.e., fast tunable devices such as varactors. Here, we present the process flow and characterization of a novel electronic variable capacitor device that is made with the use of 2D metamaterials such as graphene (GR) or hexagonal boron nitride (h-BN). Comb-like structures are etched into a silicon/silicon nitride substrate and a metal electrode is deposited at the bottom. Next, a PMMA/GR/h-BN layer is placed on top of the sample. As voltage is applied between GR and metal, the PMMA/GR/h-BN layer bends towards the bottom electrode thus decreasing the distance between electrodes and changing the capacitance. The high tunability and complementary metal oxide semiconductor (CMOS)-compatible process flow of the platform for our device and its millimeter size make it promising for applications in future electronics and terahertz technologies. The goal of our research is to integrate our device with dielectric rod waveguides, thus making THz phase shifters.

Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation.

The gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced sensing methodology and intermittent UV irradiation. Distinctly different features in 1/f noise spectra for the organic gases measured under UV irradiation and in the dark were observed. The most intense response observed for tetrahydrofuran prompted the decomposition of the DC characteristic, revealing the photoconductive and photogating effect occurring in the graphene channel with the dominance of the latter. Our observations shed light on understanding surface processes at the interface between graphene and volatile organic compounds for graphene-based sensors in ambient conditions that yield enhanced sensitivity and selectivity.

Passive Photonic Integrated Circuits Elements Fabricated on a Silicon Nitride Platform.

The fabrication processes for silicon nitride photonic integrated circuits evolved from microelectronics components technology-basic processes have common roots and can be executed using the same type of equipment. In comparison to that of electronics components, passive photonic structures require fewer manufacturing steps and fabricated elements have larger critical dimensions. In this work, we present and discuss our first results on design and development of fundamental building blocks for silicon nitride integrated photonic platform. The scope of the work covers the full design and manufacturing chain, from numerical simulations of optical elements, design, and fabrication of the test structures to optical characterization and analysis the results. In particular, technological processes were developed and evaluated for fabrication of the waveguides (WGs), multimode interferometers (MMIs), and arrayed waveguide gratings (AWGs), which confirmed the potential of the technology and correctness of the proposed approach.

Implementation of SiN thin film in fiber-optic sensor working in telecommunication range of wavelengths.

Mirrors are used in optical sensors and measurement setups. This creates a demand for mirrors made of new materials and having various properties tailored to specific applications. In this work, we propose silicon covered with a thin silicon nitride layer as a mirror for near-infrared measurements. SiN layer was deposited on a standard silicon wafer with a Low-Pressure Chemical Vapor Deposition furnace. Then, the created layer was investigated using ellipsometry and scanning electron microscope. Subsequently, the mirror was used as a reflecting surface in a Fabry-Perot fiber-optic interferometer. The mirror performance was investigated for wavelengths used in telecomunication (1310 nm and 1550 nm) and then compared with results obtained with the same measurement setup, with a silver mirror instead of silicon covered with SiN, as reference. Results showed that the proposed mirror can replace the silver one with satisfying results for investigated wavelengths.

Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements.

In this study, the resistive switching phenomenon in Al/SiO2/n++-Si structures is observed and studied by means of DC, small-signal admittance, and complex impedance spectroscopy measurements. Possible transport mechanisms in the high and low resistance states are identified. Based on the results of the applied measurement techniques, an electrical equivalent circuit of the structure is proposed. We discuss the effect of parasitic elements influencing the measurement results and show that a proper model can give useful information about the electrical properties of the device. A good agreement between the characteristics of the proposed equivalent circuit and the experimental data, based on different measurement procedures, confirms the validity of the used methodology and its applicability to the electrical characterization of RRAMs.

A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide.

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures-trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching-principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

Influence of the Interactions at the Graphene-Substrate Boundary on Graphene Sensitivity to UV Irradiation.

Graphene is a very promising material for electronics applications. In recent years, its sensitivity to ultraviolet (UV) irradiation has been studied extensively. However, there is no clear answer to the question, which factor has a key influence on the sensitivity of graphene to UV. In order to check the influence of the final substrate on the electrical response, graphene transferred on polymeric and non-polymeric substrate was investigated. To achieve this goal three polymeric and three non-polymeric substrates were tested. The results of the preliminary tests indicated the different character of the reaction on UV irradiation in each of group. To explain the reason of the difference, the complementary studies were done. The samples that were resistant to high temperature were annealed in a vacuum at 500 °C to get rid of water trapped between graphene and the substratum. The samples after annealing reacted less dynamically to UV irradiation. Moreover, the progress of changes in electrical response of the annealed samples had a similar character to the polymeric substrates, with the hydrophobic nature of the surface. These studies clearly prove that the sensitivity of graphene to UV irradiation is influenced by water trapped under the graphene.