Dynamic compensation of stray electric fields in an ion trap using machine learning and adaptive algorithm.

Surface ion traps are among the most promising technologies for scaling up quantum computing machines, but their complicated multi-electrode geometry can make some tasks, including compensation for stray electric fields, challenging both at the level of modeling and of practical implementation. Here we demonstrate the compensation of stray electric fields using a gradient descent algorithm and a machine learning technique, which trained a deep learning network. We show automated dynamical compensation tested against induced electric charging from UV laser light hitting the chip trap surface. The results show improvement in compensation using gradient descent and the machine learner over manual compensation. This improvement is inferred from an increase of the fluorescence rate of 78% and 96% respectively, for a trapped [Formula: see text]Yb[Formula: see text] ion driven by a laser tuned to [Formula: see text] MHz of the [Formula: see text]S[Formula: see text]P[Formula: see text] Doppler cooling transition at 369.5 nm.

Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration.

It is critical to investigate the charge carrier gradient generation in semiconductor junctions with an asymmetric configuration, which can open a new platform for developing lateral photovoltaic and self-powered devices. This paper reports the generation of a charge carrier gradient in a 3C-SiC/Si heterojunction with an asymmetric electrode configuration. 3C-SiC/Si heterojunction devices with different electrode widths were illuminated by laser beams (wavelengths of 405, 521, and 637 nm) and a halogen bulb. The charge carrier distribution along the heterojunction was investigated by measuring the lateral photovoltage generated when the laser spot scans across the 3C-SiC surface between the two electrodes. The highest lateral photovoltage generated is 130.58 mV, measured in the device with an electrode width ratio of 5 and under 637 nm wavelength and 1000 µW illumination. Interestingly, the lateral photovoltage was generated even under uniform illumination at zero bias, which is unusual for the lateral photovoltage, as it can only be generated when unevenly distributed photogenerated charge carriers exist. In addition, the working mechanism and uncovered behavior of the lateral photovoltaic effect are explained based on the generation and separation of electron-hole pairs under light illumination and charge carrier diffusion theory. The finding further elaborates the underlying physics of the lateral photovoltaic effect in nano-heterojunctions and explores its potential in developing optoelectronic sensors.

Laser stabilization to neutral Yb in a discharge with polarization-enhanced frequency modulation spectroscopy.

Isotope selective optical excitation of atoms is important for experiments with neutral atoms, metrology, and work with trapped ions, including quantum information processing. Polarization-enhanced absorption spectroscopy is used to frequency stabilize a tunable external cavity laser diode system at 398.9 nm for isotope selective photoionization of neutral Yb atoms. This spectroscopy technique is used to measure isotope resolved dispersive features from transitions within a see-through configuration ytterbium hollow-cathode discharge lamp. This Doppler-free dichroic polarization spectroscopy is realized by retro-reflecting a laser beam through the discharge and analyzing the polarization dependent absorption with balanced detection. The spectroscopy signal is recovered using lock-in detection of frequency modulation induced by current modulation of the external cavity laser diode. Here, we show an order of magnitude improvement in the long-term stability using polarization-enhanced absorption spectroscopy of Yb compared to polarization spectroscopy.

Multichannel optomechanical switch and locking system for wavemeters.

Here we present a cost-effective multichannel optomechanical switch and software proportional-integral-derivative (PID) controller system for locking multiple lasers to a single-channel commercial wavemeter. The switch is based on a rotating cylinder that selectively transmits one laser beam at a time to the wavemeter. The wavelength is read by the computer, and an error signal is output to the lasers to correct wavelength drifts every millisecond. We use this system to stabilize 740 nm (subsequently frequency doubled to 370 nm), 399 nm, and 935 nm lasers for trapping and cooling different isotopes of a Yb+ ion. We characterize the frequency stability of the three lasers by using a second, more precise, commercial wavemeter. We also characterize the absolute frequency stability of the 740 nm laser using the fluorescence drift rate of a trapped 174Yb+ ion. For the 740 nm laser we demonstrate an Allan deviation σy of 3×10-10 (at 20 s integration time), equivalent to sub-200 kHz stability.

3C-SiC/Si Heterostructure: An Excellent Platform for Position-Sensitive Detectors Based on Photovoltaic Effect.

Single-crystalline silicon carbide (3C-SiC) on the Si substrate has drawn significant attention in recent years due to its low wafer cost and excellent mechanical, chemical, and optoelectronic properties. However, the applications of the structure have primarily been focused on piezoresistive and pressure sensors, bio-microelectromechanical system, and photonics. Herein, we report another promising application of the heterostructure as a laser spot position-sensitive detector (PSD) based on the lateral photovoltaic effect (LPE) under nonuniform optical illuminations at zero-bias conditions. The LPE shows a linear dependence on spot positions, and the sensitivity is found to be as high as 33 mV/mm under an illumination of 2.8 W/cm2 (635 nm). The structure also exhibits a linear dependence of the LPE over a large distance (7 mm) between two electrodes, which is crucial for PSDs as the region with a linear dependence of LPE is only usable for PSDs. The LPE at different spot positions and under different illumination conditions have been investigated and explained based on the energy-band analysis. The temperature dependence of the LPE and position sensitivity is also investigated. Furthermore, the two-dimensional mapping of the lateral photovoltages reveals the potential for utilizing the 3C-SiC/Si heterostructure to detect the laser spot position precisely on a plane.

A single-atom 3D sub-attonewton force sensor.

Forces drive all physical interactions. High-sensitivity measurement of the effect of forces enables the quantitative investigation of physical phenomena. Laser-cooled trapped atomic ions are a well-controlled quantum system whose low mass, strong Coulomb interaction, and readily detectable fluorescence signal make them a favorable platform for precision metrology. We demonstrate a three-dimensional sub-attonewton sensitivity force sensor based on a super-resolution imaging of a single trapped ion. The force is detected by measuring the ion's displacement in three dimensions with nanometer precision. Observed sensitivities were 372 ± 9, 347 ± 18, and 808 ± 51 zN/[Formula: see text], corresponding to 24×, 87×, and 21× above the quantum limit. We verified this technique by measuring a 95-zN light pressure force, an important systematic effect in optically based sensors.

Pushing the Limits of Piezoresistive Effect by Optomechanical Coupling in 3C-SiC/Si Heterostructure.

This letter reports a giant opto-piezoresistive effect in p-3C-SiC/p-Si heterostructure under visible-light illumination. The p-3C-SiC/p-Si heterostructure has been fabricated by growing a 390 nm p-type 3C-SiC on a p-type Si substrate using the low pressure chemical vapor deposition (LPCVD) technique. The gauge factor of the heterostructure was found to be 28 under a dark condition; however, it significantly increased to about -455 under illumination of 635 nm wavelength at 3.0 mW/cm2. This gauge factor is over 200 times higher than that of commercial metal strain gauge, 16 times higher than that of 3C-SiC thinfilm, and approximately 5 times larger than that of bulk Si. This enhancement of the gauge factor was attributed to the opto-mechanical coupling effect in p-3C-SiC/p-Si heterostructure. The opto-mechanical coupling effect is the amplified effect of the photoconductivity enhancement and strain-induced band structure modification in the p-type Si substrate. These findings enable extremely high sensitive and robust mechanical sensors, as well as optical sensors at low cost, as no complicated nanofabrication process is required.

Ultrafast, high repetition rate, ultraviolet, fiber-laser-based source: application towards Yb+ fast quantum-logic.

Trapped ions are one of the most promising approaches for the realization of a universal quantum computer. Faster quantum logic gates could dramatically improve the performance of trapped-ion quantum computers, and require the development of suitable high repetition rate pulsed lasers. Here we report on a robust frequency upconverted fiber laser based source, able to deliver 2.5 ps ultraviolet (UV) pulses at a stabilized repetition rate of 300.00000 MHz with an average power of 190 mW. The laser wavelength is resonant with the strong transition in Ytterbium (Yb+) at 369.53 nm and its repetition rate can be scaled up using high harmonic mode locking. We show that our source can produce arbitrary pulse patterns using a programmable pulse pattern generator and fast modulating components. Finally, simulations demonstrate that our laser is capable of performing resonant, temperature-insensitive, two-qubit quantum logic gates on trapped Yb+ ions faster than the trap period and with fidelity above 99%.

Nine-channel mid-power bipolar pulse generator based on a field programmable gate array.

Many channel arbitrary pulse sequence generation is required for the electro-optic reconfiguration of optical waveguide networks in Lithium Niobate. Here we describe a scalable solution to the requirement for mid-power bipolar parallel outputs, based on pulse patterns generated by an externally clocked field programmable gate array. Positive and negative pulses can be generated at repetition rates up to 80 MHz with pulse width adjustable in increments of 1.6 ns across nine independent outputs. Each channel can provide 1.5 W of RF power and can be synchronised with the operation of other components in an optical network such as light sources and detectors through an external clock with adjustable delay.

Absorption imaging of a single atom.

Absorption imaging has played a key role in the advancement of science from van Leeuwenhoek's discovery of red blood cells to modern observations of dust clouds in stellar nebulas and Bose-Einstein condensates. Here we show the first absorption imaging of a single atom isolated in a vacuum. The optical properties of atoms are thoroughly understood, so a single atom is an ideal system for testing the limits of absorption imaging. A single atomic ion was confined in an RF Paul trap and the absorption imaged at near wavelength resolution with a phase Fresnel lens. The observed image contrast of 3.1 (3)% is the maximum theoretically allowed for the imaging resolution of our set-up. The absorption of photons by single atoms is of immediate interest for quantum information processing. Our results also point out new opportunities in imaging of light-sensitive samples both in the optical and X-ray regimes.

Imaging of trapped ions with a microfabricated optic for quantum information processing.

Trapped ions are a leading system for realizing quantum information processing (QIP). Most of the technologies required for implementing large-scale trapped-ion QIP have been demonstrated, with one key exception: a massively parallel ion-photon interconnect. Arrays of microfabricated phase Fresnel lenses (PFL) are a promising interconnect solution that is readily integrated with ion trap arrays for large-scale QIP. Here we show the first imaging of trapped ions with a microfabricated in-vacuum PFL, demonstrating performance suitable for scalable QIP. A single ion fluorescence collection efficiency of 4.2±1.5% was observed. The depth of focus for the imaging system was 19.4±2.4 µm and the field of view was 140±20 µm. Our approach also provides an integrated solution for high-efficiency optical coupling in neutral atom and solid-state QIP architectures.

Parametric amplification of scattered atom pairs.

We have observed parametric generation and amplification of ultracold atom pairs. A 87Rb Bose-Einstein condensate was loaded into a one-dimensional optical lattice with quasimomentum k0 and spontaneously scattered into two final states with quasimomenta k1 and k2 . Furthermore, when a seed of atoms was first created with quasimomentum k1 we observed parametric amplification of scattered atoms pairs in states k1 and k2 when the phase-matching condition was fulfilled. This process is analogous to optical parametric generation and amplification of photons and could be used to efficiently create entangled pairs of atoms. Furthermore, these results explain the dynamic instability of condensates in moving lattices observed in recent experiments.

Continuous and pulsed quantum zeno effect.

Continuous and pulsed quantum Zeno effects were observed using a 87Rb Bose-Einstein condensate. Oscillations between two ground hyperfine states of a magnetically trapped condensate, externally driven at a transition rate omega(R), were suppressed by destructively measuring the population in one of the states with resonant light. The suppression of the transition rate in the two-level system was quantified for pulsed measurements with a time interval deltat between pulses and continuous measurements with a scattering rate gamma. We observe that the continuous measurements exhibit the same suppression in the transition rate as the pulsed measurements when gammadeltat=3.60(0.43), in agreement with the predicted value of 4. Increasing the measurement rate suppressed the transition rate down to 0.005 omega(R).

Photon recoil momentum in dispersive media.

A systematic shift of the photon recoil momentum due to the index of refraction of a dilute gas of atoms has been observed. The recoil frequency was determined with a two-pulse light grating interferometer using near-resonant laser light. The results show that the recoil momentum of atoms caused by the absorption of a photon is n variant Planck's k, where n is the index of refraction of the gas and k is the vacuum wave vector of the photon. This systematic effect must be accounted for in high-precision atom interferometry with light gratings.

The onset of matter-wave amplification in a superradiant Bose-Einstein condensate.

The interaction of short and strong laser pulses with an atomic Bose-Einstein condensate is found to generate patterns of recoiling atoms that are different from those seen in previous light-scattering experiments. This phenomenon can only be explained by optical stimulation, showing that the previous description of superradiance as atomic stimulation is incomplete and that matter-wave amplification in Bose-Einstein condensates is suppressed at short times. Our experiments clarify the nature of bosonic stimulation in the four-wave mixing of light and atoms.