Electrical manipulation of telecom color centers in silicon.

Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by implementing novel lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.24 ± 0.08 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters.

Processing light with an optically tunable mechanical memory.

Mechanical systems are one of the promising platforms for classical and quantum information processing and are already widely-used in electronics and photonics. Cavity optomechanics offers many new possibilities for information processing using mechanical degrees of freedom; one of them is storing optical signals in long-lived mechanical vibrations by means of optomechanically induced transparency. However, the memory storage time is limited by intrinsic mechanical dissipation. More over, in-situ control and manipulation of the stored signals processing has not been demonstrated. Here, we address both of these limitations using a multi-mode cavity optomechanical memory. An additional optical field coupled to the memory modifies its dynamics through time-varying parametric feedback. We demonstrate that this can extend the memory decay time by an order of magnitude, decrease its effective mechanical dissipation rate by two orders of magnitude, and deterministically shift the phase of a stored field by over 2π. This further expands the information processing toolkit provided by cavity optomechanics.

Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures.

The controlled creation of defect centre-nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ∼2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ∼51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ∼1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.