Estimation of phase distortions of the photoplethysmographic signal in digital IIR filtering.

Pre-processing of the photoplethysmography (PPG) signal plays an important role in the analysis of the pulse wave signal. The task of pre-processing is to remove noise from the PPG signal, as well as to transmit the signal without any distortions for further analysis. The integrity of the pulse waveform is essential since many cardiovascular parameters are calculated from it using morphological analysis. Digital filters with infinite impulse response (IIR) are widely used in the processing of PPG signals. However, such filters tend to change the pulse waveform. The aim of this work is to quantify the PPG signal distortions that occur during IIR filtering in order to select a most suitable filter and its parameters. To do this, we collected raw finger PPG signals from 20 healthy volunteers and processed them by 5 main digital IIR filters (Butterworth, Bessel, Elliptic, Chebyshev type I and type II) with varying parameters. The upper cutoff frequency varied from 2 to 10 Hz and the filter order-from 2nd to 6th. To assess distortions of the pulse waveform, we used the following indices: skewness signal quality index (SSQI), reflection index (RI) and ejection time compensated (ETc). It was found that a decrease in the upper cutoff frequency leads to damping of the dicrotic notch and a phase shift of the pulse wave signal. The minimal distortions of a PPG signal are observed when using Butterworth, Bessel and Elliptic filters of the 2nd order. Therefore, we can recommend these filters for use in applications aimed at morphological analysis of finger PPG waveforms of healthy subjects.

Excitonic Mechanisms of Stimulated Emission in Low-Threshold ZnO Microrod Lasers with Whispering Gallery Modes.

Whispering gallery mode (WGM) ZnO microlasers gain attention due to their high Q-factors and ability to provide low-threshold near-UV lasing. However, a detailed understanding of the optical gain mechanisms in such structures has not yet been achieved. In this work, we study the mechanisms of stimulated emission (SE) in hexagonal ZnO microrods, demonstrating high-performance WGM lasing with thresholds down to 10-20 kW/cm2 and Q-factors up to ~3500. The observed SE with a maximum in the range of 3.11-3.17 eV at room temperature exhibits a characteristic redshift upon increasing photoexcitation intensity, which is often attributed to direct recombination in the inverted electron-hole plasma (EHP). We show that the main contribution to room-temperature SE in the microrods studied, at least for near-threshold excitation intensities, is made by inelastic exciton-electron scattering rather than EHP. The shape and perfection of crystals play an important role in the excitation of this emission. At lower temperatures, two competing gain mechanisms take place: exciton-electron scattering and two-phonon assisted exciton recombination. The latter forms emission with a maximum in the region near ~3.17 eV at room temperature without a significant spectral shift, which was observed only from weakly faceted ZnO microcrystals in this study.

Morphology and Luminescence of Flexible Free-Standing ZnO/Zn Composite Films Grown by Vapor Transport Synthesis.

A method for fabricating flexible free-standing ZnO/Zn composite films from the vapor phase using a regular array of silicon microwhiskers as a substrate is presented. The structural and morphological peculiarities, as well as luminescent properties of the films, were studied. The films have a hybrid structure consisting of two main microlayers. The first layer is formed directly on the tops of Si whiskers and has a thickness up to 10 µm. This layer features a polycrystalline structure and well-developed surface morphology. The second layer, which makes up the front side of the films, is up to 100 µm thick and consists of large microcrystals. The films show good bending strength-in particular, resistance to repeated bending and twisting-which is provided by a zinc metallic part constituting the flexible carrier of the films. ZnO photoluminescence was observed from both surfaces of the films but with conspicuous spectral differences. In particular, a significant weakening of ZnO green luminescence (more than 10 times) at an almost constant intensity of UV near-band edge emission was found for the polycrystalline side of the films as compared to the microcrystalline side. A high degree of homogeneity of the luminescent properties of the films over their area was demonstrated. The results obtained emphasize the relevance of further studies of such ZnO structures-in particular, for application in flexible devices, sensors, photocatalysis and light generation.

Interference Phenomena and Stimulated Emission in ZnO Films on Sapphire.

We studied the texturing, roughness, and morphology features of ZnO films grown on the R (11¯02)-, M (101¯0)-, A (112¯0)-, and C (0001)-planes of sapphire, as well as their optical and luminescent properties. We showed that the growth conditions, substrate orientation, and the presence of a buffer layer significantly affected the structure and morphology of the growing films, which was reflected in their optical and radiative properties. In particular, films grown on the A- and M- planes of sapphire showed the highest UV radiation brightness values and exhibited stimulated emissions upon pulsed photoexcitation. The dependence of the topography of the film surface on the substrate orientation allowed the formation of a smooth continuous film with pronounced interference properties using the R- and M- planes of sapphire. A change in the crystallographic orientation, as well as a significant enhancement in crystallinity and luminescence, were observed for ZnO films grown on R-plane sapphire substrates with a gold buffer layer as compared to films grown on bare substrates. At the same time, the use of gold facilitates a significant smoothing of the film's surface, retaining its interference properties. The sensitivity of interference and laser properties to changes in the external environment, as well as the ease of fabrication of such structures, create prospects for their application as key elements of optical converters, chemical and biological sensors, and sources of coherent radiation.

Ultraviolet Luminescence of ZnO Whiskers, Nanowalls, Multipods, and Ceramics as Potential Materials for Fast Scintillators.

The presented work is dedicated to the study and comparison of scintillating properties of zinc oxide samples prepared in different morphologies: whiskers, nanowalls, multipods, and ceramics. It was shown that total transmittance, photo- and radioluminescence spectra, and radioluminescence kinetics can vary significantly depending on sample structure and preparation conditions. The highest total transmittance was registered for ZnO ceramics (>50% at 0.5 mm thickness). Differences in the transmittance of whiskers, nanowalls, and multipods can be attributed to their shape and thickness which affects the amount of light refraction and scattering. The study of radioluminescence demonstrated that all samples, except undoped ceramics and air annealed whiskers, have predominantly fast luminescence with a decay time <1 ns. High transmittance of ceramics opens the way for their use in the registration of high energy X-ray and gamma radiation, where a large volume of scintillators is required. In cases, where large scintillator thickness is not a necessity, one may prefer to use other ZnO structures, such as ensembles of whiskers and nanowalls. Studies of near-band-edge luminescence components at low temperatures showed that the structure is quite similar in all samples except Ga doped ceramics.