RESUMO
Controllable writing and deleting of nanoscale magnetic skyrmions are key requirements for their use as information carriers for next-generation memory and computing technologies. While several schemes have been proposed, they require complex fabrication techniques or precisely tailored electrical inputs, which limits their long-term scalability. Here, we demonstrate an alternative approach for writing and deleting skyrmions using conventional electrical pulses within a simple, two-terminal wire geometry. X-ray microscopy experiments and micromagnetic simulations establish the observed skyrmion creation and annihilation as arising from Joule heating and Oersted field effects of the current pulses, respectively. The unique characteristics of these writing and deleting schemes, such as spatial and temporal selectivity, together with the simplicity of the two-terminal device architecture, provide a flexible and scalable route to the viable applications of skyrmions.
RESUMO
Although Si acts as an electrical semiconductor, it has properties of an optical dielectric. Here, we revisit the behavior of Si as a plasmonic metal. This behavior was previously shown to arise from strong interband transitions that lead to negative permittivity of Si across the ultraviolet spectral range. However, few have studied the plasmonic characteristics of Si, particularly in its nanostructures. In this paper, we report localized plasmon resonances of Si nanostructures and the observation of plasmon hybridization in the UV (â¼250 nm wavelength). In addition, simulation results show that Si nanodisk dimers can achieve a local intensity enhancement greater than â¼500-fold in a 1 nm gap. Lastly, we investigate hybrid Si-Al nanostructures to achieve sharp resonances in the UV, due to the coupling between plasmon resonances supported by Si and Al nanostructures. These results will have potential applications in the UV range, such as nanostructured devices for spectral filtering, plasmon-enhanced Si photodetectors, interrogation of molecular chirality, and catalysis. It could have significant impact on UV photolithography on patterned Si structures.
RESUMO
We report transport measurements of dual gated MoS2 and WSe2 devices using atomic layer deposition grown Al2O3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.
RESUMO
High-k, low leakage thin films are crucial components for dynamic random access memory (DRAM) capacitors with high storage density and a long storage lifetime. In this work, we demonstrate a method to increase the dielectric constant and decrease the leakage current density of atomic layer deposited BaTiO3 thin films at low process temperature (250 °C) using postdeposition remote oxygen plasma treatment. The dielectric constant increased from 51 (as-deposited) to 122 (plasma-treated), and the leakage current density decreased by 1 order of magnitude. We ascribe such improvements to the crystallization and densification of the film induced by high-energy ion bombardments on the film surface during the plasma treatment. Plasma-induced crystallization presented in this work may have an immediate impact on fabricating and manufacturing DRAM capacitors due to its simplicity and compatibility with industrial standard thin film processes.
RESUMO
We present two methods for the precise independent focusing of orthogonal linear polarizations of light at arbitrary relative locations. Our first scheme uses a displaced lens in a polarization Sagnac interferometer to provide adjustable longitudinal and lateral focal displacements via simple geometry; the second uses uniaxial crystals to achieve the same effect in a compact collinear setup. We develop the theoretical applications and limitations of our schemes, and provide experimental confirmation of our calculations.