Intrinsic Control of Interlayer Exciton Generation in Van der Waals Materials via Janus Layers.

We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. We investigate different MoS2@Janus layer combinations using first-principles methods including excitons and exciton-phonon coupling. The direction of the intrinsic electric field from the Janus layer modifies the electronic band alignments and, consequently, the energy separation between dark interlayer exciton states and bright in-plane excitons. We find that in-plane lattice vibrations strongly couple the two states, so that exciton-phonon scattering may be a viable generation mechanism for interlayer excitons upon light absorption. In particular, in the case of MoS2@WSSe, the energy separation of the low-lying interlayer exciton from the in-plane exciton is resonant with the transverse optical phonon modes (40 meV). We thus identify this heterobilayer as a prime candidate for efficient generation of charge-separated electron-hole pairs.

Identification of OLED Degradation Scenarios by Kinetic Monte Carlo Simulations of Lifetime Experiments.

We show how three-dimensions kinetic Monte Carlo simulations can be used to carry out an operational lifetime study of thermally activated delayed fluorescence (TADF) organic light-emitting diodes (OLEDs) and to deduce the sensitivity to various degradation scenarios. The approach is demonstrated for an experimentally well-characterized efficient green-emitting device. The simulation workflow includes an equilibration phase, an equilibrated pristine state phase and a degradation phase. Acceleration of the simulations by extrapolation from simulations at large current densities makes the simulation time realistically feasible. Such a procedure is also often followed in experimental studies. Degradation is assumed to be triggered by exciton-polaron quenching and exciton-exciton annihilation processes. A comparison of the simulated and experimental time-dependence of the luminance decay provides the probability that a degradation-triggering event leads to the formation of a degraded molecule. For the TADF OLED that has been studied, this parameter is only weakly dependent on the assumed scenario, provided that the degraded molecules are assumed to form trap sites, and is found to be ∼ ( 0.2 - 0.7 ) × 1 0 - 9 . The approach is expected to enable systematic in silico studies of the operational lifetime and its sensitivity to the material composition, layer structure, charge carrier balance, and the use of refined device principles such as hyperfluorescence.

Photoinduced Phase Transitions in Ferroelectrics.

Ferroic materials naturally exhibit a rich number of functionalities, which often arise from thermally, chemically, or mechanically induced symmetry breakings or phase transitions. Based on density functional calculations, we demonstrate here that light can drive phase transitions as well in ferroelectric materials such as the perovskite oxides lead titanate and barium titanate. Phonon analysis and total energy calculations reveal that the polarization tends to vanish under illumination, to favor the emergence of nonpolar phases, potentially antiferroelectric, and exhibiting a tilt of the oxygen octahedra. Strategies to tailor photoinduced phases based on phonon instabilities in the electronic ground state are also discussed.

Optical control of polarization in ferroelectric heterostructures.

In the ferroelectric devices, polarization control is usually accomplished by application of an electric field. In this paper, we demonstrate optically induced polarization switching in BaTiO3-based ferroelectric heterostructures utilizing a two-dimensional narrow-gap semiconductor MoS2 as a top electrode. This effect is attributed to the redistribution of the photo-generated carriers and screening charges at the MoS2/BaTiO3 interface. Specifically, a two-step process, which involves formation of intra-layer excitons during light absorption followed by their decay into inter-layer excitons, results in the positive charge accumulation at the interface forcing the polarization reversal from the upward to the downward direction. Theoretical modeling of the MoS2 optical absorption spectra with and without the applied electric field provides quantitative support for the proposed mechanism. It is suggested that the discovered effect is of general nature and should be observable in any heterostructure comprising a ferroelectric and a narrow gap semiconductor.

Strong dichroic emission in the pseudo one dimensional material ZrS3.

Zirconium trisulphide (ZrS3), a member of the layered transition metal trichalcogenides (TMTCs) family, has been studied by angle-resolved photoluminescence spectroscopy (ARPLS). The synthesized ZrS3 layers possess a pseudo one-dimensional nature where each layer consists of ZrS3 chains extending along the b-lattice direction. Our results show that the optical properties of few-layered ZrS3 are highly anisotropic as evidenced by large PL intensity variation with the polarization direction. Light is efficiently absorbed when the E-field is polarized along the chain (b-axis), but the field is greatly attenuated and absorption is reduced when it is polarized vertical to the 1D-like chains as the wavelength of the exciting light is much longer than the width of each 1D chain. The observed PL variation with polarization is similar to that of conventional 1D materials, i.e., nanowires, and nanotubes, except for the fact that here the 1D chains interact with each other giving rise to a unique linear dichroism response that falls between the 2D (planar) and 1D (chain) limit. These results not only mark the very first demonstration of PL polarization anisotropy in 2D systems, but also provide novel insight into how the interaction between adjacent 1D-like chains and the 2D nature of each layer influences the overall optical anisotropy of pseudo-1D materials. Results are anticipated to have an impact on optical technologies such as polarized detectors, near-field imaging, communication systems, and bio-applications relying on the generation and detection of polarized light.

Unusual lattice vibration characteristics in whiskers of the pseudo-one-dimensional titanium trisulfide TiS3.

Transition metal trichalcogenides form a class of layered materials with strong in-plane anisotropy. For example, titanium trisulfide (TiS3) whiskers are made out of weakly interacting TiS3 layers, where each layer is made of weakly interacting quasi-one-dimensional chains extending along the b axis. Here we establish the unusual vibrational properties of TiS3 both experimentally and theoretically. Unlike other two-dimensional systems, the Raman active peaks of TiS3 have only out-of-plane vibrational modes, and interestingly some of these vibrations involve unique rigid-chain vibrations and S-S molecular oscillations. High-pressure Raman studies further reveal that the AgS-S S-S molecular mode has an unconventional negative pressure dependence, whereas other peaks stiffen as anticipated. Various vibrational modes are doubly degenerate at ambient pressure, but the degeneracy is lifted at high pressures. These results establish the unusual vibrational properties of TiS3 with strong in-plane anisotropy, and may have relevance to understanding of vibrational properties in other anisotropic two-dimensional material systems.

Nitrogenated, phosphorated and arsenicated monolayer holey graphenes.

Motivated by a recent experiment that reported the synthesis of a new 2D material nitrogenated holey graphene (C2N) [Mahmood et al., Nat. Commun., 2015, 6, 6486], the electronic, magnetic, and mechanical properties of nitrogenated (C2N), phosphorated (C2P) and arsenicated (C2As) monolayer holey graphene structures are investigated using first-principles calculations. Our total energy calculations indicate that, similar to the C2N monolayer, the formation of the other two holey structures are also energetically feasible. Calculated cohesive energies for each monolayer show a decreasing trend going from the C2N to C2As structure. Remarkably, all the holey monolayers considered are direct band gap semiconductors. Regarding the mechanical properties (in-plane stiffness and Poisson ratio), we find that C2N has the highest in-plane stiffness and the largest Poisson ratio among the three monolayers. In addition, our calculations reveal that for the C2N, C2P and C2As monolayers, creation of N and P defects changes the semiconducting behavior to a metallic ground state while the inclusion of double H impurities in all holey structures results in magnetic ground states. As an alternative to the experimentally synthesized C2N, C2P and C2As are mechanically stable and flexible semiconductors which are important for potential applications in optoelectronics.