Rethinking tolerance factor analysis for chalcogenide perovskites.

Tolerance factor analysis has been widely used to predict suitable compositions for oxide and halide perovskites. However, in the case of the emerging chalcogenide perovskites, the predictions from the tolerance factor have failed to align with experimental observations. In this work, we reconsider how tolerance factor is being applied, specifically adjusting for the effect of increased covalency of bonding on the ionic radii. Further, we propose a series of screening steps based on the octahedral factor, tolerance factor, and electronegativity difference to better predict the formation of sulfide perovskites.

Solution processed metal chalcogenide semiconductors for inorganic thin film photovoltaics.

Thin film photovoltaics are a key part of both current and future solar energy technologies and have been heavily reliant on metal chalcogenide semiconductors as the absorber layer. Developing solution processing methods to deposit metal chalcogenide semiconductors offers the promise of low-cost and high-throughput fabrication of thin film photovoltaics. In this review article we lay out the key chemistry and engineering that has propelled research on solution processing of metal chalcogenide semiconductors, focusing on Cu(In,Ga)(S,Se)2 as a model system. Further, we expand on how this methodology can be extended to other emerging metal chalcogenide materials like Cu2ZnSn(S,Se)4, copper pnictogen sulfides, and chalcogenide perovskites. Finally, we discuss future opportunities in this field of research, both considering fundamental and applied perspectives. Overall, this review can serve as a roadmap to researchers tackling challenges in solution processed metal chalcogenides to better accelerate progress on thin films photovoltaics and other semiconductor applications.

Molecular Precursor Approach to Sulfur-Free CuInSe2: Replacing Thiol Coordination in Soluble Metal Complexes.

Solution-processed CuInSe2 films have generally relied on sulfide or sulfoselenide precursor films that, during the grain growth process, hamper the growth of thicker films and lead to the formation of a fine-grain layer. However, recent research has indicated that sulfur reduction in the precursor film modifies the grain growth mechanism and may enable the fabrication of thicker absorbers that are free of any fine-grain layer. In this work, we pursue direct solution deposition of sulfur-free CuInSe2 films from the molecular precursor approach. To this end, we tune the amine-thiol reactive solvent system and study the changes to the resulting soluble complexes through a combination of analytical techniques. We show that by reactively dissolving indium(III) selenide and selenium in solutions of n-butylamine and 1,2-ethanedithiol, a metal thiolate species is formed, and that this metal thiolate can be modified by isolation from the thiol-containing solvent via precipitation. As the quantity of selenium in the ink increases, the thiol content in the complex decreases, eventually producing soluble [InSex]- species. Extending this method to be used with copper selenide as a copper source, molecular precursor inks can be made for solution-processed, sulfur-free CuInSe2 films. We then show that these CuInSe2 precursor films can be fully coarsened without a fine-grain layer formation, even at the desired thicknesses of 2 µm and greater.

Synthesis of BaZrS3 and BaHfS3 Chalcogenide Perovskite Films Using Single-Phase Molecular Precursors at Moderate Temperatures.

Chalcogenide perovskites have garnered interest for applications in semiconductor devices due to their excellent predicted optoelectronic properties and stability. However, high synthesis temperatures have historically made these materials incompatible with the creation of photovoltaic devices. Here, we demonstrate the solution processed synthesis of luminescent BaZrS3 and BaHfS3 chalcogenide perovskite films using single-phase molecular precursors at sulfurization temperatures of 575 °C and sulfurization times as short as one hour. These molecular precursor inks were synthesized using known carbon disulfide insertion chemistry to create Group 4 metal dithiocarbamates, and this chemistry was extended to create species, such as barium dithiocarboxylates, that have never been reported before. These findings, with added future research, have the potential to yield fully solution processed thin films of chalcogenide perovskites for various optoelectronic applications.

Solution Deposition for Chalcogenide Perovskites: A Low-Temperature Route to BaMS3 Materials (M = Ti, Zr, Hf).

Chalcogenide perovskites, including BaZrS3, have been suggested as highly stable alternatives to halide perovskites. However, the synthesis of chalcogenide perovskites has proven to be a significant challenge, often relying on excessively high temperatures and methods that are incompatible with device integration. In this study, we developed a solution-based approach to the deposition of BaZrS3. This method utilizes a combination of a soluble barium thiolate and nanoparticulate zirconium hydride. Following solution-based deposition of the precursors and subsequent sulfurization, BaZrS3 can be obtained at temperatures as low as 500 °C. Furthermore, this method was extended to other chalcogenide perovskite (BaHfS3) and perovskite-related (BaTiS3) materials.