A Valleytronic Diamond Transistor: Electrostatic Control of Valley Currents and Charge-State Manipulation of NV Centers.

The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices requires all-electric control of long-lived valley-polarized states, without the use of strong external magnetic fields. Because of the extreme strength of the carbon-carbon bond, diamond possesses exceptionally stable valley states that provide a useful platform for valleytronic devices. Using ultrapure single-crystalline diamond, we demonstrate electrostatic control of valley currents in a dual-gate field-effect transistor, where the electrons are generated with a short ultraviolet pulse. The charge current and the valley current measured at the receiving electrodes are controlled separately by varying the gate voltages. We propose a model to interpret experimental data, based on drift-diffusion equations coupled through rate terms, with the rates computed by microscopic Monte Carlo simulations. As an application, we demonstrate valley-current charge-state modulation of nitrogen-vacancy centers.

Correlating Thermionic Emission with Specific Surface Reconstructions in a <100> Hydrogenated Single-Crystal Diamond.

Thermionic emission relies on the low work function and negative electron affinity of the, often functionalized, surface of the emitting material. However, there is little understanding of the interplay between thermionic emission and temperature-driven dynamic surface transformation processes as these are not represented on the traditional Richardson-Dushman equation for thermionic emission. Here, we show a new model for thermionic emission that can reproduce the effect of dynamic surface changes on the electron emission and correlate the components of the thermionic emission with specific surface reconstruction phases on the surface of the emitter. We use hydrogenated <100> single-crystal and polycrystalline diamonds as thermionic emitters to validate our model, which shows excellent agreement with the experimental data and could be applicable to other emitting materials. Furthermore, we find that tailoring the coverage of specific structures of the C(100)-(2 × 1):H surface reconstruction could increase the thermionic emission of diamond by several orders of magnitude.

Multidimensional luminescence microscope for imaging defect colour centres in diamond.

We report a multidimensional luminescence microscope providing hyperspectral imaging and time-resolved (luminescence lifetime) imaging for the study of luminescent diamond defects. The instrument includes crossed-polariser white light transmission microscopy to reveal any birefringence that would indicate strain in the diamond lattice. We demonstrate the application of this new instrument to detect defects in natural and synthetic diamonds including N3, nitrogen and silicon vacancies. Hyperspectral imaging provides contrast that is not apparent in conventional intensity images and the luminescence lifetime provides further contrast.

Observation of an environmentally insensitive solid-state spin defect in diamond.

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV0). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV0 SiV0 exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with ~90% of its emission into the zero-phonon line and near-transform-limited optical linewidths. These combined properties make SiV0 a promising defect for quantum network applications.

Deterministic delivery of remote entanglement on a quantum network.

Large-scale quantum networks promise to enable secure communication, distributed quantum computing, enhanced sensing and fundamental tests of quantum mechanics through the distribution of entanglement across nodes1-7. Moving beyond current two-node networks8-13 requires the rate of entanglement generation between nodes to exceed the decoherence (loss) rate of the entanglement. If this criterion is met, intrinsically probabilistic entangling protocols can be used to provide deterministic remote entanglement at pre-specified times. Here we demonstrate this using diamond spin qubit nodes separated by two metres. We realize a fully heralded single-photon entanglement protocol that achieves entangling rates of up to 39 hertz, three orders of magnitude higher than previously demonstrated two-photon protocols on this platform 14 . At the same time, we suppress the decoherence rate of remote-entangled states to five hertz through dynamical decoupling. By combining these results with efficient charge-state control and mitigation of spectral diffusion, we deterministically deliver a fresh remote state with an average entanglement fidelity of more than 0.5 at every clock cycle of about 100 milliseconds without any pre- or post-selection. These results demonstrate a key building block for extended quantum networks and open the door to entanglement distribution across multiple remote nodes.

Publisher Correction: Deterministic delivery of remote entanglement on a quantum network.

Change history: In this Letter, the received date should be 20 December 2017, instead of 27 April 2018. This has been corrected online.

Efficient photon collection from a nitrogen vacancy center in a circular bullseye grating.

Efficient collection of the broadband fluorescence from the diamond nitrogen vacancy (NV) center is essential for a range of applications in sensing, on-demand single photon generation, and quantum information processing. Here, we introduce a circular "bullseye" diamond grating which enables a collected photon rate of (2.7 ± 0.09) × 10(6) counts per second from a single NV with a spin coherence time of 1.7 ± 0.1 ms. Back-focal-plane studies indicate efficient redistribution of the NV photoluminescence into low-NA modes by the bullseye grating.

Coherent spin control of a nanocavity-enhanced qubit in diamond.

A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Among solid-state systems, the nitrogen-vacancy centre in diamond has emerged as an excellent optically addressable memory with second-scale electron spin coherence times. Recently, quantum entanglement and teleportation have been shown between two nitrogen-vacancy memories, but scaling to larger networks requires more efficient spin-photon interfaces such as optical resonators. Here we report such nitrogen-vacancy-nanocavity systems in the strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 µs using a silicon hard-mask fabrication process. This spin-photon interface is integrated with on-chip microwave striplines for coherent spin control, providing an efficient quantum memory for quantum networks.

Generation, transport and detection of valley-polarized electrons in diamond.

Standard electronic devices encode bits of information by controlling the amount of electric charge in the circuits. Alternatively, it is possible to make devices that rely on other properties of electrons than their charge. For example, spintronic devices make use of the electron spin angular momentum as a carrier of information. A new concept is valleytronics in which information is encoded by the valley quantum number of the electron. The analogy between the valley and spin degrees of freedom also implies the possibility of valley-based quantum computing. In this Article, we demonstrate for the first time generation, transport (across macroscopic distances) and detection of valley-polarized electrons in bulk diamond with a relaxation time of 300 ns at 77 K. We anticipate that these results will form the basis for the development of integrated valleytronic devices.

Opening up three quantum boxes causes classically undetectable wavefunction collapse.

One of the most striking features of quantum mechanics is the profound effect exerted by measurements alone. Sophisticated quantum control is now available in several experimental systems, exposing discrepancies between quantum and classical mechanics whenever measurement induces disturbance of the interrogated system. In practice, such discrepancies may frequently be explained as the back-action required by quantum mechanics adding quantum noise to a classical signal. Here, we implement the "three-box" quantum game [Aharonov Y, et al. (1991) J Phys A Math Gen 24(10):2315-2328] by using state-of-the-art control and measurement of the nitrogen vacancy center in diamond. In this protocol, the back-action of quantum measurements adds no detectable disturbance to the classical description of the game. Quantum and classical mechanics then make contradictory predictions for the same experimental procedure; however, classical observers are unable to invoke measurement-induced disturbance to explain the discrepancy. We quantify the residual disturbance of our measurements and obtain data that rule out any classical model by ≳7.8 standard deviations, allowing us to exclude the property of macroscopic state definiteness from our system. Our experiment is then equivalent to the test of quantum noncontextuality [Kochen S, Specker E (1967) J Math Mech 17(1):59-87] that successfully addresses the measurement detectability loophole.

High carrier mobility in single-crystal plasma-deposited diamond.

Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determined by using the time-of-flight technique on thick, intrinsic, freestanding diamond plates and were verified by current-voltage measurements on p-i junction diodes. The improvement of the electronic properties of single-crystal diamond and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.