Determination of Crystal-Field Splitting Induced by Thermal Oxidation of Titanium.

The electronic structure of transition-metal oxides is a key component responsible for material's optical and chemical properties. Specifically for metal-oxide structures, the crystal-field interaction determines the shape, strength, and occupancy of electronic orbitals. Consequently, the crystal-field splitting and resulting unoccupied state populations can be foreseen as modeling factors of the photochemical activity. Herein, we study the formation of crystal-field effects during thermal oxidation of titanium in an ambient atmosphere and range of temperatures. The X-ray absorption spectroscopy is employed for quantitative analysis of average t2g-eg crystal-field splitting (Δoct) and relative t2g/eg bands occupancy. The obtained result shows that Δoct changes as a function of temperature from 1.97 eV for a passive oxide layer created on a Ti metal surface at room temperature to 2.41 eV at 600 °C when the material changes into the TiO2 rutile phase. On the basis of XAS data analysis, we show that the Δoct values determined from L2 and L3 absorption edges are equal, indicating that the 2p1/2 and 2p3/2 core holes screen the t2g and eg electronic states in a similar manner.

In situ observation of charge transfer and crystal field formation via high energy resolution X-ray spectroscopy during temperature programmed oxidation.

Herein, it has been demonstrated how resonant X-ray emission spectroscopy can be employed to study the charge transfer dynamics in real-time during the temperature-induced oxidation of metallic tungsten. Application of high energy resolution schemes allowed distinguishing charge transfer to separate orbitals resulting from crystal field splitting. Based on the time-resolved studies, it was possible to determine the corresponding charge transfer rates. From the experimental data, we determined that the electron transfer during the thermal oxidation of the metal dominates in the temperature range of 470-570 °C, reaching a maximum of 0.036 electrons per °C.

Core-level nonlinear spectroscopy triggered by stochastic X-ray pulses.

Stochastic processes are highly relevant in research fields as different as neuroscience, economy, ecology, chemistry, and fundamental physics. However, due to their intrinsic unpredictability, stochastic mechanisms are very challenging for any kind of investigations and practical applications. Here we report the deliberate use of stochastic X-ray pulses in two-dimensional spectroscopy to the simultaneous mapping of unoccupied and occupied electronic states of atoms in a regime where the opacity and transparency properties of matter are subject to the incident intensity and photon energy. A readily transferable matrix formalism is presented to extract the electronic states from a dataset measured with the monitored input from a stochastic excitation source. The presented formalism enables investigations of the response of the electronic structure to irradiation with intense X-ray pulses while the time structure of the incident pulses is preserved.

The influence of nitrogen doping on the electronic structure of the valence and conduction band in TiO2.

X-ray emission spectroscopy (XES) and X-ray absorption spectroscopy (XAS) provide a unique opportunity to probe both the highest occupied and the lowest unoccupied states in matter with bulk sensitivity. In this work, a combination of valence-to-core XES and pre-edge XAS techniques are used to determine changes induced in the electronic structure of titanium dioxide doped with nitrogen atoms. Based on the experimental data it is shown that N-doping leads to incorporation of the p-states on the occupied electronic site. For the conduction band, a decrease in population of the lowest unoccupied d-localized orbitals with respect to the d-delocalized orbitals is observed. As confirmed by theoretical calculations, the N p-states in TiO2 structure are characterized by higher binding energy than the O p-states which gives a smaller value of the band-gap energy for the doped material.