A Low-Cost and Lithium-Free Hole Transport Layer for Efficient and Stable Normal Perovskite Solar Cells.

The most widely used material as a hole-transport layer (HTL) for effective normal perovskite solar cells (PSCs) is still 2,2',7,7'-Tetrakis[N, N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), which requires heavy doping with the hydroscopic Lithium bis(trifluoromethanesulfonyl)imide (Li-ΤFSI). However, the long-term stability and performance of PCSs are frequently hampered by the residual insoluble dopants in the HTL, Li+ diffusion throughout the device, dopant by-products, and the hygroscopic nature of Li-TFSI. Due to the high cost of Spiro-OMeTAD, alternative efficient low-cost HTLs, such as octakis(4-methoxyphenyl)spiro[fluorene-9,9'-xanthene]-2,2',7,7'-tetraamine) (X60), have attracted attention. However, they require doping with Li-TFSI, and the devices develop the same Li-TFSI-derived problems. Here, we propose Li-free 1-Ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide (EMIM-TFSI) as an efficient p-type dopant of X60, resulting in a high-quality HTL with enhanced conductivity and deeper energy levels The optimized X60:EMIM-TFSI-enabled devices exhibit a higher efficiency of 21.85% and improved stability, compared to the Li-TFSI-doped X60 devices. The stability of the optimized EMIM-TFSI-doped PSCs is greatly improved, and after 1200 hr of storage under ambient conditions, the resulting PSCs maintain 85% of the initial PCE. These findings offer a fresh method for doping the cost effective X60 as the HTL with a Li-free alternative dopant for efficient, cheaper, and reliable planar PSCs.

Two-dimensional BiTeI as a novel perovskite additive for printable perovskite solar cells.

Hybrid organic-inorganic perovskite solar cells (PSCs) are attractive printable, flexible, and cost-effective optoelectronic devices constituting an alternative technology to conventional Si-based ones. The incorporation of low-dimensional materials, such as two-dimensional (2D) materials, into the PSC structure is a promising route for interfacial and bulk perovskite engineering, paving the way for improved power conversion efficiency (PCE) and long-term stability. In this work, we investigate the incorporation of 2D bismuth telluride iodide (BiTeI) flakes as additives in the perovskite active layer, demonstrating their role in tuning the interfacial energy-level alignment for optimum device performance. By varying the concentration of BiTeI flakes in the perovskite precursor solution between 0.008 mg mL-1 and 0.1 mg mL-1, a downward shift in the energy levels of the perovskite results in an optimal alignment of the energy levels of the materials across the cell structure, as supported by device simulations. Thus, the cell fill factor (FF) increases with additive concentration, reaching values greater than 82%, although the suppression of open circuit voltage (V oc) is reported beyond an additive concentration threshold of 0.03 mg mL-1. The most performant devices delivered a PCE of 18.3%, with an average PCE showing a +8% increase compared to the reference devices. This work demonstrates the potential of 2D-material-based additives for the engineering of PSCs via energy level optimization at perovskite/charge transporting layer interfaces.

Inverted perovskite solar cells with enhanced lifetime and thermal stability enabled by a metallic tantalum disulfide buffer layer.

Perovskite solar cells (PSCs) have proved their potential for delivering high power conversion efficiencies (PCE) alongside low fabrication cost and high versatility. The stability and the PCE of PSCs can readily be improved by implementing engineering approaches that entail the incorporation of two-dimensional (2D) materials across the device's layered configuration. In this work, two-dimensional (2D) 6R-TaS2 flakes were exfoliated and incorporated as a buffer layer in inverted PSCs, enhancing the device's PCE, lifetime and thermal stability. A thin buffer layer of 6R-TaS2 flakes was formed on top of the electron transport layer to facilitate electron extraction, thus improving the overall device performance. The optimized devices reach a PCE of 18.45%, representing a 12% improvement compared to the reference cell. The lifetime stability measurements of the devices under ISOS-L2, ISOS-D1, ISOS-D1I and ISOS-D2I protocols revealed that the TaS2 buffer layer retards the intrinsic, thermally activated degradation processes of the PSCs. Notably, the devices retain more than the 80% of their initial PCE over 330 h under continuous 1 Sun illumination at 65 °C.