Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway.

Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures offer promising alternative materials for next-generation high-density memory devices. The complex vertical stacking process of memory devices significantly increases the probability of encountering internal contact issues. Conventional surface treatment methods developed for planar devices necessitate efficient approaches to eliminate contact issues at deep internal interfaces in the nanoscale complex structures of AOS devices. In this work, we report the pioneering use of palladium thin film as a high-efficiency active hydrogen transfer pathway from the outside to the internal contact interface via low-temperature postannealing in the H2 atmosphere, and the formation of highly conductive metallic interlayer effectively solves the contact issues at the deeply buried interfaces in devices. The application of this method reduced the contact resistance of Pd electrodes/amorphous indium-gallium-zinc oxide (a-IGZO) thin-film by 2 orders of magnitude, and thereby the mobility of thin-film transistor was increased from 3.2 cm2 V-1 s-1 to nearly 20 cm2 V-1 s-1, preserving an excellent bias stress stability. This technology has wide applicability for the solution of contact resistance issues in oxide semiconductor devices with complex architectures.

Thermal and Chemical Phase Engineering of Two-Dimensional Ruthenate.

Monolayer ruthenate nanosheets obtained by exfoliating layered ruthenium oxide exhibit excellent electrical conductivity, redox activity, and catalytic activity, which render them suitable for advanced electronic and energy devices. However, to fully exploit the benefits, we require further structural insights into a complex polymorphic nature and diversity in relevant electronic states of two-dimensional (2D) ruthenate systems. In this study, the 2D structures, stability, and electronic states of 2D ruthenate are investigated on the basis of thermal and chemical phase engineering approaches. We reveal that contrary to a previous report, exfoliation of an oblique 1T phase precursor leads to nanosheets having an identical phase without exfoliation-induced phase transition to a 1H phase. The oblique 1T phase in the nanosheets is found to be metastable and, thus, transforms successively to a rectangular 1T phase upon heating. A phase-controllable synthesis via Co doping affords nanosheets with metastable rectangular and thermally stable hexagonal 1T phases at a Co content of 5-10 and 20 at%, respectively. The 1T phases show metallic electronic states, where the d-d optical transitions between the Ru 4d (t2g) orbital depend on the symmetry of the Ru framework. The Co doping in ruthenate nanosheets unexpectedly suppresses the redox and catalytic activities under acidic conditions. In contrast, the Co2+/3+ redox pair is activated and produces conductive nanosheets with high electrochemical capacitance in an alkaline condition.

Nanophase-Separated Copper-Zirconia Composites for Bifunctional Electrochemical CO2 Conversion to Formic Acid.

A copper-zirconia composite having an evenly distributed lamellar texture, Cu#ZrO2, was synthesized by promoting nanophase separation of the Cu51Zr14 alloy precursor in a mixture of carbon monoxide (CO) and oxygen (O2). High-resolution electron microscopy revealed that the material consists of interchangeable Cu and t-ZrO2 phases with an average thickness of 5 nm. Cu#ZrO2 exhibited enhanced selectivity toward the generation of formic acid (HCOOH) by electrochemical reduction of carbon dioxide (CO2) in aqueous media at a Faradaic efficiency of 83.5% at -0.9 V versus the reversible hydrogen electrode. In situ Raman spectroscopy has revealed that a bifunctional interplay between the Zr4+ sites and the Cu boundary leads to amended reaction selectivity along with a large number of catalytic sites.

Synthesis and Characterization of the Orthorhombic Sn3 O4 Polymorph.

An unexplored tin oxide crystal phase (Sn3 O4 ) was experimentally synthesized via a facile hydrothermal method. After tuning the often-neglected parameters for the hydrothermal synthesis, namely the degree of filling of the precursor solution and the gas composition in the reactor head space, an unreported X-ray diffraction pattern was discovered. Through various characterization studies, such as Rietveld analysis, energy dispersive X-ray spectroscopy, and first-principles calculations, this novel material was characterized as orthorhombic mixed-valence tin oxide with the composition SnII 2 SnIV O4 . This orthorhombic tin oxide is a new polymorph of Sn3 O4 , which differs from the reported conventional monoclinic structure. Computational and experimental analyses showed that orthorhombic Sn3 O4 has a smaller band gap (2.0 eV), enabling greater absorption of visible light. This study is expected to improve the accuracy of hydrothermal synthesis and aid the discovery of new oxide materials.

Bandgap widening through doping for improving the photocatalytic oxidation ability of narrow-bandgap semiconductors.

The trade-off relationship between narrowing the bandgap and achieving sufficient redox potentials accounts for the hindrance to the development of an efficient photocatalyst. Most of the previous researchers attempt to narrow the bandgap of semiconductors by impurity doping to achieve visible-light sensitivity, but this approach causes the losses of their oxidation and/or reduction ability. Conversely, this study presents a bandgap widening strategy by doping to improve the redox potential of photogenerated carriers. Employing first-principles simulations, we propose the lanthanum-doped bismuth vanadate (La-BiVO4) photocatalyst as a wider-bandgap semiconductor exhibiting stronger oxidation ability compared to pristine BiVO4, and the results revealed that the bismuth orbital in the valence band (VB) was diluted by lanthanum-ion doping, while the VB shifted to a higher potential (positively shifted). Thereafter, a La-BiVO4 powder was synthesized via a solid-state reaction, after which its activity was evaluated in the photocatalytic oxidation of 2-propanol (IPA). La-BiVO4 exhibited bandgap widening; thus, the number of absorbed photons under visible-light irradiation was lower than that of pristine BiVO4. However, the quantum efficiency (QE) of La-BiVO4 for the oxidation of IPA was higher than that of the pristine BiVO4. Consequently, the photocatalytic reaction rate of La-BiVO4 was superior to that of pristine BiVO4 under the same visible-light irradiation conditions. Although the bandgap of La-BiVO4 is widened, it is still sensitive to the cyan-light region, which is the strongest in the sunlight spectrum. These results demonstrate that the orbital dilution strategy by impurity elemental doping is effective for bandgap widening and contributes to improving the oxidation and/or reduction ability of the photogenerated charge carriers. This study elucidates the possibility of boosting photocatalytic performances via bandgap widening.

Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution.

Tin mono-selenide (SnSe) exhibits the world record of thermoelectric conversion efficiency ZT in the single crystal form, but the performance of polycrystalline SnSe is restricted by low electronic conductivity (σ) and high thermal conductivity (κ), compared to those of the single crystal. Here an effective strategy to achieve high σ and low κ simultaneously is reported on p-type polycrystalline SnSe with isovalent Te ion substitution. The nonequilibrium Sn(Se1- x Tex ) solid solution bulks with x up to 0.4 are synthesized by the two-step process composed of high-temperature solid-state reaction and rapid thermal quenching. The Te ion substitution in SnSe realizes high σ due to the 103 -times increase in hole carrier concentration and effectively reduced lattice κ less than one-third at room temperature. The large-size Te ion in Sn(Se1- x Tex ) forms weak SnTe bonds, leading to the high-density formation of hole-donating Sn vacancies and the reduced phonon frequency and enhanced phonon scattering. This result-doping of large-size ions beyond the equilibrium limit-proposes a new idea for carrier doping and controlling thermal properties to enhance the ZT of polycrystalline SnSe.

Origin of Interface Limitation in Zn(O,S)/CuInS2-Based Solar Cells.

Copper indium disulfide (CuInS2) grown under Cu-rich conditions exhibits high optical quality but suffers predominantly from charge carrier interface recombination, resulting in poor solar cell performance. An unfavorable "cliff"-like conduction band alignment at the buffer/CuInS2 interface could be a possible cause of enhanced interface recombination in the device. In this work, we exploit direct and inverse photoelectron spectroscopy together with electrical characterization to investigate the cause of interface recombination in chemical bath-deposited Zn(O,S)/co-evaporated CuInS2-based devices. Temperature-dependent current-voltage analyses indeed reveal an activation energy of the dominant charge carrier recombination path, considerably smaller than the absorber bulk band gap, confirming the dominant recombination channel to be present at the Zn(O,S)/CuInS2 interface. However, photoelectron spectroscopy measurements indicate a small (0.1 eV) "spike"-like conduction band offset at the Zn(O,S)/CuInS2 interface, excluding an unfavorable energy-level alignment to be the prominent cause for strong interface recombination. The observed band bending upon interface formation also suggests Fermi-level pinning not to be the main reason, leaving near-interface defects (as recently observed in Cu-rich CuInSe2) as the likely reason for the performance-limiting interface recombination.

Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO3/LaNiO3/LaAlO3 heterostructure.

An unusually large thermopower (S) enhancement is induced by heterostructuring thin films of the strongly correlated electron oxide LaNiO3. The phonon-drag effect, which is not observed in bulk LaNiO3, enhances S for thin films compressively strained by LaAlO3 substrates. By a reduction in the layer thickness down to three unit cells and subsequent LaAlO3 surface termination, a 10 times S enhancement over the bulk value is observed due to large phonon drag S (Sg), and the Sg contribution to the total S occurs over a much wider temperature range up to 220 K. The Sg enhancement originates from the coupling of lattice vibration to the d electrons with large effective mass in the compressively strained ultrathin LaNiO3, and the electron-phonon interaction is largely enhanced by the phonon leakage from the LaAlO3 substrate and the capping layer. The transition-metal oxide heterostructures emerge as a new playground to manipulate electronic and phononic properties in the quest for high-performance thermoelectrics.

High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film.

In this work, high-performance amorphous In0.75Ga0.23Sn0.02O (a-IGTO) transistors with an atomic layer-deposited Al2O3 dielectric layer were fabricated at a maximum processing temperature of 150 °C. Hydrogen (H) and excess oxygen (Oi) in the Al2O3 film, which was controlled by adjusting the oxygen radical density (PO2: flow rate of O2/[Ar+O2]) in the radio-frequency (rf) plasma during ALD growth of Al2O3, significantly affected the performance and stability of the resulting IGTO transistors. The concentrations of H and Oi in Al2O3/IGTO stacks according to PO2 were characterized by secondary ion mass spectroscopy, X-ray photoelectron spectroscopy, hard X-ray photoemission spectroscopy, and thermal desorption spectroscopy. The high concentration of H at a low PO2 of 2.5% caused heavy electron doping in the underlying IGTO during thermal annealing at 150 °C, leading to a conductive behavior in the resulting transistor without modulation capability. In contrast, a high PO2 condition of 20% introduced O2 molecules (or Oi) into the Al2O3 film, which negatively impacted the carrier mobility and caused anomalous photo-bias instability in the IGTO transistor. Through in-depth understanding of how to manipulate H and Oi in Al2O3 by controlling the PO2, we fabricated high-performance IGTO transistors with a high field-effect mobility (µFE) of 58.8 cm2/Vs, subthreshold gate swing (SS) of 0.12 V/decade, threshold voltage (VTH) of 0.5 V, and ION/OFF ratio of ∼109 even at the maximum processing temperature of 150 °C. Simultaneously, the optimized devices were resistant to exposure to external positive gate bias stress (PBS) and negative bias stress (NBS) for 3600 s, where the VTH shifts for exposure to PBS and NBS for this duration were 0.1 V and -0.15 V, respectively.

Direct observation of spin-resolved valence band electronic states from a buried magnetic layer with hard X-ray photoemission.

We report spin-resolved hard X-ray photoelectron spectroscopy (spin-HAXPES) for a buried Fe thin film in the valence band region. For the spin-HAXPES experiments, we developed an ultracompact built-in Mott-type spin-filter in a sample carrier, which enabled us to use the merit of two-dimensional (2D) multi-channel detector in a recent photoelectron analyser without modifying an apparatus for HAXPES. The effective Sherman function and the single-channel figure of merit (FOM) of the spin-filter were assessed to be -0.07 and 2.0 × 10-4, respectively. By utilizing the 2D detector of the photoelectron analyser, the effective FOM increased by a factor of ~4 × 104 compared to the case when only 1 channel of the 2D detector was used. We have applied spin-HAXPES to MgO(2 nm)/Fe(50 nm)/MgO(001) structures. The spin-HAXPES experiments revealed the majority and minority spin electronic states and the spin polarisation of the buried Fe thin film. Due to the large photoionization cross-section of the 4s orbital of Fe in HAXPES, the spin-resolved spectra mainly reflected the Fe 3d and 4s states. The observed spin-HAXPES and spin polarisation spectral shapes agreed well with the calculated spin-resolved cross-section weighted densities of states and spin polarisation spectra. In contrast, a small discrepancy in the energy scale was recognised due to the electron correlation effects. These results suggest that the electron correlation effects are important in the electronic structure of bulk Fe, and spin-HAXPES is useful for detecting genuine spin-resolved valence band electronic structures of buried magnetic materials.

The electric double layer effect and its strong suppression at Li+ solid electrolyte/hydrogenated diamond interfaces.

The electric double layer (EDL) effect at solid electrolyte/electrode interfaces has been a key topic in many energy and nanoelectronics applications (e.g., all-solid-state Li+ batteries and memristors). However, its characterization remains difficult in comparison with liquid electrolytes. Herein, we use a novel method to show that the EDL effect, and its suppression at solid electrolyte/electronic material interfaces, can be characterized on the basis of the electric conduction characteristics of hydrogenated diamond(H-diamond)-based EDL transistors (EDLTs). Whereas H-diamond-based EDLT with a Li-Si-Zr-O Li+ solid electrolyte showed EDL-induced hole density modulation over a range of up to three orders of magnitude, EDLT with a Li-La-Ti-O (LLTO) Li+ solid electrolyte showed negligible enhancement, which indicates strong suppression of the EDL effect. Such suppression is attributed to charge neutralization in the LLTO, which is due to variation in the valence state of the Ti ions present. The method described is useful for quantitatively evaluating the EDL effect in various solid electrolytes.

Intermetallic Pd3 X (X= Ti and Zr) nanocrystals for electro-oxidation of alcohols and formic acid in alkaline and acidic media.

Two highly active and stable Pd-based intermetallic nanocrystals with early d-metals Pd3Ti and Pd3Zr have been developed. The nanocrystals are synthesized by co-reduction of the respective salts of Pd and Ti/Zr. Hard X-ray photoemission Spectroscopy (HAXPES) analysis of the nanocrystals indicates that the electronic properties of Pd are modified significantly, as evident from the lowering of the d-band center of Pd. The intermetallic nanocrystals dispersed in Vulcan carbon, Pd3Ti/C and Pd3Zr/C, exhibit improved electrocatalytic activity towards methanol and ethanol oxidation in an alkaline medium (0.5 M KOH), compared to those of commercially available catalysts such as Pd/C, Pt/C, and Pt3Sn/C. In addition, Pd3Ti/C and Pd3Zr/C show significantly higher activity towards the oxidation of formic acid in an acidic medium (0.5 M H2SO4), compared to those of Pd/C and Pt/C. The modification of the d-band center of Pd as a result of the alloying of Pd with the early d-metals Ti and Zr may be responsible for the enhanced catalytic activity.

NaF/RbF-Treated Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers: Distinct Surface Modifications Caused by Two Different Types of Rubidium Chemistry.

The underlying beneficial mechanism of heavy alkali postdeposition treatment (PDT) of Cu(In,Ga)Se2 thin-film solar cell absorbers that led to new record efficiencies in recent years is studied using photoelectron spectroscopy. Excitation energies between 40.8 eV and 6 keV were used to examine the near-surface region of Cu(In,Ga)Se2 thin-film solar cell absorbers that underwent NaF and combined NaF/RbF PDT. The already Cu-deficient surface region after NaF PDT, which is modeled as a Cu:(In + Ga):Se = 1:5:8 phase, shows further depletion after NaF/RbF PDT and seems to incorporate some Rb. Additionally, we have found strong indications for the NaF/RbF PDT-induced formation of a Rb-In-Se-type compound with a 1:1:2 stoichiometry partially covering the absorber surface. The electronic Cu(In,Ga)Se2 structure is modified due to the RbF treatment, with a pronounced shift in the valence band maximum away from the Fermi level in the immediate vicinity of the surface.

On/Off Boundary of Photocatalytic Activity between Single- and Bilayer MoS2.

Molecularly thin two-dimensional (2D) semiconductors are emerging as photocatalysts owing to their layer-number-dependent quantum effects and high charge separation efficiency. However, the correlation among the dimensionality, crystallinity, and photocatalytic activity of such 2D nanomaterials remains unclear. Herein, a Ag photoreduction technique coupled with microscopic analyses is employed to spatially resolve the photocatalytic activity of MoS2 as a model catalyst. Interestingly, we find that only monolayer (1L)-MoS2 is active for a Ag photoreduction reaction. The photocatalytic activity of 1L-MoS2 is enhanced by a built-in electrical field originated from the MoS2/SiO2 interface, instead of by the specific surface structure and quantum electronic state of 1L-MoS2. Furthermore, we observe photocatalytic active sites to be geometrically distributed on triangular 1L-MoS2 crystals, wherein the Ag particles are preferentially deposited on the outermost zigzag edges and defective inner parts of the triangular grains. The degradation of photocatalytic activity and electron mobility with the formation of Mo(VI) species indicates that the species inhibit the in-plane diffusion of the photogenerated electrons to the reductive sites. The monolayer-selectivity, activation, and inactivation mechanisms, unveiled in this work, will offer future directions in designing 2D nanophotocatalysts.

Electronic structures of MgO/Fe interfaces with perpendicular magnetization revealed by hard X-ray photoemission with an applied magnetic field.

We have developed hard X-ray photoelectron spectroscopy (HAXPES) under an applied magnetic field of 1 kOe to study the electronic and magnetic states related to the MgO/Fe interface-induced perpendicular magnetic anisotropy (PMA). In this work, we used MgO (2 nm)/Fe (1.5 and 20 nm)/MgO(001) structures to reveal the interface-induced electronic states of the Fe film. Perpendicular magnetization of the 1.5-nm-thick Fe film without extrinsic oxidation of the Fe film was detected by the Fe 2p core-level magnetic circular dichroism (MCD) in HAXPES under a magnetic field, and easy magnetization axis perpendicular to the film plane was confirmed by ex situ magnetic hysteresis measurements. The valence-band HAXPES spectrum of the 1.5-nm-thick Fe film revealed that the Fe 3d electronic states were strongly modified from the thick Fe film and a reference bulk Fe sample due to the lifting of degeneracy in the Fe 3d states near the MgO/Fe interface. We found that the tetragonal distortion of the Fe film by the MgO substrate also contributes to the lifting of degeneracy in the Fe 3d states and PMA, as well as the Fe 3d-O 2p hybridization at the MgO/Fe interface, by comparing the valence-band spectrum with density functional theory calculations for MgO/Fe multilayer structures. Thus, we can conclude that the Fe 3d-O 2p hybridization and tetragonal distortion of the Fe film play important roles in PMA at the MgO/Fe interface. HAXPES with in situ magnetization thus represents a powerful new method for studying spintronic structures.

Topologically immobilized catalysis centre for long-term stable carbon dioxide reforming of methane.

Methane reforming at low temperatures is of growing importance to mitigate the environmental impact of the production of synthesis gas, but it suffers from short catalyst lifetimes due to the severe deposition of carbon byproducts. Herein, we introduce a new class of topology-tailored catalyst in which tens-of-nanometer-thick fibrous networks of Ni metal and oxygen-deficient Y2O3 are entangled with each other to form a rooted structure, i.e., Ni#Y2O3. We demonstrate that the rooted Ni#Y2O3 catalyst stably promotes the carbon-dioxide reforming of methane at 723 K for over 1000 h, where the performance of traditional supported catalysts such as Ni/Y2O3 diminishes within 100 h due to the precluded mass transport by accumulated carbon byproducts. In situ TEM demonstrates that the supported Ni nanoparticles are readily detached from the support surface in the reaction atmosphere, and migrate around to result in widespread accumulation of the carbon byproducts. The long-term stable methane reforming over the rooted catalyst is ultimately attributed to the topologically immobilized Ni catalysis centre and the synergistic function of the oxygen-deficient Y2O3 matrix, which successfully inhibits the accumulation of byproducts.

Catalysis-tunable Heusler alloys in selective hydrogenation of alkynes: A new potential for old materials.

Heusler alloys (X 2 YZ) are well-established intermetallic compound materials in various fields because their function can be precisely adjusted by elemental substitution (e.g., X 2 YZ 1-x Z' x ). Although intermetallic compound catalysts started attracting attention recently, catalysis researchers are not familiar with Heusler alloys. We report their potential as novel catalysts focusing on the selective hydrogenation of alkynes. We found that Co2MnGe and Co2FeGe alloys have great alkene selectivity. Mutual substitution of Mn and Fe (Co2Mn x Fe1-x Ge) enhanced the reaction rate without changing selectivity. The substitution of Ga for Ge decreased the selectivity but increased the reaction rate monotonically with Ga composition. Elucidation of these mechanisms revealed that the fine tuning of catalytic properties is possible in Heusler alloys by separately using ligand and ensemble effects of elemental substitution.

High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design.

Thin-film photovoltaics (PV) have emerged as a technology that can meet the growing demands for efficient and low-cost large-scale cells. However, the photoabsorbers currently in use contain expensive or toxic elements, and the difficulty in bipolar doping, particularly in a device structure, requires elaborate optimization of the heterostructures for improving the efficiency. This study shows that bipolar doping with high hole and electron mobilities in copper nitride (Cu3 N), composed solely of earth-abundant and environmentally benign elements, is readily available through a novel gaseous direct nitriding reaction applicable to uniform and large-area deposition. A high-quality undoped Cu3 N film is essentially an n-type semiconductor, while p-type conductivity is realized by interstitial fluorine doping, as predicted using density functional theory calculations and directly proven by atomically resolved imaging. The synthetic methodology for high-quality p-type and n-type films paves the way for the application of Cu3 N as an alternative absorber in thin-film PV.

A Cu-Zn nanoparticle promoter for selective carbon dioxide reduction and its application in visible-light-active Z-scheme systems using water as an electron donor.

Selective carbon dioxide photoreduction to produce formic acid was achieved under visible light irradiation using water molecules as electron donors, similar to natural plants, based on the construction of a Z-scheme light harvesting system modified with a Cu-Zn alloy nanoparticle co-catalyst. The faradaic efficiency of our Z-scheme system for HCOOH generation was over 50% under visible light irradiation.

Mn Self-Doping of Orthorhombic RMnO3 Perovskites: (R0.667Mn0.333)MnO3 with R = Er-Lu.

Orthorhombic rare-earth trivalent manganites RMnO3 (R = Er-Lu) were self-doped with Mn to form (R0.667Mn0.333)MnO3 compositions, which were synthesized by a high-pressure, high-temperature method at 6 GPa and about 1670 K from R2O3 and Mn2O3. The average oxidation state of Mn is 3+ in (R0.667Mn0.333)MnO3. However, Mn enters the A site in the oxidation state of 2+, creating the average oxidation state of 3.333+ at the B site. The presence of Mn2+ was confirmed by hard X-ray photoelectron spectroscopy measurements. Crystal structures were studied by synchrotron powder X-ray diffraction. (R0.667Mn0.333)MnO3 crystallizes in space group Pnma with a = 5.50348(2) Å, b = 7.37564(1) Å, and c = 5.18686(1) Å for (Lu0.667Mn0.333)MnO3 at 293 K, and they are isostructural with the parent RMnO3 manganites. Compared with RMnO3, (R0.667Mn0.333)MnO3 exhibits enhanced Néel temperatures of about TN1 = 106-110 K and ferrimagnetic or canted antiferromagnetic properties. Compounds with R = Er and Tm show additional magnetic transitions at about TN2 = 9-16 K. (Tm0.667Mn0.333)MnO3 exhibits a magnetization reversal or negative magnetization effect with a compensation temperature of about 16 K.