RESUMO
The antiferromagnetic Weyl semimetal Mn_{3}Sn has attracted wide attention due to its vast anomalous transverse transport properties despite barely any net magnetization. So far, the magnetic properties of Mn_{3}Sn have been experimentally investigated on micrometer scale samples but not in nanometers. In this study, we measured the local anomalous Nernst effect of a (0001)-textured Mn_{3}Sn nanowire using a tip-contact-induced temperature gradient with an atomic force microscope. Our approach directly maps the distribution of the cluster magnetic octupole moments with 80 nm spatial resolution, providing crucial information for integrating the Mn_{3}Sn nanostructure into spintronic devices.
RESUMO
Due to promising functionalities that may dramatically enhance spintronics performance, antiferromagnets are the subject of intensive research for developing the next-generation active elements to replace ferromagnets. In particular, the recent experimental demonstration of tunneling magnetoresistance and electrical switching using chiral antiferromagnets has sparked expectations for the practical integration of antiferromagnetic materials into device architectures. To further develop the technology to manipulate the magnetic anisotropies in all-antiferromagnetic devices, it is essential to realize exchange bias through the interface between antiferromagnetic multilayers. Here, the first observation on the omnidirectional exchange bias at an all-antiferromagnetic polycrystalline heterointerface is reported. This experiment demonstrates that the interfacial energy causing the exchange bias between the chiral-antiferromagnet Mn3Sn/collinear-antiferromagnet MnN layers is comparable to those found at the conventional ferromagnet/antiferromagnet interface at room temperature. In sharp contrast with previous reports using ferromagnets, the magnetic field control of the unidirectional anisotropy is found to be omnidirectional due to the absence of the shape anisotropy in the antiferromagnetic multilayer. The realization of the omnidirectional exchange bias at the interface between polycrystalline antiferromagnets on amorphous templates, highly compatible with existing Si-based devices, paves the way for developing ultra-low power and ultra-high speed memory devices based on antiferromagnets.
RESUMO
The anomalous Nernst effect (ANE) converts heat flux perpendicular to the plane into electricity, in sharp contrast with the Seebeck effect (SE), enabling mass production, large area, and flexibility of their devices through ordinary thin-film fabrication techniques. Heat flux sensors, one of the most promising applications of ANE, are powerful devices for evaluating heat flow and can lead to energy savings through efficient thermal management. In reality, however, SE caused by the in-plane heat flux is always superimposed on the measurement signal, making it difficult to evaluate the perpendicular heat flux. Here, ANE-type heat flux sensors that selectively detect a perpendicular heat flux are fabricated by adjusting the net Seebeck coefficient in their thermopile circuit with mass-producible roll-to-roll sputtering methods. The direct sensing of perpendicular heat flux using ANE-based flexible thermopiles, as well as their simple fabrication process, paves the way for the practical application of thin-film thermoelectric devices.