Large-Scale Direct Growth of Monolayer MoS2 on Patterned Graphene for van der Waals Ultrafast Photoactive Circuits.

Two-dimensional (2D) van der Waals heterostructures combine the distinct properties of individual 2D materials, resulting in metamaterials, ideal for emergent electronic, optoelectronic, and spintronic phenomena. A significant challenge in harnessing these properties for future hybrid circuits is their large-scale realization and integration into graphene interconnects. In this work, we demonstrate the direct growth of molybdenum disulfide (MoS2) crystals on patterned graphene channels. By enhancing control over vapor transport through a confined space chemical vapor deposition growth technique, we achieve the preferential deposition of monolayer MoS2 crystals on monolayer graphene. Atomic resolution scanning transmission electron microscopy reveals the high structural integrity of the heterostructures. Through in-depth spectroscopic characterization, we unveil charge transfer in Graphene/MoS2, with MoS2 introducing p-type doping to graphene, as confirmed by our electrical measurements. Photoconductivity characterization shows that photoactive regions can be locally created in graphene channels covered by MoS2 layers. Time-resolved ultrafast transient absorption (TA) spectroscopy reveals accelerated charge decay kinetics in Graphene/MoS2 heterostructures compared to standalone MoS2 and upconversion for below band gap excitation conditions. Our proof-of-concept results pave the way for the direct growth of van der Waals heterostructure circuits with significant implications for ultrafast photoactive nanoelectronics and optospintronic applications.

Synthesis of Sulfide Perovskites by Sulfurization with Boron Sulfides.

Chalcogenide perovskites (CPs), with the general composition ABX3, where A and B are metals and X = S and Se, have recently emerged as promising materials for application in photovoltaics. However, the development of CPs and their applications has been hindered by the limitations of available preparation methods. Here we present a new approach for the synthesis of CPs, based on the sulfurization of ternary and binary oxides or carbonates with in situ formed boron sulfides. In contrast to the previously described approaches, the method presented here uses chemically stable starting materials and yields pure-phase crystalline CPs within several hours, under low hazard conditions. CP yields over 95% are obtained at temperatures as low as 600 °C. The generality of the approach is demonstrated by the preparation of CPs with compositions BaZrS3, ß-SrZrS3, BaHfS3, SrHfS3, and EuHfS3. Mechanistic insights about the formation of CPs are discussed.

Microstructure, Mechanical and Tribological Properties of Advanced Layered WN/MeN (Me = Zr, Cr, Mo, Nb) Nanocomposite Coatings.

Due to the increased demands for drilling and cutting tools working at extreme machining conditions, protective coatings are extensively utilized to prolong the tool life and eliminate the need for lubricants. The present work reports on the effect of a second MeN (Me = Zr, Cr, Mo, Nb) layer in WN-based nanocomposite multilayers on microstructure, phase composition, and mechanical and tribological properties. The WN/MoN multilayers have not been studied yet, and cathodic-arc physical vapor deposition (CA-PVD) has been used to fabricate studied coating systems for the first time. Moreover, first-principles calculations were performed to gain more insight into the properties of deposited multilayers. Two types of coating microstructure with different kinds of lattices were observed: (i) face-centered cubic (fcc) on fcc-W2N (WN/CrN and WN/ZrN) and (ii) a combination of hexagonal and fcc on fcc-W2N (WN/MoN and WN/NbN). Among the four studied systems, the WN/NbN had superior properties: the lowest specific wear rate (1.7 × 10-6 mm3/Nm) and high hardness (36 GPa) and plasticity index H/E (0.93). Low surface roughness, high elastic strain to failure, Nb2O5 and WO3 tribofilms forming during sliding, ductile behavior of NbN, and nanocomposite structure contributed to high tribological performance. The results indicated the suitability of WN/NbN as a protective coating operating in challenging conditions.

Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films.

Lithiated thin films are necessary for the fabrication of novel solid-state batteries, including the electrodes and solid electrolytes. Physical vapour deposition and chemical vapour deposition can be used to deposit lithiated films. However, the issue of conformality on non-planar substrates with large surface area makes them impractical for nanobatteries the capacity of which scales with surface area. Atomic layer deposition (ALD) avoids these issues and is able to deposit conformal films on 3D substrates. However, ALD is limited in the range of chemical reactions, due to the required volatility of the precursors. Moreover, relatively high temperatures are necessary (above 100 °C), which can be detrimental to electrode layers and substrates, for example to silicon into which the lithium can easily diffuse. In addition, several highly reactive precursors, such as Grignard reagents or n-butyllithium (BuLi) are only usable in solution. In theory, it is possible to use BuLi and water in solution to produce thin films of LiH. This theoretical reaction is self-saturating and, therefore, follows the principles of solution atomic layer deposition (sALD). Therefore, in this work the sALD technique and principles have been employed to experimentally prove the possibility of LiH deposition. The formation of homogeneous air-sensitive thin films, characterized by using ellipsometry, grazing incidence X-ray diffraction (GIXRD), in situ quartz crystal microbalance, and scanning electron microscopy, was observed. Lithium hydride diffraction peaks have been observed in as-deposited films by GIXRD. X-ray photoelectron spectroscopy and Auger spectroscopy analysis show the chemical identity of the decomposing air-sensitive films. Despite the air sensitivity of BuLi and LiH, making many standard measurements difficult, this work establishes the use of sALD to deposit LiH, a material inaccessible to conventional ALD, from precursors and at temperatures not suitable for conventional ALD.

Oxidation-Induced Structure Transformation: Thin-Film Synthesis and Interface Investigations of Barium Disilicide toward Potential Photovoltaic Applications.

Barium disilicide (BaSi2) has been regarded as a promising absorber material for high-efficiency thin-film solar cells. However, it has confronted issues related to material synthesis and quality control. Here, we fabricate BaSi2 thin films via an industrially applicable sputtering process and uncovered the mechanism of structure transformation. Polycrystalline BaSi2 thin films are obtained through the sputtering process followed by a postannealing treatment. The crystalline quality and phase composition of sputtered BaSi2 are characterized by Raman spectroscopy and X-ray diffraction (XRD). A higher annealing temperature can promote crystallization of BaSi2, but also causes an intensive surface oxidation and BaSi2/SiO2 interfacial diffusion. As a consequence, an inhomogeneous and layered structure of BaSi2 is revealed by Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). The thick oxide layer in such an inhomogeneous structure hinders further both optical and electrical characterizations of sputtered BaSi2. The structural transformation process of sputtered BaSi2 films then is studied by the Raman depth-profiling method, and all of the above observations come to an oxidation-induced structure transformation mechanism. It interprets interfacial phenomena including surface oxidation and BaSi2/SiO2 interdiffusion, which lead to the inhomogeneous and layered structure of sputtered BaSi2. The mechanism can also be extended to epitaxial and evaporated BaSi2 films. In addition, a glimpse toward future developments in both material and device levels is presented. Such fundamental knowledge on structural transformations and complex interfacial activities is significant for further quality control and interface engineering on BaSi2 films toward high-efficiency solar cells.