Critical Role of Configurational Disorder in Stabilizing Chemically Unfavorable Coordination in Complex Compounds.

The crystal structure of a material is essentially determined by the nature of its chemical bonding. Consequently, the atomic coordination intimately correlates with the degree of ionicity or covalency of the material. Based on this principle, materials with similar chemical compositions can be successfully categorized into different coordination groups. However, counterexamples have recently emerged in complex ternary compounds. For instance, covalent IB-IIIA-VIA2 compounds, such as AgInS2, prefer a tetrahedrally coordinated structure (TCS), while ionic IA-VA-VIA2 compounds, such as NaBiS2, would favor an octahedrally coordinated structure (OCS). One naturally expects that IB-VA-VIA2 compounds with intermediate ionicity or covalency, such as AgBiS2, should then have a mix-coordinated structure (MCS) consisting of covalent AgS4 tetrahedra and ionic BiS6 octahedra. Surprisingly, only the experimental presence of the OCS was observed for AgBiS2. To resolve this puzzle, we perform first-principles studies of the phase stabilities of ternary compounds at finite temperatures. We find that AgBiS2 indeed prefers MCS at the ground state, in agreement with the typical expectation, but under experimental synthesis conditions, disordered OCS becomes energetically more favorable because of its low mixing energy and high configurational entropy. Our work elucidates the critical role of configurational disorder in stabilizing chemically unfavorable coordination, providing a rigorous rationale for the anomalous coordination preference in IB-VA-VIA2 compounds.

Computational Screening of Promising Deep-Ultraviolet Light Emitters.

Deep-ultraviolet (DUV) light sources are technologically highly important, but DUV light-emitting materials are extremely rare; AlN and its alloys are the only materials known so far, significantly limiting the chemical and structural spaces for materials design. Here, we perform a high-throughput computational search for DUV light emitters based on a set of carefully designed screening criteria relating to the sophisticated electronic structure. In this way, we successfully identify 5 promising material candidates that exhibit comparable or higher radiative recombination coefficients than AlN, including BeGeN2, Mg3NF3, KCaBr3, KHS, and RbHS. Further, we unveil the unique features in the atomic and electronic structures of DUV light emitters and elucidate the fundamental genetic reasons why DUV light emitters are extremely rare. Our study not only guides the design and synthesis of efficient DUV light emitters but also establishes the genetic nature of ultrawide-band-gap semiconductors in general.

Crystal Facet Engineering on SrTiO3 Enhances Photocatalytic Overall Water Splitting.

Single-crystal semiconductor-based photocatalysts exposing unique crystallographic facets show promising applications in energy and environmental technologies; however, crystal facet engineering through solid-state synthesis for photocatalytic overall water splitting is still challenging. Herein, we develop a novel crystal facet engineering strategy through solid-state recrystallization to synthesize uniform SrTiO3 single crystals exposing tailored {111} facets. The presynthesized low-crystalline SrTiO3 precursors enable the formation of well-defined single crystals through kinetically improved crystal structure transformation during solid-state recrystallization process. By employing subtle Al3+ ions as surface morphology modulators, the crystal surface orientation can be precisely tuned to a controlled percentage of {111} facets. The photocatalytic overall water splitting activity increases with the exposure percentage of {111} facets. Owing to the outstanding crystallinity and favorable anisotropic surface structure, the SrTiO3 single crystals with 36.6% of {111} facets lead to a 3-fold enhancement of photocatalytic hydrogen evolution rates up to 1.55 mmol·h-1 in a stoichiometric ratio of 2:1 than thermodynamically stable SrTiO3 enclosed with isotropic {100} facets.

Origin of the Nonmonotonic Pressure Dependence of the Band Gap in the Orthorhombic Perovskite CsPbBr3.

The perovskite CsPbBr3 exhibits an unusual nonmonotonic dependence of the band gap on increasing pressure to about 2.0 GPa as compared to conventional semiconductors. Using the first-principles calculation method, we show that under pressure, isotropic volume deformation induces considerable compression of the Pb-Br bond length and thus an enhanced interaction between atomic orbitals of the antibonding valence band maximum states and the mostly nonbonding conduction band minimum states, resulting in a monotonic decrease in the band gap. On the other hand, structural relaxation tends to reduce the strain energy by decompressing the Pb-Br bond length and simultaneously compressing the Pb-Br-Pb bond angle, which increases the band gap energy. We find that the competition between the volume deformation effect and structural relaxation effect is the origin of the nonmonotonic behavior of the dependence of the band gap on pressure.

Interface-confined intermediate phase in TiO2 enables efficient photocatalysis.

As a prototypical photocatalyst, TiO[Formula: see text] has been extensively studied. An interesting yet puzzling experimental fact was that P25-a mixture of anatase and rutile TiO[Formula: see text]-outperforms the individual phases; the origin of this mysterious fact, however, remains elusive. Employing rigorous first-principles calculations, here we uncover a metastable intermediate structure (MIS), which is formed due to confinement at the anatase/rutile interface. The MIS has a high conduction-band minimum level and thus substantially enhances the overpotential of the hydrogen evolution reaction. Also, the corresponding band alignment at the interface leads to efficient separation of electrons and holes. The interfacial confinement additionally creates a wide distribution of the band gap in the vicinity of the interface, which in turn improves optical absorption. These factors all contribute to the enhanced photocatalytic efficiency in P25. Our insights provide a rationale to the puzzling superior photocatalytic performance of P25 and enable a strategy to achieve highly efficient photocatalysis via interface engineering.

Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO2.

The conventional single-defect-mediated Shockley-Read-Hall model suggests that the nonradiative carrier recombination rate in wide-band gap (WBG) semiconductors would be negligible because the single-defect level is expected to be either far from valence-band-maximum (VBM) or conduction-band-minimum (CBM), or both. However, this model falls short of elucidating the substantial nonradiative recombination phenomena often observed experimentally across various WBG semiconductors. Owing to more localized nature of defect states inherent to WBG semiconductors, when the defect charge state changes, there is a pronounced structural relaxation around the local defect site. This suggests that a defect at each charge state may exhibit a few distinct local configurations, namely, a stable configuration and a few metastable/transit state configurations. Consequently, a dual-level nonradiative recombination model should more realistically exist in WBG semiconductors. In this model, through the dual-level mechanism, electron and hole trap levels are different from each other and could be closer to the CBM for the electron trap and closer to the VBM for the hole trap, respectively; therefore, this significantly increases the corresponding electron and hole capture rates, enhancing the overall process of nonradiative recombination, and explains the experimental observations. In this work, taking technically important SiO2 as an illustrative example, we introduce the dual-level mechanism to elucidate the mechanism of nonradiative carrier recombination in WBG semiconductors. Our findings demonstrated strong alignment with available experimental data, reinforcing the robustness of our proposed dual-level model. Our fundamental understanding, therefore, provides a clear physical picture of the issue and can also be applied to predict the defect-related nonradiative carrier recombination characteristics in other WBG materials.

Engineering Carrier Dynamics in Halide Perovskites by Dynamical Lattice Distortion.

The electronic structure of halide perovskites is central to their carrier dynamics, enabling the excellent optoelectronic performance. However, the experimentally resolved transient absorption spectra exhibit large discrepancies from the commonly computed electronic structure by density functional theory. Using pseudocubic CsPbI3 as a prototype example, here, it is unveiled with both ab initio molecular dynamics simulations and transmission electron microscopy that there exists pronounced dynamical lattice distortion in the form of disordered instantaneous octahedral tilting. Rigorous first-principles calculations reveal that the lattice distortion substantially alters the electronic band structure through renormalizing the band dispersions and the interband transition energies. Most notably, the electron and hole effective masses increase by 65% and 88%, respectively; the transition energy between the two highest valence bands decreases by about one half, agreeing remarkably well with supercontinuum transient-absorption measurements. This study further demonstrates how the resulting electronic structure modulates various aspects of the carrier dynamics such as carrier transport, hot-carrier relaxation, Auger recombination, and carrier multiplication in halide perovskites. The insights provide a pathway to engineer carrier transport and relaxation via lattice distortion, enabling the promise to achieve ultrahigh-efficiency photovoltaic devices.

Crystal-liquid duality enhanced dynamical stability of hybrid perovskites.

The organic molecules in hybrid perovskites can easily rotate within the inorganic lattice at room temperature, leading to a crystal-liquid duality. The liquid-like behavior of the organic molecules is commonly believed to play a critical role in the dynamical stability, but the microscopic mechanism remains unclear. Furthermore, the presence of dynamically rotating molecules raises concerns regarding the reliability of assessing the stability of hybrid perovskites based on simple yet commonly used descriptors such as the Goldschmidt tolerance factor. Here we assess the finite-temperature phonons of hybrid perovskites by mapping ab initio molecular dynamics configurations onto an equivalent dynamical pseudo-inorganic lattice and extracting the effective force constants. We find that as compared to the formamidinium or cesium cations, stronger anisotropy and wider range of the thermal motion of the methylammonium molecule are essential for enhancing the dynamical stability of hybrid perovskites. The cation radius that determines the tolerance factor is, in fact, less important. This work not only enables a pathway to further improve the stability of hybrid perovskites, but also provides a general scheme to assess the stability of hybrid materials with dynamical disorder.

Nonlinear optical phonon spectroscopy revealing polaronic signatures of the LaAlO3/SrTiO3 interface.

We report the direct observation of lattice phonons confined at LaAlO3/SrTiO3 (LAO/STO) interfaces and STO surfaces using the sum-frequency phonon spectroscopy. This interface-specific nonlinear optical technique unveiled phonon modes localized within a few monolayers at the interface, with inherent sensitivity to the coupling between lattice and charge degrees of freedom. Spectral evolution across the insulator-to-metal transition at LAO/STO interface revealed an electronic reconstruction at the subcritical LAO thickness, as well as strong polaronic signatures upon formation of the two-dimensional electron gas. We further discovered a characteristic lattice mode from interfacial oxygen vacancies, enabling us to probe such important structural defects in situ. Our study provides a unique perspective on many-body interactions at the correlated oxide interfaces.

Direct Observation of Group-V Dopant Substitutional Defects in CdTe Single Crystals.

Point defect chemistry strongly affects the fundamental properties of materials and has a decisive impact on device performance. The Group-V dopant is prominent acceptor species with high hole concentration in CdTe; however, its local atomic structure is still not clear owing to difficulties in definitive measurements and discrepancies between experimental observations and theoretical models. Herein, we report on direct observation of the local structure for the As dopant in CdTe single crystals by the X-ray fluorescence holography (XFH) technique, which is a powerful tool to visualize three-dimensional atomic configurations around a specific element. The XFH result shows the As substituting on both Cd (AsCd) and Te (AsTe) sites. Although AsTe has been well known as a shallow acceptor, AsCd has not attracted much attention and been discussed so far. Our results provide new insights into point defects by expanding the experimental XFH study in combination with theoretical first-principles studies in II-VI semiconductors.

Doping Limits of Phosphorus, Arsenic, and Antimony in CdTe.

Low p-type doping is a limiting factor to increase CdTe thin-film solar-cell efficiency toward the theoretical Shockley-Queisser limit of 33%. Previous calculations predict relatively high ionization energies for group-V acceptors (P, As, and Sb), and they are plagued by self-compensation, forming AX centers, severely limiting hole concentration. However, recent experiments on CdTe single crystals indicate a much more favorable scenario, where P, As, and Sb behave as shallow acceptors. Using hybrid functional calculations, we solve this puzzle by showing that the ionization energies significantly decrease with the supercell size. When including the effects of spin-orbit coupling and extrapolating the results to the dilute limit, we find these impurities behave as hydrogenic-like shallow acceptors, and AX centers are unstable and do not limit p-type doping. We address the differences between our results and previous theoretical predictions and show that our ionization energies predict hole concentrations that agree with recent temperature-dependent Hall measurements.

Enhanced Anharmonicity by Forming Low-Symmetry Off-Center Phase: The Case of Two-Dimensional Group-IB Chalcogenides.

Enhanced anharmonicity is required to achieve many interesting phenomena in thermoelectricity, superconductivity, ferroelectricity, etc. Here, we propose a novel mechanism for enhancing anharmonicity by forming the low-symmetry off-center ground state, such as the s(II) phase, in two-dimensional AIB2X chalcogenides (AIB = Cu, Ag and Au; X = S, Se, and Te). In this system, the in-plane rotational phonon mode introduces a much stronger anharmonicity in the distorted s(II) phase than in the nondistorted s(I) phase. We show that the stabilities of the s(I) and s(II) phases arise from the ionicity and the ionic size; for example, the low ionicity and the small ionic size favor the s(II) phase. We further demonstrate that the anharmonicity can be tuned by controlling the strain-induced s(II)-to-s(I) phase transition, which explains the anomalous lattice thermal conductivity. Our work relates anharmonicity to symmetry-breaking structural distortion and widens the ways to design excellent thermoelectric materials.

Defect modeling and control in structurally and compositionally complex materials.

Conventional computational approaches for modeling defects face difficulties when applied to complex materials, mainly due to the vast configurational space of defects. In this Perspective, we discuss the challenges in calculating defect properties in complex materials, review recent advances in computational techniques and showcase new mechanistic insights developed from these methods. We further discuss the remaining challenges in improving the accuracy and efficiency of defect modeling in complex materials, and provide an outlook on potential research directions.

Origin of Structural Anomaly in Cuprous Halides.

Cuprous halides (CuX; X = Cl, Br, or I) have been extensively investigated in the literature, but many of their fundamental properties are still not very well understood. For example, debate about their crystal stability, i.e., whether the ground-state structures of CuX are zinc-blende, still exists. By performing rigorous first-principles calculations for CuX using an accurate hybrid functional, we unambiguously demonstrate that CuX are indeed stable in the zinc-blende structure, but their accurate description requires careful treatment of the exchange interaction. Previous calculations based on local or semilocal density functionals underestimated the important contributions from exchange interactions and thus underestimated the energy separation between the unoccupied 4s and occupied 3d orbitals in Cu, resulting in an overestimation of the s-d coupling and the energy reduction of distorted CuX. Our study clarifies a long-standing and highly debated issue with regard to ground-state structures of CuX and advances the physics of phase stability and the importance of s-d coupling in semiconductors.

In2Se3, In2Te3, and In2(Se,Te)3 Alloys as Photovoltaic Materials.

In its lowest-energy three-dimensional (3D) hexagonal crystal structure (γ phase), In2Se3 has a direct band gap of ∼1.8 eV and displays high absorption coefficient, making it a promising semiconductor material for optoelectronics. Incorporation of Te allows for tuning the band gap, adding flexibility to device design and extending the application range. Here we report results of hybrid density functional theory calculations to assess the electronic and optical properties of γ-In2Se3, γ-In2Te3, and γ-In2(Se1-xTex)3 alloys, and initial experiments on the growth and characterization of γ-In2Se3 thin films. The predicted band gap of 1.84 eV for γ-In2Se3 is in good agreement with the absorption onset derived from transmission and reflection spectra of thin films. We show that incorporation of Te gives γ-In2(Se1-xTex)3 alloys with a band gap ranging from 1.84 eV down to 1.23 eV, thus covering the optimal band gap range for single-junction solar cells. In addition, the γ-In2Se3/γ-In2(Se1-xTex)3 bilayer could be employed in tandem solar-cell architectures absorbing at Eg ≈ 1.8 eV and at Eg ≤ 1.4 eV, toward overcoming the ∼33% efficiency set by the Shockley-Queisser limit for single junction solar cells. We also discuss band gap bowing and mixing enthalpies, aiming at adding γ-In2Se3, γ-In2Te3, and γ-In2(Se1-xTex)3 alloys to the available toolbox of materials for solar cells and other optoelectronic applications.

Hydrogenated Cs2AgBiBr6 for significantly improved efficiency of lead-free inorganic double perovskite solar cell.

Development of lead-free inorganic perovskite material, such as Cs2AgBiBr6, is of great importance to solve the toxicity and stability issues of traditional lead halide perovskite solar cells. However, due to a wide bandgap of Cs2AgBiBr6 film, its light absorption ability is largely limited and the photoelectronic conversion efficiency is normally lower than 4.23%. In this text, by using a hydrogenation method, the bandgap of Cs2AgBiBr6 films could be tunable from 2.18 eV to 1.64 eV. At the same time, the highest photoelectric conversion efficiency of hydrogenated Cs2AgBiBr6 perovskite solar cell has been improved up to 6.37% with good environmental stability. Further investigations confirmed that the interstitial doping of atomic hydrogen in Cs2AgBiBr6 lattice could not only adjust its valence and conduction band energy levels, but also optimize the carrier mobility and carrier lifetime. All these works provide an insightful strategy to fabricate high performance lead-free inorganic perovskite solar cells.

Origin of Efficiency Enhancement by Lattice Expansion in Hybrid-Perovskite Solar Cells.

It has been experimentally observed that light-induced lattice expansion could enhance the solar conversion efficiency in hybrid perovskites, but the origin remains elusive. By performing rigorous first-principles calculations for a prototypical hybrid-perovskite FAPbI_{3} (FA: formamidinium), we show that 1% lattice expansion could already reduce the nonradiative capture coefficient by one order of magnitude. Unexpectedly, the suppressed nonradiative capture is not caused by changes in the band gap or defect transition level due to lattice expansion, but originates from enhanced defect relaxations associated with charge-state transitions in the expanded lattice. These insights not only provide a rationale for the efficiency enhancement by lattice expansion in hybrid perovskites, but also offer a general approach to the manipulation of nonradiative capture via strain engineering in a wide spectrum of optoelectronic materials.

Designing Ultra-flat Bands in Twisted Bilayer Materials at Large Twist Angles: Theory and Application to Two-Dimensional Indium Selenide.

Intertwisted bilayers of two-dimensional (2D) materials can host low-energy flat bands, which offer opportunity to investigate many intriguing physics associated with strong electron correlations. In the existing systems, ultra-flat bands only emerge at very small twist angles less than a few degrees, which poses a challenge for experimental studies and practical applications. Here, we propose a new design principle to achieve low-energy ultra-flat bands with increased twist angles. The key condition is to have a 2D semiconducting material with a large energy difference of band edges controlled by stacking. We show that the interlayer interaction leads to defect-like states under twisting, which forms a flat band in the semiconducting band gap with dispersion strongly suppressed by the large energy barriers in the moiré superlattice even for large twist angles. We explicitly demonstrate our idea in bilayer α-In2Se3 and bilayer InSe. For bilayer α-In2Se3, we show that a twist angle of ∼13.2° is sufficient to achieve the band flatness comparable to that of twist bilayer graphene at the magic angle ∼1.1°. In addition, the appearance of ultra-flat bands here is not sensitive to the twist angle as in bilayer graphene, and it can be further controlled by external gate fields. Our finding provides a new route to achieve ultra-flat bands other than reducing the twist angles and paves the way toward engineering such flat bands in a large family of 2D materials.

General Model for Defect Dynamics in Ionizing-Irradiated SiO2 -Si Structures.

Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2 -Si) structures at room temperature has been modeled by a uniform generation of E'γ centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from E'γ to Pb centers at the SiO2 /Si interface through reactions with hydrogen molecules (H2 ). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of E'γ centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between E'γ and Pb centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H2 and Pb centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.

Effective lifetime of non-equilibrium carriers in semiconductors from non-adiabatic molecular dynamics simulations.

The lifetimes of non-equilibrium charge carriers in semiconductors calculated using non-adiabatic molecular dynamics often differ from experimental results by orders of magnitude. By revisiting the definition of carrier lifetime, we report a systematic procedure for calculating the effective carrier lifetime in semiconductor crystals under realistic conditions. The consideration of all recombination mechanisms and the use of appropriate carrier and defect densities are crucial to bridging the gap between modeling and measurements. Our calculated effective carrier lifetime of CH3NH3PbI3 agrees with experiments, and is limited by band-to-band radiative recombination and Shockley-Read-Hall defect-assisted non-radiative recombination, whereas the band-to-band non-radiative recombination is found to be negligible. The procedure is further validated by application to the compound semiconductors CdTe and GaAs, and thus can be applied in carrier lifetime simulations in other material systems.