Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot.

Indium arsenide (InAs) quantum dots (QDs) grown by molecular beam epitaxy (EBM) on gallium arsenide (GaAs) substrates have exhibited quantized charge-trapping characteristics. An electric charge can be injected in a single QD by a gold-coated AFM nano-probe placed directly on it using a conductive-mode atomic force microscope (C-AFM). The results revealed separate current-voltage (I-V) curves during consecutive measurements, where the turn-on voltages measured at the subsequent voltage sweeps are incrementally lower than that at the initial sweep. We demonstrate that the charge state of the QD can change over a long enough time by measuring the I-V data on the same QD at different time intervals. Discrete energy states (here, five states) have been observed due to the quantized charge leakage from the QD into the surrounding materials. These quantum states with five energy levels have been verified using quantum theory analysis of the quantum-well with the help of a numerical simulation model, which depends on the QD dimensions. The size of the quantum-well in the model is in good agreement with the actual QD size, whose lateral dimension is confirmed using a scanning electron microscope. At the same time, the height is estimated from the atomic force microscope topography.

Dual-lasing channel quantum cascade laser based on scattering-assisted injection design: erratum.

We correct three typographical errors in our published paper [Opt. Express26, 9194 (2018)10.1364/OE.26.009194]. First, we correct the error in the Table 1. The injection coupling strength for the summarized device in the first raw is corrected to 1.5 meV. Second, we correct the listed reference 10 to "S. Kumar, C. W. I. Chan, Q. Hu, and J. L. Reno, "A 1.8-THz quantum cascade laser operating significantly above the temperature of ℏω/kB," Nat. Phys. 7(2), 166-171 (2011)." Third, we correct the typographical error in the quantum structure layer thickness description. The text description on quantum structure layer thickness is correct to 40.3/74.4/24.1/103.6/29.7/79.7/40.3/156.7, which is the correct number extracted from high-resolution X-ray diffraction (HRXRD) measurement and used in simulation through the manuscript. The corrections do not alter the figures and conclusions in manuscript.

Six-level hybrid extraction/injection scheme terahertz quantum cascade laser with suppressed thermally activated carrier leakage.

This work presents a six-level scheme terahertz (THz) quantum cascade laser (QCL) design in which the resonant-phonon (RP) and the scattering-assisted (SA) injection/extraction are combined within a single Al0.15Ga0.85As/GaAs based structure. By utilizing extra excited states for hybrid extraction/injection channels, this design minimizes the appearance of an intermediate negative differential resistance (NDR) before the lasing threshold. The final negative differential resistance is observed up to 260K and a high characteristic temperature of 259 K is measured. These observations imply very effective suppression of pre-threshold electrical instability and thermally activated leakage current. In addition, the impact of critical design parameters of this scheme is investigated.

Porosity Modulated High-Performance Piezoelectric Nanogenerator Based on Organic/Inorganic Nanomaterials for Self-Powered Structural Health Monitoring.

In the modern era, structural health monitoring (SHM) is critically important and indispensable in the aerospace industry as an effective measure to enhance the safety and consistency of aircraft structures by deploying a reliable sensor network. The deployment of built-in sensor networks enables uninterrupted structural integrity monitoring of an aircraft, providing crucial information on operation condition, deformation, and potential damage to the structure. Sustainable and durable piezoelectric nanogenerators (PENGs) with good flexibility, high performance, and superior reliability are promising candidates for powering wireless sensor networks, particularly for aerospace SHM applications. This research demonstrates a self-powered wireless sensing system based on a porous polyvinylidene fluoride (PVDF)-based PENG, which is prominently anticipated for developing auto-operated sensor networks. Our reported porous PVDF film is made from a flexible piezoelectric polymer (PVDF) and inorganic zinc oxide (ZnO) nanoparticles. The fabricated porous PVDF-based PENG demonstrates ∼11 times and ∼8 times enhancement of output current and voltage, respectively, compared to a pure PVDF-based PENG. The porous PVDF-based PENG can produce a peak-to-peak short-circuit current of 22 µA, a peak-to-peak open-circuit voltage of 84.5 V, a peak output power of 0.46 mW (P=Voc2×Isc2), and a peak output power density of 41.02 µW/cm2 (P/A). By harnessing energy from minute vibrations, the fabricated porous PVDF-based PENG device (area of A = 11.33 cm2) can generate sufficient electrical energy to power up a customized wireless sensing and communication unit and transfer sensor data every ∼4 min. The PENG can generate sufficient electrical energy from an automobile car vibration, which reflects the scenario of potential real-life SHM systems. We anticipate that this high-performance porous PVDF-based PENG can act as a reliable power source for the sensor networks in aircraft, which minimizes potential safety risks.

Dual-lasing channel quantum cascade laser based on scattering-assisted injection design.

A dual lasing channel Terahertz Quantum Cascade laser (THz QCL) based on GaAs/Al0.17Ga0.83As material system is demonstrated. The device shows the lowest reported threshold current density (550A/cm2 at 50K) of GaAs/AlxGa1-xAs material system based scattering-assisted (SA) structures and operates up to a maximum lasing temperature of 144K. Dual lasing channel operation is investigated theoretically and experimentally. The combination of low frequency emission, dual lasing channel operation, low lasing threshold current density and high temperature performance make such devices ideal candidates for low frequency applications, and initiates the design strategy for achieving high-temperature performance terahertz quantum cascade laser with wide frequency coverage at low frequency.