[Electrical and optical phase transition properties of nano vanadium dioxide thin films].

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 microm, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

Compact universal logic gates realized using quantization of current in nanodevices.

This paper proposes novel universal logic gates using the current quantization characteristics of nanodevices. In nanodevices like the electron waveguide (EW) and single-electron (SE) turnstile, the channel current is a staircase quantized function of its control voltage. We use this unique characteristic to compactly realize Boolean functions. First we present the concept of the periodic-threshold threshold logic gate (PTTG), and we build a compact PTTG using EW and SE turnstiles. We show that an arbitrary three-input Boolean function can be realized with a single PTTG, and an arbitrary four-input Boolean function can be realized by using two PTTGs. We then use one PTTG to build a universal programmable two-input logic gate which can be used to realize all two-input Boolean functions. We also build a programmable three-input logic gate by using one PTTG. Compared with linear threshold logic gates, with the PTTG one can build digital circuits more compactly. The proposed PTTGs are promising for future smart nanoscale digital system use.