RESUMO
Rising wide bandgap semiconductor gallium oxide (Ga2O3) displays huge potential in performing solar-blind photodetection, with constraint in narrow detection wavebands in nature, whereas bandgap modulation through the introduction of exotic atoms into Ga2O3 has an essential effect on the tunable performance of photodetectors and the detection waveband. Here, a novel method for the preparation of (InxGa1-x)2O3 alloy films is proposed, and the continuous tuning of the bandgap in the range of 3.70-4.99 eV is achieved by varying the In-doping content. Alloy-based metal-semiconductor-metal photodetectors were fabricated, achieving a peak responsivity between 254 and 295 nm, superior performance compared to Ga2O3 photodetectors, with a photo-to-dark current ratio as high as 106, and a better optical image-sensing capability. This study offers new insight for high-performance detection of full solar-blind waveband ultraviolet light.
RESUMO
In this work, a solar-blind UV metal-semiconductor Schottky photodiode array is constructed by using metalorganic chemical vapor deposition grown ε-Ga2O3 thin film, possessing high-performance and self-powered characteristics, toward dual-mode (self-powered and biased modes) binary light communication. For the array unit, the responsivity, specific detectivity, and external quantum efficiency are 30.8â A/W/6.3 × 10-2â A/W, 1.51 × 104%/30.9%, 1.28 × 1014/5.4 × 1012 Jones for biased (-10â V)/self-powered operation. The rise and decay time are 0.19 and 7.96â ms at biased modes, respectively, suggesting an ability to trace fast light signal. As an array, the deviation of photocurrent is only 4.3%, highlighting the importance of accurate information communication. Through certain definition of "1/0" binary digital information, the "NY" and "IC" characters are communicated to illustrate the self-powered and biased modes by right of ASCII codes, based on the prepared ε-Ga2O3 solar-blind UV Schottky photodiode array. This work made dual-mode binary deep-UV light communication come true and may well guide the development of UV optoelectronics.
RESUMO
As an ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has been extensively applied in solar-blind photodetectors (PDs) owing to the absorbance cut-off wavelength of shorter than 280 nm, and the optimized technologies of detection performance is seriously essential for its further usages. Herein, a feasible thermal reorder engineering method was performed through annealing Ga2O3films in vacuum, O2and oxygen plasma atmospheres, realizing to tune solar-blind photosensing performance of Ga2O3PDs. Thermal treatment, in fact a crystal reorder process, significantly suppressed the noise in Ga2O3-based PDs and enhanced the photo-sensitivity, with the dark current decreasing from 154.63 pA to 269 fA and photo-to-dark current ratio magically raising from 288 to 2.85 × 104. This achievement is dependent of energy-band modulation in Ga2O3semiconductor, that is certified by first-principles calculation. Additionally, annealing in oxygen atmospheres notably reduces the concentration of oxygen vacancies in the surface of films, thereby improving the performance of the PDs; the oxygen vacancy is extremely concerned in oxide semiconductors in the view of physics of surface defects. In all, this work could display a promising guidance for modulating the performance of PDs based on wide bandgap oxide semiconductor, especially for hot Ga2O3issue.
RESUMO
With the continuous advancement of deep-ultraviolet (DUV) communication and optoelectronic detection, research in this field has become a significant focal point in the scientific community. For more accurate information collection and transport, the photodetector array of many pixels is the key of the UV imaging and commnication systems, and its photoelectric performance seriously depends on semiconductor material and array layout. Gallium oxide (Ga2O3) is an emerging wide bandgap semicondutor material which has been widely used in DUV dectection. Therefore, this paper mainly focuses on Ga2O3semiconductor detector array which has gained widespread attention in the field of DUV technique, from the perspective of individual device to array and its optoelectonic integration, for reviewing and discussing the research progress in design, fabrication, and application of Ga2O3arrays in recent years. It includes the structure design and material selection of array units, units growth and array layout, response to solar blind light, the method of imaging and image recognition. Morever, the future development trend of the photodetector array has been analyzed and reflected, aiming to provide some useful suggestions for the optimizing array structure, improving patterned growth technology and material growth quality. As well as Ga2O3optoelectronic devices and their applications are discussed in view of device physics and photophysics in detector.
RESUMO
Solar-blind UV photodetectors have outstanding reliability and sensitivity in flame detection without interference from other signals and response quickly. Herein, we fabricated a solar-blind UV photodetector based on a La2O3/ε-Ga2O3 p-n heterojunction with a typical type-II band alignment. Benefiting from the photovoltaic effect formed by the space charge region across the junction interface, the photodetector exhibited a self-powered photocurrent of 1.4 nA at zero bias. Besides, this photodetector demonstrated excellent photo-to-dark current ratio of 2.68 × 104 under 254 nm UV light illumination and at a bias of 5 V, and a high specific detectivity of 2.31 × 1011 Jones and large responsivity of 1.67 mA/W were achieved. Importantly, the La2O3/ε-Ga2O3 heterojunction photodetector can rapidly respond to flames in milliseconds without any applied biases. Based on the performances described above, this novel La2O3/ε-Ga2O3 heterojunction is expected to be a candidate for future energy-efficient fire detection.