Directed Self-Assembly of Poly(2-vinylpyridine)-b-polystyrene-b-poly(2-vinylpyridine) Triblock Copolymer with Sub-15 nm Spacing Line Patterns Using a Nanoimprinted Photoresist Template.

Low molecular weight P2VP-b-PS-b-P2VP triblock copolymer (poly(2-vinlypyridine)-block-polystyrene-block-poly(2-vinylpyridine)] is doped with copper chloride and microphase separated into lamellar line patterns with ultrahigh area density. Salt-doped P2VP-b-PS-b-P2VP triblock copolymer is self-assembled on the top of the nanoimprinted photoresist template, and metallic nanowires with long-range ordering are prepared with platinum-salt infiltration and plasma etching.

Servo-integrated patterned media by hybrid directed self-assembly.

A hybrid directed self-assembly approach is developed to fabricate unprecedented servo-integrated bit-patterned media templates, by combining sphere-forming block copolymers with 5 teradot/in.(2) resolution capability, nanoimprint and optical lithography with overlay control. Nanoimprint generates prepatterns with different dimensions in the data field and servo field, respectively, and optical lithography controls the selective self-assembly process in either field. Two distinct directed self-assembly techniques, low-topography graphoepitaxy and high-topography graphoepitaxy, are elegantly integrated to create bit-patterned templates with flexible embedded servo information. Spinstand magnetic test at 1 teradot/in.(2) shows a low bit error rate of 10(-2.43), indicating fully functioning bit-patterned media and great potential of this approach for fabricating future ultra-high-density magnetic storage media.

Integration of nanoimprint lithography with block copolymer directed self-assembly for fabrication of a sub-20 nm template for bit-patterned media.

We propose a novel strategy to integrate the nanoimprint lithography (NIL) technique with directed self-assembly (DSA) of block copolymer (BCP) for providing a robust, high-yield, and low-defect-density path to sub-20 nm dense patterning. Through this new NIL-DSA method, UV nanoimprint resist is used as the DSA copolymer pre-pattern to expedite the DSA process. This method was successfully used to fabricate a 1.0 Td in(-2) servo-integrated nanoimprint template for bit-patterned media (BPM) application. The fabricated template was used for UV-cure NIL on a 2.5-inch disk. The imprint resist patterns were further transferred into the underlying CoCrPt magnetic layer through a carbon hard mask using ion beam etching. The successful integration of the NIL technique with the DSA process provides us with a new route to BPM nanofabrication, which includes the following three major advantages: (1) a simpler and faster way to implement DSA for high-density BPM patterning; (2) a novel method for fabricating a high-quality dot pattern template through an iterative imprint-DSA-template procedure; and (3) an uncomplicated integration scheme for implementing non-periodic servo features with BCP patterns, thus accelerating the transition of moving the DSA technique from laboratory research to the BPM manufacturing environment.

Solvent-assisted directed self-assembly of spherical microdomain block copolymers to high areal density arrays.

The fabrication process for 5 Tb/in(2) bit patterns using solvent-assisted directed self-assembly is investigated. The N-methyl-2-pyrrolidone solvent vapor-annealing method was used to achieve good long-range lateral ordering of low-molecular-weight polystyrene-block-polydimethylsiloxane with a lattice spacing of 11 nm on flat Si substrates, PS modified substrates and lithographically patterned substrates, respectively.

Fabrication of silicon oxide nanodots with an areal density beyond 1 teradots inch(-2).

The combination of solvent annealing, surface reconstruction, and a tone-reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano-dots on a surface. The obtained silicon oxide nano-dots feature an areal density of 1.3 teradots inch(-2) .

Aligned nanowires and nanodots by directed block copolymer assembly.

The directed self-assembly of block copolymers (BCPs) is a promising route to generate highly ordered arrays of sub-10 nm features. Ultradense arrays of a monolayer of spherical microdomains or cylindrical microdomains oriented parallel to the surface have been produced where the lateral ordering is guided by surface patterning and the lattice defined by the patterning can be commensurate or incommensurate with the natural period of the BCP. Commensurability between the two can be used to elegantly manipulate the lateral ordering and orientation of the BCP microdomains so as to form well-aligned arrays of 1D nanowires or 2D addressable nanodots. No modification of the substrate surface, aside from the patterning, was used, making the influence of lattice mismatch and pattern amplification on the size, shape and pitch of the BCP microdomains more transparent. A skew angle between incommensurate lattices, defining a stretching or compression of the BCP chains to compensate for the lattice mismatch, is presented.

Circular nanopatterns over large areas from the self-assembly of block copolymers guided by shallow trenches.

We report the fabrication of ultradense circular nanolines of block copolymer (BCP) microdomains over macroscopic areas. These lines were generated by the directed self-assembly (DSA) of BCPs on the topographically patterned substrates, where the trenches with circular shape are patterned on a flat substrate. The width of the trench and the distance between trenches are varied for commensurability issues, and difference BCPs are used to demonstrate the generality of this strategy. When a commensurability condition is satisfied, BCPs on the topographically patterned substrates undergo a DSA with solvent annealing, resulting in a flat film with an areal density amplification of the circular patterns over large areas. The methodology described here may provide an easy approach to high densities of circularly shaped nanopatterns for data storage device manufacturing.

Directed Block Copolymer Assembly versus Electron Beam Lithography for Bit-Patterned Media with Areal Density of 1 Terabit/inch(2) and Beyond.

The directed self-assembly of block copolymer (BCP) offers a new route to perfect nanolithographic patterning at sub-50 nm length scale with molecular scale precision. We have explored the feasibility of using the BCP approach versus the conventional electron beam (e-beam) lithography to create highly dense dot patterns for bit-patterned media (BPM) applications. Cylinder-forming poly(styrene-b-methyl methacrylate) (PS-b-PMMA) directly self-assembled on a chemically prepatterned substrate. The nearly perfect hexagonal arrays of perpendicularly oriented cylindrical pores at a density of approximately 1 Terabit per square inch (Tb/in.(2)) are achieved over an arbitrarily large area. Considerable gains in the BCP process are observed relative to the conventional e-beam lithography in terms of the dot size variation, the placement accuracy, the pattern uniformity, and the exposure latitude. The maximum dimensional latitude in the cylinder-forming BCP patterns and the maximum skew angle that the BCP can tolerate have been investigated for the first time. The dimensional latitude restricts the formation of more than one lattice configuration in certain ranges. More defects in BCP patterns are observed when using low molecular weight BCP materials or on non-hexagonal prepatterns due to the dimensional latitude restriction. Finally, the limitations and challenges in the BCP approach that are associated with BPM applications will be briefly discussed.

Graphoepitaxy of cylinder-forming block copolymers for use as templates to pattern magnetic metal dot arrays.

We report a method to fabricate high-quality patterned magnetic dot arrays using block copolymer lithography, metal deposition, and a dry lift-off technique. Long-range order of cylindrical domains oriented perpendicular to the substrate and in hexagonal arrays was induced in the block copolymer films by prepatterning the substrate with topographic features and chemically modifying the surface to exhibit neutral wetting behaviour towards the blocks of the copolymer. The uniformity of the domain size and row spacing of block copolymer templates created in this way was improved compared to those reported in previous studies that used graphoepitaxy of sphere-forming block copolymers. The pattern of block copolymer domains was transferred to a pattern of magnetic metal dots, demonstrating the potential of this technology for the fabrication of patterned magnetic recording media.