RESUMO
Ferroelectric (FE) materials, including BiFeO3 , P(VDF-TrFE), and CuInP2 S6 , are a type of dielectric material with a unique, spontaneous electric polarization that can be reversed by applying an external electric field. The combination of FE and low-dimensional materials produces synergies, sparking significant research interest in solar cells, photodetectors (PDs), nonvolatile memory, and so on. The fundamental aspects of FE materials, including the origin of FE polarization, extrinsic FE materials, and FE polarization quantification are first discussed. Next, the state-of-the-art of FE-based optoelectronic devices is focused. How FE materials affect the energy band of channel materials and how device structures influence PD performance are also summarized. Finally, the future directions of this rapidly growing field are discussed.
RESUMO
The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP2S6 (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 104 A/W and 7.17 × 1011 Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.