Soft Memristor at a Microbubble Interface.

Memristors show promising features for neuromorphic computing. Here we report a soft memristor based on the liquid-vapor surface of a microbubble. The thickness of the liquid film was modulated by electrostatic and interfacial forces, enabling resistance switches. We found a pinched current hysteresis at scanning periods between 1.6 and 51.2 s, while representing a resistor below 1.6 s and a diode-like behavior above 51.2 s. We approximate the thickening/thinning dynamics of liquid film by pressure-driven flow at the interface and derived the impacts of salt concentration and voltage amplitude on the memory effects. Our work opens a new approach to building nanofluidic memristors by a soft interface, which may be useful for new types of neuromorphic computing in the future.

Memristive Characteristics in an Asymmetrically Charged Nanochannel.

The emergent nanofluidic memristor provides a promising way of emulating neuromorphic functions in the brain. The conical-shaped nanopore showed promising features for a nanofluidic memristor, inspiring us to investigate the memory effects in asymmetrically charged nanochannels due to their high current rectification, which may result in good memory effects. Here, the memory effects of an asymmetrically charged nanofluidic channel were numerically simulated by Poisson-Nernst-Planck equations. Our results showed that the I-V curves represented a diode in low scanning frequency and then became a memristor and finally a resistor as frequency increased. We successfully replicated the learning behavior in our system with history-dependent ion redistribution in the nanochannel. Some critical factors were quantitatively analyzed for the memory effects including voltage amplitude, optimal frequency, and Dukhin number. Experimental characterizations were also carried out. Our findings are useful for the design of nanofluidic memristors by the principle of enrichment and depletion as well as the determination of the best memory settings.

Nanofluidic memristor based on the elastic deformation of nanopores with nanoparticle adsorption.

The memristor is the building block of neuromorphic computing. We report a new type of nanofluidic memristor based on the principle of elastic strain on polymer nanopores. With nanoparticles absorbed at the wall of a single conical polymer nanopore, we find a pinched hysteresis of the current within a scanning frequency range of 0.01-0.1 Hz, switching to a diode below 0.01 Hz and a resistor above 0.1 Hz. We attribute the current hysteresis to the elastic strain at the tip side of the nanopore, caused by electrical force on the particles adsorbed at the inner wall surface. Our simulation and analytical equations match well with experimental results, with a phase diagram for predicting the system transitions. We demonstrate the plasticity of our nanofluidic memristor to be similar to a biological synapse. Our findings pave a new way for ionic neuromorphic computing using nanofluidic memristors.