RESUMO
In this study, we propose a liquid-phase-deposited silver nanoparticle embedded ZnO (LPD-Ag NP/ZnO) thin film at room temperature to improve the light extraction efficiency (LEE) for InGaN/GaN light-emitting diodes (LEDs). The treatment solution for the deposition of the LPD-Ag/NP ZnO thin film comprised a ZnO-powder-saturated HCl and a silver nitrate (AgNO3) aqueous solution. The enhanced LEE of an InGaN/GaN LED with the LPD-Ag NP/ZnO window layer can be attributed to the surface texture and localized surface plasmon (LSP) coupling effect. The surface texture of the LPD-Ag/NP ZnO window layer relies on the AgNO3 concentration, which decides the root-mean-square (RMS) roughness of the thin film. The LSP resonance or extinction wavelength also depends on the concentration of AgNO3, which determines the Ag NP size and content of Ag atoms in the LPD-Ag NP/ZnO thin film. The AgNO3 concentration for the optimal LEE of an InGaN/GaN LED with an LPD-Ag NP/ZnO window layer occurs at 0.05 M, which demonstrates an increased light output intensity that is approximately 1.52 times that of a conventional InGaN/GaN LED under a 20-mA driving current.
RESUMO
In this study, we synthesized a periodic polystyrene nanosphere (PS NS) array using the dip-drop method with post-deposition etching to improve the light extraction efficiency (LEE) of InGaN/GaN light-emitting diodes (LEDs). The dip-drop method has advantages such as simple procedure, inexpensive equipment, room temperature deposition, and easy implementation in LEDs. The arrangement of PS NSs on an indium-tin-oxide (ITO)-coated glass substrate depends on the average dip-drop speed and the concentration of the PS NS suspension. The periodic PS NS array can modulate the in-plane wave vector of emission light from a semiconductor to free space and thus increase the escape probability. The calculated and experimental results indicated that the light output intensity of the InGaN/GaN LEDs can be improved by using the periodic PS NS array as a window layer; this array comprises PS NSs with a diameter of 100 nm separated with periods of 100 and 100 nm in the x and y directions. Because of the improved LEE, the InGaN/GaN LEDs with the optimal PS NS array window layers exhibited a 38% increase in light output intensity compared with the conventional InGaN/GaN LEDs under 20-mA driving current.
RESUMO
Cu2ZnSnS4 (CZTS) thin films were deposited on glass substrates by using spin-coating and an annealing process, which can improve the crystallinity and morphology of the thin films. The grain size, optical gap, and atomic contents of copper (Cu), zinc (Zn), tin (Sn), and sulfur (S) in a CZTS thin film absorber relate to the concentrations of aqueous precursor solutions containing copper chloride (CuCl2), zinc chloride (ZnCl2), tin chloride (SnCl2), and thiourea (SC(NH2)2), whereas the electrical properties of CZTS thin films depend on the annealing temperature and the atomic content ratios of Cu/(Zn + Sn) and Zn/Sn. All of the CZTS films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDXS), Raman spectroscopy, and Hall measurements. Furthermore, CZTS thin film was deposited on an n-type silicon substrate by using spin-coating to form an Mo/p-CZTS/n-Si/Al heterostructured solar cell. The p-CZTS/n-Si heterostructured solar cell showed a conversion efficiency of 1.13% with Voc = 520 mV, Jsc = 3.28 mA/cm², and fill-factor (FF) = 66%.
