Bond Wire Damage Detection Method on Discrete MOSFETs Based on Two-Port Network Measurement.

Bond wire damage is one of the most common failure modes of metal-oxide semiconductor field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper proposes a novel bond wire damage detection approach based on two-port network measurement by identifying the MOSFET source parasitic inductance (LS). Numerical calculation shows that the number of bond wire liftoffs will change the LS, which can be used as an effective bond wire damage precursor. Considering a power MOSFET as a two-port network, LS is accurately extracted from frequency domain impedance (Z-parameter) using a vector network analyzer under zero biasing conditions. Bond wire cutoff experiments are employed to validate the proposed approach for bond wire damage detection. The result shows that LS increases with the rising severity of bond wire faults, and even the slight fault shows a high sensitivity, which can be effectively used to quantify the number of bond wire liftoffs of discrete MOSFETs. Meanwhile, the source parasitic resistance (RS) extracted from the proposed two-port network measurement can be used for the bond wire damage detection of high switching frequency silicon carbide MOSFETs. This approach offers an effective quality screening technology for discrete MOSFETs without power on treatment.

Molecular Dynamics Simulation of Sintering Densification of Multi-Scale Silver Layer.

Based on molecular dynamics (MD), in this study, a model was established to simulate the initial coating morphology of silver paste by using a random algorithm, and the effects of different sizes of particles on sintering porosity were also analyzed. The MD result reveals that compared with the sintering process using large-scale silver particles, the sintering process using multi-scale silver particles would enhance the densification under the same sintering conditions, which authenticates the feasibility of adding small silver particles to large-scale silver particles in theory. In addition, to further verify the feasibility of the multi-scale sintering, a semi in-situ observation was prepared for a sintering experiment using micro-nano multi-scale silver paste. The feasibility of multi-scale silver sintering is proved by theoretical and experimental means, which can provide a meaningful reference for optimizing the sintering process and the preparation of silver paste for die-attach in powering electronics industry. In addition, it is hoped that better progress can be made on this basis in the future.

Improving Gas-Sensing Performance Based on MOS Nanomaterials: A Review.

In order to solve issues of air pollution, to monitor human health, and to promote agricultural production, gas sensors have been used widely. Metal oxide semiconductor (MOS) gas sensors have become an important area of research in the field of gas sensing due to their high sensitivity, quick response time, and short recovery time for NO2, CO2, acetone, etc. In our article, we mainly focus on the gas-sensing properties of MOS gas sensors and summarize the methods that are based on the interface effect of MOS materials and micro-nanostructures to improve their performance. These methods include noble metal modification, doping, and core-shell (C-S) nanostructure. Moreover, we also describe the mechanism of these methods to analyze the advantages and disadvantages of energy barrier modulation and electron transfer for gas adsorption. Finally, we put forward a variety of research ideas based on the above methods to improve the gas-sensing properties. Some perspectives for the development of MOS gas sensors are also discussed.

Ultra-compact electro-optic modulator based on alternative plasmonic material.

We propose an ultra-compact electro-optic microring modulator based on a hybrid plasmonic waveguide. In comparison to previously proposed structures, the present structure utilizes aluminum-doped zinc oxide (AZO), rather than noble metals, for plasmon excitation. AZO can be used to simultaneously tune both the real and imaginary parts of the dielectric constant by changing the carrier concentration. The modulation depth and insertion loss of the microring modulator are 18.70 and 2.76 dB. The proposed modulator has a high modulation speed because its capacitance is 0.22 fF. This device could be used in high-density integrated optical circuits.

Entropy Generation Methodology for Defect Analysis of Electronic and Mechanical Components-A Review.

Understanding the defect characterization of electronic and mechanical components is a crucial step in diagnosing component lifetime. Technologies for determining reliability, such as thermal modeling, cohesion modeling, statistical distribution, and entropy generation analysis, have been developed widely. Defect analysis based on the irreversibility entropy generation methodology is favorable for electronic and mechanical components because the second law of thermodynamics plays a unique role in the analysis of various damage assessment problems encountered in the engineering field. In recent years, numerical and theoretical studies involving entropy generation methodologies have been carried out to predict and diagnose the lifetime of electronic and mechanical components. This work aimed to review previous defect analysis studies that used entropy generation methodologies for electronic and mechanical components. The methodologies are classified into two categories, namely, damage analysis for electronic devices and defect diagnosis for mechanical components. Entropy generation formulations are also divided into two detailed derivations and are summarized and discussed by combining their applications. This work is expected to clarify the relationship among entropy generation methodologies, and benefit the research and development of reliable engineering components.

A Novel Microwave Treatment for Sleep Disorders and Classification of Sleep Stages Using Multi-Scale Entropy.

The aim of this study was to develop an integrated system of non-contact sleep stage detection and sleep disorder treatment for health monitoring. Hence, a method of brain activity detection based on microwave scattering technology instead of scalp electroencephalogram was developed to evaluate the sleep stage. First, microwaves at a specific frequency were used to penetrate the functional sites of the brain in patients with sleep disorders to change the firing frequency of the activated areas of the brain and analyze and evaluate statistically the effects on sleep improvement. Then, a wavelet packet algorithm was used to decompose the microwave transmission signal, the refined composite multiscale sample entropy, the refined composite multiscale fluctuation-based dispersion entropy and multivariate multiscale weighted permutation entropy were obtained as features from the wavelet packet coefficient. Finally, the mutual information-principal component analysis feature selection method was used to optimize the feature set and random forest was used to classify and evaluate the sleep stage. The results show that after four times of microwave modulation treatment, sleep efficiency improved continuously, the overall maintenance was above 80%, and the insomnia rate was reduced gradually. The overall classification accuracy of the four sleep stages was 86.4%. The results indicate that the microwaves with a certain frequency can treat sleep disorders and detect abnormal brain activity. Therefore, the microwave scattering method is of great significance in the development of a new brain disease treatment, diagnosis and clinical application system.

Evaluation survey of microbial disinfection methods in UV-LED water treatment systems.

Ultraviolet (UV) disinfection is an early discovered technology that is currently and widely used for water treatment and food hygiene treatment. A newly emerging technology of UV disinfection, that is, UV light-emitting diodes (UV-LEDs), has aroused considerable research attention. UV-LEDs feature numerous advantages compared with traditional UV mercury vapor lamps and are expected to replace traditional UV lamps. Researchers currently perform studies to obtain data and develop methods for UV-LED water treatment systems. This article analyzes the latest research status and discusses the types of inactivation factors, such as the wavelength selectivity of UV light source, control of UV dose, effect of inactivation rate constant (K) (cm2/mJ), working mode of water sample, external auxiliary system, and UV sensitivity of pathogenic bacteria in water. The wavelengths of approximately 260 and 280 nm normally feature strong inactivation characteristics. When compared with the approximately 260 nm wavelength chip, the around 280 nm wavelength chip proves to be a better choice as its higher wavelength light power can result in faster disinfection capacity of bacteria. UV dose can also be used as the reference value for disinfection of drinking water, whereas the inactivation rate constant (K) (cm2/mJ) varies with different microorganism internal structures. Changing the working mode or adding an auxiliary system can also enhance the inactivation effect in water treatment system settings. In addition, we can compare the inactivation capacities of several pathogens as follows: ΦX174 > Escherichia coli > T type bacteriophage >Bacillus subtilis > MS2 or Qß > human adenovirus. The in-depth investigation and discussion of inactivation factors and the mechanism of action in UV-LEDs water treatment systems will establish a more efficient UV-LED disinfection method in the future, provide a guiding direction, and promote the standardization and normalization of pathogen inactivation mechanism in UV-LED water treatment systems.

First-Principles Investigation of the Adsorption Behaviors of CH2O on BN, AlN, GaN, InN, BP, and P Monolayers.

CH2O is a common toxic gas molecule that can cause asthma and dermatitis in humans. In this study the adsorption behaviors of the CH2O adsorbed on the boron nitride (BN), aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), boron phosphide (BP), and phosphorus (P) monolayers were investigated using the first-principles method, and potential materials that could be used for detecting CH2O were identified. The gas adsorption energies, charge transfers and electronic properties of the gas adsorption systems have been calculated to study the gas adsorption behaviors of CH2O on these single-layer materials. The electronic characteristics of these materials, except for the BP monolayer, were observed to change after CH2O adsorption. For CH2O on the BN, GaN, BP, and P surfaces, the gas adsorption behaviors were considered to follow a physical trend, whereas CH2O was chemically adsorbed on the AlN and InN monolayers. Given their large gas adsorption energies and high charge transfers, the AlN, GaN, and InN monolayers are potential materials for CH2O detection using the charge transfer mechanism.

Effects of High-Temperature Storage on the Elasticity Modulus of an Epoxy Molding Compound.

Changes in the elasticity modulus of an epoxy molding compound (EMC), an electronic packaging polymer, under high-temperature air storage conditions, are discussed in this study. The elasticity modulus of EMC had two different compositions (different filling contents) under different temperatures (175, 200, and 225 °C) and aging times (100, 500, and 1500 h), which were analyzed by using dynamic mechanic analysis technology. The results revealed that the elasticity modulus increased in the thermal aging process, with an increase in the temperature and the aging time. The increments of the glassy and rubbery states were similar. However, the growing rate was significantly different, and the growth of the rubbery state was significantly higher than that of the glassy state. The filling content influenced the degree of aging of the materials significantly. At a low filling content, long-term aging under high temperatures completely changed the material structure, and the mechanical properties of the polymer were reduced.

Lithium Titanate Matrix-Supported Nanocrystalline Silicon Film as an Anode for Lithium-Ion Batteries.

A facile preparation method of a Si-based anode with excellent cycling property is urgently required in the process of preparing lithium-ion batteries (LIBs). Here, lithium titanate (LTO) matrix-supported nanocrystalline Si film is prepared by radio frequency (RF) magnetron cosputtering utilizing LTO and silicon (Si) targets as the sputtering source. LTO-supported nanocrystalline Si film electrodes revealed a repeatable specific capacity of 1200 mA h g-1 at 150 mA g-1 with a maintenance of more than 75% even after 800 cycles. The remarkable electrochemical properties of the LTO-Si composite films could be attributed to the LTO matrix, preventing the electrolyte from directly making contact with the nanocrystalline Si materials, alleviating the stress of the periodic volume change and further providing efficient and rapid pathways for lithium-ion transport. The results suggest that Si-based LTO composite films are prospective anodes for LIBs, with high capacities and long cycling stabilities.

First-principles investigation of adsorption behaviors of small molecules on penta-graphene.

The gas-adsorption behaviors of small molecules CO, H2O, H2S, NH3, SO2, and NO on pristine penta-graphene (PG) were investigated using first-principles calculations to explore their potential for use as advanced gas-sensing materials. Results show that, except for CO, H2O, H2S, NH3, and SO2 are physically adsorbed on the surface of penta-graphene with considerable adsorption energy and moderate charge transfer, while NO is prone to be chemically adsorbed on the surface of penta-graphene. Moreover, the electronic properties of PG can be effectively modified after H2O, H2S, NH3, SO2, and NO are adsorbed, and penta-graphene has potential for using in gas sensors via the charge-transfer mechanism.

The Effects of Graphene Stacking on the Performance of Methane Sensor: A First-Principles Study on the Adsorption, Band Gap and Doping of Graphene.

The effects of graphene stacking are investigated by comparing the results of methane adsorption energy, electronic performance, and the doping feasibility of five dopants (i.e., B, N, Al, Si, and P) via first-principles theory. Both zigzag and armchair graphenes are considered. It is found that the zigzag graphene with Bernal stacking has the largest adsorption energy on methane, while the armchair graphene with Order stacking is opposite. In addition, both the Order and Bernal stacked graphenes possess a positive linear relationship between adsorption energy and layer number. Furthermore, they always have larger adsorption energy in zigzag graphene. For electronic properties, the results show that the stacking effects on band gap are significant, but it does not cause big changes to band structure and density of states. In the comparison of distance, the average interlamellar spacing of the Order stacked graphene is the largest. Moreover, the adsorption effect is the result of the interactions between graphene and methane combined with the change of graphene's structure. Lastly, the armchair graphene with Order stacking possesses the lowest formation energy in these five dopants. It could be the best choice for doping to improve the methane adsorption.

A Theoretical Review on Interfacial Thermal Transport at the Nanoscale.

With the development of energy science and electronic technology, interfacial thermal transport has become a key issue for nanoelectronics, nanocomposites, energy transmission, and conservation, etc. The application of thermal interfacial materials and other physical methods can reliably improve the contact between joined surfaces and enhance interfacial thermal transport at the macroscale. With the growing importance of thermal management in micro/nanoscale devices, controlling and tuning the interfacial thermal resistance (ITR) at the nanoscale is an urgent task. This Review examines nanoscale interfacial thermal transport mainly from a theoretical perspective. Traditional theoretical models, multiscale models, and atomistic methodologies for predicting ITR are introduced. Based on the analysis and summary of the factors that influence ITR, new methods to control and reduce ITR at the nanoscale are described in detail. Furthermore, the challenges facing interfacial thermal management and the further progress required in this field are discussed.

Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals.

For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson's ratios of the two GaN polycrystals were calculated using Voigt and Hill approximations, and the results show wurtzite GaN has larger shear and elastic moduli and exhibits more obvious brittleness. Moreover, both wurtzite and zinc-blende GaN monocrystals present obvious mechanical anisotropic behavior. For wurtzite GaN monocrystal, the maximum and minimum elastic moduli are located at orientations [001] and <111>, respectively, while they are in the orientations <111> and <100> for zinc-blende GaN monocrystal, respectively. Compared to the elastic modulus, the shear moduli of the two GaN monocrystals have completely opposite direction dependences. However, different from elastic and shear moduli, the bulk moduli of the two monocrystals are nearly isotropic, especially for the zinc-blende GaN. Besides, in the wurtzite GaN, Poisson's ratios at the planes containing [001] axis are anisotropic, and the maximum value is 0.31 which is located at the directions vertical to [001] axis. For zinc-blende GaN, Poisson's ratios at planes (100) and (111) are isotropic, while the Poisson's ratio at plane (110) exhibits dramatically anisotropic phenomenon. Additionally, the calculated Debye temperatures of wurtzite and zinc-blende GaN are 641.8 and 620.2 K, respectively. At 300 K, the calculated heat capacities of wurtzite and zinc-blende are 33.6 and 33.5 J mol-1 K-1, respectively. Finally, the band gap is located at the G point for the two crystals, and the band gaps of wurtzite and zinc-blende GaN are 3.62 eV and 3.06 eV, respectively. At the G point, the lowest energy of conduction band in the wurtzite GaN is larger, resulting in a wider band gap. Densities of states in the orbital hybridization between Ga and N atoms of wurtzite GaN are much higher, indicating more electrons participate in forming Ga-N ionic bonds in the wurtzite GaN.

Design and adjustment of the graphene work function via size, modification, defects, and doping: a first-principle theory study.

In this work, the work function (WF) of graphenes, which are used as electronic devices, has been designed and evaluated by using the first-principle approach. Different states of graphene were considered, such as surface modification, doping, and defects. Firstly, WF strongly depends on the width of pristine graphene. A bigger width leads to a smaller WF. In addition, the effects of hydroxyls, defects, and positions of hydroxyls and defects are of concern. The WF of the graphene which is modified with hydroxyls is bigger than that of the pristine graphene. Moreover, the WF value increases with the number of hydroxyls. Positions of the hydroxyls and defects that deviated from the center have limited influence on the WF, whereas the effect of the position in the center is substantial. Lastly, B, N, Al, Si, and P are chosen as the doping elements. The n-type graphene doped with N and P atoms results in a huge decline in the WF, whereas the p-type graphene doped with B and Al atoms causes a great increase in the WF. However, the doping of Al in graphene is difficult, whereas the doping of B and N is easier. These discoveries will provide heavy support for the production of graphene-based devices.

A First-Principle Theoretical Study of Mechanical and Electronic Properties in Graphene Single-Walled Carbon Nanotube Junctions.

The new three-dimensional structure that the graphene connected with SWCNTs (G-CNTs, Graphene Single-Walled Carbon Nanotubes) can solve graphene and CNTs' problems. A comprehensive study of the mechanical and electrical performance of the junctions was performed by first-principles theory. There were eight types of junctions that were constituted by armchair and zigzag graphene and (3,3), (4,0), (4,4), and (6,0) CNTs. First, the junction strength was investigated. Generally, the binding energy of armchair G-CNTs was stronger than that of zigzag G-CNTs, and it was the biggest in the armchair G-CNTs (6,0). Likewise, the electrical performance of armchair G-CNTs was better than that of zigzag G-CNTs. Charge density distribution of G-CNTs (6,0) was the most homogeneous. Next, the impact factors of the electronic properties of armchair G-CNTs were investigated. We suggest that the band gap is increased with the length of CNTs, and its value should be dependent on the combined effect of both the graphene's width and the CNTs' length. Last, the relationship between voltage and current (U/I) were studied. The U/I curve of armchair G-CNTs (6,0) possessed a good linearity and symmetry. These discoveries will contribute to the design and production of G-CNT-based devices.

Tuning the electronic properties and work functions of graphane/fully hydrogenated h-BN heterobilayers via heteronuclear dihydrogen bonding and electric field control.

Using density functional theory calculations with van der Waals correction, we show that the electronic properties (band gap and carrier mobility) and work functions of graphane/fully hydrogenated hexagonal boron nitride (G/fHBN) heterobilayers can be favorably tuned via heteronuclear dihydrogen bonding (C-HH-B and C-HH-N) and an external electric field. Our results reveal that G/fHBN heterobilayers have different direct band gaps of ∼1.2 eV and ∼3.5 eV for C-HH-B and C-HH-N bonds, respectively. In particular, these band gaps can be effectively modulated by altering the direction and strength of the external electric field (E-field), and correspondingly exhibit a semiconductor-metal transition. The conformation and stability of G/fHBN heterobilayers show a strong dependence on the heteronuclear dihydrogen bonding. Fantastically, these bonds are stable enough under a considerable external E-field as compared with other van der Waals (vdW) 2D layered materials. The mobilities of G/fHBN heterobilayers we predicted are hole-dominated, reasonably high (improvable up to 200 cm(2) V(-1) s(-1)), and extremely isotropic. We also demonstrate that the work function of G/fHBN heterobilayers is very sensitive to the external E-field and is extremely low. These findings make G/fHBN heterobilayers very promising materials for field-effect transistors and light-emitting devices, and inspire more efforts in the development of 2D material systems using weak interlayer interactions and electric field control.

A novel technique for micro-hole forming on skull with the assistance of ultrasonic vibration.

Micro-hole opening on skull is technically challenging and is hard to realize by micro-drilling. Low-stiffness of the drill bit is a serious drawback in micro-drilling. To deal with this problem, a novel ultrasonic vibration assisted micro-hole forming technique has been developed. Tip geometry and vibration amplitude are two key factors affecting the performance of this hole forming technique. To investigate their effects, experiment was carried out with 300µm diameter tools of three different tip geometries at three different vibration amplitudes. Hole forming performance was evaluated by the required thrust force, dimensional accuracy, exit burr and micro-structure of bone tissue around the generated hole. Based on the findings from current study, the 60° conically tipped tool helps generate a micro-hole of better quality at a smaller thrust force, and it is more suitable for hole forming than the 120° conically tipped tool and the blunt tipped tool. As for the vibration amplitude, when a larger amplitude is used, a micro-hole of better quality and higher dimensional accuracy can be formed at a smaller thrust force. Findings from this study would lay a technical foundation for accurately generating a high-quality micro-hole on skull, which enables minimally invasive insertion of a microelectrode into brain for neural activity measuring.

Degradation modeling of mid-power white-light LEDs by using Wiener process.

The IES standard TM-21-11 provides a guideline for lifetime prediction of LED devices. As it uses average normalized lumen maintenance data and performs non-linear regression for lifetime modeling, it cannot capture dynamic and random variation of the degradation process of LED devices. In addition, this method cannot capture the failure distribution, although it is much more relevant in reliability analysis. Furthermore, the TM-21-11 only considers lumen maintenance for lifetime prediction. Color shift, as another important performance characteristic of LED devices, may also render significant degradation during service life, even though the lumen maintenance has not reached the critical threshold. In this study, a modified Wiener process has been employed for the modeling of the degradation of LED devices. By using this method, dynamic and random variations, as well as the non-linear degradation behavior of LED devices, can be easily accounted for. With a mild assumption, the parameter estimation accuracy has been improved by including more information into the likelihood function while neglecting the dependency between the random variables. As a consequence, the mean time to failure (MTTF) has been obtained and shows comparable result with IES TM-21-11 predictions, indicating the feasibility of the proposed method. Finally, the cumulative failure distribution was presented corresponding to different combinations of lumen maintenance and color shift. The results demonstrate that a joint failure distribution of LED devices could be modeled by simply considering their lumen maintenance and color shift as two independent variables.

Genetic Algorithm (GA)-Based Inclinometer Layout Optimization.

This paper presents numerical simulation results of an airflow inclinometer with sensitivity studies and thermal optimization of the printed circuit board (PCB) layout for an airflow inclinometer based on a genetic algorithm (GA). Due to the working principle of the gas sensor, the changes of the ambient temperature may cause dramatic voltage drifts of sensors. Therefore, eliminating the influence of the external environment for the airflow is essential for the performance and reliability of an airflow inclinometer. In this paper, the mechanism of an airflow inclinometer and the influence of different ambient temperatures on the sensitivity of the inclinometer will be examined by the ANSYS-FLOTRAN CFD program. The results show that with changes of the ambient temperature on the sensing element, the sensitivity of the airflow inclinometer is inversely proportional to the ambient temperature and decreases when the ambient temperature increases. GA is used to optimize the PCB thermal layout of the inclinometer. The finite-element simulation method (ANSYS) is introduced to simulate and verify the results of our optimal thermal layout, and the results indicate that the optimal PCB layout greatly improves (by more than 50%) the sensitivity of the inclinometer. The study may be useful in the design of PCB layouts that are related to sensitivity improvement of gas sensors.