High-performance laser power converters with resistance to thermal annealing.

High-performance laser power converters are crucial for laser wireless power transmission systems. Through the optimization of the resistive thermal annealing temperature applied to the laser power converter, the conversion efficiency reaches 55.0%. For 830 nm laser irradiation, the conversion efficiency further elevates to 59.3%. The potential for improvement remains substantial, with an anticipated increase to 63.8% achievable through the optimization of current matching at this specific wavelength. Moreover, the reliability of the laser power converter is demonstrated by its ability to 1,000 hours of operation at an elevated temperature of 180°C.

InP-based tunnel junctions for ultra-high concentration photovoltaics.

To enhance the performance of multi-junction photovoltaics, we investigated three different InP-based tunnel junction designs: p++-InGaAs/n++-InP tunnel junction, p++-InGaAs/i-InGaAs-/n++-InP tunnel junction, and p++-InGaAs/i-InGaAs/n++-InGaAs tunnel junction. The p++-InGaAs/i-InGaAs/n++-InGaAs tunnel junction demonstrated a peak tunneling current density of 495 A/cm2 and a resistivity of 9.3 × 10-4 Ωcm2, allowing the tunnel junction device to operate at a concentration over 30000 suns. This was achieved by inserting an undoped InGaAs quantum well at the p++-InGaAs/n++InGaAs junction interfaces, which enhanced its stability within the operating temperature range of multi-junction solar cells. Moreover, the p++-InGaAs/i-InGaAs/n++-InGaAs tunnel junction exhibited the lowest resistance.

High-performance laser power converts for wireless information transmission applications.

Laser Power Converters (LPCs) are components of the laser wireless power transmission (LWPT) system receiving laser power. This paper proposes a comprehensive test method that employs continuous, pulse-pause, and short-time techniques to evaluate the performance of six-junction GaAs LPCs operating with an optical input at 808 nm. Additionally, we investigate the performance of LPCs with different areas and achieve a conversion efficiency over 60%. Furthermore, we apply LPCs with varying areas to wireless information transmission and successfully achieve a response time of 1.7 µs.

1064†nm InGaAs metamorphic laser power converts with over 44% efficiency.

InGaAs metamorphic laser power converters (LPCs) have the potential to deliver electrical energy over distances of several kilometers. In this study, metalorganic chemical vapor deposition (MOCVD) was used to grow InGaAs-based LPCs with an absorption wavelength of 1064 nm. At step thicknesses of 2800 nm, overshoot thicknesses of 6000 nm, reverse component and thicknesses of 2.4% and 700 nm, respectively, a surface roughness of 6.0 nm and InGaAs (24%) lattice relaxation of 93.7% of the InGaAs metamorphic buffer were obtained. The I-V characteristics of LPCs with 10 × 10 mm2 apertures were investigated as a function of laser power and temperature. The maximum conversion efficiency of 44.1% and 550 hours of continuous stable operation at 4 W were demonstrated. Under 1064 nm laser illumination of 4 W, the temperature coefficients for the conversion efficiency and open-circuit voltage were -0.1%abs/°C and -1.6 mV/°C, respectively, and the LPC output power fluctuation was less than 0.5% during 216 hours of continuous temperature change from 20 to 100°C.

High performance p++-AlGaAs/n++-InGaP tunnel junctions for ultra-high concentration photovoltaics.

A p++-AlGaAs: C/n++-InGaP: Te tunnel junction with a record peak tunneling current density of 5518 A/cm2 was developed. This was achieved by inserting a 6.6 Šundoped GaAs quantum well at the junction interface, and the numerical model demonstrated that trap-assisted tunneling contributes to the high peak tunneling current. Furthermore, we found that the p++-AlGaAs: C/n++-InGaP: Si + Te tunnel junctions have lower resistance and better stability than p++-AlGaAs: C/n++-InGaP: Te tunnel junctions in the operating temperature range of the multijunction solar cells, and the peak tunneling current density of the p++-AlGaAs: C/n++-InGaP: Si + Te tunnel junctions excess 3000 A/cm2 with a voltage drop of 7.5 mV at 10000 suns.

High-performance laser power converts for direct-energy applications.

Six-junction GaAs laser power converts (LPCs) were designed and fabricated. Each subcell is vertically connected by p++-AlGaAs: C/n++-AlGaAs: Si: Te (1:2) tunnel junction with good thermal stability and a record peak tunneling current density of 1867 A/cm2. The I-V characteristics of LPCs with an aperture of 10×10 mm2 were investigated as a function of laser power and temperature. Maximum conversion efficiency and output power of 57.7% and 15.4 W, respectively, and a continuous stable operation at 22.9 W for over 550 hours were demonstrated. The temperature coefficient of conversion efficiency and open-circuit voltage were -0.197%abs/°C and -8.15 mV/°C, respectively, under 808 nm laser illumination of 21.0 W. Furthermore, an array of 100 large-scale (41×46 mm2) LPCs with an output power of 179 W under 1 kW laser irradiation at 20 m wireless transmission was developed.

Multifunctional optoelectronic device based on graphene-coupled silicon photonic crystal cavities.

We present a hybrid device based on graphene-coupled silicon (Si) photonic crystal (PhC) cavities, featuring triple light detection, modulation, and switching. Through depositing single-layer graphene onto the PhC cavity, the light-graphene interaction can be enhanced greatly, which enables significant detection and modulation of the resonant wavelength. The device is designed to generate a photocurrent directly by the photovoltaic effect and has an external responsivity of ∼14 mA/W at 1530.8 nm (on resonance), which is about 10 times higher than that off-resonance. Based on the thermo-optical effect of silicon and graphene, the device is also demonstrated in electro-optical and all-optical modulation. Also, due to the high-quality (Q) factor of the resonate cavity, the device can implement low threshold optical bistable switching, and it promises a fast response speed, with a rise (fall) time of ∼0.4 µs (∼0.5 µs) in the all-optical switch and a rise (fall) time of ∼0.5 µs (∼0.5 µs) in the electro-optical hybrid switch. The multifunctional photodetector, modulator, and optical bistable switch are achieved in a single device, which greatly reduces the photonic overhead and provides potential applications for future integrated optoelectronics.

Direct generation of vortex beams from a double-end polarized pumped Yb:KYW laser.

Double-end polarized pumping scheme combined with off-axis pumping technique has been first introduced to generate vortex beams in a z-type cavity. By employing double-end pumping, two different transverse modes can be excited simultaneously. The phase delay between these two modes can be finely tuned by manipulating the cavity structure. Direct emission of a chirality controllable Laguerre Gaussian LG01 vortex beam with slope efficiency of more than 40% has been realized by a double-end polarized pumped Yb:KYW laser. Other modes, such as dual-LG01 mode, cross-shaped mode, and LG10 mode, have also been demonstrated from our laser setup.

Generation of wavelength- and OAM-tunable vortex beam at low threshold.

Wavelength- and OAM- tunable laser with large tunable range is the key source for the application in large capacity optical communications. In this paper, we demonstrate a wavelength- and OAM-tunable vortex laser in a 1.2 W single mode fiber coupled LD pumped Yb:phosphate laser. A z-type cavity has been used to precisely control the laser mode diameter. A thin film polarizer (TFP) is inserted to finely control the intra-cavity loss and tune the wavelength. Corresponding laser fundamental mode to pump beam ratio has been optimized to decrease the pump threshold for high order HG mode running. A pair of cylindrical lenses has been used to convert the HG mode to vortex output. The vortex beam with OAM-tunable range from 1h to 14 h with wavelength tuning range of ~36.2 nm for LG0,1 vortex beam, and ~14.5 nm for LG0,14 vortex beam at pump power of only 1.2 W have been realized, which is the largest tuning range of both OAM and wavelength at ~1 W pump power range to the best of our knowledge.