Sensitive Organic Photodetectors With Spectral Response up to 1.3 µm Using a Quinoidal Molecular Semiconductor.

Detecting short-wavelength infrared (SWIR) light has underpinned several emerging technologies. However, the development of highly sensitive organic photodetectors (OPDs) operating in the SWIR region is hindered by their poor external quantum efficiencies (EQEs) and high dark currents. Herein, the development of high-sensitivity SWIR-OPDs with an efficient photoelectric response extending up to 1.3 µm is reported. These OPDs utilize a new ultralow-bandgap molecular semiconductor featuring a quinoidal tricyclic electron-deficient central unit and multiple non-covalent conformation locks. The SWIR-OPD achieves an unprecedented EQE of 26% under zero bias and an even more impressive EQE of up to 41% under a -4 V bias at 1.10 µm, effectively pushing the detection limit of silicon photodetectors. Additionally, the low energetic disorder and trap density in the active layer lead to significant suppression of thermal-generation carriers and dark current, resulting in excellent detectivity (Dsh *) exceeding 1013 Jones from 0.50 to 1.21 µm and surpassing 1012 Jones even at 1.30 µm under zero bias, marking the highest achievements for OPDs beyond the silicon limit to date. Validation with photoplethysmography measurements, a spectrometer prototype in the 0.35-1.25 µm range, and image capture under 1.20 µm irradiation demonstrate the extensive applications of this SWIR-OPD.

An A-D-A'-D-A-Type Narrow Bandgap Electron Acceptor Based on Selenophene-Flanked Diketopyrrolopyrrole for Sensitive Near-Infrared Photodetection.

Near-infrared organic photodetectors possess great application potential in night vision, optical communication, and image sensing, but their development is limited by the lack of narrow bandgap organic semiconductors. A-D-A'-D-A-type molecules, featuring multiple intramolecular charge transfer effects, offer a robust framework for achieving near-infrared light absorption. Herein, we report a novel A-D-A'-D-A-type narrow bandgap electron acceptor named DPPSe-4Cl, which incorporates a selenophene-flanked diketopyrrolopyrrole (Se-DPP) unit as its central A' component. This molecule demonstrates exceptional near-infrared absorption properties with an absorption onset reaching 1120 nm and a low optical bandgap of 1.11 eV, owing to the strong electron-withdrawing ability and quinoidal resonance effect induced by the Se-DPP unit. By implementing a doping compensation strategy assisted by Y6 to reduce the trap density in the photoactive layer, the optimized organic photodetector based on DPPSe-4Cl exhibited efficient spectral response and remarkable sensitivity in the range of 300-1100 nm. Particularly, a specific detectivity surpassing 1012 Jones in the wavelength range of 410-1030 nm is achieved. This work offers a promising approach for developing highly sensitive visible to near-infrared broadband photodetection technology using organic semiconductors.

An electron acceptor with an intrinsic quinoidal core for bulk-heterojunction organic solar cells and photodetectors.

An electron acceptor based on a quinoidal dipyrrolopyrazinedione core was synthesized for organic solar cells and photodetectors. A power conversion efficiency of 6.7% and a specific detectivity of 4.1 × 1013 Jones at 800 nm have been obtained, suggesting the promising prospects of quinoidal molecules for optoelectronic devices.

Synthesis of poly(ionic liquid) for trifunctional epoxy resin with simultaneously enhancing the toughness, thermal and dielectric performances.

Poly(ionic liquid) (PIL), integrating the characteristics of both polymers and ionic liquid, is synthesized and employed to modify diglycidyl-4,5-epoxy-cyclohexane-1,2-dicarboxylate (TDE-85). With the addition of PIL, the fracture toughness, and thermal and dielectric performances of TDE-85 were discovered to be simultaneously improved, meanwhile the tensile modulus and strength is increased. Upon an optimal loading of 3 wt% PIL, the critical stress intensity factor (K IC), tensile modulus and strength are raised by 92.9%, 13.3% and 10.7%, respectively. Multi-toughening mechanisms due to spherical domains of PIL formed in TDE-85 during curing are responsible for the improved toughness. Moreover, the dielectric and thermal properties of TDE-85 are also enhanced by adding PIL. With the optimal addition of 5 wt% PIL, the dielectric constant of the composites is enhanced by 62.5%, the glass transition temperature is increased by 16.58 °C and the residual weight of carbon is increased by 59%.