Pure ZrO2 Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing.

The recent discovery of ferroelectricity in pure ZrO2 has drawn much attention, but the information storage and processing performances of ferroelectric ZrO2-based nonvolatile devices remain open for further exploration. Here, a ZrO2 (∼8 nm)-based ferroelectric capacitor using RuO2 oxide electrodes is fabricated, and the ferroelectric orthorhombic phase evolution under electric field cycling is studied. A ferroelectric remnant polarization (2Pr) of >30 µC/cm2, leakage current density of ∼2.79 × 10-8 A/cm2 at 1 MV/cm, and estimated polarization retention of >10 years are achieved. When the ferroelectric capacitor is connected with a transistor, a memory window of ∼0.8 V and eight distinct states can be obtained in such a ferroelectric field-effect transistor (FeFET). Through the conductance manipulation of the FeFET, a high object image recognition accuracy of ∼93.32% is achieved on the basis of the CIFAR-10 dataset in the convolutional neural network (CNN) simulation, which is close to the result of ∼94.20% obtained by floating-point-based CNN software. These results demonstrate the potential of ferroelectric ZrO2 devices for nonvolatile memory and artificial neural network computing.

Polyphenylene Oxide Film Sandwiched between SiO2 Layers for High-Temperature Dielectric Energy Storage.

The commercial capacitor using dielectric biaxially oriented polypropylene (BOPP) can work effectively only at low temperatures (less than 105 °C). Polyphenylene oxide (PPO), with better heat resistance and a higher dielectric constant, is promising for capacitors operating at elevated temperatures, but its charge-discharge efficiency (η) degrades greatly under high fields at 125 °C. Here, SiO2 layers are magnetron sputtered on both sides of the PPO film, forming a composite material of SiO2/PPO/SiO2. Due to the wide bandgap and high Young's modulus of SiO2, the breakdown strength (Eb) of this composite material reaches 552 MV/m at 125 °C (PPO: 534 MV/m), and the discharged energy density (Ue) under Eb improves to 3.5 J/cm3 (PPO: 2.5 J/cm3), with a significantly enhanced η of 89% (PPO: 70%). Furthermore, SiO2/PPO/SiO2 can discharge a Ue of 0.45 J/cm3 with an η of 97% at 125 °C under 200 MV/m (working condition in hybrid electric vehicles) for 20,000 cycles, and this value is higher than the energy density (∼0.39 J/cm3 under 200 MV/m) of BOPP at room temperature. Interestingly, the metalized SiO2/PPO/SiO2 film exhibits valuable self-healing behavior. These results make PPO-based dielectrics promising for high-temperature capacitor applications.

γ-Ray Irradiation Significantly Enhances Capacitive Energy Storage Performance of Polymer Dielectric Films.

Polymer dielectric capacitors are fundamental in advanced electronics and power grids but suffer from low energy density, hindering miniaturization of compact electrical systems. It is shown that high-energy and strong penetrating γ-irradiation significantly enhances capacitive energy storage performance of polymer dielectrics. γ-irradiated biaxially oriented polypropylene (BOPP) films exhibit an extraordinarily high energy density of 10.4 J cm-3 at 968 MV m-1 with an efficiency of 97.3%. In particular, an energy density of 4.06 J cm-3 with an ultrahigh efficiency of 98% is reliably maintained through 20 000 charge-discharge cycles under 600 MV m-1. At 125 °C, the γ-irradiated BOPP film still delivers a high discharged energy density of 5.88 J cm-3 with an efficiency of 90% at 770 MV m-1. Substantial improvements are also achieved for γ-irradiated cycloolefin copolymers at a high temperature of 150 °C, verifying the strategy generalizability. Experimental and theoretical analyses reveal that the excellent performance should be related to the γ-irradiation induced polar functional groups with high electron affinity in the molecular chain, which offer deep energy traps to impede charge transport. This work provides a simple and generally applicable strategy for developing high-performance polymer dielectrics.

Silicon-Compatible Ferroelectric Tunnel Junctions with a SiO2/Hf0.5Zr0.5O2 Composite Barrier as Low-Voltage and Ultra-High-Speed Memristors.

The big data era requires ultrafast, low-power, and silicon-compatible materials and devices for information storage and processing. Here, ferroelectric tunnel junctions (FTJs) based on SiO2/Hf0.5Zr0.5O2 composite barrier and both conducting electrodes are designed and fabricated on Si substrates. The FTJ achieves the fastest write speed of 500 ps under 5 V (2 orders of magnitude faster than reported silicon-compatible FTJs) or 10 ns speed at a low voltage of 1.5 V (the lowest voltage among FTJs at similar speeds), low write current density of 1.3 × 104 A cm-2, 8 discrete states, good retention > 105 s at 85 °C, and endurance > 107. In addition, it provides a large read current (88 A cm-2) at 0.1 V, 2 orders of magnitude larger than reported FTJs. Interestingly, in FTJ-based synapses, gradually tunable conductance states (128 states) with high linearity (<1) are obtained by 10 ns pulses of <1.2 V, and a high accuracy of 91.8% in recognizing fashion product images is achieved by online neural network simulations. These results highlight that silicon-compatible HfO2-based FTJs are promising for high-performance nonvolatile memories and electrical synapses.

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf0.5Zr0.5O2 Thin Films.

The emergence of complementary metal-oxide semiconductor (CMOS)-compatible HfO2-based ferroelectric materials provides a promising way to achieve ferroelectric field-effect transistors (FeFETs) with a steep subthreshold swing (SS) reduced to below the Boltzmann thermodynamics limit (∼60 mV/dec at room temperature), which has important implications for lowering power consumption. In this work, a metal-oxide-semiconductor field-effect transistor (MOSFET) is connected with Hf0.5Zr0.5O2 (HZO)-based ferroelectric capacitors with different capacitances. By adjusting the capacitance of ferroelectric capacitors, an ultralow SS of ∼0.34 mV/dec in HfO2-based FeFETs can be achieved. More interestingly, by designing the sweeping voltage sequences, the SS can be adjusted to be 0 mV/dec with the drain current ranging over six orders of magnitude, and the threshold voltage for turning on the MOSFET can be further reduced. The manipulated SS could be attributed to the evolution of ferroelectric switching. Our work contributes to understanding the origin of ultralow SS in ferroelectric MOSFETs and the realization of low-power devices.

Significantly enhanced high-temperature capacitive energy storage in cyclic olefin copolymer dielectric films via ultraviolet irradiation.

Polymer dielectrics with high operation temperature (∼150 °C) and excellent capacitive energy storage performance are vital for electric power systems and advanced electronic devices. Here, a very convenient and competitive strategy by preparing ultraviolet-irradiated cyclic olefin copolymer films is demonstrated to be effective in improving the energy storage performance at high temperatures. Compared with the unirradiated film, irradiated films exhibit a higher dielectric constant, higher breakdown strength and stronger mechanical properties as a result of the emergence of the carbonyl group and cross-linking network. Consequently, with a high efficiency above 95%, a superior discharged energy density of ∼3.34 J cm-3 is achieved at 150 °C, surpassing the current dielectric polymers and polymer nanocomposites. In particular, the energy storage performance remains highly reliable over 20 000 cycles under actual operating conditions (200 MV m-1 at 150 °C) in hybrid electric vehicles. This research offers a valuable pathway to build high-energy-density polymer-based capacitor devices working under harsh environments.

Domain-wall magnetoelectric coupling in multiferroic hexagonal YbFeO3 films.

Electrical modulation of magnetic states in single-phase multiferroic materials, using domain-wall magnetoelectric (ME) coupling, can be enhanced substantially by controlling the population density of the ferroelectric (FE) domain walls during polarization switching. In this work, we investigate the domain-wall ME coupling in multiferroic h-YbFeO3 thin films, in which the FE domain walls induce clamped antiferromagnetic (AFM) domain walls with reduced magnetization magnitude. Simulation according to the phenomenological theory indicates that the domain-wall ME effect is dramatically enhanced when the separation between the FE domain walls shrinks below the characteristic width of the clamped AFM domain walls during the ferroelectric switching. Experimentally, we show that while the magnetization magnitude remains same for both the positive and the negative saturation polarization states, there is evidence of magnetization reduction at the coercive voltages. These results suggest that the domain-wall ME effect is viable for electrical control of magnetization.

Controllable Itinerant Ferromagnetism in Weakly Correlated 5d SrIrO3.

The weakly correlated nature of 5d oxide SrIrO3 determines its rare ferromagnetism, and the control of its magnetic order is even less studied. Tailoring structure distortion is currently a main route to tune the magnetic order of 5d iridates, but only for the spatially confined insulating counterparts. Here, we have realized ferromagnetic order in metallic SrIrO3 by construction of SrIrO3/ferromagnetic-insulator (LaCoO3) superlattices, which reveal a giant coercivity of ∼10 T and saturation field of ∼25 T with strong perpendicular magnetic anisotropy. The Curie temperature of SrIrO3 can be controlled by engineering interface charge transfer, which is confirmed by Hall effect measurements collaborating with EELS and XAS. Besides, the noncoplanar spin texture is captured, which is caused by interfacial Dzyaloshinskii-Moriya interactions as well. These results indicate controllable itinerant ferromagnetism and an emergent topological magnetic state in strong spin-orbit coupled semimetal SrIrO3, showing great potential to develop efficient spintronic devices.

Supercritical Relaxor Nanograined Ferroelectrics for Ultrahigh-Energy-Storage Capacitors.

Supercritical relaxor nanograined ferroelectrics are demonstrated for high-performance dielectric capacitors, showing record-high overall properties of energy density ≈13.1 J cm-3 and field-insensitive efficiency ≈90% at ≈74 kV mm-1 and superior charge-discharge performances of high power density ≈700 MW cm-3 , high discharge energy density ≈6.67 J cm-3 , and ultrashort discharge time <40 ns at 55 kV mm-1 . Ex/in situ transmission electron microscopy, Raman spectroscopy, and synchrotron X-ray diffraction provide clear evidence of the supercritical behavior in (Na,K)(Sb,Nb)O3 -SrZrO3 -(Bi0.5 Na0.5 )ZrO3 ceramics, being achieved by engineering the coexistence of multiple local symmetries within the ergodic relaxor zone. The vanished difference between the ground relaxor state and the high-field supercritical state eliminates polarization hysteresis. The supercritical evolution with electric field enables a highly delayed polarization saturation with continuously increased polarization magnitudes. The results demonstrate that such a design strategy of compositionally induced and field-manipulated supercritical behavior can be generalizable for developing desirable energy-storage dielectrics for applications in ceramic/film capacitors.

High-Speed Nanoscale Ferroelectric Tunnel Junction for Multilevel Memory and Neural Network Computing.

Ferroelectric tunnel junction (FTJ) is one promising candidate for next-generation nonvolatile data storage and neural network computing systems. In this work, the high-performance 50 nm-diameter Au/Ti/PbZr0.52Ti0.48O3 (∼3 nm, (111)-oriented)/Nb:SrTiO3 (Nb: 0.7 wt %) FTJs are achieved to demonstrate the scaling down capability of FTJ. As a nonvolatile memory, the FTJ shows eight distinct resistance states (3 bits) with a large ON/OFF ratio (>103), and these states can be switched at a fast speed of 10 ns. Intriguingly, the long-term potentiation/depression and spike timing-dependent plasticity, that is, fundamental functions of biological synapses, can be emulated in the nanoscale FTJ-based artificial synapse. A convolutional neural network (CNN) simulation is then carried out based on the experimental results, and a high recognition accuracy of ∼93.8% on fashion product images is obtained, which is very close to the result of ∼94.4% by a floating-point-based CNN software. In particular, the FTJ-based CNN simulation also exhibits robustness to input image noises. These results indicate the great potential of FTJ for high-density information storage and neural network computing.

Anomalous Structural Evolution and Glassy Lattice in Mixed-Halide Hybrid Perovskites.

Hybrid halide perovskites have emerged as highly promising photovoltaic materials because of their exceptional optoelectronic properties, which are often optimized via compositional engineering like mixing halides. It is well established that hybrid perovskites undergo a series of structural phase transitions as temperature varies. In this work, the authors find that phase transitions are substantially suppressed in mixed-halide hybrid perovskite single crystals of MAPbI3-x Brx (MA = CH3 NH3 + and x = 1 or 2) using a complementary suite of diffraction and spectroscopic techniques. Furthermore, as a general behavior, multiple crystallographic phases coexist in mixed-halide perovskites over a wide temperature range, and a slightly distorted monoclinic phase, hitherto unreported for hybrid perovskites, is dominant at temperatures above 100 K. The anomalous structural evolution is correlated with the glassy behavior of organic cations and optical phonons in mixed-halide perovskites. This work demonstrates the complex interplay between composition engineering and lattice dynamics in hybrid perovskites, shedding new light on their unique properties.

E2F6/KDM5C promotes SF3A3 expression and bladder cancer progression through a specific hypomethylated DNA promoter.

BACKGROUND: Abnormal expression of splicing factor 3A subunit 3 (SF3A3), a component of the spliceosome, has been confirmed to be related to the occurrence and development of various cancers. However, the expression and function of SF3A3 in bladder cancer (BC) remains unclear. METHODS: The SF3A3 mRNA and protein level were measured in clinical samples and cell lines by quantitative real-time PCR, Western blot and immunofluorescence staining. Evaluate the clinical correlation between SF3A3 expression and clinicopathological characteristics through statistical analysis in BC patients. The function of SF3A3 in BC cells was determined in vitro using MTT and colony analysis. Co-immunoprecipitation (CoIP) assay was used to detected E2F6 and KDM5C interaction. Luciferase reporter and chromatin immunoprecipitation (ChIP) were used to examine the relationship between E2F6/KDM5C and SF3A3 expression. RESULTS: In the present study, we demonstrated that expression of SF3A3 was elevated in BC tissue compared to the normal bladder tissue. Importantly, the upregulation of SF3A3 in patients was correlated with poor prognosis. Additionally, overexpression of SF3A3 promoted while depletion of SF3A3 reduced the growth of BC cells in vivo and in vitro. Data from the TCGA database and clinical samples revealed that hypomethylation of the DNA promoter leads to high expression of SF3A3 in BC tissue. We found that upregulation of lysine-specific demethylase 5C (KDM5C) promotes SF3A3 expression via hypomethylation of the DNA promoter. The transcription factor E2F6 interacts with KDM5C, recruits KDM5C to the SF3A3 promoter, and demethylates the GpC island of H3K4me2, leading to high SF3A3 expression and BC progression. CONCLUSIONS: The results demonstrated that depletion of the KDM5C/SF3A3 prevents the growth of BC in vivo and in vitro. The E2F6/KDM5C/SF3A3 pathway may be a potential therapeutic target for BC treatment.

High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing.

The rapid development of neuro-inspired computing demands synaptic devices with ultrafast speed, low power consumption, and multiple non-volatile states, among other features. Here, a high-performance synaptic device is designed and established based on a Ag/PbZr0.52Ti0.48O3 (PZT, (111)-oriented)/Nb:SrTiO3 ferroelectric tunnel junction (FTJ). The advantages of (111)-oriented PZT (~1.2 nm) include its multiple ferroelectric switching dynamics, ultrafine ferroelectric domains, and small coercive voltage. The FTJ shows high-precision (256 states, 8 bits), reproducible (cycle-to-cycle variation, ~2.06%), linear (nonlinearity <1) and symmetric weight updates, with a good endurance of >109 cycles and an ultralow write energy consumption. In particular, manipulations among 150 states are realized under subnanosecond (~630 ps) pulse voltages ≤5 V, and the fastest resistance switching at 300 ps for the FTJs is achieved by voltages <13 V. Based on the experimental performance, the convolutional neural network simulation achieves a high online learning accuracy of ~94.7% for recognizing fashion product images, close to the calculated result of ~95.6% by floating-point-based convolutional neural network software. Interestingly, the FTJ-based neural network is very robust to input image noise, showing potential for practical applications. This work represents an important improvement in FTJs towards building neuro-inspired computing systems.

Scalable Polyimide-Poly(Amic Acid) Copolymer Based Nanocomposites for High-Temperature Capacitive Energy Storage.

The developments of next-generation electric power systems and electronics demand for high temperature (≈150 °C), high energy density, high efficiency, scalable, and low-cost polymer-based dielectric capacitors are still scarce. Here, the nanocomposites based on polyimide-poly(amic acid) copolymers with a very low amount of boron nitride nanosheets are designed and synthesized. Under the actual working condition in hybrid electric vehicles of 200 MV m-1 and 150 °C, a high energy density of 1.38 J cm-3 with an efficiency higher than 96% is achieved. This is about 2.5 times higher than the room temperature energy density (≈0.39 J cm-3 under 200 MV m-1 ) of the commercially used biaxially oriented polypropylene, the benchmark of dielectric polymer. Especially, the energy density and efficiency at 150 °C show no sign of degradation after 20 000 cycles of charge-discharge test and 35 days' high-temperature endurance test. This research provides an effective and low-cost strategy to develop high-temperature polymer-based capacitors.

High-Speed Switching and Giant Electroresistance in an Epitaxial Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junction Memristor.

HfO2-based ferroelectric materials are good candidates for constructing next-generation nonvolatile memories and high-performance electronic synapses and have attracted extensive attention from both academia and industry. Here, a Hf0.5Zr0.5O2-based ferroelectric tunnel junction (FTJ) memristor is successfully fabricated by epitaxially growing a Hf0.5Zr0.5O2 film on a 0.7 wt % Nb-doped SrTiO3 (001) substrate with a buffer layer of La2/3Sr1/3MnO3 (∼1 u.c.). The FTJ shows a high switching speed of 20 ns, a giant electroresistance ratio of ∼834, and multiple states (eight states or three bits) with good retention >104 s. As a solid synaptic device, tunable synapse functions have also been obtained, including long-term potentiation, long-term depression, and spike-timing-dependent plasticity. These results highlight the promising applications of Hf0.5Zr0.5O2-based FTJ in ultrafast-speed and high-density nonvolatile memories and artificial synapses.

RBM24 exacerbates bladder cancer progression by forming a Runx1t1/TCF4/miR-625-5p feedback loop.

RNA-binding motif protein 24 (RBM24) acts as a multifunctional determinant of cell fate, proliferation, apoptosis, and differentiation during development by regulating premRNA splicing and mRNA stability. It is also implicated in carcinogenesis, but the functions of RBM24 in bladder cancer (BC) remain unclear. In the present study, we revealed that RBM24 was upregulated in BC tissues. Importantly, we found that a higher level of RBM24 was correlated with poor prognosis in BC patients. Overexpression of RBM24 promoted BC cell proliferation, while depletion of RBM24 inhibited BC cell proliferation in vivo and in vitro. Mechanistically, RBM24 positively regulated Runx1t1 expression in BC cells by binding to and enhancing Runx1t1 mRNA stability. Furthermore, Runx1t1 in turn promoted RBM24 expression by interacting with the transcription factor TCF4 and suppressing the transcription of miR-625-5p, which directly targets RBM24 and suppresses RBM24 expression. RBM24-regulated BC cell proliferation was moderated via the Runx1t1/TCF4/miR-625-5p feedback loop. These results indicate that the RBM24/Runx1t1/TCF4/miR-625-5p positive feedback loop participates in BC progression. Disruption of this pathway may be a potential therapeutic strategy for BC treatment.

Large-Area Crystalline Zeolitic Imidazolate Framework Thin Films.

We report that continuous MOF films with highly controlled thickness (from 44 to 5100 nm) can be deposited over length scales greater than 80 centimeters by a facile, fast, and cost-effective spray-coating method. Such success relies on our discovery of unprecedented perfectly dispersed colloidal solutions consisting of amorphous MOF nanoparticles, which we adopted as precursors that readily converted to the crystalline films upon low-temperature in situ heating. The colloidal solutions allow for the fabrication of compact and uniform MOF films on a great deal of substrates such as fluorine-doped tin oxide, glass, SiO2 , Al2 O3 , Si, Cu, and even flexible polycarbonate, widening their technological applications where substrates are essential. Despite the present work focuses on the fabrication of uniform cobalt-(2-methylimidazole)2 and zinc-(2-methylimidazole)2 films, our findings mark a great possibility in producing other high-quality MOF thin films on a large scale.

Identification of a potentially functional circRNA-miRNA-mRNA ceRNA regulatory network in bladder cancer by analysis of microarray data.

BACKGROUND: Circular RNAs (circRNAs) have received increasing attention in cancer development. However, a substantial number of circRNAs still require characterization. The purpose of this study is to uncover novel circRNAs and their molecular mechanism in bladder cancer (BCa). METHODS: A combinative strategy of extensive data mining and computational biology was employed to identify BCa-related circRNAs and explore their potential mechanisms of action. RESULTS: Three differentially expressed circRNAs (has_circ_0023642, has_circ_0047322, has_circ_0041151) were obtained from the microarray dataset (GSE92675). Four miRNAs (miR-616, miR-515-5p, miR-647, miR-1178) with potential binding sites with these three circRNAs were identified. Pathway analysis demonstrated that all four miRNAs were closely associated with some cancer-related pathways. Survival analysis indicated that these miRNAs might potentially play a role in tumor-suppressive functions in BCa. Subsequently, 181 overlapping genes were identified from 472 up-regulated genes in BCa (TCGA database), and 10,017 predicted target genes of the four miRNAs obtained. A circRNA-miRNA-mRNA network was constructed on the identified three circRNAs, four miRNAs, and 181 overlapping genes. Besides, six hub genes (CENPA, HIST1H2BJ, HIST1H2BO, HIST1H3H, HIST1H3B, HIST1H3F) were identified from establishing a protein-protein interaction (PPI) network on the same overlapping genes. Furthermore, a circRNA-miRNA-hub gene sub-network was built to delineate the links among the differential circRNAs, miRNA, and hub genes. CONCLUSIONS: Our study provided significant insights into the molecular mechanisms that regulate the progression of BCa from the circRNA-miRNA-mRNA network view.

Negatively Charged Nanosheets Significantly Enhance the Energy-Storage Capability of Polymer-Based Nanocomposites.

Polymer-based dielectric materials play a key role in advanced electronic devices and electric power systems. Although extensive research has been devoted to improve their energy-storage performances, it is a great challenge to increase the breakdown strength of polymer nanocomposites in terms of achieving high energy density and good reliability under high voltages. Here, a general strategy is proposed to significantly improve their breakdown strength and energy storage by adding negatively charged Ca2 Nb3 O10 nanosheets. A dramatically enhanced breakdown strength (792 MV m-1 ) and the highest energy density (36.2 J cm-3 ) among all flexible polymer-based dielectrics are observed in poly(vinylidene fluoride)-based nanocomposite capacitors. The strategy generalizability is verified by the similar substantial enhancements of breakdown strength and energy density in polystyrene-based nanocomposites. Phase-field simulations demonstrate that the further enhanced breakdown strength is ascribed to the local electric field, produced by the negatively charged Ca2 Nb3 O10 nanosheets sandwiched with the positively charged polyethyleneimine, which suppresses the secondary impact-ionized electrons and blocks the breakdown path in nanocomposites. The results demonstrate a new horizon of high-energy-density flexible capacitors.

Enhanced thermoelectric efficiency in nanocrystalline bismuth telluride nanotubes.

We report on the thermal and thermoelectric properties of individual nanocrystalline Bi2 Te3 nanotubes synthesized by the solution phase method using 3ω method and a microfabricated testbench. Measurements show that the nanotubes offer improved ZT compared to bulk Bi2Te3 near room temperature due to an enhanced Seebeck coefficient and suppressed thermal conductivity. This improvement in ZT originates from the nanocrystalline nature and low dimensionality of the nanotubes. Domain boundary filtering of low-energy electrons provides an enhanced Seebeck coefficient. The scattering of phonons at the surface of the nanotube leads to suppressed thermal conductivity. These have been theoretically analyzed using the Boltzmann equation based on the relaxation time approximation and Landauer approach. This work clearly demonstrates the possibility of achieving enhancement in thermoelectric efficiency by combining nanocrystalline and low-dimensional systems.