Topological Transition of Superconductivity in Dirac Semimetal Nanowire Josephson Junctions.

We report the topological transition by gate control in a Cd_{3}As_{2} Dirac semimetal nanowire Josephson junction with diameter of about 64 nm. In the electron branch, the quantum confinement effect enforces the surface band into a series of gapped subbands and thus nontopological states. In the hole branch, however, because the hole mean free path is smaller than the nanowire perimeter, the quantum confinement effect is inoperative and the topological property maintained. The superconductivity is enhanced by gate tuning from electron to hole conduction, manifested by a larger critical supercurrent and a larger critical magnetic field, which is attributed to the topological transition from gapped surface subbands to a gapless surface band. The gate-controlled topological transition of superconductivity should be valuable for manipulation of Majorana zero modes, providing a platform for future compatible and scalable design of topological qubits.

Reducing Electronic Transport Dimension to Topological Hinge States by Increasing Geometry Size of Dirac Semimetal Josephson Junctions.

The notion of topological phases has been extended to higher-order and has been generalized to different dimensions. As a paradigm, Cd_{3}As_{2} is predicted to be a higher-order topological semimetal, possessing three-dimensional bulk Dirac fermions, two-dimensional Fermi arcs, and one-dimensional hinge states. These topological states have different characteristic length scales in electronic transport, allowing one to distinguish their properties when changing sample size. Here, we report an anomalous dimensional reduction of supercurrent transport by increasing the size of Dirac semimetal Cd_{3}As_{2}-based Josephson junctions. An evolution of the supercurrent quantum interferences from a standard Fraunhofer pattern to a superconducting quantum interference device (SQUID)-like one is observed when the junction channel length is increased. The SQUID-like interference pattern indicates the supercurrent flowing through the 1D hinges. The identification of 1D hinge states should be valuable for deeper understanding of the higher-order topological phase in a 3D Dirac semimetal.

Topological Semimetal Nanostructures: From Properties to Topotronics.

Characterized by bulk Dirac or Weyl cones and surface Fermi-arc states, topological semimetals have sparked enormous research interest in recent years. The nanostructures, with large surface-to-volume ratio and easy field-effect gating, provide ideal platforms to detect and manipulate the topological quantum states. Exotic physical properties originating from these topological states endow topological semimetals attractive for future topological electronics (topotronics). For example, the linear energy dispersion relation is promising for broadband infrared photodetectors, the spin-momentum locking nature of topological surface states is valuable for spintronics, and the topological superconductivity is highly desirable for fault-tolerant qubits. For real-life applications, topological semimetals in the form of nanostructures are necessary in terms of convenient fabrication and integration. Here, we review the recent progresses in topological semimetal nanostructures and start with the quantum transport properties. Then topological semimetal-based electronic devices are introduced. Finally, we discuss several important aspects that should receive great effort in the future, including controllable synthesis, manipulation of quantum states, topological field effect transistors, spintronic applications, and topological quantum computation.

Fermi-arc supercurrent oscillations in Dirac semimetal Josephson junctions.

One prominent hallmark of topological semimetals is the existence of unusual topological surface states known as Fermi arcs. Nevertheless, the Fermi-arc superconductivity remains elusive. Here, we report the critical current oscillations from surface Fermi arcs in Nb-Dirac semimetal Cd3As2-Nb Josephson junctions. The supercurrent from bulk states are suppressed under an in-plane magnetic field ~0.1 T, while the supercurrent from the topological surface states survives up to 0.5 T. Contrary to the minimum normal-state conductance, the Fermi-arc carried supercurrent shows a maximum critical value near the Dirac point, which is consistent with the fact that the Fermi arcs have maximum density of state at the Dirac point. Moreover, the critical current exhibits periodic oscillations with a parallel magnetic field, which is well understood by considering the in-plane orbital effect from the surface states. Our results suggest the Dirac semimetal combined with superconductivity should be promising for topological quantum devices.

4π-Periodic Supercurrent from Surface States in Cd_{3}As_{2} Nanowire-Based Josephson Junctions.

The combination of superconductivity and surface states in Dirac semimetal can produce a 4π-periodic supercurrent in a Josephson junction configuration, which can be revealed by the missing of odd Shapiro steps (especially the n=1 step). However, the suppression of the n=1 step is also anticipated in the high-power oscillatory regime of the ordinary 2π-periodic Josephson effect, which is irrelevant to the 4π-periodic supercurrent. Here, in order to identify the origin of the suppressed n=1 step, we perform the measurements of radio frequency irradiation on Nb-Dirac semimetal Cd_{3}As_{2} nanowire-Nb junctions with continuous power dependence at various frequencies. Besides the n=1 step suppression, we uncover a residual supercurrent of first node at the n=0 step, which provides a direct and predominant signature of the 4π-periodic supercurrent. Furthermore, by tuning the gate voltage, we can modulate the surface and bulk state contribution and the visibility of the n=1 step. Our results provide deep insights to explore the topological superconductivity in Dirac semimetals.

Astrocyte Elevated Gene 1 (AEG-1) Acts as a Promoter Gene in Clear Cell Renal Cell Carcinoma Cell Growth and Metastasis.

BACKGROUND Clear cell renal cell carcinoma (ccRCC) is usually incurable once it progresses to metastatic stage. Hence, in-depth investigations to reveal the precise molecular mechanisms behind the metastasis of ccRCC are required to improve the therapeutic outcome of ccRCC. MATERIAL AND METHODS The level of astrocyte elevated gene 1 (AEG-1) in ccRCC tissues and cell lines was determined by quantitative real-time PCR (qRT-PCR) assay. The MTS, colony formation, wound-healing, and Transwell invasion assays were used to assess the role of AEG-1 in ccRCC cells growth, migration, and invasion in vitro, respectively. Xenograft model and lung metastasis models were constructed to analyze the functions of AEG-1 in ccRCC cells growth and metastasis in vivo. RESULTS We found that AEG-1 was overexpressed in ccRCC and was associated with the progression of ccRCC. Knocked-down AEG-1 impaired the migration and invasion of ccRCC cells in vitro. Furthermore, under-expression of AEG-1 caused complete inhibition of ccRCC cells growth and metastasis in vivo. In contrast, overexpression of AEG-1 significantly increased the migration and invasion ability of ccRCC cells in vitro. Finally, we revealed that AEG-1 boosted the metastatic ability of ccRCC cells via regulating Notch homolog 1 (Notch1). CONCLUSIONS The AEG-1/Notch1 signaling axis plays a vital role in ccRCC cell growth and metastasis.

Ultrafast Broadband Photodetectors Based on Three-Dimensional Dirac Semimetal Cd3As2.

Photodetection with extreme performances in terms of ultrafast response time, broad detection wavelength range, and high sensitivity has a wide range of optoelectronic and photonic applications, such as optical communications, interconnects, imaging, and remote sensing. Graphene, a typical two-dimensional Dirac semimetal, has shown excellent potential toward a high-performance photodetector with high operation speed, broadband response, and efficient carrier multiplications benefiting from its linear dispersion band structure with a high carrier mobility and zero bandgap. As the three-dimensional analogues of graphene, Dirac semimetal Cd3As2 processes all advantages of graphene as a photosensitive material but potentially has stronger interaction with light as a bulk material and thus enhanced responsivity. In this work, we report the realization of an ultrafast broadband photodetector based on Cd3As2. The prototype metal-Cd3As2-metal photodetector exhibits a responsivity of 5.9 mA/W with a response time of about 6.9 ps without any special device optimization. Broadband responses from 532 nm to 10.6 µm are achieved with a potential detection range extendable to far-infrared and terahertz. Systematical studies indicate that the photothermoelectric effect plays an important role in photocurrent generation. Our results suggest this emerging class of exotic quantum materials can be harnessed for photodetection with a high sensitivity and high speed (∼145 GHz) over a broad wavelength range.

Quantification of light-enhanced ionic transport in lead iodide perovskite thin films and its solar cell applications.

Ionic transport in organometal halide perovskites is of vital importance because it dominates anomalous phenomena in perovskite solar cells, from hysteresis to switchable photovoltaic effects. However, excited state ionic transport under illumination has remained elusive, although it is essential for understanding the unusual light-induced effects (light-induced self-poling, photo-induced halide segregation and slow photoconductivity response) in organometal halide perovskites for optoelectronic applications. Here, we quantitatively demonstrate light-enhanced ionic transport in CH3NH3PbI3 over a wide temperature range of 17-295 K, which reveals a reduction in ionic transport activation energy by approximately a factor of five (from 0.82 to 0.15 eV) under illumination. The pure ionic conductance is obtained by separating it from the electronic contribution in cryogenic galvanostatic and voltage-current measurements. On the basis of these findings, we design a novel light-assisted method of catalyzing ionic interdiffusion between CH3NH3I and PbI2 stacking layers in sequential deposition perovskite synthesis. X-ray diffraction patterns indicate a significant reduction of PbI2 residue in the optimized CH3NH3PbI3 thin film produced via light-assisted sequential deposition, and the resulting solar cell efficiency is increased by over 100% (7.5%-15.7%) with little PbI2 residue. This new method enables fine control of the reaction depth in perovskite synthesis and, in turn, supports light-enhanced ionic transport.

Strain-Gradient Modulated Exciton Emission in Bent ZnO Wires Probed by Cathodoluminescence.

Photoelectrical properties of semiconductor nanostructures are expected to be improved significantly by strain engineering. Besides the local strain, the strain gradient is promising to tune the luminescence properties by modifying the crystal symmetry. Here, we report the investigation of strain-gradient induced symmetry-breaking effect on excitonic states in pure bending ZnO microwires by high spatial-resolved cathodoluminescence at low temperature of 80 K. In addition to the local-strain induced light emission peak shift, the bound exciton emission photon energy shows an extraordinary jump of ∼16.6 meV at a high strain-gradient of 1.22% µm-1, which is ascribed to the strain gradient induced symmetry-breaking. Such a symmetry-breaking lifts the energy degeneracy of the electronic band structures, which significantly modifies the electron-hole interactions and the fine structures of the bound exciton states. These results provide a further understanding of the strain gradient effect on the excitonic states and possess a potential for the applications in optoelectronic devices.

Anti-cancer effect of ursolic acid activates apoptosis through ROCK/PTEN mediated mitochondrial translocation of cofilin-1 in prostate cancer.

Ursolic acid is a type of pentacyclic triterpene compound with multiple pharmacological activities including cancer resistance, protection from liver injury, antisepsis, anti-inflammation and antiviral activity. The present study aimed to investigate the anticancer effect of ursolic acid. Ursolic acid activates cell apoptosis and its pro-apoptotic mechanism remains to be fully elucidated. Cell Counting kit-8 assays, flow cytometric analysis and analysis of caspase-3 and caspase-9 activity were used to estimate the anticancer effect of ursolic acid on DU145 prostate cancer cells. The protein expression of cytochrome c, rho-associated protein kinase (ROCK), phosphatase and tensin homolog (PTEN) and cofilin-1 were examined using western blot analysis. In the present study, ursolic acid significantly suppressed cell growth and induced apoptosis, as well as increasing caspase-3 and caspase-9 activities of DU145 cells. Furthermore, cytoplasmic and mitochondrial cytochrome c protein expression was significantly activated and suppressed, respectively, by ursolic acid. Ursolic acid significantly suppressed the ROCK/PTEN signaling pathway and inhibited cofilin-1 protein expression in DU145 cells. The results of the present study indicate that the anticancer effect of ursolic acid activates cell apoptosis through ROCK/PTEN mediated mitochondrial translocation of cofilin-1 in prostate cancer.

Aharonov-Bohm oscillations in Dirac semimetal Cd3As2 nanowires.

Three-dimensional Dirac semimetals, three-dimensional analogues of graphene, are unusual quantum materials with massless Dirac fermions, which can be further converted to Weyl fermions by breaking time reversal or inversion symmetry. Topological surface states with Fermi arcs are predicted on the surface and have been observed by angle-resolved photoemission spectroscopy experiments. Although the exotic transport properties of the bulk Dirac cones have been demonstrated, it is still a challenge to reveal the surface states via transport measurements due to the highly conductive bulk states. Here, we show Aharonov-Bohm oscillations in individual single-crystal Cd3As2 nanowires with low carrier concentration and large surface-to-volume ratio, providing transport evidence of the surface state in three-dimensional Dirac semimetals. Moreover, the quantum transport can be modulated by tuning the Fermi level using a gate voltage, enabling a deeper understanding of the rich physics residing in Dirac semimetals.

Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires.

Dirac electronic materials beyond graphene and topological insulators have recently attracted considerable attention. Cd3As2 is a Dirac semimetal with linear dispersion along all three momentum directions and can be viewed as a three-dimensional analogue of graphene. By breaking of either time-reversal symmetry or spatial inversion symmetry, the Dirac semimetal is believed to transform into a Weyl semimetal with an exotic chiral anomaly effect, however the experimental evidence of the chiral anomaly is still missing in Cd3As2. Here we show a large negative magnetoresistance with magnitude of -63% at 60 K and -11% at 300 K in individual Cd3As2 nanowires. The negative magnetoresistance can be modulated by gate voltage and temperature through tuning the density of chiral states at the Fermi level and the inter-valley scatterings between Weyl nodes. The results give evidence of the chiral anomaly effect and are valuable for understanding the Weyl fermions in Dirac semimetals.

Zeeman effect on surface electron transport in topological insulator Bi2Se3 nanoribbons.

Topological insulators have exotic surface states that are massless Dirac fermions, manifesting special magnetotransport properties, such as the Aharonov-Bohm effect, Shubnikov-de Haas oscillations, and weak antilocalization effects. In the surface Dirac cone, the band structures are typically closely related to the p-orbitals and possess helical orbital texture. Here we report on the tunability of the transport properties via the interaction between the magnetic field and the spin-orbital angular momentum of the surface states in individual Bi2Se3 nanoribbons. Because the surface states have a large Landé factor and helical spin-orbital texture, the in-plane magnetic field induced Zeeman energy will result in the deformation of the Dirac cone, which gives rise to spin polarization of the surface states. The spin-dependent scattering of the conducting electrons on the existing local magnetic moments produces a giant negative magnetoresistance. The negative magnetoresistance is robust with a ratio of -20% at 2 K and -0.5% at 300 K under 14 T. The results are valuable for possible orbital-electronics based on topological insulators.

Lateral graphene p-n junctions formed by the graphene/MoS2 hybrid interface.

Graphene/two-dimensional (2D) semiconductor heterostructures have been demonstrated to possess many advantages for electronic and optoelectronic devices. However, there are few reports about the utilization of a 2D semiconductor monolayer to tune the properties of graphene. Here, we report the fabrication and characterization of graphene p-n junctions based on graphene/MoS2 hybrid interfaces. Monolayered graphene across the monolayered MoS2 boundary is divided into n-type regions on the MoS2 and p-type regions on the SiO2 substrate. Such van der Waals heterostructure based graphene p-n junctions show good photoelectric properties. The photocurrent modulation of such devices by a single back gate is also demonstrated for the first time, which shows that the graphene on and off MoS2 regions have different responses to the gate voltage. Our results suggest that the atomic thin hybrid structure can remarkably extend the device applications.

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode.

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

Magnetotransport across the metal-graphene hybrid interface and its modulation by gate voltage.

The graphene-metal contact is very important for optimizing the performance of graphene based electronic devices. However, it is difficult to probe the properties of the graphene/metal interface directly via transport measurements in traditional graphene lateral devices, because the dominated transport channel is graphene, not the interface. Here, we employ the Au/graphene/Au vertical and lateral hybrid structure to unveil the metal-graphene interface properties, where the transport is dominated by the charge carriers across the interface. The magnetoresistance (MR) of Au/monolayer graphene/Au and Au/stacked two-layered graphene/Au devices is measured and modulated by gate voltage, demonstrating that the interface is a device. The gate-tunable MR is identified from the graphene lying on the SiO2 substrate and underneath the top metal electrode. Our unique structures couple the in-plane and out-of-plane transport and display linear MR with small amplitude oscillations at low temperatures. Under a magnetic field, the electronic coupling between the graphene edge states and the electrode leads to the appearance of quantum oscillations. Our results not only provide a new pathway to explore the intrinsic transport mechanism at the graphene/metal interface but also open up new vistas of magnetoelectronics.

Vertically architectured stack of multiple graphene field-effect transistors for flexible electronics.

Vertically architectured stack of multiple graphene field-effect transistors (GFETs) on a flexible substrate show great mechanical flexibility and robustness. The four GFETs are integrated in the vertical direction, and dually gated GFETs with graphene channel, PMMA dielectrics, and graphene gate electrodes are realized.

Topological surface state enhanced photothermoelectric effect in Bi2Se3 nanoribbons.

The photothermoelectric effect in topological insulator Bi2Se3 nanoribbons is studied. The topological surface states are excited to be spin-polarized by circularly polarized light. Because the direction of the electron spin is locked to its momentum for the spin-helical surface states, the photothermoelectric effect is significantly enhanced as the oriented motions of the polarized spins are accelerated by the temperature gradient. The results are explained based on the microscopic mechanisms of a photon induced spin transition from the surface Dirac cone to the bulk conduction band. The as-reported enhanced photothermoelectric effect is expected to have potential applications in a spin-polarized power source.

Magnetic moments in graphene with vacancies.

Vacancies can induce local magnetic moments in graphene, paving the way to make magnetic functional graphene. Due to the interaction between magnetic moments and conduction carriers, the magnetotransport properties of graphene can be modulated. Here, the effects of vacancy induced magnetic moments on the electrical properties of graphene are studied via magnetotransport measurements and spin-polarized density functional theory calculations. We show by quantum Hall measurements that a sharp resonant Vπ state is introduced in the midgap region of graphene with vacancies, resulting in the local magnetic moment. The coupling between the localized Vπ state and the itinerant carrier is tuned by varying the carrier concentration, temperature, magnetic field, and vacancy density, which results in a transition between hopping transport and the Kondo effect and a transition between giant negative magnetoresistance (MR) and positive MR. This modulated magnetotransport is valuable for graphene based spintronic devices.

Fabrication and electrical properties of stacked graphene monolayers.

We develop a simple method to fabricate the two-stacked graphene monolayers and investigate the electronic transport in such a system. The independence of the two graphene monolayers gives rise to the asymmetric resistance-gate voltage curves and an eight-fold degeneracy of Landau level. The position of the maximum resistance of the transfer curves shifts towards higher gate voltage with increasing magnetic field, which is attributed to the magnetic field induced interlayer decoupling of the stacked graphene monolayers.