High-Selectivity Hydrogen Gas Sensors based on Mesoporous PbOx -ZnO Nanocomposites.

Hydrogen heralded as a promising renewable and environmentally friendly energy carrier, carries inherent risks owing to its highly flammable nature. A mere 4 % concentration of hydrogen in the air can trigger an explosion. To counteract this peril, a composite material comprising PbOX -ZnO (2 : 1) was synthesized, characterized, and subsequently employed to fabricate a hydrogen sensing device. Various analytical tools were used to characterize as-deposited materials, including X-ray diffraction, Scanning electron microscopy /Energy Dispersive X-ray Spectroscopy, Transmission electron microscopy UV-Vis Reflectance Spectroscopy and Fourier-transform infrared spectroscopy. The device exhibited favorable properties, such as good selectivity, stability, and a low detection limit for hydrogen. At ambient room temperature, the device demonstrated a sensing signal reaching 468.7, with a response time (T90) of 155 seconds and a recovery time (Tr90) of 69 seconds when exposed to a hydrogen concentration of 5 ppm. This performance underscores the device's rapid and effective response to hydrogen exposure. Moreover, the PbOX-ZnO (2 : 1) composite-based device exhibited a detection limit of 2.4 ppm, functioning accurately within a linear range spanning from 5 ppm to 50 ppm. This capability confirms its precision in accurately detecting hydrogen concentrations within this designated range.

Photochromic Dithienylethene Monolayer-Modified Gold Nanoparticles as a Tunable Floating Gate in the Fabrication of Nonvolatile Organic Memory.

Nonvolatile memory (NVM) devices were fabricated by implanting a self-assembled monolayer (SAM) of functional dithienylethene (DTE) derivative on the gold nanoparticle (Au-NP) surface in a pentacene-based organic transistor. The Au-NPs and DTE served as a charge-trapping medium and tunneling barrier layer, respectively. The transfer characteristic of the NVM device showed a narrow hysteresis window and wide memory window, indicating that the DTE-SAM served as a variable barrier layer to regulate the trapping and detrapping of external free charges at the Au-NPs. The energy gap introduced by the DTE-SAM is modulated through photoisomerization between a ring-open form and a ring-closed form by absorbing UV or visible light. For a memory device, the ring-closed DTE allows more free charge injection into the trapping sites, and the ring-open one better retains the trapped charges. A longer anchoring alkanethiol chain at the DTE moiety can further extend the device's retention time. For the NVM operation, programming with the ring-closed DTE and then switching the DTE structure to the ring-open form for erasing can facilitate the charge trapping and charge retention with the same molecule compared to operating all in the ring-open form or all in the ring-closed form of DTE. The structural characterization and electronic characteristics of these devices are discussed in detail.

Formation of ZnO/Zn0.5Cd0.5Se Alloy Quantum Dots in the Presence of High Oleylamine Contents.

To the best of our knowledge, this report presents, for the first time, the schematic of the possible chemical reaction for a one-pot synthesis of Zn0.5Cd0.5Se alloy quantum dots (QDs) in the presence of low/high oleylamine (OLA) contents. For high OLA contents, high-resolution transmission electron microscopy (HRTEM) results showed that the average size of Zn0.5Cd0.5Se increases significantly from 4 to 9 nm with an increasing OLA content from 4 to 10 mL. First, [Zn(OAc)2]-OLA complex can be formed by a reaction between Zn(OAc)2 and OLA. Then, Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) data confirmed that ZnO is formed by thermal decomposition of the [Zn(OAc)2]-OLA complex. The results indicated that ZnO grew on the Zn0.5Cd0.5Se surface, thus increasing the particle size. For low OLA contents, HRTEM images were used to estimate the average sizes of the Zn0.5Cd0.5Se alloy QDs, which were approximately 8, 6, and 4 nm with OLA loadings of 0, 2, and 4 mL, respectively. We found that Zn(OAc)2 and OLA could form a [Zn(OAc)2]-OLA complex, which inhibited the growth of the Zn0.5Cd0.5Se alloy QDs, due to the decreasing reaction between Zn(oleic acid)2 and Se2-, which led to a decrease in particle size.

Enhanced Deep-Ultraviolet Responsivity in Aluminum-Gallium Oxide Photodetectors via Structure Deformation by High-Oxygen-Pressure Pulsed Laser Deposition.

Aluminum-gallium oxide (AGO) thin films with wide bandgaps of greater than 5.0 eV were grown using pulsed laser deposition. As evidenced by X-ray photoelectron spectroscopy, X-ray diffraction, and transmission electron microscopy, the oxygen chamber pressure considerably affected the lattice deformation in the AGO materials. Under high oxygen pressure, the lattice deformation reduced the d-spacing of the AGO(-201) plane. In the measured transmittance spectra of the AGO films, this narrowing of the d-spacing in the main plane manifested as a high-energy shift of the absorption edge. The AGO films were then installed as the active layers in the metal-semiconductor-metal photodetectors (PDs). The lattice deformation was observed to enhance the photocurrent and reduce the dark current of the device. The responsivity was 20.7 times higher in the lattice-deformed AGO-based PD sample than that in the nondeformed sample. It appeared that the lattice deformation induced the separation of the piezopotential, improving the efficiency of the photogenerated carrier recombination and, consequently, shortening the decay time of the photodetector.