RESUMO
Heteroatom doping of graphene is a promising approach for tailoring its chemical and electronic properties-a prerequisite for many applications such as sensing, catalysis, and energy storage. Doping chemical vapour deposition (CVD) graphene with nitrogen during growth (in situdoping) is a common strategy, but it produces a distribution of inequivalent dopant sites and requires substantial modifications to the CVD growth process. In this study, we demonstrate a novel and simple oxide-mediated approach to introduce nitrogen dopants into pre-existing CVD graphene (ex situdoping) which achieves comparable doping densities toin situdoping methodologies. Furthermore, we demonstrate that thermal annealing of N-doped graphene can selectively remove pyridinic, retaining graphitic and pyrrolic nitrogen dopants, offering an attractive route to further modify graphene functionality. The methodologies we present are simple and scalable to precisely tailor graphene properties without the need to alter CVD growth protocols.
RESUMO
Graphene nanobubbles (GNBs) are formed from matter trapped between a two-dimensional material and a substrate. Such structures exhibit a wide range of new fundamental phenomena and are promising for nanoelectronic applications. However, a central part of the synthesis methods leads to the formation of GNBs with undetermined matter composition. Moreover, none of the GNBs' synthesis methods allow one to control the type of trapped matter. In a recent paper [K. M. Zahra, PCCP, 22,7606 (2020)], the authors proposed a new approach that allows the production of GNBs on a copper substrate with pure nitrogen inside in a controlled manner. In this work, we continue this research by studying the geometry of the GNBs in detail and indirectly measuring the internal pressure, which depends on the van der Waals adhesion energy and elastic properties of the graphene membrane. In agreement with other studies, we observe that dome-shaped bubbles exhibit universal scaling law, i.e., constant height to radius ratio. However, the measured height to radius ratio differs significantly from the known results of experiments and computer simulations. This deviation is explained by applying the membrane theory and taking into account the high adhesion of the copper substrate and graphene sheet. The adhesion energy calculated based on experimental data is close to the measurements performed by other experimental techniques.
RESUMO
Vibrational modes of chemical bonds in organic erbium (Er3+) materials play an important role in determining the efficiency of the 1.5 µm Er3+ emission. This work studies the energy coupling of the Er3+ intra-4f transitions and vibrational modes. The results demonstrate that the coupling introduces enormous nonradiative internal relaxation, which condenses the excited erbium population on to the 4I13/2 state. This suggests that vibrational modes can be advantageous for optimizing the branching ratio for the 1.5 µm transition in organic erbium materials. Through control of the quenching effect on to the 4I13/2 state and a reliable determination of intrinsic radiative rates, it is found that the pump power for population inversion can be reduced by an order of magnitude at high erbium concentrations compared to conventional inorganic erbium materials.
RESUMO
Graphene nanobubbles (GNBs) have become the subject of recent research due to their novel physical properties. However, present methods to create them involve either extreme conditions or complex sample fabrication. We present a novel approach which relies on the intercalation of small molecules (NH3), their surface-mediated decomposition and the formation of larger molecules (N2) which are then entrapped beneath the graphene in bubbles. Our hypothesised reaction mechanism requires the copper substrate, on which our graphene is grown via chemical vapour deposition (CVD), to be oxidised before the reaction can occur. This was confirmed through X-ray photoelectron spectroscopy (XPS) data of both oxidised and reduced Cu substrate samples. The GNBs have been analysed through atomic force microscopy (AFM, after NH3 treatment) and XPS, which reveals the formation of five distinct N 1s peaks, attributed to N2 entrapment, N doping species and atomic nitrogen bonded with the Cu within the substrate. This method is simple, occurs at low temperatures (520 K) and integrates very easily with conventional CVD graphene growth, so presents an opportunity to open up this field of research further.