Study on the mechanism of arsenic-induced renal injury based on SWATH proteomics technology.

BACKGROUND: Arsenic (As) poisoning is a worldwide endemic disease affecting thousands of people. As is excreted mainly through the renal system, and arsenic has toxic effects on the kidneys, but the mechanism has not been elucidated. In this study, the molecular basis of arsenic's nephrotoxicity was studied by using a high-throughput proteomics technique. METHODS: Eight SD (Sprague-Dawley) rats, half male and half female, were fed an As diet containing 50 mg/kg NaAsO2. Age- and sex-matched rats fed with regular chow were used as controls. At the end of the experiment (90 days), kidney tissue samples were collected and assessed for pathological changes using hematoxylin-eosin staining. Proteomic methods were used to identify alterations in protein expression levels in kidney tissues, and bioinformatic analyses of differentially expressed proteins between arsenic-treated and control groups were performed. The expression of some representative proteins was validated by Western blot analysis. RESULTS: NaAsO2 could induce renal injury. Compared with the control group, 112 proteins were up-regulated, and 46 proteins were down-regulated in the arsenic-treated group. These proteins were associated with the electron transport chain, oxidative phosphorylation, mitochondrial membrane, apoptosis, and proximal tubules, suggesting that the mechanisms associated with them were related to arsenic-induced kidney injury and nephrotoxicity. The expressions of Atp6v1f, Cycs and Ndufs1 were verified, consistent with the results of omics. CONCLUSION: These results provide important evidence for arsenic-induced kidney injury and provide new insights into the molecular mechanism of arsenic-induced kidney injury.

Dual-Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device.

Simultaneous implementation of photodetector and neuromorphic vision sensor (NVS) on a single device faces a great challenge, due to the inherent speed discrepancy in their photoresponse characteristics. In this work, a trench-bridged GaN/Ga2 O3 /GaN back-to-back double heterojunction array device is fabricated to enable the advanced functionalities of both devices on a single device. Interestingly, the device shows fast photoresponse and persistent photoconductivity behavior at low and high voltages, respectively, through the modulation of oxygen vacancy ionization and de-ionization processes in Ga2 O3 . Consequently, the role of the optoelectronic device can be altered between the photodetector and NVS by simply adjusting the magnitude of bias voltage. As a photodetector, the device is able to realize fast optical imaging and optical communication functions. On the other hand, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre-processing as an NVS. The utilization of NVS for image pre-processing leads to a noticeable enhancement in both recognition accuracy and efficiency. The results presented in this work not only offer a new avenue to obtain complex functionality on a single optoelectronic device but also provide opportunities to implement advanced robotic vision systems and neuromorphic computing.

Effects of arsenic exposure on trace element levels in the hippocampus and cortex of rats and their gender differences.

BACKGROUND: Exposure to arsenic (As) is a major public health challenge worldwide. Chronic exposure to As can cause various human health effects, including skin diseases, cardiovascular disease, neurological disorders, and cancer. Studies have shown that As exposure can lead to disturbances in the balance of trace elements in the body. Moreover, As readily crosses the blood-brain barrier and can be enriched in the hippocampus and cortex, causing neurotoxic damage. At present, there are few reports on the effect of As on trace element levels in the central nervous system (CNS). Therefore, we sought to explore As-induced neurotoxicity and the effects of As on CNS trace element levels. METHODS: An As-induced neurological injury model in rats was established by feeding As chow for 90 days of continuous exposure, and 19 elements were detected in the hippocampus and cortex of As-exposed rats by inductively coupled plasma mass spectrometry. RESULTS: The results showed that the As levels in the hippocampus and cortex of As-exposed rats were significantly higher than those in the control group, The As levels in the cortex were significantly higher than in the hippocampus group. The levels of Cd, Ho, and Rb were increased in the hippocampus and decreased in Au, Ba, Ce, Cs, Pd, Se, Sr, and Tl in the As-exposed group, while the levels of Cd and Rb were increased and Se and Au were decreased in the cortex. Significant gender differences in the effects of As on hippocampal Cd, Ba, Rb, and Sr, and cortical Cd and Mo. CONCLUSION: It is suggested that elemental imbalance may be a risk factor for developing As toxicity plays a synergistic or antagonistic role in As-induced toxicity and is closely related to As-induced CNS damage.

Proteomic Study on the Mechanism of Arsenic Neurotoxicity in the Rat Cerebral Cortex and the Protective Mechanism of Dictyophora Polysaccharides against Arsenic Neurotoxicity.

Arsenic (As) is a toxic element, and long-term exposure to As can cause neurotoxicity. The bioactive natural compound Dictyophora polysaccharide (DIP) from edible plants has been reported to reduce the toxicity of As. In this study, As poisoning was simulated by feeding As-containing feed, followed by proteomic analysis after one month of DIP treatment. The proteomic analysis showed that 145, 276, and 97 proteins were differentially expressed between the As-treated rats and control rats (As/Ctrl group), DIP-treated + As-treated and As-treated rats (DIP + As/As group), and DIP + As and control rats (DIP + As/Ctrl group), respectively. The differentially expressed proteins (DEPs) in the As/Ctrl and DIP + As/Ctrl groups were mainly related to apoptosis, synapses, energy metabolism, nervous system development, and mitochondria. After DIP treatment, the expression of the dysregulated proteins in the As/Ctrl group was restored or reversed, and 12 of them were reversed proteins. These results suggest that energy metabolism disorder, apoptosis, mitochondrial dysfunction, nervous system development injury, synaptic dysfunction, and oxidative stress may be the key pathological mechanisms of As-induced nerve injury in rats. DIP can restore or reverse the expression of related proteins, which may be the main mechanism of its intervention in As poisoning.

The use of data independent acquisition based proteomic analysis and machine learning to reveal potential biomarkers for autism spectrum disorder.

Autism spectrum disorder (ASD) is a complex neurological developmental disorder in children, and is associated with social isolation and restricted interests. The etiology of this disorder is still unknown. There is neither any confirmed laboratory test nor any effective therapeutic strategy to diagnose or cure it. We performed data independent acquisition (DIA) and multiple reaction monitoring (MRM) analysis of plasma from children with ASD and controls. The result showed that 45 differentially expressed proteins (DEPs) were identified between autistic subjects and controls. Among these, only one DEP was down-regulated in ASD; other DEPs were up-regulated in ASD children's plasma. These proteins are found associated with complement and coagulation cascades, vitamin digestion and absorption, cholesterol metabolism, platelet degranulation, selenium micronutrient network, extracellular matrix organization and inflammatory pathway, which have been reported to be related to ASD. After MRM verification, five key proteins in complement pathway (PLG, SERPINC1, and A2M) and inflammatory pathway (CD5L, ATRN, SERPINC1, and A2M) were confirmed to be significantly up-regulated in ASD group. Through the screening of machine learning model and MRM verification, we found that two proteins (biotinidase and carbonic anhydrase 1) can be used as early diagnostic markers of ASD (AUC = 0.8, p = 0.0001). SIGNIFICANCE: ASD is the fastest growing neurodevelopmental disorder in the world and has become a major public health problem worldwide. Its prevalence has been steadily increasing, with a global prevalence rate of 1%. Early diagnosis and intervention can achieve better prognosis. In this study, data independent acquisition (DIA) and multiple reaction monitoring (MRM) analysis was applied to analyze the plasma proteome of ASD patients (31 (±5) months old), and 378 proteins were quantified. 45 differentially expressed proteins (DEPs) were identified between the ASD group and the control group. They mainly were associated with platelet degranulation, ECM proteoglycar, complement and coagulation cascades, selenium micronutrient network, regulation of insulin-like growth factor (IGF) transport and uptake by insulin-like growth factor binding proteins (IGFBPs), cholesterol metabolism, vitamin metabolism, and inflammatory pathway. Through the integrated machine learning methods and the MRM verification of independent samples, it is considered that biotinidase and carbon anhydrase 1 have the potential to become biomarkers for the early diagnosis of ASD. These results complement proteomics database of the ASD patients, broaden our understanding of ASD, and provide a panel of biomarkers for the early diagnosis of ASD.

Study on the Mechanism of Arsenic-Induced Lung Injury Based on SWATH Proteomics Technology.

Chronic arsenic poisoning is a global health problem that affects millions of people, and studies have found that long-term ingestion of arsenic-containing compounds can lead to lung damage, but the exact mechanism is unknown. In this study, Sprague-Dawley (SD) rats were used as the research object, and the proteomic analysis method based on sequential window acquisition of all theoretical fragment ions (SWATH) was used to detect the changes in the expression levels of related proteins in the lung tissue of arsenic-exposed rats, and to explore the mechanism of arsenic compound-induced lung injury. The results showed that arsenic exposure resulted in the abnormal expression of collagen type III and proteins involved in metabolic, immune, and cellular processes, leading to the dysfunction of important pathways associated with these proteins, resulting in lung injury. It suggested that the underlying mechanism of arsenic-induced lung injury may be related to oxidative stress, immune injury, cell junction, and collagen type III. This result provides a new research idea for revealing the mechanism of lung injury caused by arsenic exposure.

Investigating the Neurotoxic Impacts of Arsenic and the Neuroprotective Effects of Dictyophora Polysaccharide Using SWATH-MS-Based Proteomics.

Arsenic (As) is one of the most important toxic elements in the natural environment. Currently, although the assessment of the potential health risks of chronic arsenic poisoning has received great attention, the research on the effects of arsenic on the brain is still limited. It has been reported that dictyophora polysaccharide (DIP), a common bioactive natural compound found in dietary plants, could reduce arsenic toxicity. Following behavioral research, comparative proteomics was performed to explore the molecular mechanism of arsenic toxicity to the hippocampi of SD (Sprague Dawley) rats and the protective effect of DIP. The results showed that exposure to arsenic impaired the spatial learning and memory ability of SD rats, while DIP treatment improved both the arsenic-exposed rats. Proteomic analysis showed that arsenic exposure dysregulated the expression of energy metabolism, apoptosis, synapse, neuron, and mitochondria related proteins in the hippocampi of arsenic-exposed rats. However, DIP treatment reversed or restored the expression levels of these proteins, thereby improving the spatial learning and memory ability of arsenic-exposed rats. This study is the first to use high-throughput proteomics to reveal the mechanism of arsenic neurotoxicity in rats as well as the protective mechanism of DIP against arsenic neurotoxicity.

NH4F-Induced Morphology Control of CoP Nanostructures to Enhance the Hydrogen Evolution Reaction.

Developing non-noble metal catalysts with superior catalytic activity and excellent durability is critically essential to promote electrochemical water splitting for hydrogen production. Morphology control as a promising and effective strategy is widely implemented to change the surface atomic coordination and thus enhance the intrinsic catalytic performance of current electrocatalysts. Herein, a series of cobalt phosphide (CoP) electrocatalysts with tunable morphologies of nanosheets, nanowires, nanorods, and nanoblocks have been prepared for the enhanced hydrogen evolution reaction (HER) by only adjusting the amount of ammonium fluoride (NH4F) in the hydrothermal process. Benefiting from the large active area, high surface activity, and favorable ion and gas diffusion channels, the clustered CoP nanorods obtained at a concentration of 0.15 M NH4F show the best HER performance with only an overpotential of 71 mV at a current density of 10 mA cm-2 and a low Tafel slope of 60.75 mV dec-1 in 1 M KOH. After 3000 CV cycles and 24 h durability tests, there is only a very slight degradation of performance owing to its outstanding stability and robust substrate adhesion.

Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse.

Molybdenum disulfide (MoS2) as a typical two-dimensional (2D) transition-metal dichalcogenide exhibits great potential applications for the next-generation nanoelectronics such as photodetectors. However, most MoS2-based photodetectors hold obvious disadvantages including a narrow spectral response in the visible region, poor photoresponsivity, and slow response speed. Here, for the first time, we report the design of a two-dimensional MoS2/GaN van der Waals (vdWs) heterostructure photodetector consisting of few-layer p-type MoS2 and very thin n-type GaN flakes. Thanks to the good crystal quality of the 2D-GaN flake and the built-in electric field in the interface depletion region of the MoS2/GaN p-n junction, photogenerated carriers can be rapidly separated and more excitons are collected by electrodes toward the high photoresponsivity of 328 A/W and a fast response time of 400 ms under the illumination of 532 nm light, which is seven times faster than pristine MoS2 flake. Additionally, the response spectrum of the photodetector is also broadened to the UV region with a high photoresponsivity of 27.1 A/W and a fast response time of 300 ms after integrating with the 2D-GaN flake, exhibiting an advantageous synergetic effect. These excellent performances render MoS2/GaN vdWs heterostructure photodetectors as promising and competitive candidates for next-generation optoelectronic devices.

Investigation of catalyst-assisted growth of nonpolar GaN nanowires via a modified HVPE process.

The growth of nonpolar GaN nanowires along the [101[combining macron]0] orientation has been demonstrated via a modified hydride vapor phase epitaxy (HVPE) process using GaCl3 and NH3 as precursors. The morphology and structure evolution as a dependence of the growth parameters was thoroughly studied to elucidate the nucleation and crystallization of nonpolar GaN nanowires. It has been found that the V/III ratio and temperature are critically important for the formation of high-quality nonpolar GaN nanowires. The existence of a cubic GaN (c-GaN) transition layer between the Au catalyst and hexagonal GaN (h-GaN) nonpolar nanowires was demonstrated by high-resolution transmission electron microscopy (HRTEM) characterization, which plays an important role in the initial nucleation of nonpolar GaN nanowires and the formation of stacking faults (SFs) in the GaN nanowires grown at lower temperature. Optical investigations show that the defect-related visible emission of nonpolar GaN nanowires is closely related to the growth process and can be selectively tailored. The synthetic strategy using GaCl3 as the Ga precursor to study the vapor phase epitaxy process in this work will provide a simple and efficient approach to obtain nonpolar GaN nanowires and will thus pave a solid way for fundamental research on high-quality nonpolar GaN nanowires in optoelectronic nanodevices.

Band-Gap Tunable 2D Hexagonal (GaN)1-x(ZnO)x Solid-Solution Nanosheets for Photocatalytic Water Splitting.

A (GaN)1-x(ZnO)x solid solution as a promising visible-light-driven photocatalyst for overall water splitting has attracted extensive attention. In this work, we proposed a template reactive strategy toward the synthesis of band-gap tunable 2D (GaN)1-x(ZnO)x nanosheets as thin as 14 nm to reduce the carrier transportation path and thus efficiently decrease the recombination of electrons and holes. It is demonstrated that the template strategy enables an ideal morphology and structure transformation from hexagonal 2D ZnGa2O4 nanosheets to 2D (GaN)1-x(ZnO)x nanosheets in the nitridation process. After the modification of 1 wt % of Rh cocatalyst, the flowerlike (GaN)0.89(ZnO)0.11 nanosheets show an enhanced hydrogen evolution in pure water (pH 4.5).

Simultaneous detection of trace Ag(I) and Cu(II) ions using homoepitaxially grown GaN micropillar electrode.

Driven by the motivation to quantitively control and monitor trace metal ions in water, the development of environmental-friendly electrodes with superior detection sensitivity is extremely important. In this work, we report the design of a stable, ultrasensitive and biocompatible electrode for the detection of trace Ag+ and Cu2+ ions by growing n-type GaN micropillars on conductive p-type GaN substrate. The electrochemical measurement based on cyclic voltammetry indicates that the GaN micropillars exhibit quasi-reversible and mass-controlled reaction in redox probe solution. In the application of trace Ag+ and Cu2+ determination, the GaN micropillars show superior sensitivity and excellent conductivity by presenting a detection limit of 3.3 ppb for Ag+ and 3.3 ppb for Cu2+. Comparative studies on the electrochemical response of GaN micropillars and GaN film in the simultaneous Ag+ and Cu2+ detection reveal that GaN micropillars show three orders of magnitude higher stripping peak current than GaN film. It is assumed that the microarray morphology with large active area and the hydrophilia nature of GaN micropillars are responsible for the excellent sensitivity. This work will open up some opportunities for GaN nanostructure electrodes in the application of trace metal ions detection.

Cu3P-Ni2P Hybrid Hexagonal Nanosheet Arrays for Efficient Hydrogen Evolution Reaction in Alkaline Solution.

The development of efficient and low-cost hydrogen evolution reaction electrocatalysts has been regarded as a promising approach to produce sustainable and clean fuels to solve the energy crisis and environmental problems. Herein, 3D hybrid Cu3P-Ni2P hexagonal nanosheet arrays are successfully prepared on nickel foam (Cu3P-Ni2P/NF). Benefiting from synergistic effects and strong chemical coupling existing at the interface, the Cu3P-Ni2P/NF electrode exhibits a low overpotential of 103 mV at a current density of 10 mA cm-2, which is 47 and 100 mV less than that for Ni2P/NF and Cu3P/NF, respectively. It also shows excellent electrochemical durability for long-term reaction in alkaline medium. The excellent electrocatalytic activity makes the Cu3P-Ni2P/NF as a promising cathode toward efficient hydrogen evolution via electrochemical water splitting.

High-Performance Flexible Ultraviolet Photodetectors Based on AZO/ZnO/PVK/PEDOT:PSS Heterostructures Integrated on Human Hair.

Flexible optoelectronics is an emerging research field that has attracted a great deal of interest in recent years due to the special functions and potential applications of these devices in flexible image sensors, optical computing, energy conversion devices, the Internet of Things, and other technologies. Here, we examine the high-performance ultraviolet (UV) photodetectors using AZO/ZnO nanorods/PVK/PEDOT:PSS heterostructures integrated on human hair. Due to the precise interfacial energy-level alignment among all layers and superior mechanical characteristics of human hair, the as-obtained photodetector shows a fast response time, high photoresponsivity, and excellent flexibility. According to integrate 7 heterostructures as 7 display pixels, the flexible UV-image sensor has superior device performance and outstanding flexibility and can produce vivid and accurate images of Arabic numerals from 0 to 9. Different combinations of the two heterostructures can also be used to achieve flexible photon-triggered logic functions, including AND, OR, and NAND gates. Our findings indicate the possibility of using human hair as a fiber-shaped flexible substrate and will allow the use of hair-based hierarchical heterostructures as building blocks to create exciting opportunities for next-generation high-performance, multifunctional, low-cost, and flexible optoelectronic devices.

Hydrothermal Approach to Spinel-Type 2D Metal Oxide Nanosheets.

The peculiar physical and chemical properties of 2D nanostructures have aroused global research interest in developing new members, synthetic technology, and exploring their potential applications in functional nanodevices. However, it is extremely challenging to directly obtain the 2D nanosheets for these extrinsic layered structures using conventional routines. In this work, we demonstrate the facile and general synthesis of 2D spinel-type metal oxides nanosheets through a simple hydrothermal reaction. Using this method, cubic γ-Ga2O3, ZnGa2O4 and MnGa2O4 nanosheets with triangular/hexagonal configuration and ultrathin thickness have been synthesized, and all these nanosheets show preferential growth along (111) plane with the minimum formation energy. Microstructural and composition analyses using HRTEM, EDS, XPS, and so on reveal that the as-synthesized 2D nanosheets are well-crystallized in cubic fcc-phase and show high purity in composition, and the formation process of MGa2O4 nanosheets can be regarded as the competition of M2+ and Ga3+ in tetrahedral site. Spatially resolved cathodoluminescence measurement of individual 2D nanosheet shows that the γ-Ga2O3, ZnGa2O4, and MnGa2O4 nanosheets exhibit distinct luminescence behavior, and ZnGa2O4 nanosheets show the strongest emission in visible region. It is expected that the facile synthesis of spinel-type metal oxides of γ-Ga2O3, ZnGa2O4, and MnGa2O4 nanosheets will further promote the exploration of a variety of semiconductor nanostructures that could not be achieved using conventional technology suitable for layered structures and will also open up some opportunities for the integration of advanced functional nanodevices such as photodetectors, phosphors on the basis of them.

Multi-wavelength tailoring of a ZnGa2O4 nanosheet phosphor via defect engineering.

The multi-wavelength luminescence tailoring of an individual phosphor free of external dopants is of great interest and technologically important for practical applications. Using ZnGa2O4 nanosheets as a target phosphor, we demonstrate how to artificially control the luminescence wavelength centers and their emission intensities to simultaneously emit ultraviolet/blue, green and red light via a feasible defect engineering strategy. Simple high-temperature annealing of hydrothermally synthesized ZnGa2O4 nanosheets leads to the effective tunability of their emission process to present multi-wavelength luminescence due to the structural distortion and the formation of oxygen vacancies. Controlling the annealing temperature and time can further precisely modulate the wavelengths and their corresponding intensities. It is speculated that the migration of Ga into the [GaO4] tetrahedron and the O vacancy are responsible for the multi-wavelength luminescence of the ZnGa2O4 nanosheet phosphor. Finally, the tentative multi-wavelength luminescence behavior of the ZnGa2O4 nanosheet phosphor via defect engineering is discussed based on a series of evidenced experimental observations of XRD, XPS, HRTEM and CL.

Composition and Band Gap Tailoring of Crystalline (GaN)1- x(ZnO) x Solid Solution Nanowires for Enhanced Photoelectrochemical Performance.

Photoelectrochemical water splitting has emerged as an effective artificial photosynthesis technology to generate clean energy of H2 from sunlight. The core issue in this reaction system is to develop a highly efficient photoanode with a large fraction of solar light absorption and greater active surface area. In this work, we take advantage of energy band engineering to synthesize (GaN)1- x(ZnO) x solid solution nanowires with ZnO contents ranging from 10.3% to 47.6% and corresponding band gap tailoring from 3.08 to 2.77 eV on the basis of the Au-assisted VLS mechanism. The morphology of nanowires directly grown on the conductive substrate facilitates the charge transfer and simultaneously improves the surface reaction sites. As a result, a photocurrent approximately 10 times larger than that for a conventional powder-based photoanode is obtained, which indicates the potential of (GaN)1- x(ZnO) x nanowires in the preparation of superior photoanodes for enhanced water splitting. It is anticipated that the water-splitting capability of (GaN)1- x(ZnO) x nanowire can be further increased through alignment control for enhanced visible light absorption and reduction of charge transfer resistance.

Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications.

The innovation of band-gap engineering in advanced materials caused by the alloying of different semiconductors into solid-solution nanostructures provides numerous opportunities and advantages in optoelectronic property tailoring. The semiconductor solid-solution nanostructures have multifarious emission wavelength, adjustability of absorption edge, tunable electrical resistivity, and cutting-edge photoredox capability, and these advantages can be rationalized by the assorted synthesis strategies such as, binary, ternary, and quaternary solid-solutions. In addition, the abundance of elements in groups IIB, IIIA, VA, VIA, and VIIA provides sufficient room to tailor-make the semiconductor solid-solution nanostructures with the desired properties. Recent progress of semiconductor solid-solution nanostructures including synthesis strategies, structure and composition design, band-gap engineering related to the optical and electrical properties, and their applications in different fields is comprehensively reviewed. The classification, formation principle, synthesis routes, and the advantage of semiconductor solid-solution nanostructures are systematically reviewed. Moreover, the challenges faced in this area and the future prospects are discussed. By combining the information together, it is strongly anticipated that this Review may shed new light on understanding semiconductor solid-solution nanostructures while expected to have continuous breakthroughs in band-gap engineering and advanced optoelectronic nanodevices.

Crystalline (Ni1-xCox)5TiO7 nanostructures grown in situ on a flexible metal substrate used towards efficient CO oxidation.

Severe environmental contamination and the urgent demand for a clean atmosphere require an efficient and low-cost solution to address problems such as CO emission. In this study, we report the in situ integration of non-noble (Ni1-xCox)5TiO7 nanostructures with different Co concentrations and tunable size on a flexible metal network support using a conventional PEO method; we further report their utilization for efficient CO oxidation. It was found that the Co/Ni ratios in the original electrolyte precursors directly result in the different size and morphology evolution. The (Ni1-xCox)5TiO7 nanowire arrays with x = 0.16 exhibit the best performance towards CO catalytic oxidation along with a good catalytic stability. Further analysis using XPS indicates that the CO catalytic oxidation was mainly determined by the amount of defective oxygen, lattice oxygen and surface area. The single crystal nature, large surface area, excellent CO catalytic capability and strong substrate adhesion of the (Ni1-xCox)5TiO7 nanostructures on a flexible metal substrate will open up more applications in CO oxidation ranging from processing autovehicle exhaust to chemical gas emissions in the industry.

Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.

Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.