Astragali radix (Huangqi): a time-honored nourishing herbal medicine.

Astragali radix (AR, namded Huangqi in Chinese) is the dried root of Astragalus membranaceus (Fisch.) Bge. var. mongholicus (Bge.) Hsiao or Astragalus membranaceus (Fisch.) Bge. As a widely used ethnomedicine, the biological activities of AR include immunomodulatory, anti-hyperglycemic, anti-oxidant, anti-aging, anti-inflammatory, anti-viral, anti-tumor, cardioprotective, and anti-diabetic effects, with minimum side effects. Currently, it is known that polysaccharides, saponins, and flavonoids are the indispensable components of AR. In this review, we will elaborate the research advancements of AR on ethnobotany, ethnopharmacological practices, phytochemicals, pharmacological activities, clinical uses, quality control, production developments, and toxicology. The information is expected to assist clinicians and scientists in developing useful therapeutic medicines with minimal systemic side effects.

Heavy-to-light electron transition enabling real-time spectra detection of charged particles by a biocompatible semiconductor.

The current challenge of wearable/implantable personal dosimeters for medical diagnosis and radiotherapy applications is lack of suitable detector materials possessing both excellent detection performance and biocompatibility. Here, we report a solution-grown biocompatible organic single crystalline semiconductor (OSCS), 4-Hydroxyphenylacetic acid (4HPA), achieving real-time spectral detection of charged particles with single-particle sensitivity. Along in-plane direction, two-dimensional anisotropic 4HPA exhibits a large electron drift velocity of 5 × 105 cm s-1 at "radiation-mode" while maintaining a high resistivity of (1.28 ± 0.003) × 1012 Ω·cm at "dark-mode" due to influence of dense π-π overlaps and high-energy L1 level. Therefore, 4HPA detectors exhibit the record spectra detection of charged particles among their organic counterparts, with energy resolution of 36%, (µt)e of (4.91 ± 0.07) × 10-5 cm2 V-1, and detection time down to 3 ms. These detectors also show high X-ray detection sensitivity of 16,612 µC Gyabs-1 cm-3, detection of limit of 20 nGyair s-1, and long-term stability after 690 Gyair irradiation.

High-Performance Industrial-Grade CsPbBr3 Single Crystal by Solid-Liquid Interface Engineering.

All-inorganic metal halide perovskite CsPbBr3 crystal is regarded as an attractive alternative to high purity Ge and CdZnTe for room temperature γ-ray detection. However, high γ-ray resolution is only observable in small CsPbBr3 crystal; more practical and deployable large crystal exhibits very low, and even no detection efficiency, thereby thwarting prospects for cost-effective room temperature γ-ray detection. The poor performance of large crystal is attributed to the unexpected secondary phase inclusion during crystal growth, which traps the generated carriers. Here, the solid-liquid interface during crystal growth is engineered by optimizing the temperature gradient and growth velocity. This minimizes the unfavorable formation of the secondary phase, leading to industrial-grade crystals with a diameter of 30 mm. This excellent-quality crystal exhibits remarkably high carrier mobility of 35.4 cm2 V-1 s-1 and resolves the peak of 137 Cs@ 662 keV γ-ray at an energy resolution of 9.91%. These values are the highest among previously reported large crystals.

Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding.

Doping is usually the first step to tailor thermoelectrics. It enables precise control of the charge-carrier concentration and concomitant transport properties. Doping should also turn GeSe, which features an intrinsically a low carrier concentration, into a competitive thermoelectric. Yet, elemental doping fails to improve the carrier concentration. In contrast, alloying with Ag-V-VI2 compounds causes a remarkable enhancement of thermoelectric performance. This advance is closely related to a transition in the bonding mechanism, as evidenced by sudden changes in the optical dielectric constant ε∞ , the Born effective charge, the maximum of the optical absorption ε2 (ω), and the bond-breaking behavior. These property changes are indicative of the formation of metavalent bonding (MVB), leading to an octahedral-like atomic arrangement. MVB is accompanied by a thermoelectric-favorable band structure featuring anisotropic bands with small effective masses and a large degeneracy. A quantum-mechanical map, which distinguishes different types of chemical bonding, reveals that orthorhombic GeSe employs covalent bonding, while rhombohedral and cubic GeSe utilize MVB. The transition from covalent to MVB goes along with a pronounced improvement in thermoelectric performance. The failure or success of different dopants can be explained by this concept, which redefines doping rules and provides a "treasure map" to tailor p-bonded chalcogenides.

Strong charge carrier scattering at grain boundaries of PbTe caused by the collapse of metavalent bonding.

Grain boundaries (GBs) play a significant role in controlling the transport of mass, heat and charge. To unravel the mechanisms underpinning the charge carrier scattering at GBs, correlative microscopy combined with local transport measurements is realized. For the PbTe material, the strength of carrier scattering at GBs depends on its misorientation angle. A concomitant change in the barrier height is observed, significantly increasing from low- to high-angle GBs. Atom probe tomography measurements reveal a disruption of metavalent bonding (MVB) at the dislocation cores of low-angle GBs, as evidenced by the abrupt change in bond-rupture behavior. In contrast, MVB is completely destroyed at high-angle GBs, presumably due to the increased Peierls distortion. The collapse of MVB is accompanied by a breakdown of the dielectric screening, which explains the enlarged GB barrier height. These findings correlate charge carrier scattering with bonding locally, promising new avenues for the design of advanced functional materials.

Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n-Type PbSe Rivalling PbTe.

Realizing high average thermoelectric figure of merit (ZTave ) and power factor (PFave ) has been the utmost task in thermoelectrics. Here the new strategy to independently improve constituent factors in ZT is reported, giving exceptionally high ZTave and PFave in n-type PbSe. The nonstoichiometric, alloyed composition and resulting defect structures in new Pb1+ x Se0.8 Te0.2 (x = 0-0.125) system is key to this achievement. First, incorporating excess Pb unusually increases carrier mobility (µH ) and concentration (nH ) simultaneously in contrast to the general physics rule, thereby raising electrical conductivity (σ). Second, modifying charge scattering mechanism by the authors' synthesis process boosts a magnitude of Seebeck coefficient (S) above theoretical expectations. Detouring the innate inverse proportionality between nH and µH ; and σ and S enables independent control over them and change the typical trend of PF to temperature, giving remarkably high PFave ≈20 µW cm-1 K-2 from 300 to 823 K. The dual incorporation of Te and excess Pb generates unusual antisite Pb at the anionic site and displaced Pb from the ideal position, consequently suppressing lattice thermal conductivity. The best composition exhibits a ZTave of ≈1.2 from 400 to 823 K, one of the highest reported for all n-type PbQ (Q = chalcogens) materials.

Polycrystalline SnSe with a thermoelectric figure of merit greater than the single crystal.

Thermoelectric materials generate electric energy from waste heat, with conversion efficiency governed by the dimensionless figure of merit, ZT. Single-crystal tin selenide (SnSe) was discovered to exhibit a high ZT of roughly 2.2-2.6 at 913 K, but more practical and deployable polycrystal versions of the same compound suffer from much poorer overall ZT, thereby thwarting prospects for cost-effective lead-free thermoelectrics. The poor polycrystal bulk performance is attributed to traces of tin oxides covering the surface of SnSe powders, which increases thermal conductivity, reduces electrical conductivity and thereby reduces ZT. Here, we report that hole-doped SnSe polycrystalline samples with reagents carefully purified and tin oxides removed exhibit an ZT of roughly 3.1 at 783 K. Its lattice thermal conductivity is ultralow at roughly 0.07 W m-1 K-1 at 783 K, lower than the single crystals. The path to ultrahigh thermoelectric performance in polycrystalline samples is the proper removal of the deleterious thermally conductive oxides from the surface of SnSe grains. These results could open an era of high-performance practical thermoelectrics from this high-performance material.

Exceptionally High Average Power Factor and Thermoelectric Figure of Merit in n-type PbSe by the Dual Incorporation of Cu and Te.

Thermoelectric materials with high average power factor and thermoelectric figure of merit (ZT) has been a sought-after goal. Here, we report new n-type thermoelectric system CuxPbSe0.99Te0.01 (x = 0.0025, 0.004, and 0.005) exhibiting record-high average ZT ∼ 1.3 over 400-773 K ever reported for n-type polycrystalline materials including the state-of-the-art PbTe. We concurrently alloy Te to the PbSe lattice and introduce excess Cu to its interstitial voids. Their resulting strong attraction facilitates charge transfer from Cu atoms to the crystal matrix significantly. It follows the increased carrier concentration without damaging its mobility and the consequently improved electrical conductivity. This interaction also increases effective mass of electron in the conduction band according to DFT calculations, thereby raising the magnitude of Seebeck coefficient without diminishing electrical conductivity. Resultantly, Cu0.005PbSe0.99Te0.01 attains an exceptionally high average power factor of ∼27 µW cm-1 K-2 from 400 to 773 K with a maximum of ∼30 µW cm-1 K-2 at 300 K, the highest among all n- and p-type PbSe-based materials. Its ∼23 µW cm-1 K-2 at 773 K is even higher than ∼21 µW cm-1 K-2 of the state-of-the-art n-type PbTe. Interstitial Cu atoms induce the formation of coherent nanostructures. They are highly mobile, displacing Pb atoms from the ideal octahedral center and severely distorting the local microstructure. This significantly depresses lattice thermal conductivity to ∼0.2 Wm-1 K-1 at 773 K below the theoretical lower bound. The multiple effects of the dual incorporation of Cu and Te synergistically boosts a ZT of Cu0.005PbSe0.99Te0.01 to ∼1.7 at 773 K.

Design of Domain Structure and Realization of Ultralow Thermal Conductivity for Record-High Thermoelectric Performance in Chalcopyrite.

Chalcopyrite compound CuGaTe2 is the focus of much research interest due to its high power factor. However, its high intrinsic lattice thermal conductivity seriously impedes the promotion of its thermoelectric performance. Here, it is shown that through alloying of isoelectronic elements In and Ag in CuGaTe2 , a quinary alloy compound system Cu1- x Agx Ga0.4 In0.6 Te2 (0 ≤ x ≤ 0.4) with complex nanosized strain domain structure is prepared. Due to strong phonon scattering mainly by this domain structure, thermal conductivity (at 300 K) drops from 6.1 W m-1 K-1 for the host compound to 1.5 W m-1 K-1 for the sample with x = 0.4. As a result, the optimized chalcopyrite sample Cu0.7 Ag0.3 Ga0.4 In0.6 Te2 presents an outstanding performance, with record-high figure of merit (ZT) reaching 1.64 (at 873 K) and average ZT reaching 0.73 (between ≈300 and 873 K), which are ≈37 and ≈35% larger than the corresponding values for pristine CuGaTe2 , respectively, demonstrating that such domain structure arising from isoelectronic multielement alloying in chalcopyrite compound can effectively suppress its thermal conductivity and elevate its thermoelectric performance remarkably.

Ultrahigh Power Factor and Electron Mobility in n-Type Bi2Te3-x%Cu Stabilized under Excess Te Condition.

The thermoelectric (TE) community has mainly focused on improving the figure of merit (ZT) of materials. However, the output power of TE devices directly depends on the power factor (PF) rather than ZT. Effective strategies of enhancing PF have been elusive for Bi2Te3-based compounds, which are efficient thermoelectrics operating near ambient temperature. Here, we report ultrahigh carrier mobility of ∼467 cm2 V-1 s-1 and power factor of ∼45 µW cm-1 K-2 in a new n-type Bi2Te3 system with nominal composition CuxBi2Te3.17 (x = 0.02, 0.04, and 0.06). It is obtained by reacting Bi2Te3 with surplus Cu and Te and subsequently pressing powder products by spark plasma sintering (SPS). The SPS discharges excess Te but stabilizes the high extent of Cu in the structure, giving unique SPS CuxBi2Te3.17 samples. The analyzed composition is close to "CuxBi2Te3". Their charge transport properties are highly unusual. Hall carrier concentration and mobility simultaneously increase with the higher mole fraction of Cu contrary to the typical carrier scattering mechanism. As a consequence, the electrical conductivity is considerably enhanced with Cu incorporation. The Seebeck coefficient is nearly unchanged by the increasing Cu content in contrast to the general understanding of inverse relationship between electrical conductivity and Seebeck coefficient. These effects synergistically lead to a record high power factor among all polycrystalline n-type Bi2Te3-based materials.

High Thermoelectric Performance in n-Type Polycrystalline SnSe via Dual Incorporation of Cl and PbSe and Dense Nanostructures.

Despite extensive studies on emerging thermoelectric material SnSe, its n-type form is largely underdeveloped mainly due to the difficulty in stabilizing the carrier concentration at the optimal level. Here, we dually introduce Cl and PbSe to induce n-type conduction in intrinsic p-type SnSe. PbSe alloying enhances the power factor and suppresses lattice thermal conductivity at the same time, giving a highest thermoelectric figure of merit ZT of 1.2 at 823 K for n-type polycrystalline SnSe materials. The best composition is Sn0.90Pb0.15Se0.95Cl0.05. Samples prepared by the solid-state reaction show a high maximum ZT ( ZTmax) ∼1.1 and ∼0.8 parallel and perpendicular to the press direction of spark plasma sintering, respectively. Remarkably, post-ball milling and annealing processes considerably reduce structural anisotropy, thereby leading to a ZTmax ∼1.2 along both the directions. Hence, the direction giving a ZTmax is controllable for this system using the specialized preparation methods for specimens. Spherical aberration-corrected scanning transmission electron microscopic analyses reveal the presence of heavily dense edge dislocations and strain fields, not observed in the p-type counterparts, which contribute to decreasing lattice thermal conductivity. Our theoretical calculations employing a Callaway-Debye model support the experimental results for thermal transport and microscopic structures.

High-Performance n-Type PbSe-Cu2Se Thermoelectrics through Conduction Band Engineering and Phonon Softening.

From a structural and economic perspective, tellurium-free PbSe can be an attractive alternative to its more expensive isostructural analogue of PbTe for intermediate temperature power generation. Here we report that PbSe0.998Br0.002-2%Cu2Se exhibits record high peak ZT 1.8 at 723 K and average ZT 1.1 between 300 and 823 K to date for all previously reported n- and p-type PbSe-based materials as well as tellurium-free n-type polycrystalline materials. These even rival the highest reported values for n-type PbTe-based materials. Cu2Se doping not only enhance charge transport properties but also depress thermal conductivity of n-type PbSe. It flattens the edge of the conduction band of PbSe, increases the effective mass of charge carriers, and enlarges the energy band gap, which collectively improve the Seebeck coefficient markedly. This is the first example of manipulating the electronic conduction band to enhance the thermoelectric properties of n-type PbSe. Concurrently, Cu2Se increases the carrier concentration with nearly no loss in carrier mobility, even increasing the electrical conductivity above ∼423 K. The resulting power factor is ultrahigh, reaching ∼21-26 µW cm-1 K-2 over a wide range of temperature from ∼423 to 723 K. Cu2Se doping substantially reduces the lattice thermal conductivity to ∼0.4 W m-1 K-1 at 773 K, approaching its theoretical amorphous limit. According to first-principles calculations, the achieved ultralow value can be attributed to remarkable acoustic phonon softening at the low-frequency region.

Highly robust and flexible n-type thermoelectric film based on Ag2Te nanoshuttle/polyvinylidene fluoride hybrids.

Highly robust and flexible n-type thermoelectric (TE) films based on Ag2Te nanoshuttle/polyvinylidene fluoride were prepared by a solution-processable method without a surfactant. A good power performance of over 30 µW (m K2)-1 at room temperature was achieved. Moreover, the synthesized fabrics also exhibited potential for application in flexible electronic devices with negligible performance change after 1000 bending cycles.

Defect Engineering for High-Performance n-Type PbSe Thermoelectrics.

Introducing structural defects such as vacancies, nanoprecipitates, and dislocations is a proven means of reducing lattice thermal conductivity. However, these defects tend to be detrimental to carrier mobility. Consequently, the overall effects for enhancing ZT are often compromised. Indeed, developing strategies allowing for strong phonon scattering and high carrier mobility at the same time is a prime task in thermoelectrics. Here we present a high-performance thermoelectric system of Pb0.95(Sb0.033□0.017)Se1- yTe y (□ = vacancy; y = 0-0.4) embedded with unique defect architecture. Given the mean free paths of phonons and electrons, we rationally integrate multiple defects that involve point defects, vacancy-driven dense dislocations, and Te-induced nanoprecipitates with different sizes and mass fluctuations. They collectively scatter thermal phonons in a wide range of frequencies to give lattice thermal conductivity of ∼0.4 W m-1 K-1, which approaches to the amorphous limit. Remarkably, Te alloying increases a density of nanoprecipitates that affect mobility negligibly and impede phonons significantly, and it also decreases a density of dislocations that scatter both electrons and phonons heavily. As y is increased to 0.4, electron mobility is enhanced and lattice thermal conductivity is decreased simultaneously. As a result, Pb0.95(Sb0.033□0.017)Se0.6Te0.4 exhibits the highest ZT ∼ 1.5 at 823 K, which is attributed to the markedly enhanced power factor and reduced lattice thermal conductivity, in comparison with a ZT ∼ 0.9 for Pb0.95(Sb0.033□0.017)Se that contains heavy dislocations only. These results highlight the potential of defect engineering to modulate electrical and thermal transport properties independently. We also reveal the defect formation mechanisms for dislocations and nanoprecipitates embedded in Pb0.95(Sb0.033□0.017)Se0.6Te0.4 by atomic resolution spherical aberration-corrected scanning transmission electron microscopy.

Enhancing p-Type Thermoelectric Performances of Polycrystalline SnSe via Tuning Phase Transition Temperature.

SnSe emerges as a new class of thermoelectric materials since the recent discovery of an ultrahigh thermoelectric figure of merit in its single crystals. Achieving such performance in the polycrystalline counterpart is still challenging and requires fundamental understandings of its electrical and thermal transport properties as well as structural chemistry. Here we demonstrate a new strategy of improving conversion efficiency of bulk polycrystalline SnSe thermoelectrics. We show that PbSe alloying decreases the transition temperature between Pnma and Cmcm phases and thereby can serve as a means of controlling its onset temperature. Along with 1% Na doping, delicate control of the alloying fraction markedly enhances electrical conductivity by earlier initiation of bipolar conduction while reducing lattice thermal conductivity by alloy and point defect scattering simultaneously. As a result, a remarkably high peak ZT of ∼1.2 at 773 K as well as average ZT of ∼0.5 from RT to 773 K is achieved for Na0.01(Sn1-xPbx)0.99Se. Surprisingly, spherical-aberration corrected scanning transmission electron microscopic studies reveal that NaySn1-xPbxSe (0 < x ≤ 0.2; y = 0, 0.01) alloys spontaneously form nanoscale particles with a typical size of ∼5-10 nm embedded inside the bulk matrix, rather than solid solutions as previously believed. This unexpected feature results in further reduction in their lattice thermal conductivity.

Fabrication of Bi2Te3-x Se x nanowires with tunable chemical compositions and enhanced thermoelectric properties.

Uniform Bi2Te3-x Se x nanowires (NWs) with tunable components are synthesized by a modified solution method free of any template, and inter-diffusion mechanism is proposed for the growth and transformation of ternary nanowires. Spark plasma sintering is adopted to fabricate the pellets of Bi2Te3-x Se x NWs and thermoelectric transport properties are measured. As compared to Bi2Te3 pellets, Se doping results in lowered electrical conductivity because of the reduced carrier concentration, both the Seebeck coefficient and the power factor are enhanced substantially. The Bi2Te2.7Se0.3 pellet exhibits the highest power factor at room temperature as a result of optimized carrier concentration (4.37 × 1019 cm-3) and mobility (60.22 cm2 V-1 s-1). As compared to Bi2Te3, the thermal conductivity of Bi2Te3-x Se x is lowered owing to the enhanced phonon scattering by dopants and grain boundaries. As a result, the ZT value at 300 K is substantially improved from 0.045 of Bi2Te3 to 0.42 of Bi2Te2.7Se0.3. It is suggested that Se doping is an effective way to enhance the thermoelectric performance of Bi2Te3 based materials.

Morphology-Controllable Synthesis of Cobalt Telluride Branched Nanostructures on Carbon Fiber Paper as Electrocatalysts for Hydrogen Evolution Reaction.

Cobalt telluride branched nanostructures on carbon fiber paper (CFP) with two different morphologies were synthesized via solution-based conversion reaction. Both the CoTe2 with nanodendrite and CoTe with nanosheet morphologies on the CoTe2 nanotube (CoTe2 NDs/CoTe2 NTs and CoTe NSs/CoTe2 NTs) supported by CFP exhibit high activities toward hydrogen evolution reaction (HER). Particularly, the CoTe NSs/CoTe2 NTs only require an overpotential of 230.0 mV to deliver the current density of 100 mA cm(-2) in acid solution. After cycling for 5000 cycles or 20 h continual electrolysis, only a small performance loss is observed.

Nanowires as Building Blocks to Fabricate Flexible Thermoelectric Fabric: The Case of Copper Telluride Nanowires.

A general approach to fabricate nanowires based inorganic/organic composite flexible thermoelectric fabric using a simple and efficacious five-step vacuum filtration process is proposed. As an excellent example, the performance of freestanding flexible thermoelectric thin film using copper telluride nanowires/polyvinylidene fluoride (Cu1.75Te NWs/PVDF = 2:1) as building block is demonstrated. By burying the Cu1.75Te NWs into the PVDF polymer agent, the flexible fabric exhibits room-temperature Seebeck coefficient and electric conductivity of 9.6 µV/K and 2490 S/cm, respectively, resulting in a power factor of 23 µW/(mK(2)) that is comparable to the bulk counterpart. Furthermore, this NW-based flexible fabric can endure hundreds of cycles of bending tests without significant performance degradation.

[Effects of Yiqi Huayu prescription on knee cartilage degeneration in HIF-1alpha gene knockout mice].

OBJECTIVE: To study the role of hypoxia-inducible factor 1 alpha (HIF1alpha) on knee cartilage degeneration,and to explore the effects and mechanisms of Chinese herbal compound Yiqi Huayu prescription on HIF-1alpha gene knockout mice on knee cartilage degeneration. METHODS: The 4-month and 6-month HIF-1alpha gene knock out mice were obtained by interbreeding, and divided into HIF-1alpha +/+ 4-month mice group,HIF-1alpha -/- 4-month mice group,HIF-1alpha +/+ 6-month mice group and HIF-1alpha -/- 6-month mice group, 3 mice in each group. And then the 2-month-old HIF-1alpha gene knock out mice were randomly divided into Yiqi Huayu prescription group and physiological saline group. There were 6 mice in each group. After 2 months' drug administration, the knee joint of mice was collected, and the Mankin score were evaluated; Safranine-fast green staining, HE Staining, and immunohistochemistry analysis for VEGF, Col X, Col II, MMP-13 and Sox-9 were performed erespectively. RESULTS: (1) Compared to the results in the HIF-1alpha+/+ mice groups, the HIF-1alpha-/- mice developed aging related cartilage loss and bony tissue appearance, cartilage defects increased,and cells reduced. In HIF-1alpha-/-4-month mice and 6-month mice group, the expresion of Col II and Sox9 decreased, and the expression of Col X, MMP-13 and VEGF increased. (2) Compared to the physiological saline group, the ossification and defect of knee joint cartilage reduced of mice in the Yiqi Huayu prescription group, the cartilage cell distribution was more uniform, and the total number of cells increased. The expression of type II collagen and Sox9 protein increased, expression of Col X, MMP-13 and VEGF protein decreased of mice in the Yiqi Huayu prescription group. CONCLUSION: The knee cartilage degenerates in the HIF-1alpha cKO mice, and the degeneration increased with age adding. The Yiqi Huayu prescription can delay the degeneration of knee cartilage of HIF-1alpha cKO mice.

[Experimental study on lumbar intervetebral disc degeneration model with kidney deficiency by ovariectomizing].

OBJECTIVE: To observe effects of removing arms and ovarian on lumbar intervertebral disc and vertebral bone mineral density (BMD) by establishing rat model of lumbar intervetebral disc degeneration (IDD) with kidney deficiency, and to explore internal mechanism of disc degeneration, relationship between disc degeneration and osteoporosis. METHODS: Thirty Sprague-Dawley female rats aged one month were randomly divided into control group, lumbar IDD group and lumbar IDD with kidney deficiency group (combined group), 10 rats in each group. Lumbar IDD group removed double arms, lumbar IDD with kidney deficiency group removed double arms after 3 months, both ovaries were removed. Vertebral bone mineral density were observed by Micro-CT scan; morphological changes were tested by safranine O-fast green staining; II, X collagen protein expression in the intervertebral disc were obsevered by immunohistochemistry; extracellular matrix gene expression were obsevered by real-time polymerase chain reaction (RT-PCR), in order to evaluate the effects of removed of forelimbs and double ovarian on degeneration and vertebral bone mineral density of intervertebral disc. RESULTS: Micro-CT scan showed osteoporosis in kidney deficiency group was obviously worse than other two groups; safranine O-fast green staining showed that intervertebral space became narrowed, intervertebral disc tissue degenerated obviously, chondral palte was underdeveloped in kidney deficiency group; immunohistochemistry showed that X collagen expression increased, type II collagen expression decreased in kidney deficiency group; RT-PCR showed that type II collagen expression in lumbar IDD group and kidney deficiency group was lower than control group, and had statistical meaning among three groups (P=0.000, P=0.000); Age 1 in lumbar IDD group and kidney deficiency group was lower than control group, and had statistical meaning among three groups (P=0.000, P= 0.000); while type X collagen expression was higher than control group, but no significant meaning; MMP-13 in lumbar IDD group and kidney deficiency group was higher than control group, with significant meaning compared among three groups (P= 0.000, P=0.000); aggrecanase-2 in lumbar IDD group and kidney deficiency group was higher than control group, with significant meaning compared among three groups (P=0.006, P=0.008). CONCLUSION: Rats model of lumbar disc degeneration established by removed forelimbs and ovariectomized can occure "bone like"--osteoporosis, which is similar with clinical kidney lumbar disc degeneration in tissue morphology, molecular cell biology expression.