Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 20 de 20
Filtrar
Mais filtros








Base de dados
Intervalo de ano de publicação
1.
RSC Adv ; 12(26): 16677-16683, 2022 Jun 01.
Artigo em Inglês | MEDLINE | ID: mdl-35754866

RESUMO

In this work, the effects of transition metal (TM = V and Cr) adsorption on AlN monolayer electronic and magnetic properties are investigated using first-principles density functional theory (DFT) calculations. TMs prefer to be adsorbed on-top of a bridge position as indicated by the calculated adsorption energy. V adatoms induce half-metallicity, while Cr adatoms metallize the monolayer. The magnetic properties are produced mainly by the V and Cr adatoms with magnetic moments of 3.72 and 4.53 µ B, respectively. Further investigation indicates that antiferromagnetic (AFM) ordering is energetically more favorable than ferromagnetic (FM) ordering. In both cases, the AFM state is stabilized upon increasing adatom coverage. The AlN monolayer becomes an AFM semiconductor with 0.5 ML of V adatom, and metallic nature is induced with 1.0 ML. Meanwhile, the degree of metallicity increases with increasing Cr adatoms. Results reported herein may provide a feasible new approach to functionalize AlN monolayers for spintronic applications.

2.
J Phys Condens Matter ; 34(35)2022 Jun 29.
Artigo em Inglês | MEDLINE | ID: mdl-35724657

RESUMO

In this work, the structural, electronic, and magnetic properties of arsenene monolayer doped with germanium (Ge) and nitrogen (N) atoms are investigated using density functional theory calculations. Pristine monolayer is dynamically stable and it possesses a wide indirect band gap. Ge doping induces magnetic semiconductor (MS) nature generated by the semiconductor behavior in both spin channels with significant spin asymmetry around the Fermi level. The dopant produces mainly magnetic properties. Upon increasing the doping concentration, different doping configurations along armchair, zigzag edges, and hexagonal ring have been proposed. The MS nature is retained with an odd number of Ge atoms, meanwhile an eVen number leads to the disappearance of magnetism. In contrast, N doping induces a gap reduction of 11.80%, preserving the non-magnetic nature. At higher doping level, different electronic features including semiconductor, nearly semimetallic, and metallic natures are obtained depending on the doping concentration and configurations. In addition, the formation energy and cohesive energy are calculated to analyze the systems' stability. Our results show that different doping arrangements induce novel features in arsenene monolayer for applications in spintronic and optoelectronic devices.

3.
RSC Adv ; 12(16): 9828-9835, 2022 Mar 25.
Artigo em Inglês | MEDLINE | ID: mdl-35424916

RESUMO

Searching for new two-dimensional (2D) materials for the early and efficient detection and capture of toxic gas has received special attention from researchers. In this work, we investigate the adsorption of NO and CO molecules onto a silicene monolayer using first-principles calculations. Different numbers of adsorbates, as well as adsorption configurations, have been considered. The results show that up to four NO molecules can be chemically adsorbed onto the pristine monolayer with adsorption energies varying between -0.32 and -1.22 eV per molecule. In these cases, the gas adsorption induces feature-rich electronic behaviors, including magnetic semiconducting and half-metallicity, where the magnetic properties are produced mainly by the adsorbates. Except for two CO molecules adsorbing onto two adjacent Si atoms with an adsorption energy of -0.26 eV per molecule, other adsorption configurations show weak physisorption of CO molecules onto the pristine silicene platform. However, the sensitivity can be enhanced considerably by doping with Al atoms, drastically reducing the adsorption energy to between -0.19 and -0.71 eV per molecule. The doping and adsorption process may lead to either band gap opening or metallization, depending on its configuration. This study reveals the promising applicability of pristine and Al doped silicene monolayers as sensors for more than one single NO and CO molecule.

4.
J Phys Condens Matter ; 34(23)2022 Apr 08.
Artigo em Inglês | MEDLINE | ID: mdl-35276690

RESUMO

Density functional theory calculations of phonon modes predict that some compounds of the alkali metal aurides family, general formulaA2MAu6(A= K, Rb or Cs;M= Ti, Zr, Hf, Sn or Pb), have stable three-dimensional phase with a double perovskite-type structure and cubicFm3¯mspace group (K2PtCl6-type). Bader's charge analysis shows that most electron density is located within the six atoms at the octahedra vertices like double perovskite halides. However, the short spacing between Au anions enables d-orbital interactions between them. Compounds of this family, with group 4 metals only, carry conduction states around the Γ point (k= 0). On the other hand, compounds with group 14 metals possess more conduction states around all the Brillouin zone and have electron pockets in their band structures. These compounds provide further insights into the unusual anionic behavior of gold and present other alternatives for the construction of divergent nanodevices.

5.
Phys Chem Chem Phys ; 24(4): 2209-2218, 2022 Jan 26.
Artigo em Inglês | MEDLINE | ID: mdl-35013741

RESUMO

Exploration of new half-metallic materials for spintronic applications has drawn great attention from researchers. In this work, we investigate the structural, electronic, and magnetic properties of the NaMgO3 perovskite in the bulk and (001) surface conformations. The results show the half-metallic nature of bulk NaMgO3 generated by insulator spin-up channels with a large band gap of 6.08 eV and metallic spin-down channels. A total magnetic moment of 3 (µB) is obtained, which is produced mainly by O atoms with a local magnetic moment of 0.94 (µB). Once the bulk is cleaved along the (001) direction, atomic relaxation takes place to reach an equilibrium, where all constituent atoms exhibit an inward movement. Interestingly, the half-metallicity is retained from the bulk to the (001) surface conformation. The effects of slab termination and thickness on the surface energy, stability, band edges, spin-up energy gaps, and magnetic anisotropy will be also analyzed in detail. The results presented herein introduce the NaMgO3 perovskite as a promising half-metallic material to generate spin current in spintronic devices.

6.
Phys Chem Chem Phys ; 23(43): 24922-24931, 2021 Nov 10.
Artigo em Inglês | MEDLINE | ID: mdl-34726216

RESUMO

The 2D form of the BeO sheet has been successfully prepared (Hui Zhang et al., ACS Nano, 2021, 15, 2497). Motivated by these exciting experimental results on the 2D layered BeO structure, we studied the effect of the adsorption of B atoms on BeO (B@BeO) and substitutional B atoms (B-BeO) at the Be site at different B concentrations. We investigated the structural stability and the mechanical, electronic, magnetic, and optical properties of the mentioned structures using first-principles calculations. We found out that hexagonal BeO monolayers with adsorbed and dopant B atoms have different mechanical stabilities at different concentrations. B@BeO and B-BeO monolayers are brittle structures, and B@BeO structures are more rigid than B-BeO monolayers (at the same B concentration). The adsorption and the formation energy per B atom decrease as the B concentration increases. In comparison, the work function increases when increasing the B concentration. The work function of B@BeO is higher than the corresponding value of B-BeO (at the same B concentration). The magnetic moment linearly increases as the B concentration increases. BeO is a semiconductor with an indirect bandgap of 5.3 eV. The B@BeO and B-BeO structures are semiconductors, except for 3B-BeO (14.2% doped concentration), which is a metal. The bandgap is 1.25 eV for most of the adsorbed atom concentrations. For B-BeO, the bandgap decreases to zero at a concentration of 14.2%. The bandgap of the B-BeO monolayer at different B concentrations is smaller than the corresponding values of the B@BeO monolayer, which indicates that B substitutional doping has a greater effect on the electronic structure of the BeO monolayer than B adsorption doping. We investigated the optical properties, including the dielectric function and absorption coefficient. The results indicate good optical absorption in the range of infrared and ultraviolet energies for the B adsorbed and doped BeO monolayer.

7.
Phys Chem Chem Phys ; 23(45): 25866-25876, 2021 Nov 24.
Artigo em Inglês | MEDLINE | ID: mdl-34766178

RESUMO

Recent developments in the synthesis of highly crystalline ultrathin BiTeX (X = Br, Cl) structures [Debarati Hajra et al., ACS Nano 14, 15626 (2020)] have led to the exploration of the atomic structure, dynamical stability, and electronic, optical, and thermoelectric properties of SbXY (X = Se, Te; Y = Br, I) monolayers via density functional calculations. The calculated phonon spectrum, elastic stability conditions, and cohesive energy verified the stability of the studied SbXY monolayers. The mechanical properties reveal that all studied monolayers are stable and brittle. Based on PBE (PBE + SOC) functional calculations, the SbXY monolayers are semiconductors with indirect bandgaps. The calculated bandgaps using HSE (HSE + SOC) for SbSeBr, SbSeI, SbTeBr, and SbTeI monolayers are between 1.45 and 1.91 eV, which are appealing for applications in nanoelectronic devices. The signature of the Rashba effect appears in the SbXY monolayer. The SbXY monolayers are visible-light active. Hole doping can be an efficient way to increase the electricity production of SbXY monolayers from waste heat energy. This study suggests that SbXY (X = Se, Te; Y = Br, I) monolayers represent promising new electronic, optical, and energy conversion systems.

8.
Sci Rep ; 11(1): 21061, 2021 Oct 26.
Artigo em Inglês | MEDLINE | ID: mdl-34702822

RESUMO

Asymmetric Janus transition metal dichalcogenide MoSSe is a promising catalytic material due to the intrinsic in-plane dipole of its opposite faces. The atomic description of the structures observed by experimental techniques is relevant to tuning and optimizing its surface reaction processes. Furthermore, the experimentally observed triangular morphologies in MoSSe suggest that an analysis of the chemical environment of its edges is vital to understand its reactivity. Here we analyze the size-shape stability among different triangular structures-quantum- dots proposed from the ideal S(-1010) and Mo(10-10) terminations. Our stability analysis evidenced that the S-Se termination is more stable than Mo; moreover, as the size of the quantum dot increases, its stability increases as well. Besides, a trend is observed, with the appearance of elongated Mo-S/Se bonds at symmetric positions of the edges. Tersoff-Hamann scanning tunneling microscopy images for both faces of the stablest models are presented. Electrostatic potential isosurfaces denote that the basal plane on the S face of both configurations remains the region with more electron density concentration. These results point toward the differentiated activity over both faces. Finally, our study denotes the exact atomic arrangement on the edges of MoSSe quantum dots corresponding with the formation of S/Se dimers who decorates the edges and their role along with the faces as catalytic sites.

9.
Phys Chem Chem Phys ; 23(28): 15216-15223, 2021 Jul 21.
Artigo em Inglês | MEDLINE | ID: mdl-34235514

RESUMO

Motivated by the recent successful synthesis of highly crystalline ultrathin BiTeCl and BiTeBr layered sheets [Debarati Hajra et al., ACS Nano, 2020, 14, 15626], herein for the first time, we carry out a comprehensive study on the structural and electronic properties of BiTeCl and BiTeBr Janus monolayers using density functional theory (DFT) calculations. Different structural and electronic parameters including the lattice constant, bond lengths, layer thickness in the z-direction, different interatomic angles, work function, charge density difference, cohesive energy and Rashba coefficients are determined to acquire a deep understanding of these monolayers. The calculations show good stability of the studied single layers. BiTeCl and BiTeBr monolayers are semiconductors with electronic bandgaps of 0.83 and 0.80 eV, respectively. The results also show that the semiconductor-metal transformation can be induced by increasing the number of layers. In addition, the engineering of the electronic structure is also studied by applying an electric field, and mechanical uniaxial and biaxial strain. The results show a significant change of the bandgaps and that an indirect-direct band-gap transition can be induced. This study highlights the positive prospect for the application of BiTeCl and BiTeBr layered sheets in novel electronic and energy conversion systems.

10.
J Phys Condens Matter ; 33(32)2021 Jun 24.
Artigo em Inglês | MEDLINE | ID: mdl-34082415

RESUMO

In practice, modifying the fundamental properties of low-dimensional materials should be realized before incorporating them into nanoscale devices. In this paper, we systematically investigate the nitrogen (N) doping and oxygen vacancy (OV) effects on the electronic and magnetic properties of the beryllium oxide (BeO) monolayer using first-principles calculations. Pristine BeO single layer is a non-magnetic insulator with an indirectK-Γ gap of 5.300 eV. N doping induces a magnetic semiconductor nature, where the spin-up and spin-down band gaps depend on the dopant concentration and N-N separation. Creating one OV leads to the energy gap reduction of 31.06% with no spin-polarization, which is due to the abundant 2p electrons of the Be atoms nearest the OV site. The further increase to two OVs and varying the OV-OV distance affect the band gap values, however the spin independence is retained. The magnetic semiconducting behavior is also obtained by the simultaneous N doping and OV presence. Calculations reveal significant magnetization of the BeO@1N, BeO@2N-n, BeO@NOV-nsystems, which is produced mainly by the spin-up N-2p state. Except for the BeO@NOV-1 and BeO@NOV-2, whose magnetic properties are created by the spin-up 2p state of the Be atoms closest to the OV site. The variation of the N-N and N-OV distances keeps the ferromagnetic ordering in the BeO@2N and BeO@NOV layers. Results presented herein may propose efficient methods to artificially modify the physical properties of BeO monolayer, leading to the formation of novel two-dimensional (2D) materials for optoelectronic and spintronic applications.

11.
Phys Chem Chem Phys ; 23(21): 12226-12232, 2021 Jun 02.
Artigo em Inglês | MEDLINE | ID: mdl-34009225

RESUMO

Pure hydrogen production via water splitting is an ideal strategy for producing clean and sustainable energy. Two-dimensional (2D) cadmium chalcogenide single-layers with a tetragonal crystal structure, namely Tetra-CdX (X = S, Se, and Te) monolayers, are theoretically predicted by means of density functional theory (DFT). Their structural stability and electronic and optical properties are investigated. We find that Tetra-CdX single-layers are thermodynamically stable. Their stability decreases as we go down the 6A group in the periodic table, i.e., from X = S to Se, and Te which also means that the electronegativity decreases. All considered novel monolayers are indirect band gap semiconductors. Using the HSE06 functional the electronic band gaps of CdS, CdSe, and CdTe monolayers are predicted to be 3.10 eV, 2.97 eV, and 2.90 eV, respectively. The impact of mechanical strain on the physical properties was studied, which indicates that compressive strain increases the band gap and tensile strain decreases the band gap. The optical properties of the Tetra-CdX monolayers show the ability of these monolayers to absorb visible light. Due to the suitable band gaps and band edge positions of Tetra-CdX, these newly discovered 2D materials are promising for photocatalytic water splitting.

12.
RSC Adv ; 11(56): 35614-35623, 2021 Oct 28.
Artigo em Inglês | MEDLINE | ID: mdl-35493147

RESUMO

Since the successful synthesis of the MoSSe monolayer, two-dimensional (2D) Janus materials have attracted huge attention from researchers. In this work, the MoSO monolayer with tunable electronic and magnetic properties is comprehensively investigated using first-principles calculations based on density functional theory (DFT). The pristine MoSO single layer is an indirect gap semiconductor with energy gap of 1.02(1.64) eV as predicted by the PBE(HSE06) functional. This gap feature can be efficiently modified by applying external strain presenting a decrease in its value upon switching the strain from compressive to tensile. In addition, the effects of vacancies and doping at Mo, S, and O sites on the electronic structure and magnetic properties are examined. Results reveal that Mo vacancies, and Al and Ga doping yield magnetic semiconductor 2D materials, where both spin states are semiconductors with significant spin-polarization at the vicinity of the Fermi level. In contrast, single S and O vacancies induce a considerable gap reduction of 52.89% and 58.78%, respectively. Doping the MoSO single layer with F and Cl at both S and O sites will form half-metallic 2D materials, whose band structures are generated by a metallic spin-up state and direct gap semiconductor spin-down state. Consequently, MoV, MoAl, MoGa, SF, SCl, OF, and OCl are magnetic systems, and the magnetism is produced mainly by the Mo transition metal that exhibits either ferromagnetic or antiferromagnetic coupling. Our work may suggest the MoSO Janus monolayer as a prospective candidate for optoelectronic applications, as well as proposing an efficient approach to functionalize it to be employed in optoelectronic and spintronic devices.

13.
J Mol Graph Model ; 100: 107642, 2020 11.
Artigo em Inglês | MEDLINE | ID: mdl-32688130

RESUMO

It is known that high spin-polarization and magnetism can be found even in materials with neither transition metals nor rare earths. In this paper, we report results of the structural design, electronic structure, magnetic and optical properties of new equiatomic quaternary Heusler (EQH) KCaBX (X = S and Se) compounds. Electron exchangecorrelation interactions are described by the Wu-Cohen (WC) functional and Tran-Blaha modified Becke-Johnson exchange (mBJ) potential. Ferromagnetic ordering is stable for the cubic structure of space group F43 m in which the K, Ca, B and X atoms are located at 4c, 4d, 4a and 4b Wyckoff positions, respectively. Quaternaries at hand exhibit a perfect spin-polarization around the Fermi level, which is a result of the half-metallicity with metallic spin-up channel and semiconductor spin-dn channel. The ferromagnetic half-metallic and spin-flip band gaps are 2.648(2.470) and 0.673(0.526), respectively, for KCaBS(KCaBSe). Both studied compounds have a total magnetic moment of 2.000 µB. Additionally, the strain effect on the electronic and magnetic properties is also examined. Finally, the optical properties of the KCaBX alloys are investigated for energies up to 25 eV. Optical spectra show the metallic behavior at extremely low energies and semiconductor nature at higher energies. Interestingly, KCaBS and KCaBSe exhibit prospective absorption properties with a quite large absorption coefficient in the ultraviolet regime.


Assuntos
Eletrônica , Elementos de Transição , Ligas , Magnetismo , Estudos Prospectivos
14.
Phys Chem Chem Phys ; 22(27): 15354-15364, 2020 Jul 21.
Artigo em Inglês | MEDLINE | ID: mdl-32589177

RESUMO

Nonmetal doping is an effective approach to modify the electronic band structure and enhance the photocatalytic performance of bismuth oxyhalides. Using density functional theory, we systematically examine the fundamental properties of single-layer BiOBr doped with boron (B) and phosphorus (P) atoms. The stability of the doped models is investigated based on the formation energies, where the substitutional doping is found to be energetically more stable under O-rich conditions than under Bi-rich ones. The results showed that substitutional doping of P atoms reduced the bandgap of pristine BiOBr to a greater extent than that of boron substitution. The calculation of the effective masses reveals that B doping can render the electrons and holes of pristine BiOBr lighter and heavier, respectively, resulting in a slower recombination rate of photoexcited electron-hole pairs. Based on the results of HOMO-LUMO calculations, the introduction of B atoms tends to increase the number of photocatalytically active sites. The top of the valence band and the conduction band bottom of the B doped BiOBr monolayer match well with the water redox potentials in an acidic environment. The absorption spectra propose that B(P) doping causes a red-shift. Overall, the results predict that nonmetal-doped BiOBr monolayers have a reduced bandgap, a slow recombination rate, more catalytically active sites, enhanced optical absorption edges, and reduced work functions, which will contribute to superior photocatalytic performance.

15.
J Mol Graph Model ; 95: 107501, 2020 03.
Artigo em Inglês | MEDLINE | ID: mdl-31787502

RESUMO

Two dimensional monolayer semiconductors play an important role in designing opto-electronic devices for applications. In this paper, through the properties of the density functional theory, by running a series of first principles computations, the stability and the electronic properties of XI2 (X = Si, Ge, Sn, Pb) monolayer structures is investigated. Our calculations indicate that 2D SiI2, GeI2, SnI2, and PbI2 monolayer materials show good stabilities. Accessing on their electronic properties indicates that they have semiconducting nature with strain tunable indirect band gaps of 2.38, 2.80, 2.72, and 3.23 eV respectively which are obtained by functional (HSE06) level of theory. The obtained electronic properties can be effectively tuned by strain effects suggests the predicted 2D monolayer materials for application in new opto-electronic devices.


Assuntos
Chumbo , Semicondutores , Teoria da Densidade Funcional , Eletrônica
16.
RSC Adv ; 10(18): 10731-10739, 2020 Mar 11.
Artigo em Inglês | MEDLINE | ID: mdl-35492933

RESUMO

In this work, we consider the electronic and optical properties of chemically functionalized InN monolayers with F and Cl atoms (i.e., F-InN-F, F-InN-Cl, Cl-InN-F, Cl-InN-Cl monolayers) using first-principles calculations. The adsorption of the F and Cl atoms on the InN monolayer is determined to be chemically stable and the F-InN-F monolayer is most likely to occur. Our calculations show that the chemical functionalization with Cl and F atoms not only breaks the planar structure of InN monolayer but also increases its band gap. By using both Perdew, Burke, and Ernzerhof (PBE) and the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functionals, all four models of chemically functionalized InN monolayers are found to be semiconductors with direct energy gaps and these gaps depend on the constituent species. When the spin-orbit coupling (SOC) was included, the energy gap of these monolayers was reduced and an energy splitting was found at the Γ-point in the valence band. Chemically functionalized InN monolayers can absorb light in a wide region, especially the F-InN-F and Cl-InN-F monolayers have a strong ability to absorb the visible light. Our findings reveal that the chemically functionalized InN monolayers have potential applications in next-generation optoelectronic devices.

17.
RSC Adv ; 10(43): 25609-25617, 2020 Jul 03.
Artigo em Inglês | MEDLINE | ID: mdl-35518578

RESUMO

In this work, a new equiatomic quaternary Heusler (EQH) compound, MnVZrP, is predicted using first principles calculations. Simulations show the good stability of the material, suggesting experimental realization. Results show that MnVZrP is a magnetic semiconductor material, exhibiting semiconductor characteristics in both spin channels, however, with strong spin-polarization. Electronic band gaps of 0.97 and 0.47 eV are obtained in the spin-up and spin-dn states, respectively. Mainly the d-d coupling regulates the electronic band structure around the Fermi level. Strain effects on the electronic properties of the proposed compound are also investigated. Simulations give the total magnetic moment of 3 µ B satisfying the Slate-Pauling rule. The main magnetic contributions are given by the Mn and V constituents. The results presented here suggest the promising applicability of EQH MnVZrP as a spin-filter. Additionally, the elastic property calculations indicate the mechanical stability and elastic anisotropy. The work may be useful in the magnetic Heusler alloys field, introducing a new member to the small group of magnetic semiconductor EQH compounds for spin-filter applications.

18.
RSC Adv ; 10(66): 40411-40420, 2020 Nov 02.
Artigo em Inglês | MEDLINE | ID: mdl-35520824

RESUMO

In this paper, we present a detailed investigation of the structural, electronic, and optical properties of pristine, nitrogenated, and fluorinated MgO monolayers using ab initio calculations. The two dimensional (2D) material stability is confirmed by the phonon dispersion curves and binding energies. Full functionalization causes notable changes in the monolayer structure and slightly reduces the chemical stability. The simulations predict that the MgO single layer is an indirect semiconductor with an energy gap of 3.481 (4.693) eV as determined by the GGA-PBE (HSE06) functional. The electronic structure of the MgO monolayer exhibits high sensitivity to chemical functionalization. Specifically, nitrogenation induces metallization of the MgO monolayer, while an indirect-direct band gap transition and band gap reduction of 81.34 (59.96)% are achieved by means of fluorination. Consequently, the functionalized single layers display strong optical absorption in the infrared and visible regimes. The results suggest that full nitrogenation and fluorination may be a quite effective approach to enhance the optoelectronic properties of the MgO monolayer for application in nano-devices.

19.
J Mol Graph Model ; 92: 249-255, 2019 11.
Artigo em Inglês | MEDLINE | ID: mdl-31422197

RESUMO

Theoretical calculations based on the density functional theory and the Boltzmann semi-classical transport theory have been carried out to examine the structural, elastic, electronic, optical and thermoelectric properties of Potassium- and Yttrium-based half-Heusler (HH) compounds KYX (X = Ge, Sn and Pb). Based on our calculations, KYGe, KYSn, and KYPb HH compounds are mechanically stable, and show semiconductor nature with direct band gaps of 0.852, 0.921, and 0.927 eV, respectively, which are obtained from mBJ level of theory. Moreover, the KYSn is brittle, while the KYGe and KYPb are dutile. The optical results show that these HH compounds have wide absorption band from high energy region of infrarred to ultraviolet region. At high photon energies (beyond of 13 eV), they shows very small reflectivity. Because of their favorable electronic structure, these materials have very good thermoelectric performance with high thermopower and figure of merit. The effect of temperature on thermoelectric properties also is discussed in details.


Assuntos
Complexos de Coordenação/química , Elasticidade , Condutividade Elétrica , Germânio/química , Chumbo/química , Condutividade Térmica , Algoritmos , Fenômenos Químicos , Modelos Teóricos
20.
J Mol Graph Model ; 90: 153-160, 2019 07.
Artigo em Inglês | MEDLINE | ID: mdl-31085499

RESUMO

First principles calculations based on Full-Potential Linearized Augmented Plane-Wave (FP-LAPW) method have been carried out to study the structural, electronic and optical properties of AeBi2O6 (Ae = Sr and Ba) compounds. Optimal crystal structure is found out by optimizing lattice constants and internal parameters of constituent atoms using the Generalized Gradient Approximation as proposed by Wu-Cohen (GGA-WC). While the electronic, dielectric and optical properties of considered materials are investigated using original Becke-Johnson (BJ) potential as it reproduces very reasonable indirect band gaps as compared with experimental ones with value of 1.769 eV and 1.822 eV for SrBi2O6 and BaBi2O6, respectively. The interactions between O-2p and Bi-5s-5p, which are responsible of photocatalytic activity of studied compounds, are demonstrated. Finally, the Debye quasi-harmonic model is used to calculate the thermodynamic properties including bulk modulus, heat capacities, thermal expansion, Debye temperature and entropy of AeBi2O6 compounds. All of them are investigated for wide range of temperature up to 1200 K and of pressure up to 45 GPa.


Assuntos
Bário/química , Bismuto/química , Estrôncio/química , Eletrônica/métodos , Elétrons , Entropia , Temperatura , Termodinâmica
SELEÇÃO DE REFERÊNCIAS
DETALHE DA PESQUISA