Investigation of the Influence of Infrared Illumination on the Pulse Shapes of Output Signals of CdZnTe Detectors.

The spectrometric characteristics of CdZnTe detectors are largely determined by the nonuniformity of the material and the influence of the negative polarization effects associated with the formation of space charges in the sensitive volume of the detector. They change the electric field distribution in the detector and affect the efficiency of the charge carrier collection. An analysis of the waveforms of the output pulses was used to investigate the uniformity of the charge collection and electric field distribution in the detectors when irradiated by the alpha particles. The influence of infrared (IR) illumination on these parameters was evaluated. IR illumination had no positive effect on the planar detector but greatly improved the charge collection in quasi-hemispherical detectors in the peripheral (corner) regions. The output pulse amplitude increased, and the rise time notably decreased. Polarization that occurred predominantly in the corner regions at low temperatures (from -30 °C to -20 °C) was eliminated using IR illumination.

Charge collection efficiency of commercially available parallel-plate ionisation chambers in ultra-high dose-per-pulse electron beams.

Objective. This investigation aims to experimentally determine the charge collection efficiency (CCE) of six commercially available parallel-plate ionisation chamber (PPIC) models in ultra-high dose-per-pulse (UHDPP) electron beams.Approach. The CCE of 22 PPICs has been measured in UHDPP electron beams at the National Metrology Institution of Germany (PTB). The CCE was determined for a dose per pulse (DPP) range between 0.1 and 6.4 Gy (pulse duration of 2.5µs). The results obtained with the different PPICs were compared to evaluate the reproducibility, intra- and inter-model variation, and the performance of a CCE empirical model.Main results. The intra-model variation was, on average, 4.0%, which is more than three times the total combined relative standard uncertainty and was found to be greater at higher DPP (up to 20%). The inter-model variation for the PPIC with 2 mm electrode spacing, which was found to be, on average, 10%, was also significant compared to the relative uncertainty and the intra-model variation. The observed CCE variation could not be explained only by the expected deviation of the electrode spacing from the nominal value within the manufacturing tolerance. It should also be noted that a substantial polarity effect, between 0.914(5) and 1.201(3), was observed, and significant intra- and inter-model variation was observed on this effect.Significance. For research and pre-clinical study, the commercially available PPIC with a well-known CCE (directly measured for the specific chamber) and with a small electrode spacing could be used for relative and absolute dosimetry with a lower-limit uncertainty of 1.6% (k= 1) in the best case. However, to use a PPIC as a secondary standard in UHDPP electron beams for clinical purposes would require new model development to reduce the ion recombination, the polarity effect, and the total standard uncertainty on the dose measurement.

Passivation effect on Cd0.95Mn0.05Te0.98Se0.02 radiation detection performance.

CdTe-based detectors have the problem of Te-rich surface layers caused by Br etching, which is one of fabrication steps. Te-rich layer acts as a trapping center and serves as an additional source of charge carriers, thereby degrading transport property of charge carriers and enriching leakage current on surface of detector. To solve this problem, we introduced sodium hypochlorite (NaOCl) as a passivant, and investigated its effect on Cd0.95Mn0.05Te0.98Se0.02 (CMTS), by analyzing chemical state of surface and its performance. After passivation with NaOCl, the results of X-ray photoelectron spectroscopy (XPS) shows the formation of tellurium oxide and elimination of water on CMTS surface, and CMTS presented enhanced performance with Am-241 radioisotope. Consequently, it is demonstrated that the passivation with NaOCl reduces leakage current, compensates defect, and elevates transport of charge carriers, thereby decreasing charge loss of carriers and improving performance of CMTS detector.

Modeling the charge collection efficiency in the Li-diffused inactive layer of P-type high purity germanium detector.

A model of the Li-diffused inactive layer in P-type high purity germanium detectors is built to describe the transportation of charge carriers and calculate the charge collection efficiency therein. The model is applied to calculate charge collection efficiency of a P-type point-contact germanium detector used in rare event physics experiments and validated in another P-type semi-planar germanium detector. The calculated charge collection efficiency curves are well consistent with measurements for both detectors. Effects of the Li doping processes on the charge collection efficiency are discussed based on the model. This model can be easily extended to other P-type germanium detectors, for instance, the P-type broad-energy Ge detector, and the P-type inverted-coaxial point-contact detector.

The Effect of Fractionation during the Vacuum Deposition of Stabilized Amorphous Selenium Alloy Photoconductors on the Overall Charge Collection Efficiency.

The general fabrication process for stabilized amorphous selenium (a-Se) detectors is vacuum deposition. The evaporant alloy is typically selenium alloyed with 0.3-0.5%As to stabilize it against crystallization. During the evaporation, fractionation leads to the formation of a deposited film that is rich in As near the surface and rich in Se near the substrate. The As content is invariably not uniform across the film thickness. This paper examines the effect of non-uniform As content on the charge collection efficiency (CE). The model for the actual CE calculation is based on the generalized CE equation under small signals; it involves the integration of the reciprocal range-field product (the schubweg) and the photogeneration profile. The data for the model input were extracted from the literature on the dependence of charge carrier drift mobilities and lifetimes on the As content in a-Se1-xAsx alloys to generate the spatial variation of hole and electron ranges across the photoconductor film. This range variation is then used to calculate the actual CE in the integral equation as a function of the applied field. The carrier ranges corresponding to the average composition in the film are also used in the standard CE equation under uniform ranges to examine whether one can simply use the average As content to calculate the CE. The standard equation is also used with ranges from the spatial average and average inverse. Errors are then compared and quantified from the use of various averages. The particular choice for averaging depends on the polarity of the radiation-receiving electrode and the spatial variation of the carrier ranges.

Optimal Design of Multiple Floating Rings for 3D Large-Area Trench Electrode Silicon Detector.

The 3D electrode silicon detector eliminates the limit of chip thickness, so it can reduce the electrode spacing (small area) and effectively improve the radiation hardness. In order to expand the application range of the 3D electrode detector, we first propose a 3D large-area silicon detector with a large sensitive volume, and realize multiple floating rings on the upper and lower surfaces of the detector. Due to the influence of different charge states and energy levels in the Si-SiO2 interface system, the top and bottom of the 3D P+ electrode are more prone to avalanche breakdown in the 3D large-area detector before the detector is completely depleted or the carrier saturation drift velocity is reached. Moreover, the electric field distribution becomes very uneven under the influence of the oxide charge, resulting in non-equilibrium carriers that cannot drift in the optimal path parallel to the detector surface. In this paper, the effect of floating rings on the performance of a 3D large-area silicon detector is studied by TCAD simulation. It can increase avalanche breakdown voltage by 14 times in a non-irradiated environment, and can work safely in a moderate irradiated environment. The charge collection efficiency can be effectively improved by optimizing the drift path.

3D Simulation, Electrical Characteristics and Customized Manufacturing Method for a Hemispherical Electrode Detector.

The theoretical basis of a hypothetical spherical electrode detector was investigated in our previous work. It was found that the proposed detector has very good electrical characteristics, such as greatly reduced full depletion voltage, small capacitance and ultra-fast collection time. However, due to the limitations of current technology, spherical electrode detectors cannot be made. Therefore, in order to use existing CMOS technology to realize the fabrication of the detector, a hemispherical electrode detector is proposed. In this work, 3D modeling and simulation including potential and electric field distribution and hole concentration distribution are carried out using the TCAD simulation tools. In addition, the electrical characteristics, such as I-V, C-V, induced current and charge collection efficiency (CCE) with different radiation fluences, are studied to predict the radiation hardness property of the device. Furthermore, a customized manufacturing method is proposed and simulated with the TCAD-SPROCESS simulation tool. The key is to reasonably set the aspect ratio of the deep trench in the multi-step repetitive process and optimize parameters such as the angle, energy, and dose of ion implantation to realize the connection of the heavily doped region of the near-hemispherical electrode. Finally, the electrical characteristics of the process simulation are compared with the device simulation results to verify its feasibility.

Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4.

Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga2O3) and gallium nitride (GaN), and the converter layer materials are boron carbide (B4C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.

Significant Influence of a Single Atom Change in Auxiliary Acceptor on Photovoltaic Properties of Porphyrin-Based Dye-Sensitized Solar Cells.

The rational design of porphyrin sensitizers is always crucial for dye-sensitized solar cells (DSSCs), since the change of only a single atom can have a significant influence on the photovoltaic performance. We incorporated the pyridothiadiazole group, as a stronger electron-withdrawing group, into the commonly well-established skeleton of D-porphyrin-triple bond-acceptor sensitizers by a single atom change for a well-known strong electron-withdrawing benzothiadiazole (BTD) unit as an auxiliary acceptor. The impact of the pyridothiadiazole group on the optical; electrochemical; and photovoltaic properties of D⁻π⁻A porphyrin sensitizers was investigated with comparison for a benzothiadiazole-substituted SGT-020 porphyrin. The pyridothiadiazole-substituted SGT-024 porphyrin dye was red-shifted so that the absorption range might be expected to achieve higher light harvest efficiency (LHE) than the SGT-020 porphyrin. However, all the devices were fabricated by utilizing SGT-020 and SGT-024, evaluated and found to achieve a cell efficiency of 10.3% for SGT-020-based DSSC but 4.2% for SGT-024-based DSSC under standard global AM 1.5G solar light conditions. The main reason is the lower charge collection efficiency of SGT-024-based DSSC than SGT-020-based DSSC, which can be attributed to the tilted dye adsorption mode on the TiO2 photoanode. This may allow for faster charge recombination, which eventually leads to lower Jsc, Voc and power conversion efficiency (PCE).

Study of inactive layer uniformity and charge collection efficiency of a p-type point-contact germanium detector.

The characteristics of the surface inactive layer of a 1-kg-mass p-type point-contact germanium detector were studied. The thickness of the inactive layer and its uniformity on the top and lateral surfaces were measured. A charge collection efficiency function was developed according to the Monte Carlo simulation to describe the charge collection capacity along the depth within this inactive layer. In the energy range below 18keV, the surface, bulk, and total spectra of 57Co, 133Ba, 137Cs, and 60Co from simulations based on the charge collection efficiency function were well consistent with those from experiments.