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1.
Polymers (Basel) ; 14(17)2022 Sep 01.
Artigo em Inglês | MEDLINE | ID: mdl-36080680

RESUMO

The operating safety of spacecraft in space environments is closely related to the surface discharging phenomenon of dielectrics such as polyimide (PI) film in solar arrays; moreover, carrier traps in the dielectric can affect its insulation performance. Therefore, to improve the vacuum surface flashover characteristics of PI film by nano modification and reveal the effect of trap distribution on the flashover of PI composite film, first, the original PI and nano-ZnO/PI composite films with different additive amounts (0.5, 1, 2, and 3 wt.%) were prepared by in situ polymerization and their performance was evaluated by the physicochemical properties characterized by methods such as thermogravimetric analysis; second, the surface traps of the original and nanocomposite films were measured and calculated by surface potential decay method, and the carrier mobility was also obtained; finally, the vacuum direct current (DC) surface flashover characteristics and bulk resistivity of all the film samples were measured and analyzed. The experiment results showed that with the increase in the amount of nano-ZnO, both the shallow and deep trap density increased significantly, while the trap energy varied slightly, and the surface flashover voltage also increased obviously. Based on the multi-core model, the increases in the shallow and deep trap density after the introduction of nano-ZnO into the PI matrix was analyzed from the microscopic perspective of the interface. Based on the comparative analysis of the trap distribution and surface flashover voltage characteristics, a bilayer model of vacuum DC surface flashover development was proposed. In the bilayer model, deep traps and shallow traps play a dominant role in the vacuum-solid interface and the inner surface of the dielectric, respectively, and increasing the trap density could effectively inhibit secondary electron multiplication on the surface and accelerate charge dissipation inside the film. Consequently, nano-ZnO can purposefully control the trap distribution, and then improve the flashover characteristics of nano-ZnO/PI composite films, which provides a new approach for improving the spacecraft material safety.

2.
Polymers (Basel) ; 14(12)2022 Jun 16.
Artigo em Inglês | MEDLINE | ID: mdl-35746027

RESUMO

Polyimide, which is widely used to insulate power equipment operating in a vacuum environment, is prone to insulation failure due to surface flashover. Using POSS to modify it is an effective solution. This paper focuses on the study of DC surface flashover characteristics in vacuum of POSS/polyimide composite film, by introducing 1%, 3%, 5% equivalent mole content of POSS into polyimide, and conducting a surface flashover characteristics test in vacuum together with pure polyimide. The physical and chemical properties of the composite films were tested utilizing Fourier transform infrared spectroscopy and ultraviolet-visible spectroscopy. Combined with resistivity, SEM, and other test techniques, the influence mechanism of POSS molecular modification on DC surface flashover characteristics of polyimide films in vacuum was initially revealed. The results showed that after the introduction of POSS, the overall functional group structure of polyimide remained unchanged, the intermolecular charge transfer complexation was inhibited, and the transmittance of the film increased. The thermal conductivity and thermogravimetric temperature of the film are improved to a certain extent, and the mechanical properties are slightly decreased. With the increase of the introduced POSS content, the dielectric strength of the composite film is also enhanced. The surface flashover voltage of the composite film with a POSS content of 5% is 17.5 kV in vacuum, which is 30.5% higher than that of the pure film. Further analysis shows that the introduction of POSS will reduce the resistivity of the composite film, accelerate the dissipation of surface charges, and increase the flashover voltage. In addition, POSS forms a uniformly distributed Si-O-Si cage-like structure through molecular modification. When the surface of the film is damaged, SiOx inorganic flocculent particles are generated, which can not only scatter electrons, but also shallow the depth of trap energy level and accelerate the dissipation rate of surface charge, thus increasing the flashover voltage.

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