Fabrication of Large-Area Silicon Spherical Microlens Arrays by Thermal Reflow and ICP Etching.

In this paper, we proposed an efficient and high-precision process for fabricating large-area microlens arrays using thermal reflow combined with ICP etching. When the temperature rises above the glass transition temperature, the polymer cylinder will reflow into a smooth hemisphere due to the surface tension effect. The dimensional differences generated after reflow can be corrected using etching selectivity in the following ICP etching process, which transfers the microstructure on the photoresist to the substrate. The volume variation before and after reflow, as well as the effect of etching selectivity using process parameters, such as RF power and gas flow, were explored. Due to the surface tension effect and the simultaneous molding of all microlens units, machining a 3.84 × 3.84 mm2 silicon microlens array required only 3 min of reflow and 15 min of ICP etching with an extremely low average surface roughness Sa of 1.2 nm.

Fabrication of High Precision Silicon Spherical Microlens Arrays by Hot Embossing Process.

In this paper, a high-precision, low-cost, batch processing nanoimprint method is proposed to process a spherical microlens array (MLA). The nanoimprint mold with high surface precision and low surface roughness was fabricated by single-point diamond turning. The anti-sticking treatment of the mold was carried out by perfluorooctyl phosphoric acid (PFOPA) liquid deposition. Through the orthogonal experiment of hot embossing with the treated mold and subsequent inductively coupled plasma (ICP) etching, the microstructure of MLA was transferred to the silicon substrate, with a root mean square error of 17.7 nm and a roughness of 12.1 nm Sa. The average fitted radius of the microlens array units is 406.145 µm, which is 1.54% different from the design radius.

The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl2-Based Plasma for Integrated Optics Applications.

Chlorine processes are widely used for the formation of waveguide structures in InP-based optoelectronics. Traditionally, ICP etching of InP in a Cl2-based plasma requires substrate temperatures in the range of 150-200 °C. This condition is mandatory, since during the etching process low-volatility InClx components are formed and at insufficient temperatures are deposited onto substrate, leading to the formation of defects and further impossibility of the formation of waveguide structures. The need to preheat the substrate limits the application of chlorine processes. This paper presents a method of ICP etching an InP/InGaAsP heterostructure in a Cl2/Ar/N2 gas mixture. A feature of the developed method is the cyclic etching of the heterostructure without preliminary heating. The etching process starts at room temperature. In the optimal etching mode, the angle of inclination of the sidewalls of the waveguides reached 88.8° at an etching depth of more than 4.5 µm. At the same time, the surface roughness did not exceed 30 nm. The selectivity of the etching process with respect to the SiNx mask was equal to 9. Using the developed etching method, test integrated waveguide elements were fabricated. The fabricated active integrated waveguide (p-InP epitaxial layers were not removed) with a width of 2 µm demonstrated an optical loss around 11 ± 1.5 dB/cm at 1550 nm. The insertion loss of the developed Y- and MMI-splitters did not exceed 0.8 dB.

A Selective Etching Route for Large-Scale Fabrication of ß-Ga2O3 Micro-/Nanotube Arrays.

In this paper, based on the different etching characteristics between GaN and Ga2O3, large-scale and vertically aligned ß-Ga2O3 nanotube (NT) and microtube (MT) arrays were fabricated on the GaN template by a facile and feasible selective etching method. GaN micro-/nanowire arrays were prepared first by inductively coupled plasma (ICP) etching using self-organized or patterning nickel masks as the etching masks, and then the Ga2O3 shell layer converted from GaN was formed by thermal oxidation, resulting in GaN@Ga2O3 micro-/nanowire arrays. After the GaN core of GaN@Ga2O3 micro-/nanowire arrays was removed by ICP etching, hollow Ga2O3 tubes were obtained successfully. The micro-/nanotubes have uniform morphology and controllable size, and the wall thickness can also be controlled with the thermal oxidation conditions. These vertical ß-Ga2O3 micro-/nanotube arrays could be used as new materials for novel optoelectronic devices.

Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching.

GaAs nanostructures have attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate was rarely reported, and most of the preparation processes are complex. Here, we report a black GaAs fabrication process using a simple inductively coupled plasma etching process, with no extra lithography process. The fabricated sample has a low reflectance value, close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

Research on a Micro-Processing Technology for Fabricating Complex Structures in Single-Crystal Quartz.

Single-crystal quartz material is widely applied in the manufacture of resonators and sensors, but it is difficult to process because of its high hardness. A novel way to fabricate single-crystal quartz structures is proposed in this paper; the method includes quartz-on-silicon (QoS) technology and inductively coupled plasma (ICP) etching, which makes it feasible to fabricate complex structures with crystal quartz. The QoS method encompasses the bonding of silicon and quartz, followed by the thinning and polishing of quartz, which can enable the fabrication of an ultra-thin quartz wafer on silicon. In this way, instead of the conventional wet etching with hydrofluoric acid, the quartz layer can be easily etched using the ICP dry-etching method. Then, the structure of the pure quartz material is obtained by removing the silicon wafer. In addition, the silicon layer can be processed into the appropriate structure. This aspect overcomes the difficulty of processing a complex structure of single-crystal quartz with different crystal orientations. Thin single-crystal quartz wafers of Z-cut with a thickness of less than 40 µm were obtained by using this method, and a complex three-dimensional structure with an 80 µm width was also acquired by the ICP etching of the quartz wafer. The method can be applied to make both crystal-oriented quartz-based sensors and actuators, such as quartz resonant accelerometers.