Unveiling Superior Solar-Blind Photodetection with a NiO/ZnGa2O4 Heterojunction Diode.

This investigation presents a self-powered, solar-blind photodetector utilizing a low-temperature fabricated crystalline NiO/ZnGa2O4 heterojunction with a staggered type-II band alignment. The device leverages the pyrophototronic effect (PPE), combining the photoelectric effect in the p-n junction and the pyroelectric effect in the non-centrosymmetric ZnGa2O4 crystal. This synergistic effect enhances the photodetector's performance parameters, thereby outperforming traditional solar-blind photodetectors. The device demonstrates an extremely low dark current of 5.39 fA, a high responsivity of 88 mA/W, and a very high specific detectivity of 2.03 × 1014 Jones under 246 nm light irradiation at 0 V bias. Significantly, due to the PPE, the impact demonstrates a much-enhanced transient response when tested under various light intensities, ranging from 18 to 122 µW/cm2. The photodetector shows a high responsivity of 338 A/W and an outstanding detectivity of 7.1 × 1018 Jones with an applied voltage of -13 V, showing its ability to detect weak signals. Single-crystalline ZnGa2O4 fabricated by MOCVD exhibits significant absorption of deep UV light, and the heterojunction's type-II band alignment with NiO is responsible for its exceptional self-powered pyrophotoelectric detecting and rectifying capabilities.

The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials.

The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and dry etching using an ion beam (RIE-reactive ion etching). The deep-level transient spectroscopy (DLTS) method was used to determine the defect levels occurring in the analyzed structures. The obtained results indicate that the choice of etching method affects the occurrence of additional defect levels in the MCT material, but it has no significance for InAs/InAsSb T2SLs.

Epitaxial Growth of Ga2O3: A Review.

Beta-phase gallium oxide (ß-Ga2O3) is a cutting-edge ultrawide bandgap (UWBG) semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric field strength of about 8 MV/cm. These properties make it highly suitable for next-generation power electronics and deep ultraviolet optoelectronics. Key advantages of ß-Ga2O3 include the availability of large-size single-crystal bulk native substrates produced from melt and the precise control of n-type doping during both bulk growth and thin-film epitaxy. A comprehensive understanding of the fundamental growth processes, control parameters, and underlying mechanisms is essential to enable scalable manufacturing of high-performance epitaxial structures. This review highlights recent advancements in the epitaxial growth of ß-Ga2O3 through various techniques, including Molecular Beam Epitaxy (MBE), Metal-Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), Mist Chemical Vapor Deposition (Mist CVD), Pulsed Laser Deposition (PLD), and Low-Pressure Chemical Vapor Deposition (LPCVD). This review concentrates on the progress of Ga2O3 growth in achieving high growth rates, low defect densities, excellent crystalline quality, and high carrier mobilities through different approaches. It aims to advance the development of device-grade epitaxial Ga2O3 thin films and serves as a crucial resource for researchers and engineers focused on UWBG semiconductors and the future of power electronics.

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms.

Quaternary (AlxGa1-x)yIn1-yP alloys grown on GaAs substrates have recently gained considerable interest in photonics for improving visible light-emitting diodes, laser diodes, and photodetectors. With two degrees of freedom (x, y) and keeping growth on a lattice-matched GaAs substrate, the (AlxGa1-x)0.5In0.5P alloys are used for tuning structural, phonon, and optical characteristics in different energy regions from far-infrared (FIR) → near-infrared (NIR) → ultraviolet (UV). Despite the successful growth of (AlxGa1-x)0.5In0.5P/n+-GaAs epilayers, limited optical, phonon, and structural characteristics exist. Here, we report our results of carefully examined optical and vibrational properties on highly disordered alloys using temperature-dependent photoluminescence (TD-PL), Raman scattering spectroscopy (RSS), and Fourier-transform infrared reflectivity (FTIR). Macroscopic models were meticulously employed to analyze the TD-PL, RSS, and FTIR data of the (Al0.24Ga0.76)0.5In0.5P/n+-GaAs epilayers to comprehend the energy-dependent characteristics. The Raman scattering and FTIR results of phonons helped analyze the reflectivity spectra in the FIR region. Optical constants were carefully integrated in the transfer matrix method for evaluating the reflectivity R(E) and transmission T(E) spectra in the NIR → UV regions, validating the TD-PL measurements of bandgap energies (EgPL).

Direct Measurement of the Thermal Expansion Coefficient of Epitaxial WSe2 by Four-Dimensional Scanning Transmission Electron Microscopy.

Current reports of thermal expansion coefficients (TEC) of two-dimensional (2D) materials show large discrepancies that span orders of magnitude. Determining the TEC of any 2D material remains difficult due to approaches involving indirect measurement of samples that are atomically thin and optically transparent. We demonstrate a methodology to address this discrepancy and directly measure TEC of nominally monolayer epitaxial WSe2 using four-dimensional scanning transmission electron microscopy (4D-STEM). Experimentally, WSe2 from metal-organic chemical vapor deposition (MOCVD) was heated through a temperature range of 18-564 °C using a barrel-style heating sample holder to observe temperature-induced structural changes without additional alterations or destruction of the sample. By combining 4D-STEM measurements with quantitative structural analysis, the thermal expansion coefficient of nominally monolayer polycrystalline epitaxial 2D WSe2 was determined to be (3.5 ± 0.9) × 10-6 K-1 and (5.7 ± 2) × 10-5 K-1 for the in- and out-of-plane TEC, respectively, and (3.6 ± 0.2) × 10-5 K-1 for the unit cell volume TEC, in good agreement with historically determined values for bulk crystals.

Effects of Miscut on Step Instabilities in Homo-Epitaxially Grown GaN.

The rough morphology at the growth surface results in the non-uniform distribution of indium composition, intentionally or unintentionally doped impurity, and thus impacts the performance of GaN-based optoelectronic and vertical power electronic devices. We observed the morphologies of unintentionally doped GaN homo-epitaxially grown via MOCVD and identified the relations between rough surfaces and the miscut angle and direction of the substrate. The growth kinetics under the effect of the Ehrlich-Schwoebel barrier were studied, and it was found that asymmetric step motions in samples with a large miscut angle or those grown at high temperature were the causes of step-bunching. Meandering steps were believed to be caused by surface free energy minimization for steps with wide terraces or deviating from the [11¯00] m-direction.

Impact of Residual Compositional Inhomogeneities on the MCT Material Properties for IR Detectors.

HgCdTe is a well-known material for state-of-the-art infrared photodetectors. The interd-iffused multilayer process (IMP) is used for Metal-Organic Chemical Vapor Deposition (MOCVD) of HgCdTe heterostructures, enabling precise control of composition. In this method, alternating HgTe and CdTe layers are deposited, and they homogenize during growth due to interdiffusion, resulting in a near-uniform material. However, the relatively low (350 °C) IMP MOCVD growth temperature may result in significant residual compositional inhomogeneities. In this work, we have investigated the residual inhomogeneities in the IMP-grown HgCdTe layers and their influence on material properties. Significant IMP growth-related oscillations of composition have been revealed in as-grown epilayers with the use of a high-resolution Secondary Ion Mass Spectroscopy (SIMS). The oscillations can be minimized with post-growth annealing of the layers at a temperature exceeding that of growth. The electric and photoelectric characterizations showed a significant reduction in the background doping and an increase in the recombination time, which resulted in dramatic improvement of the spectral responsivity of photoconductors.

Laser-induced transverse voltage effect inc-axis inclined LaxSr1-xTiO3thin films prepared by MOCVD.

Light and thermal detectors based on the laser-induced transverse voltage (LITV) effect have garnered significant interest for their rapid and broad spectral response. In this study, we prepared the La-doped SrTiO3(STO) epitaxial thin films on the 12° inclined single crystal LaAlO3(LAO) (100) substrates using our home-designed metal-organic chemical vapor deposition system. Under the illumination of a 248 nm laser, the LITV signals of LaxSr1-xTiO3films were observed and showed dependence on the La doping level, which can be explained by the changes in the light absorption coefficient, thermal conductivity, and optical penetration depth. The optimized LITV signal was observed with a peak voltage of 23.25 V and a decay time of 106 ns under the laser power density of 1.0 mJ mm-2. The high peak voltage and fast response time of LaxSr1-xTiO3show great potential in the field of light and thermal detection.

Low-Leakage Current Core-Shell AlGaN Nanorod LED Device Operating in the Ultraviolet-B Band.

Despite the considerable potential of AlGaN-based ultraviolet-B light-emitting diodes (UV-B LEDs) in various applications such as phototherapy, UV curing, plant growth, and analytical technology, their development is still ongoing due to low luminescence efficiency. In this study, we introduced a novel epitaxial growth mechanism to effectively control the height and thickness of AlGaN multiple wells (MWs) on AlGaN nanorod structures using horizontal reactor-based metal-organic chemical vapor deposition (MOCVD). By adjusting the H2 carrier gas flow rate, we could control the growth boundary layer's thickness, successfully separating the AlGaN well and p-AlGaN layer from the substrate. Cathodoluminescence (CL) measurements confirmed the stability of the core-shell AlGaN quantum wells as a highly stable nonpolarized structure, with the wavelength peak remaining almost unchanged under various injection currents. Furthermore, transmission electron microscopy (TEM) provided clear evidence of differentiation, highlighting the distinct formation of the 275 nm AlGaN core and the 295 nm AlGaN shell structure. The developed AlGaN MW structure, characterized by these rectification features, not only demonstrated a significantly improved electroluminescence (EL) peak intensity but also exhibited a much lower leakage current compared to the conventional core-shell AlGaN structure. The newly proposed growth mechanism and advanced nonpolarized core-shell AlGaN structure are expected to serve as excellent alternatives for substantially enhancing the efficiency of the next generation of high-efficiency UV LEDs.

2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy.

The production of freestanding membranes using two-dimensional (2D) materials often involves techniques such as van der Waals (vdW) epitaxy, quasi-vdW epitaxy, and remote epitaxy. However, a challenge arises when attempting to manufacture freestanding GaN by using these 2D-material-assisted growth techniques. The issue lies in securing stability, as high-temperature growth conditions under metal-organic chemical vapor deposition (MOCVD) can cause damage to the 2D materials due to GaN decomposition of the substrate. Even when GaN is successfully grown using this method, damage to the 2D material leads to direct bonding with the substrate, making the exfoliation of the grown GaN nearly impossible. This study introduces an approach for GaN growth and exfoliation on 2D material/GaN templates. First, graphene and hexagonal boron nitride (h-BN) were transferred onto the GaN template, creating stable conditions under high temperatures and various gases in MOCVD. GaN was grown in a two-step process at 750 and 900 °C, ensuring exfoliation in cases where the 2D materials remained intact. Essentially, while it is challenging to grow GaN on 2D material/GaN using only MOCVD, this study demonstrates that with effective protection of the 2D material, the grown GaN can endure high temperatures and still be exfoliated. Furthermore, these results support that vdW epitaxy and remote epitaxy principle are not only possible with specific equipment but also applicable generally.

The Role of Carbon in Metal-Organic Chemical Vapor Deposition-Grown MoS2 Films.

Acquiring homogeneous and reproducible wafer-scale transition metal dichalcogenide (TMDC) films is crucial for modern electronics. Metal-organic chemical vapor deposition (MOCVD) offers a promising approach for scalable production and large-area integration. However, during MOCVD synthesis, extraneous carbon incorporation due to organosulfur precursor pyrolysis is a persistent concern, and the role of unintentional carbon incorporation remains elusive. Here, we report the large-scale synthesis of molybdenum disulfide (MoS2) thin films, accompanied by the formation of amorphous carbon layers. Using Raman, photoluminescence (PL) spectroscopy, and transmission electron microscopy (TEM), we confirm how polycrystalline MoS2 combines with extraneous amorphous carbon layers. Furthermore, by fabricating field-effect transistors (FETs) using the carbon-incorporated MoS2 films, we find that traditional n-type MoS2 can transform into p-type semiconductors owing to the incorporation of carbon, a rare occurrence among TMDC materials. This unexpected behavior expands our understanding of TMDC properties and opens up new avenues for exploring novel device applications.

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion.

Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here, we report the full in situ metal organic chemical vapor deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (4″) Si(111) substrates. The bottom Sb2Te3 layer serves as an ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also inducing a remarkable shift of the Fermi level to place it very close to the Dirac point, as visualized by angle-resolved photoemission spectroscopy. To exploit such ideal topologically protected surface states, we fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and probe the spin-charge conversion (SCC) by spin pumping ferromagnetic resonance. A large SCC is measured at room temperature and is interpreted within the inverse Edelstein effect, thus resulting in a conversion efficiency of λIEEE ∼ 0.44 nm. Our results demonstrate the successful tuning of the surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ MOCVD process, which is highly interesting in view of its future technology transfer.

Supported MOCVD TiO2 Thin Films Grown on Modified Stainless Steel Mesh for Sensing Applications.

Among semiconductor metal oxides, that are an important class of sensing materials, titanium dioxide (TiO2) thin films are widely employed as sensors because of their high chemical and mechanical stability in harsh environments, non-toxicity, eco-compatibility, and photocatalytic properties. TiO2-based chemical oxygen demand (COD) sensors exploit the photocatalytic properties of TiO2 in inducing the oxidation of organic compounds to CO2. In this work, we discuss nanostructured TiO2 thin films grown via low-pressure metal organic chemical vapor deposition (MOCVD) on metallic AISI 316 mesh. To increase the surface sensing area, different inorganic acid-based chemical etching protocols have been developed, determining the optimal experimental conditions for adequate substrate roughness. Both chemically etched pristine meshes and the MOCVD-coated ones have been studied by scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) microanalysis, and X-ray photoelectron spectroscopy (XPS). We demonstrate that etching by HCl/H2SO4 at 55 °C provides the most suitable surface morphology. To investigate the behavior of the developed high surface area TiO2 thin films as COD sensors, photocatalytic degradation of functional model pollutants based on ISO 10678:2010 has been tested, showing for the best performing acid-etched mesh coated with polycrystalline TiO2 an increase of 60% in activity, and degrading 66 µmol of MB per square meter per hour.

Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS2 Films.

Metal-Organic CVD method (MOCVD) allows for deposition of ultrathin 2D transition metal dichalcogenides (TMD) films of electronic quality onto wafer-scale substrates. In this work, the effect of temperature on structure, chemical states, and electronic qualities of the MOCVD MoS2 films were investigated. The results demonstrate that the temperature increase in the range of 650 °C to 950 °C results in non-monotonic average crystallite size variation. Atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy investigation has established the film crystal structure improvement with temperature increase in this range. At the same time, X-Ray photoelectron spectroscopy (XPS) method allowed to reveal non-stoichiometric phase fraction increase, corresponding to increased sulfur vacancies (VS) concentration from approximately 0.9 at.% to 3.6 at.%. Established dependency between the crystallite domains size and VS concentration suggests that these vacancies are form predominantly at the grain boundaries. The results suggest that an increased Vs concentration and enhanced charge carriers scattering at the grains' boundaries should be the primary reasons of films' resistivity increase from 4 kΩ·cm to 39 kΩ·cm.

Reduced Defect Density in MOCVD-Grown MoS2 by Manipulating the Precursor Phase.

Advancements in the synthesis of large-area, high-quality two-dimensional transition metal dichalcogenides such as MoS2 play a crucial role in the development of future electronic and optoelectronic devices. The presence of defects formed by sulfur vacancies in MoS2 results in low photoluminescence emission and imparts high n-type doping behavior, thus substantially affecting material quality. Herein, we report a new method in which single-phase (liquid) precursors are used for the metal-organic chemical vapor deposition (MOCVD) growth of a MoS2 film. Furthermore, we fabricated a high-performance photodetector (PD) and achieved improved photoresponsivity and faster photoresponse in the spectral range 405-637 nm compared to those of PDs fabricated by the conventional MOCVD method. In addition, the fabricated MoS2 thin film showed a threshold voltage shift in the positive gate bias direction owing to the reduced number of S vacancy defects in the MoS2 lattice. Thus, our method significantly improved the synthesis of monolayer MoS2 and can expand the application scope of high-quality, atomically thin materials in large-scale electronic and optoelectronic devices.

Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980-990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.

We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980-990 nm emission wavelength). Selective area epitaxy of InGaAs quantum wells was performed on templates that had a patterned periodic structure consisting of a window (where epitaxial growth occurred) and a passive mask (where epitaxial growth was suppressed), each with a width of 100 µm for every element. Additionally, a selectively grown potential barrier layer was included, which was characterized by an almost parabolic curvature profile of the surface. We conducted a study on the influence of the curvature profile of the growth surface on the optical properties of InGaAs quantum wells and the spatial distribution of composition in an ultrawide window. Our results showed that, under fixed selective-area-epitaxy conditions, the composition of the InxGa1-xAs and the wavelength of the quantum-well emission changed across the width of the window. Our study demonstrates that increasing the curvature profile of the growth surface of highly strained quantum wells leads to a transition in the photoluminescence wavelength distribution profile across the window, from quasi-parabolic to inverted parabolic.

High-Performance Solar-Blind Ultraviolet Photodetectors Based on ß-Ga2O3 Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal-Organic Chemical Vapor Deposition.

We have achieved significantly improved device performance in solar-blind deep-ultraviolet photodetectors fabricated from ß-Ga2O3 thin films grown via metal-organic chemical vapor deposition (MOCVD) on p-Si(111) substrates by improving material quality through the use of an AlN buffer layer. High-structural-quality ß-Ga2O3 films with a (-201) preferred orientation are obtained after the introduction of the AlN buffer. Under 3 V bias, the dark current reaches a minimum of 45 fA, and the photo-to-dark current ratio (PDCR) reaches 8.5 × 105 in the photodetector with the metal-semiconductor-metal (MSM) structure. The peak responsivity and detectivity are 38.8 A/W and 2.27 × 1015 cm·Hz1/2/W, respectively, which are 16.5 and 230 times that without the buffer layer. Additionally, benefiting from the introduction of the AlN layer, the photodetection performance of the ß-Ga2O3/AlN/Si heterojunction is significantly improved. The PDCR, peak responsivity, and detectivity for the ß-Ga2O3/AlN/p-Si photodetector at 5 V bias are 2.7 × 103, 11.84 A/W, and 8.31 × 1013 cm·Hz1/2/W, respectively. The improved structural quality of ß-Ga2O3 is mainly attributed to the decreased in-plane lattice mismatch of 2.3% for ß-Ga2O3(-201)/AlN(002) compared to that of 20.83% for ß-Ga2O3(-201)/Si(111), as well as the elimination of the native amorphous SiOx surface layer on the Si substrate during the initial growth of oxide thin films.

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition.

Large-area epitaxial growth of III-V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1×109cm-2is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO2/Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm-2/(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III-V thin films on van der Waals substrates.

Various Types of Light Guides for Use in Lossy Mode Resonance-Based Sensors.

A comparative study of figure-of-merit fiber sensors of the mass concentration of NaCl solutions based on single-mode and multi-mode fibers was carried out. Lossy mode resonance is realized on chemically thinned sections of optical fibers to various diameters (from 26 to 100 µm) coated with ZnTe. Thin-film coatings were applied using the method of metalorganic chemical vapor deposition (MOCVD). Samples of single-mode and multi-mode fiber sensors were created in such a way that the depth and spectral position of resonances in aqueous NaCl solutions coincided. Sensors implemented on a single-mode fiber have a higher sensitivity (5930 nm/refractive index unit (RIU)) compared to those on a multi-mode fiber (4860 nm/RIU) and a smaller half-width of the resonance in the transmission spectrum. According to the results of experiments, figure-of-merit sensors are in the range of refractive indices of 1.33-1.35 for: multi-mode fiber-25 RIU-1, single-mode fiber-75 RIU-1. The sensitivity of the resulting sensors depends on the surface roughness of the ZnTe coating. The roughness of films synthesized on a single-mode fiber is four times higher than this parameter for a coating on a multi-mode fiber. For the first time, in the transmission spectrum during the synthesis of a thin-film coating on a multi-mode fiber, the possibility of separating the first nine orders of resonances into electric and magnetic transverse components has been demonstrated. The characteristics of sensors with the operating wavelength range in the visible (500-750 nm) and infrared (1350-1550 nm) regions of the spectrum are compared. The characteristics of multi-mode lossy mode resonance sensors are demonstrated, which make them more promising for use in applied devices than for laboratory research.

Magnetoresistance and Magnetic Relaxation of La-Sr-Mn-O Films Grown on Si/SiO2 Substrate by Pulsed Injection MOCVD.

The results of magnetoresistance (MR) and resistance relaxation of nanostructured La1-xSrxMnyO3 (LSMO) films with different film thicknesses (60-480 nm) grown on Si/SiO2 substrate by the pulsed-injection MOCVD technique are presented and compared with the reference manganite LSMO/Al2O3 films of the same thickness. The MR was investigated in permanent (up to 0.7 T) and pulsed (up to 10 T) magnetic fields in the temperature range of 80-300 K, and the resistance-relaxation processes were studied after the switch-off of the magnetic pulse with an amplitude of 10 T and a duration of 200 µs. It was found that the high-field MR values were comparable for all investigated films (~-40% at 10 T), whereas the memory effects differed depending on the film thickness and substrate used for the deposition. It was demonstrated that resistance relaxation to the initial state after removal of the magnetic field occurred in two time scales: fast' (~300 µs) and slow (longer than 10 ms). The observed fast relaxation process was analyzed using the Kolmogorov-Avrami-Fatuzzo model, taking into account the reorientation of magnetic domains into their equilibrium state. The smallest remnant resistivity values were found for the LSMO films grown on SiO2/Si substrate in comparison to the LSMO/Al2O3 films. The testing of the LSMO/SiO2/Si-based magnetic sensors in an alternating magnetic field with a half-period of 22 µs demonstrated that these films could be used for the development of fast magnetic sensors operating at room temperature. For operation at cryogenic temperature, the LSMO/SiO2/Si films could be employed only for single-pulse measurements due to magnetic-memory effects.