Design Rule of Electron- and Hole-Selective Contacts for Polycrystalline Silicon-Based Passivating Contact Solar Cells.

A crystalline silicon (c-Si) solar cell with a polycrystalline silicon/SiOx (poly-Si/SiOx) structure, incorporating both electron and hole contacts, is an attractive choice for achieving ideal carrier selectivity and serving as a fundamental component in high-efficiency perovskite/Si tandem and interdigitated back-contact solar cells. However, our understanding of the carrier transport mechanism of hole contacts remains limited owing to insufficient studies dedicated to its investigation. There is also a lack of comparative studies on the poly-Si/SiOx electron and hole contacts for ideal carrier-selective solar cells. Therefore, this study aims to address these knowledge gaps by exploring the relationship among microstructural evolution, dopant in-diffusion, and the resulting carrier transport mechanism in both the electron and hole contacts of poly-Si/SiOx solar cells. Electron (n+ poly-Si/SiOx/substrate)- and hole (p+ poly-Si/SiOx/substrate)-selective passivating contacts are subjected to thermal annealing. Changes in the passivation properties and carrier transport mechanisms of these contacts are investigated during thermal annealing at various temperatures. Notably, the results demonstrate that the passivation properties and carrier transport mechanisms are strongly influenced by the microstructural evolution of the poly-Si/SiOx layer stack and dopant in-diffusion. Furthermore, electron and hole contacts exhibit common behaviors regarding microstructural evolution and dopant in-diffusion. However, the hole contacts exhibit relatively inferior electrical properties overall, mainly because both the SiOx interface and the p+ poly-Si are found to be highly defective. Moreover, boron in the hole contacts diffuses deeper than phosphorus in the electron contacts, resulting in deteriorated carrier collection. The experimental results are also supported by device simulation. Based on these findings, design rules are suggested for both electron and hole contacts, such as using thicker SiOx and/or annealing the solar cell at a temperature not exceeding the critical annealing temperature of the hole contacts.

Unassisted Water Splitting Using Standard Silicon Solar Cells Stabilized with Copper and Bifunctional NiFe Electrocatalysts.

Silicon photovoltaic cells functionalized with water-splitting electrocatalysts are promising candidates for unassisted water splitting. In these devices, the total surface of silicon solar cells is covered with electrocatalysts, causing issues with (i) stabilizing silicon solar cells in water and (ii) device efficiency due to parasitic optical absorption in electrocatalysts. We describe and validate a water-splitting device concept using a crystalline silicon solar cell where the front side is covered with an insulating Si3N5 antireflection coating. The Ag contacts, fired through the antireflection coating, are removed and subsequently substituted with NiFe layered double hydroxide (LDH) or Cu/NiFe-LDH electrocatalysts. In this device, only the site of Ag contacts, nearly 2% of the total device area, is covered by the electrocatalyst. We found that this small area of the catalyst does not limit device performance and the addition of a Cu interlayer between Si and NiFe-LDH improves device performance and stability. The unassisted water-splitting efficiency of 11.31%, measured without separating the evolved gases, is achieved using a device composed of three series-connected silicon solar cells and an NiFe-LDH/Cu/Ni-foam counter electrode in a highly alkaline electrolyte.

Conductive Cuprous Iodide Hole-Selective Contacts with Thermal and Ambient Stability for Silicon Solar Cells.

Dopant-free carrier-selective contacts are becoming increasingly attractive for application in silicon solar cells because of the depositions for their fabrication being simpler and occurring at lower temperatures. However, these contacts are limited by poor thermal and environmental stability. In this contribution, the use of the conductive high work function of cuprous iodide, with its characteristic thermal and ambient stability, has enabled a hole-selective contact for p-type silicon solar cells because of the large conduction band offset and small valence offset at the CuI/p-Si interface. The contact resistivity (≈30 mΩ·cm2) of the Ag/CuI (20 nm)/p-Si contact after annealing to 200 °C represents the CuI-based hole-selective contact with low resistance and high thermal stability. Microscopic images and elemental mapping of the Ag/CuI/p-Si contact interface revealed that a nonuniform, continuous CuI layer separates the Ag electrode and p-type Si. Thermal treatment at 200 °C results in the intermixing of the Ag and CuI layers. As a result, the 200 °C thermal process improves the efficiency (20.7%) and stability of the p-Si solar cells featuring partial CuI hole-selective contact. Furthermore, the devices employing the CuI/Ag contact are thermally stable upon annealing to temperatures up to 350 °C. These results not only demonstrate the use of metal iodide instead of metal oxides as hole-selective contacts for efficient silicon solar cells but also have important implications regarding industrial feasibility and longevity for deployment in the field.

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells.

A high recombination rate and high thermal budget for aluminum (Al) back surface field are found in the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the holes on the silicon surface because of Fermi-level pinning effect. As a result, low-temperature-deposited, dopant-free chromium trioxide (CrO x, x < 3) with high stability and high performance is first applied in a p-type silicon solar cell as a hole-selective contact at the rear surface. By using 4 nm CrO x between the p-type silicon and Ag, we achieve a reduction of the contact resistivity for the contact of Ag directly on p-type silicon. For further improvement, we utilize a CrO x (2 nm)/Ag (30 nm)/CrO x (2 nm) multilayer film on the contact between Ag and p-type crystalline silicon (c-Si) to achieve a lower contact resistance (40 mΩ·cm2). The low-resistivity Ohmic contact is attributed to the high work function of the uniform CrO x film and the depinning of the Fermi level of the SiO x layer at the silicon interface. Implementing the advanced hole-selective contacts with CrO x/Ag/CrO x on the p-type silicon solar cell results in a power conversion efficiency of 20.3%, which is 0.1% higher than that of the cell utilizing 4 nm CrO x. Compared with the commercialized p-type solar cell, the novel CrO x-based hole-selective transport material opens up a new possibility for c-Si solar cells using high-efficiency, low-temperature, and dopant-free deposition techniques.