Corn Stover variability drives differences in bisabolene production by engineered Rhodotorula toruloides.

Microbial conversion of lignocellulosic biomass represents an alternative route for production of biofuels and bioproducts. While researchers have mostly focused on engineering strains such as Rhodotorula toruloides for better bisabolene production as a sustainable aviation fuel (SAF), less is known about the impact of the feedstocks heterogeneity on bisabolene production. Critical material attributes like feedstock composition, nutritional content, and inhibitory compounds can all influence bioconversion. Further, the given feedstocks can have a marked influence on selection of suitable pretreatment and hydrolysis technologies, optimizing the fermentation conditions, and possibly even modifying the microorganism's metabolic pathways, to better utilize the available feedstock. This work aimed to examine and understand how variations in corn stover batches, anatomical fractions, and storage conditions impact the efficiency of bisabolene production by R. toruloides. All of these represent different facets of feedstock heterogeneity. Deacetylation, mechanically refining and enzymatic hydrolysis (DMR-EH) of these variable feedstocks served as the basis of this research. The resulting hydrolysates were converted to bisabolene via fermentation, a sustainable aviation fuel precursor, using an engineered R. toruloides strain. This study showed that different sources of feedstock heterogeneity can influence microbial growth and product titer in counterintuitive ways, as revealed through global analysis of protein expression. The maximum bisabolene produced by R. toruloides was on the stalk fraction of corn stover hydrolysate (8.89 ± 0.47 g/L). Further, proteomics analysis comparing the protein expression between the anatomic fractions showed that proteins relating to carbohydrate metabolism, energy production and conversion as well as inorganic ion transport metabolism were either significantly upregulated or downregulated. Specifically, downregulation of proteins related to the iron-sulfur cluster in stalk fraction suggests a coordinated response by R. toruloides to maintain overall metabolic balance, and this was corroborated by the concentration of iron in the feedstocks.

3D printing of thermochromic multilayer flexible film for multilevel information encryption.

Flexible thermal-responsive encryption devices are widely employed in information encryption and anti-counterfeiting due to their cost-effectiveness and dynamic data encryption and decryption capabilities. However, most current devices are limited to a single layer of encryption, resulting in restricted decryption methods and storage capacity, as well as reliance on external heating. In this study, we integrate multiple layers of encryption within a single device and introduce self-heating thermochromic technology along with infrared thermal imaging encryption to establish a novel concept of a multilayer flexible encryption system. By combining infrared encryption and thermochromic encryption in three-dimensional space enhances the difficulty level for decryption while achieving high storage capacity for information. The internally integrated conductive heating layer within the multilayer structure facilitates rapid and adjustable heating for thermochromic patterns, eliminating the need for external heat sources. Furthermore, we employ a low-cost customizable multi-material integrated 3D printing process for manufacturing multilayer flexible encryption devices. This research presents an innovative solution for designing and fabricating high-density multilevel flexible encryption devices.

Symbiotic defect-reinforced bimetallic MOF-derived fiber components for solar-assisted atmospheric water collection.

Conversion of atmospheric water to sustainable and clean freshwater resources through MOF-based adsorbent has great potential for the renewable environmental industry. However, its daily water production is hampered by susceptibility to agglomeration, slow water evaporation efficiency, and limited water-harvesting capacity. Herein, a solar-assisted bimetallic MOF (BMOF)-derived fiber component that surmounts these limitations and exhibits both optimized water-collect capacity and short adsorption-desorption period is proposed. The proposed strategy involves utilizing bottom-up interface-induced assembly between carboxylated multi-walled carbon nanotube and hygroscopic BMOF on a multi-ply glass fiber support. The designed BMOF (MIL-100(Fe,Al)-3) skeleton constructed using bimetallic-node defect engineering exhibits a high specific surface area (1,535.28 m2/g) and pore volume (0.76 cm3/g), thereby surpassing the parent MOFs and other reported MOFs in capturing moisture. Benefiting from the hierarchical structure of fiber rods and the solar-driven self-heating interface of photothermal layer, the customized BMOF crystals realize efficient loading and optimized water adsorption-desorption kinetics. As a result, the resultant fiber components achieve six adsorption-desorption cycles per day and an impressive water collection of 1.45 g/g/day under medium-high humidity outdoor conditions. Therefore, this work will provide new ideas for optimizing the daily yield of atmospheric water harvesting techniques.

Accurate Evaluation of Electro-Thermal Performance in Silicon Nanosheet Field-Effect Transistors with Schemes for Controlling Parasitic Bottom Transistors.

The electro-thermal performance of silicon nanosheet field-effect transistors (NSFETs) with various parasitic bottom transistor (trpbt)-controlling schemes is evaluated. Conventional punch-through stopper, trench inner-spacer (TIS), and bottom oxide (BOX) schemes were investigated from single-device to circuit-level evaluations to avoid overestimating heat's impact on performance. For single-device evaluations, the TIS scheme maintains the device temperature 59.6 and 50.4 K lower than the BOX scheme for n/pFETs, respectively, due to the low thermal conductivity of BOX. However, when the over-etched S/D recess depth (TSD) exceeds 2 nm in the TIS scheme, the RC delay becomes larger than that of the BOX scheme due to increased gate capacitance (Cgg) as the TSD increases. A higher TIS height prevents the Cgg increase and exhibits the best electro-thermal performance at single-device operation. Circuit-level evaluations are conducted with ring oscillators using 3D mixed-mode simulation. Although TIS and BOX schemes have similar oscillation frequencies, the TIS scheme has a slightly lower device temperature. This thermal superiority of the TIS scheme becomes more pronounced as the load capacitance (CL) increases. As CL increases from 1 to 10 fF, the temperature difference between TIS and BOX schemes widens from 1.5 to 4.8 K. Therefore, the TIS scheme is most suitable for controlling trpbt and improving electro-thermal performance in sub-3 nm node NSFETs.

Determination of Self-Heating in Silicon Photomultipliers.

The main consequence of radiation damage on a silicon photomultiplier (SiPM) is a significant increase in the dark current. If the SiPM is not adequately cooled, the power dissipation causes it to heat up, which alters its performance parameters. To investigate this heating effect, a measurement cycle was developed and performed with a KETEK SiPM glued to an Al2O3 substrate and with HPK SiPMs glued to either an Al2O3 substrate or a flexible PCB. The assemblies were connected either directly to a temperature-controlled chuck on a probe station, or through layers of materials with defined thermal resistance. An LED operated in DC mode was used to illuminate the SiPM and to tune the power dissipated in a measurement cycle. The SiPM current was used to determine the steady-state temperature reached by the SiPM via a calibration curve. The increase in SiPM temperature due to self-heating is analyzed as a function of the power dissipation in the SiPM and the thermal resistance. This information can be used to adjust the operating voltage of the SiPMs, taking into account the effects of self-heating. Similarly, this approach can be applied to investigate the unknown thermal contact of packaged SiPMs.

Advancing the Characterization of Recycled Polyolefin Blends with a Combined Experimental and Numerical Approach to Thermomechanical Behavior.

The blending of polyolefins (POs), such as polyethylene (PE) and polypropylene (PP), is a growing area of research, particularly for recycling mixed polyolefin (MPO) waste through flotation sorting techniques. However, understanding the thermomechanical behavior of these recycled blends is challenging due to limitations in the existing characterization methods. This paper introduces a combined experimental and numerical method to accurately assess the complex mechanical behavior of high-density PE, PP, and their blends. We conducted detailed thermomechanical analyses using a high-speed stereo digital image correlation (DIC) system paired with an infrared camera to capture temperature variations alongside mechanical stress and strain. This approach allowed us to correct for distortions caused by necking and to derive accurate stress-strain relationships. We also applied a cutting-edge unified semi-crystalline polymer (USCP) model to simplify the analysis, focusing on the effects of strain rate and temperature, including self-heating and thermal softening phenomena. Our results, which closely match experimental observations of stress-strain behavior and temperature changes, offer new insights into the thermomechanical properties of PO blends, which are essential for advancing their practical applications in various fields.

Leakage and Thermal Reliability Optimization of Stacked Nanosheet Field-Effect Transistors with SiC Layers.

In this work, we propose a SiC-NSFET structure that uses a PTS scheme only under the gate, with SiC layers under the source and drain, to improve the leakage current and thermal reliability. Punch-through stopper (PTS) doping is widely used to suppress the leakage current, but aggressively high PTS doping will cause additional band-to-band (BTBT) current. Therefore, the bottom oxide isolation nanosheet field-effect transistor (BOX-NSFET) can further reduce the leakage current and become an alternative to conventional structures with PTS. However, thermal reliability issues, like bias temperature instability (BTI), hot carrier injection (HCI), and time-dependent dielectric breakdown (TDDB), induced by the self-heating effect (SHE) of BOX-NSFET, become more profound due to the lower thermal conductivity of SiO2 than silicon. Moreover, the bottom oxide will reduce the stress along the channel due to the challenges associated with growing high-quality SiGe material on SiO2. Therefore, this method faces difficulties in enhancing the mobility of p-type devices. The comprehensive TCAD simulation results show that SiC-NSFET significantly suppresses the substrate leakage current compared to the conventional structure with PTS. In addition, compared to the BOX-NSFET, the stress reduction caused by the bottom oxide is avoided, and the SHE is mitigated. This work provides significant design guidelines for leakage and thermal reliability optimization of next-generation advanced nodes.

A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress.

This study aimed to comprehensively understand the performance and degradation of both p- and n-channel vertical double diffused MOS (VDMOS) transistors under bias temperature stress. Conducted experimental investigations involved various stress conditions and annealing processes to analyze the impacts of BT stress on the formation of oxide trapped charge and interface traps, leading to threshold voltage shifts. Findings revealed meaningful threshold voltage shifts in both PMOS and NMOS devices due to stresses, and the subsequent annealing process was analyzed in detail. The study also examined the influence of stress history on self-heating behavior under real operating conditions. Additionally, the study elucidated the complex correlation between stress-induced degradation and device reliability. The insights contribute to optimizing the performance and permanence of VDMOS transistors in practical applications, advancing semiconductor technology. This study underscored the importance of considering stress-induced effects on device reliability and performance in the design and application of VDMOS transistors.

Fast-Response and Low-Power Self-Heating Gas Sensor Using Metal/Metal Oxide/Metal (MMOM) Structured Nanowires.

With the escalating global awareness of air quality management, the need for continuous and reliable monitoring of toxic gases by using low-power operating systems has become increasingly important. One of which, semiconductor metal oxide gas sensors have received great attention due to their high/fast response and simple working mechanism. More specifically, self-heating metal oxide gas sensors, wherein direct thermal activation in the sensing material, have been sought for their low power-consuming characteristics. However, previous works have neglected to address the temperature distribution within the sensing material, resulting in inefficient gas response and prolonged response/recovery times, particularly due to the low-temperature regions. Here, we present a unique metal/metal oxide/metal (MMOM) nanowire architecture that conductively confines heat to the sensing material, achieving high uniformity in the temperature distribution. The proposed structure enables uniform thermal activation within the sensing material, allowing the sensor to efficiently react with the toxic gas. As a result, the proposed MMOM gas sensor showed significantly enhanced gas response (from 6.7 to 20.1% at 30 ppm), response time (from 195 to 17 s at 30 ppm), and limit of detection (∼1 ppm) when compared to those of conventional single-material structures upon exposure to carbon monoxide. Furthermore, the proposed work demonstrated low power consumption (2.36 mW) and high thermal durability (1500 on/off cycles), demonstrating its potential for practical applications in reliable and low-power operating gas sensor systems. These results propose a new paradigm for power-efficient and robust self-heating metal oxide gas sensors with potential implications for other fields requiring thermal engineering.

Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors.

In this paper, we investigate the effects of negative bias instability (NBTI) and self-heating effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between SHE and NBTI, we established an NBTI simulation framework based on trap microdynamics and considered the influence of the self-heating effect. The results show that NBTI weakens the SHE effect, while SHE exacerbates the NBTI effect. Since the width of the nanosheet in NSFET has a significant control effect on the electric field distribution, we also studied the effect of the width of the nanosheet on the NBTI and self-heating effect. The results show that increasing the width of the nanosheet will reduce the NBTI effect but will enhance the SHE effect. In addition, we extended our research to the SRAM cell circuit, and the results show that the NBTI effect will reduce the static noise margin (SNM) of the SRAM cell, and the NBTI effect affected by self-heating will make the SNM decrease more significantly. In addition, our research results also indicate that increasing the nanosheet width can help slow down the NBTI effect and the negative impact of NBTI on SRAM performance affected by the self-heating effect.

A Review of Reliability in Gate-All-Around Nanosheet Devices.

The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFET. The introduction of a new device structure, coupled with aggressive pitch scaling, can give rise to reliability challenges. In this article, we present a review of the key reliability mechanisms in GAA NS FET, including bias temperature instability (BTI), hot carrier injection (HCI), gate oxide (Gox) time-dependent dielectric breakdown (TDDB), and middle-of-line (MOL) TDDB. We aim to not only underscore the unique reliability attributes inherent to NS architecture but also provide a holistic view of the status and prospects of NS reliability, taking into account the challenges posed by future scaling.

Design of a pyrolysis system and the characterisation data of biochar produced from coconut shells, carambola pruning, and mango pruning using a low-temperature slow pyrolysis process.

Biochar production is an effective approach to managing abundant agricultural wastes. Pruning wastes from trimming the branches of trees such as carambola and mango, as well as coconut shells, are among the agricultural wastes that have reutilisation potential, which would simultaneously reduce the space required for disposal. In this study, the potential use of these wastes by converting them into biochar was investigated. The data presented in this study highlight the design of a pyrolysis system for a low-temperature slow pyrolysis process, as well as the characterisation data of the biochar produced using this system. The data collected included the elemental composition, porosity, as well as surface and adsorption characteristics of the biochar. These data indicate that the biochar produced had certain qualities that would enable its use for specific agricultural and industrial purposes. Meanwhile, the design indicated that it could facilitate small farms with specific outputs. In brief, these data can be used as references for developing a small-scale system for agricultural waste management using different types of crops.

Self-Heating Multistage Microneedle Patch for Topical Therapy of Skin Cancer.

Topical therapy is a favored route for treating skin cancers, but remain many challenges, such as low delivery efficiency, limited tumor tissue penetration, and unsatisfactory blood circulation. Here, a self-heating microneedle (MN) patch with multilevel structures, including a dissolvable base for rapid drug release, a degradable tip for sustained drug release, and a self-heating substrate is described. The thermally enhanced drug release performance is validated through both in vitro and in vivo experiments. High tumor therapeutic efficacy can be achieved due to the rapid release of 5-fluorouracil, while the sustained release of thymoquinone endows the MN patch with long-term tumor inhibition ability. It is further demonstrated the feasibility of such an MN patch for in vivo topical therapy of cutaneous squamous cell carcinoma with high efficacy, low side effects, and long-term inhibition of recurrence. This self-heating MN patch holds great promise for potential clinical applications, especially for the treatment of skin cancers.

The Understanding and Compact Modeling of Reliability in Modern Metal-Oxide-Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms.

With the technological scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability have garnered widespread attention. Traditional single-mode reliability mechanisms and modeling are less sufficient to meet the demands of resilient circuit designs. Mixed-mode reliability mechanisms and modeling have become a focal point of future designs for reliability. This paper reviews the mechanisms and compact aging models of mixed-mode reliability. The mechanism and modeling method of mixed-mode reliability are discussed, including hot carrier degradation (HCD) with self-heating effect, mixed-mode aging of HCD and Bias Temperature Instability (BTI), off-state degradation (OSD), on-state time-dependent dielectric breakdown (TDDB), and metal electromigration (EM). The impact of alternating HCD-BTI stress conditions is also discussed. The results indicate that single-mode reliability analysis is insufficient for predicting the lifetime of advanced technology and circuits and provides guidance for future mixed-mode reliability analysis and modeling.

Semi-Embedded Structured Bi Nanospheres for Boosted Self-Heating-Induced Healing of Li-Dendrites.

It is reported that self-heating-induced healing on lithium metal anodes (LMAs) provides a mitigation strategy for suppressing Li dendrites. However, how to boost the self-heating-induced healing of Li-dendrites and incorporate it into Li-host design remains an imminent problem that needs to be solved. Herein, a new bismuth nanosphere semi-buried carbon cloth (Bi-NS-CC) material with a 3D flexible host structure is proposed. The ultrasmall Bi nanospheres are uniformly and densely distributed on carbon fiber, providing active sites to form uniform Li3 Bi alloy with molten lithium, thereby guiding the injection of molten metallic lithium into the 3D structure to form a self-supporting composite LMAs. The ingenious semi-embedded structure with strong interfacial C─Bi ensures superior mechanical properties. Interestingly, when the current density reaches up to 10 mA cm-2 , the lithium dendrites undergo self-heating. Carbon cloth as a host can quickly and uniformly transfer heat, which induces the uniform migration of Li on anodes. The semi-embedded structure with strong C─Bi ensures Bi nanospheres guide the formation of smooth morphology even under these harsh conditions (high-temperature, high-rate, etc.). Consequently, at 10 mA cm-2 /10 mAh cm-2 , the Li/Li3 Bi-NS-CC realizes ultra-long cycles of 1500 h and ultra-low overpotential of 15 mV in a symmetric cell.

Prompt Electronic Discrimination of Gas Molecules by Self-Heating Temperature Modulation.

Though considerable progress has been achieved on gas molecule recognition by electronic nose (e-nose) comprised of nonselective (metal oxide) semiconductor chemiresistors, extracting adequate molecular features within short time (<1 s) remains a big obstacle, which hinders the emerging e-nose applications in lethal or explosive gas warning. Herein, by virtue of the ultrafast (∼20 µs) thermal relaxation time of self-heated WO3-based chemiresistors fabricated via oblique angle deposition, instead of external heating, self-heating temperature modulation has been proposed to generate sufficient electrical response features. Accurate discrimination of 12 gases (including 3 xylene isomers with the same function group and molecular weight) has been readily achieved within 0.5-1 s, which is one order faster than the state-of-the-art e-noses. A smart wireless e-nose, capable of instantaneously discriminating target gas in ambient air background, has been developed, paving the way for the practical applications of e-nose in the area of homeland security and public health.

Interplay of Anisotropy Energy Barrier and Self-Heating Efficiency of Cobalt-Substituted CuFe2O4 Nanoparticles.

In this study, we delve into the intricate interplay between the anisotropy energy barrier and the self-heating efficiency of magnetic nanoparticles (MNPs). We embarked on this exploration by synthesizing Cu1-xCoxFe2O4 (x = 0, 0.1, 0.3, and 0.5) MNPs using a straightforward coprecipitation method. Our magnetic assessments, conducted at different temperatures, unveiled a notable trend as we traversed from x = 0.1 to x = 0.5. Specifically, we observed a consistent increase in saturation magnetization, coercivity, and remanence. This pattern also extended to the anisotropy energy barrier, which was derived from the effective anisotropy constant determined through the temperature dependency of the coercivity method. However, an intriguing twist emerged when we scrutinized the specific absorption rate (SAR), calculated via the Box-Lucas method. Contrary to much of the existing literature, our experimental results showcased a decline in SAR concerning x. This experimental work challenges the conventional understanding of the relationship between the anisotropy energy barrier and the SAR value of these nanoparticles. This study prompts us to reconsider the intricate mechanisms governing the relaxation of magnetic moments and subsequent heat release when subjected to an alternating magnetic field. By doing so, we aim to gain fresh insights into the self-heating properties of MNPs and optimize their utilization to better understand their heat-release properties and ensure that they are used as efficiently as possible in a variety of biomedical applications.

An Accurate Electro-Thermal Coupling Model of a GaAs HBT Device under Floating Heat Source Disturbances.

Taking into consideration the inaccurate temperature predictions in traditional thermal models of power devices, we undertook a study on the temperature rise characteristics of heterojunction bipolar transistors (HBTs) with a two-dimensional cross-sectional structure including a sub-collector region. We developed a current-adjusted polynomial electro-thermal coupling model based on investigating floating heat sources. This model was developed using precise simulation data acquired from SILVACO (Santa Clara, CA, USA). Additionally, we utilized COMSOL software (version 5.6) to simulate the temperature distribution within parallel power cells, examining further impacts resulting from thermal coupling. The research findings indicate that the rise in current induces modifications in the local carrier concentration, thereby prompting variations in the local electric field, including changes in the heat source's peak location and intensity. The device's peak temperature exhibits a non-linear trend regulated by the current, revealing an error margin of less than 1.5% in the proposed current-corrected model. At higher current levels, the drift of the heat source leads to an increase in the heat dissipation path and reduces the coupling strength between parallel devices. Experiments were performed on 64 GaAs (gallium arsenide) HBT-based power cells using a QFI infrared imaging system. Compared to the traditional temperature calculation model, the proposed model increased the accuracy by 6.84%, allowing for more precise predictions of transistor peak temperatures in high-power applications.

The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks.

With characteristic size scaling down to the nanoscale range, the confined geometry exacerbates the self-heating effect (SHE) in nanoscale devices. In this paper, the impact of ambient temperature (Tamb) on the SHE in stacked nanosheet transistors is investigated. As the number of lateral stacks (Nstack) increases, the nanoscale devices show more severe thermal crosstalk issues, and the current performance between n- and p-type nanoscale transistors exhibits different degradation trends. To compare the effect of different Tamb ranges, the temperature coefficients of current per stack and threshold voltage are analyzed. As the Nstack increases from 4 to 32, it is verified that the zero-temperature coefficient bias point (VZTC) decreases significantly in p-type nanoscale devices when Tamb is above room temperature. This can be explained by the enhanced thermal crosstalk. Then, the gate length-dependent electrothermal characteristics with different Nstacks are investigated at various Tambs. To explore the origin of drain current variation, the temperature-dependent backscattering model is utilized to explain the variation. At last, the simulation results verify the impact of Tamb on the SHE. The study provides an effective design guide for stacked nanosheet transistors when considering multiple stacks in circuit applications.

A Buried Thermal Rail (BTR) Technology to Improve Electrothermal Characteristics of Complementary Field-Effect Transistor (CFET).

The complementary field-effect transistor (CFET) with N-type FET (NFET) stacked on P-type FET (PFET) is a promising device structure based on gate-all-around FET (GAAFET). Because of the high-density stacked structure, the self-heating effect (SHE) becomes more and more severe. Buried thermal rail (BTR) technology on top of the buried power rail (BPR) process is proposed to improve heat dissipation. Through a systematical 3D Technology Computer Aided Design (TCAD) simulation, compared to traditional CFET and CFET with BPR only, the thermal resistance (Rth) of CFET can be significantly reduced with BTR technology, while the drive capability is also improved. Furthermore, based on the proposed BTR technology, different power delivery structures of top-VDD-top-VSS (TDTS), bottom-VDD-bottom-VSS (BDBS), and bottom-VDD-top-VSS (BDTS) were investigated in terms of electrothermal and parasitic characteristics. The Rth of the BTR-BDTS structure is decreased by 5% for NFET and 9% for PFET, and the Ion is increased by 2% for NFET and 7% for PFET.