Ultrahigh Power Factor of Sputtered Nanocrystalline N-Type Bi2Te3 Thin Film via Vacancy Defect Modulation and Ti Additives.

Magnetron-sputtered thermoelectric thin films have the potential for reproducibility and scalability. However, lattice mismatch during sputtering can lead to increased defects in the epitaxial layer, which poses a significant challenge to improving their thermoelectric performance. In this work, nanocrystalline n-type Bi2Te3 thin films with an average grain size of ≈110 nm are prepared using high-temperature sputtering and post-annealing. Herein, it is demonstrated that high-temperature treatment exacerbates Te evaporation, creating Te vacancies and electron-like effects. Annealing improves crystallinity, increases grain size, and reduces defects, which significantly increases carrier mobility. Furthermore, the pre-deposited Ti additives are ionized at high temperatures and partially diffused into Bi2Te3, resulting in a Ti doping effect that increases the carrier concentration. Overall, the 1 µm thick n-type Bi2Te3 thin film exhibits a room temperature resistivity as low as 3.56 × 10-6 Ω∙m. Notably, a 5 µm thick Bi2Te3 thin film achieves a record power factor of 6.66 mW mK-2 at room temperature, which is the highest value reported to date for n-type Bi2Te3 thin films using magnetron sputtering. This work demonstrates the potential for large-scale of high-quality Bi2Te3-based thin films and devices for room-temperature TE applications.

Wimpled thin films via multiple motions of a bubble decorated with surface-active molecules.

HYPOTHESIS: Thin liquid films play a crucial role in various systems and applications. Understanding the mechanisms that regulate their morphology is a scientific challenge with obvious implications for application optimization. Thin liquid films trapped between bubbles and air-liquid interface can show various configurations influenced by their deformation history and system characteristics. EXPERIMENTS: The morphology of thin liquid films formed in the presence of surface-active molecules is here studied with interferometric techniques. Three different systems with varying interfacial properties are investigated to understand their influence on film morphology. Specific deformation histories are applied to the films to generate complex film structures. FINDINGS: We achieve the creation of a rather stable wimple by implementing controlled bubble motions against the air-liquid interface. We provide a criterion for wimple formation based on lubrication theory. The long-term stability of the wimple is also investigated, and more complex multi-wimple structures are experimentally produced building upon the achieved wimple stability.

Thin-Film Transistor Digital Microfluidics Circuit Design with Capacitance-Based Droplet Sensing.

With the continuous expansion of pixel arrays in digital microfluidics (DMF) chips, precise droplet control has emerged as a critical issue requiring detailed consideration. This paper proposes a novel capacitance-based droplet sensing system for thin-film transistor DMF. The proposed circuit features a distinctive inner and outer dual-pixel electrode structure, integrating droplet driving and sensing functionalities. Discharge occurs exclusively at the inner electrode during droplet sensing, effectively addressing droplet perturbation in existing sensing circuits. The circuit employs a novel fan-shaped structure of thin-film transistors. Simulation results show that it can provide a 48 V pixel voltage and demonstrate a sensing voltage difference of over 10 V between deionized water and silicone oil, illustrating its proficiency in droplet driving and accurate sensing. The stability of threshold voltage drift and temperature was also verified for the circuit. The design is tailored for integration into active matrix electrowetting-on-dielectric (AM-EWOD) chips, offering a novel approach to achieve precise closed-loop control of droplets.

On-site extraction of benzophenones from swimming pool water using hybrid tapes based on the integration of hydrophilic-lipophilic balance microparticles and an outer magnetic nanometric domain.

An on-site extraction device is presented consisting of scotch tape modified with concentric domains of micrometric hydrophilic-lipophilic balance (HLB) particles surrounded by a ring of nanometric magnetic ones. On the one hand, HLB microparticles are readily available at the surface of the tape, exposed to interact with the target analytes, being responsible for the extraction capacity of the sorptive phase. On the other hand, the presence of magnetic nanoparticles enables the attachment of the modified tape onto a metallic screw via a magnet, which is then coupled to a wireless drill, enabling the stirring of the microextraction device. Both are simply fixed to the cost-effective, flexible, and versatile support, i.e., scotch tape, owing to their adhesive properties. The microextraction device has been applied to the determination of six benzophenones in swimming pool water samples. The variables that may affect the extraction process have been evaluated. Under the optimum conditions and using liquid chromatography-tandem mass spectrometry as the instrumental technique, the method provided a limit of detection of 0.03 µg L-1. The intra-day precision, evaluated at three different concentration levels and expressed as relative standard deviation, was lower than 10%, which also comprises the variability within single-use sorptive tapes. The accuracy, calculated with spiked samples and expressed as relative recovery, ranged from 71 to 138%. The method was applied to the analysis of swimming pool water, revealing the presence of such compounds.

Enhancing the Stability and Mobility of TFTs via Indium-Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient.

This study demonstrates a significant enhancement in the performance of thin-film transistors (TFTs) in terms of stability and mobility by combining indium-tungsten oxide (IWO) and zinc oxide (ZnO). IWO/ZnO heterojunction structures were fabricated with different channel thickness ratios and annealing environments. The IWO (5 nm)/ZnO (45 nm) TFT, annealed in O2 ambient, exhibited a high mobility of 26.28 cm2/V·s and a maximum drain current of 1.54 µA at a drain voltage of 10 V, outperforming the single-channel ZnO TFT, with values of 3.8 cm2/V·s and 28.08 nA. This mobility enhancement is attributed to the formation of potential wells at the IWO/ZnO junction, resulting in charge accumulation and improved percolation conduction. The engineered heterojunction channel demonstrated superior stability under positive and negative gate bias stresses compared to the single ZnO channel. The analysis of O 1s spectra showed OI, OII, and OIII peaks, confirming the theoretical mechanism. A bias temperature stress test revealed superior charge-trapping time characteristics at temperatures of 25, 55, and 85 °C compared with the single ZnO channel. The proposed IWO/ZnO heterojunction channel overcomes the limitations of the single ZnO channel and presents an attractive approach for developing TFT-based devices having excellent stability and enhanced mobility.

An Organic Microcavity Laser Amplifier Integrated on the End Facet of an Optical Fiber.

We report a thin-film optical amplifier integrated on a fiber facet based on polymer-coated distributed feedback (DFB) microcavities, which are fabricated on a planar substrate and then transferred onto fiber tips by means of a flexible transfer technique. The amplified light directly couples into the fiber and is detected when coupled out at the other end after propagating along the fiber for about 20 cm. A prominently amplification factor of about 4.33 at 578.57 nm is achieved by sending supercontinuum pulses into the hundreds of micrometers' DFB microcavities along the normal direction, which is also the axis direction of the fiber. The random distortions of grating lines generated during the transfer process result in a larger amplification spectral range and a less strict polarization dependence for injected light. Benefitting from the device size of hundreds of micrometers and the ease of integration, polymer amplifiers based on DFB microcavities demonstrate significant application potentials in optical communication systems and miniaturized optical devices.

Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors.

Sn-doped indium oxide (ITO) semiconductor nano-films are fabricated by plasma-enhanced atomic layer deposition using trimethylindium (TMIn), tetrakis(dimethylamino)tin (TDMASn), and O2plasma as the sources of In, Sn and O, respectively. A shared temperature window of 150 °C- 200 °C is observed for the deposition of ITO nano-films. The introduction of Sn into indium oxide is found to increase the concentration of oxygen into the ITO films and inhibit crystallization. Furthermore, two oxidation states are observed for In and Sn, respectively. With the increment of interfaces of In-O/Sn-O in the ITO films, the relative percentage of In3+ions increases and that of Sn4+decreases, which is generated by interfacial competing reactions. By optimizing the channel component, the In0.77Sn0.23O1.11thin-film transistors (TFTs) demonstrate high performance, includingµFEof 52.7 cm2V-1s-1, and a highION/IOFFof ∼5 × 109. Moreover, the devices show excellent positive bias temperature stress stability at 3 MV cm-1and 85 °C, i.e. a minimalVthshift of 0.017 V after 4 ks stress. This work highlights the successful application of ITO semiconductor nano-films by ALD for TFTs.

High-Dimensional Physical Reservoir with Back-End-of-Line-Compatible Tin Monoxide Thin-Film Transistor.

This work demonstrates a physical reservoir using a back-end-of-line compatible thin-film transistor (TFT) with tin monoxide (SnO) as the channel material for neuromorphic computing. The electron trapping and time-dependent detrapping at the channel interface induce the SnO·TFT to exhibit fading memory and nonlinearity characteristics, the critical assets for physical reservoir computing. The three-terminal configuration of the TFT allows the generation of higher-dimensional reservoir states by simultaneously adjusting the bias conditions of the gate and drain terminals, surpassing the performances of typical two-terminal-based reservoirs such as memristors. The high-dimensional SnO TFT reservoir performs exceptionally in two benchmark tests, achieving a 94.1% accuracy in Modified National Institute of Standards and Technology handwritten number recognition and a normalized root-mean-square error of 0.089 in Mackey-Glass time-series prediction. Furthermore, it is suitable for vertical integration because its fabrication temperature is <250 °C, providing the benefit of achieving a high integration density.

Chiral Liquid-Crystal-Based Concave Holographic Spectrometer on a Curved Substrate.

Chiral liquid crystals (CLCs) self-assemble into a helical structure and can efficiently reflect circularly polarized light with corresponding handedness. Utilizing a curved glass substrate and polymerization of photoaligned CLCs, the operation of focusing and diffraction of incident light can be performed efficiently by a single component. When focusing and diffraction in a planar CLC cell are combined between two glass plates, the imaging suffers from astigmatism in the resulting spectrum. In this work, we demonstrate the operation of a spectrometer with low astigmatism using a polymerized CLC layer on a curved substrate. Two samples are fabricated, and the resulting components are operating in the wavelength range of 500-650 nm. Numerical optical modeling is used to minimize transverse aberrations and obtain a highly linear mapping on a camera sensor. In this way, it is demonstrated that a single reflective thin-film optical CLC component with a thickness of only a few micrometers can be used to realize a compact and efficient spectrometer.

Comprehensive Review on the Impact of Chemical Composition, Plasma Treatment, and Vacuum Ultraviolet (VUV) Irradiation on the Electrical Properties of Organosilicate Films.

Organosilicate glass (OSG) films are a critical component in modern electronic devices, with their electrical properties playing a crucial role in device performance. This comprehensive review systematically examines the influence of chemical composition, vacuum ultraviolet (VUV) irradiation, and plasma treatment on the electrical properties of these films. Through an extensive survey of literature and experimental findings, we elucidate the intricate interplay between these factors and the resulting alterations in electrical conductivity, dielectric constant, and breakdown strength of OSG films. Key focus areas include the impact of diverse organic moieties incorporated into the silica matrix, the effects of VUV irradiation on film properties, and the modifications induced by various plasma treatment techniques. Furthermore, the underlying mechanisms governing these phenomena are discussed, shedding light on the complex molecular interactions and structural rearrangements occurring within OSG films under different environmental conditions. It is shown that phonon-assisted electron tunneling between adjacent neutral traps provides a more accurate description of charge transport in OSG low-k materials compared to the previously reported Fowler-Nordheim mechanism. Additionally, the quality of low-k materials significantly influences the behavior of leakage currents. Materials retaining residual porogens or adsorbed water on pore walls show electrical conductivity directly correlated with pore surface area and porosity. Conversely, porogen-free materials, developed by Urbanowicz, exhibit leakage currents that are independent of porosity. This underscores the critical importance of considering internal defects such as oxygen-deficient centers (ODC) or similar entities in understanding the electrical properties of these materials.

Direct Growth of Bi2SeO5 Thin Films for High-k Dielectrics via Atomic Layer Deposition.

This study describes a modified atomic layer deposition (ALD) process for fabricating BiOxSey thin films, targeting their application as high-k dielectrics in semiconductor devices, especially for two-dimensional semiconductors. Using an intermediate-enhanced ALD technique for Bi2Se3 and a plasma-enhanced ALD process for Bi2O3, a method for the sequential deposition of Bi2SeO5 ternary films has been established. The thin film has been deposited on SiO2 and TiN substrates, exhibiting growth rates of 0.17 to 0.16 nm·cycle-1 without an incubation period, thanks to facile nucleation characteristics. The resulting film exhibited high flatness and reached 96% of its theoretical density, forming a uniform nanocrystalline structure. Electrical evaluations using metal-insulator-metal capacitors indicated the dielectric constant (∼17.6) and electrical breakdown strength (2.6 MV·cm-1), demonstrating their potential as a dielectric layer.

Thermoelectric Property Enhancement of Tellurium Nanowires by Surface Passivation.

The pursuit of high-performance thermoelectric materials is of paramount importance in addressing energy sustainability and environmental concerns. Here, we explore the multifaceted impact of sulfur passivation in the matrix of tellurium nanowires (TeNWs), encompassing environmental control, thermoelectric properties, and charge carrier mobility. In this study, we present the facile production of TeNWs using an aqueous solution synthesis approach. The synthesized TeNWs were subsequently subjected to surface modification involving sulfur moieties. Our findings demonstrate that sulfur passivation not only effectively safeguards the nanowires from environmental degradation but also significantly augments their thermoelectric properties. Notably, the highest recorded values were achieved at 560 K for passivated tellurium nanowires, exhibiting a Seebeck coefficient of 246 µV/K, an electrical conductivity of 14.2 S/cm, and power factors of 86.7 µW/m-K2. This strategy presents a promising avenue for the development of advanced thermoelectric materials for applications in energy harvesting, waste heat recovery, and sustainable energy conversion technologies.

Exploring Perfluoroalkyl and Polyfluoroalkyl Substance Presence and Potential Leaching from Reverse Osmosis Membranes: Implications for Drinking Water Treatment.

Reverse osmosis (RO) is increasingly used in drinking water production to effectively remove micropollutants, such as perfluoroalkyl and polyfluoroalkyl substances (PFAS). However, RO membranes themselves may contain PFAS, which can potentially leach into treated drinking water. Leaching experiments and direct total oxidizable precursor assays revealed the presence and leaching potential of PFOS (branched and linear), PFBA, PFHxA, PFNA, and PFOA in five selected commercial RO membranes. This resulted in the release of tens of milligrams of ΣPFAS per membrane element used in drinking water production. Depending on assumptions made regarding leaching kinetics and volume of produced water per membrane element, predicted concentrations of ΣPFAS in the produced water ranged from less than one up to hundreds of pg/L. These concentrations are two to four orders of magnitude lower than those currently observed in Dutch drinking waters. The origin of PFAS in the membranes remains unclear. Further research is needed to bridge the gap between the laboratory conditions as used in this study and the real-world conditions and for a full understanding of potential leaching scenarios. Such an understanding is critical for water producers using RO technologies to proactively manage and mitigate potential PFAS contamination.

Photoluminescence Confocal Mapping of a Novel Nd3+/Yb3+: Zn2SiO4 Composite thin film on Si (100) Substrate Utilizing a 980 nm Pumping Source.

A fixed Nd3+ and varied Yb3+ ion concentration were incorporated in a Zinc-Silicate (SZNYX) composite solution using ex-situ sol-gel solution to fabricate a novel thin film (TF) on Si (100)-substrate. The upconversion luminescence (UCL) spectra of the thin films were measured under 980 nm laser excitation, with the most optimized result for Yb3+ ion concentration of 1.5 mol%. Additionally, a 2-D photoluminescence (PL) confocal mapping of the SZNY15-TF material confirmed uniform PL distribution throughout the space under the same excitation wavelength. Structural characterization via XRD revealed the tetragonal Zn2SiO4 nano-crystalline nature of the film at three distinct annealing temperatures. Morphological characterization using the Field-emission scanning electron Microscope (FESEM) coupled with energy dispersion spectrometer (EDS) affirmed the nanoflower structure and the purity of doping purity in the samples, respectively. These findings collectively confirm the promising UCL properties of the SZNYX-TF samples, suggesting potential applications in photonic.

Effect of N2 reactive gas flow rate on the structural, optical and wettability properties of silicon carbon oxynitride thin films.

In the current research, the silicon carbon oxynitride (SiCON) thin film was deposited on the silicon (Si) substrate by radio frequency (RF) reactive magnetron sputtering method. To comprehensively assess the impact of nitrogen flux rate on thin film characteristics, a suite of advanced analytical methods was utilized. The GIXRD analysis confirmed that the SiCON thin film is amorphous in structure. Additionally, Raman spectroscopy detected no graphite nanocrystals within the film. Ellipsometry measurements further showed that the refractive index of the thin films rises with increased nitrogen flux in the reactive gas, indicating a direct correlation between nitrogen concentration during deposition and optical properties. Based on the designs made with McLeod's software, the amount of reflection can be reduced up to 5.7 % at the wavelength of 4 µm and up to 8.5 % in the wavelength range of 3-5 µm for an optimal thickness thin film. The atomic force microscopy (AFM) examination revealed that the surface roughness of the thin films decreases as the nitrogen flux in the reactive gas mixture increases. Additionally, measurements of the water contact angle (WCA) indicated that the SiCON thin films exhibit a hydrophilic state.

Sensing features, on-site detection and bio-imaging application of a tripodal tris(hydroxycoumarin) based probe towards Cu2+/His.

A new tripodal tris(hydroxycoumarin) based Schiff base, HCTN was synthesized and characterized by FT-IR, 1H NMR, 13C NMR and ESI-HRMS. The probe, HCTN exhibits cyan emission in DMSO/HEPES buffer (9:1, v/v) which selectively detects Cu2+ ion via turn-off fluorescence. The quenching of the fluorescence was due to the binding of the probe, HCTN towards paramagnetic Cu2+ ion resulting in chelation enhanced quenching effect (CHEQ). From the spectroscopic results, the limit of detection of Cu2+ ion was obtained as very low as 0.40 × 10-9 M. The complexation of the metal ion, Cu2+ towards the probe HCTN was confirmed by the ESI-HRMS and Job's plot analysis which supports 1:1 binding stochiometric ratio. In order to validate the affinity of Cu2+ ion towards histidine, the HCTN+Cu2+ system was utilized for the detection of histidine via turn-on mode by the metal displacement approach. The detection limit of His was found to be 7.31 × 10-10 M. In addition to the above, the probe was utilized for various detection applications such as paper strips, cotton swabs, logic gates and thin film applications. The probe, HCTN extends its application to the confocal bioimaging to sense the Cu2+ and Histidine intracellularly.

High-Performance Low-Voltage Thin-Film Transistors: Experimental and Simulation Validation of Atmospheric Pressure Plasma-Assisted Li5AlO4 Metal Oxide Solution Processing.

Metal oxide materials processed using solution methods have garnered significant attention due to their ability to efficiently and affordably create transparent insulating layers or active channel layers on various substrates for thin-film transistors (TFTs) used in modern electronics. The key properties of TFTs largely depend on how charge carriers behave near the thin layer at the semiconductor and dielectric interface. Effectively controlling these characteristics offers a straightforward yet effective approach to enhancing device performance. In this study, we propose a novel strategy utilizing atmospheric pressure plasma (APP) treatment to modulate the electrical properties of dielectric thin films and the interfaces between dielectric and semiconductor layers in TFTs processed by using solution methods. Through APP exposure, significant improvements in key TFT parameters were achieved for solution-processed TFTs. Interface states have been reduced from 1013 to 1011 cm-2, and the on/off current ratio has increased from 103 to 106 while maintaining a high field-effect mobility of 34 cm2 V-1 s-1. Additionally, UV-visible spectroscopy and X-ray analysis have confirmed the effectiveness of APP treatment in controlling interface states and traps, leading to overall performance enhancements in the TFTs. Furthermore, our experimental findings have been systematically validated using technology computer-aided design (TCAD) simulations of fabricated TFTs.

Ultrathin Ternary FeCoNi Alloy Nanoarrays in BaTiO3 Matrix for Room-Temperature Multiferroic and Hyperbolic Metamaterial.

Multifunctional vertically aligned nanocomposite (VAN) thin films exhibit considerable potential in diverse fields. Here, a BaTiO3-FeCoNi alloy (BTO-FCN) system featuring an ultrathin ternary FCN alloy nanopillar array embedded in the BTO matrix has been developed with tailorable nanopillar size and interpillar distance. The magnetic alloy nanopillars combined with a ferroelectric oxide matrix present intriguing multifunctionality and coupling properties. The room-temperature magnetic response proves the soft magnet nature of the BTO-FCN films with magnetic anisotropy has been demonstrated. Furthermore, the anisotropic nature of the dielectric-metal alloy VAN renders it an ideal candidate for hyperbolic metamaterial (HMM), and the epsilon-near-zero (ENZ) wavelength, where the real part of permittivity (ε') turns to negative, can be tailored from ∼700 nm to ∼1050 nm. Lastly, room-temperature multiferroicity has been demonstrated via interfacial coupling between the magnetic nanopillars and ferroelectric matrix.

Acoustofluidic Diversity Achieved by Multiple Modes of Acoustic Waves Generated on Piezoelectric-Film-Coated Aluminum Sheets.

Excitation of multiple acoustic wave modes on a single chip is beneficial to implement diversified acoustofluidic functions. Conventional acoustic wave devices made of bulk LiNbO3 substrates generally generate few acoustic wave modes once the crystal-cut and electrode pattern are defined, limiting the realization of acoustofluidic diversity. In this paper, we demonstrated diversity of acoustofluidic behaviors using multiple modes of acoustic waves generated on piezoelectric-thin-film-coated aluminum sheets. Multiple acoustic wave modes were excited by varying the ratios between IDT pitch/wavelength and substrate thickness. Through systematic investigation of fluidic actuation behaviors and performances using these acoustic wave modes, we demonstrated fluidic actuation diversities using various acoustic wave modes and showed that the Rayleigh mode, pseudo-Rayleigh mode, and A0 mode of Lamb wave generally have better fluidic actuation performance than those of Sezawa mode and higher-order modes of Lamb wave, providing guidance for high-performance acoustofluidic actuation platform design. Additionally, we demonstrated diversified particle patterning functions, either on two sides of acoustic wave device or on a glass sheet by coupling acoustic waves into the glass using the gel. The pattern formation mechanisms were investigated through finite element simulations of acoustic pressure fields under different experimental configurations.

Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111)A Substrates by Molecular Beam Epitaxy.

Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on understanding the growth mechanisms of SnTe thin films. In this manuscript, we investigate the molecular beam epitaxy synthesis of SnTe (111) thin films on InP (111)A substrates. We explore the effect of substrate temperature, Te/Sn flux ratio, and growth rate on the film quality. Using a substrate temperature of 340 °C, a Te/Sn flux ratio of 3, and a growth rate of 0.48 Å/s, fully coalesced and single crystalline SnTe (111) epitaxial layers with X-ray rocking curve full-width-at-half-maxima of 0.09° and root-mean-square surface roughness as low as 0.2 nm have been obtained. Despite the 7.5% lattice mismatch between the SnTe (111) film and the InP (111)A substrate, reciprocal space mapping indicates that the 15 nm SnTe layer is fully relaxed. We show that a periodic interfacial misfit (IMF) dislocation array forms at the SnTe/InP heterointerface, where each IMF dislocation is separated by 14 InP lattice sites/13 SnTe lattice sites, providing rapid strain relaxation and yielding the high quality SnTe layer. This is the first report of an IMF array forming in a rock-salt on zinc-blende material system and at an IV-VI on III-V heterointerface, and highlights the potential for SnTe as a buffer layer for epitaxial telluride film growth. This work represents an important milestone in enabling the heterointegration between IV-VI and III-V semiconductors to create multifunctional devices.