Novel Benzothiadiazole-based Donor-Acceptor Systems: Synthesis, Ultrafast Charge Transfer and Separation Dynamics.

Near-infrared (NIR) absorbing electron donor-acceptor (D-A) chromophores have been at the forefront of current energy research owing to their facile charge transfer (CT) characteristics, which are primitive for photovoltaic applications. Herein, we have designed and developed a new set of benzothiadiazole (BTD)-based tetracyanobutadiene (TCBD)/dicyanoquinodimethane (DCNQ)-embedded multimodular D-A systems (BTD1-BTD6) and investigated their inherent photo-electro-chemical responses for the first time having identical and mixed terminal donors of variable donor-ability. Apart from poor luminescence, the appearance of broad low-lying optical transitions extendable even in the NIR region (> 1000 nm), particularly in the presence of the auxiliary acceptors, are indicative of underlying nonradiative excited state processes leading to strong intramolecular CT and subsequent charge separation (CS) processes in these D-A constructs. The spectral and temporal responses of different photoproducts are obtained from  transient studies. All the systems are found to be susceptible to ultrafast (~ps) CT and CS before carrier recombination to the ground state, which is, however, significantly facilitated after incorporation of the secondary TCBD/DCNQ acceptors, leading to faster and thus efficient CT processes. These findings are likely to expand the horizons of BTD-based multimodular CT systems to revolutionize the realm of solar energy conversion and associated photonic applications.

Effect of Surface Electron Trapping and Small Polaron Formation on the Photocatalytic Efficiency of Copper(I) and Copper(II) Oxides.

Cu2O, CuO, and mixed phase Cu2O/CuO represent promising candidates for photoelectrochemical H2 evolution due to their strong visible light absorption, earth-abundance, and chemical stability. However, the photoelectrochemical efficiency in these materials remains far below the theoretical limit, largely due to poorly understood surface electron dynamics. These dynamics depend on defect states, such as Cu atom vacancies and phase boundaries, which control electron trapping, charge carrier separation, and recombination. In this work, we study the photoinduced electron and hole dynamics at the surface of various Cu oxides using ultrafast extreme ultraviolet reflection-absorption (XUV-RA) spectroscopy. In Cu2O we find that photoexcitation occurs as electron promotion from primarily Cu 3d valence band to Cu 4s conduction band states compared to O 2p valence band to Cu 4s conduction band states in CuO. In catalysts with a significant concentration of Cu vacancies, we observe fast electron trapping to the Cu 3d defect band occurring in less than 100 fs. In contrast, photoexcited electrons in phase pure CuO do not trap to midgap states; rather these electrons form small polarons within approximately 500 fs. Photoelectrochemical measurements of these catalysts show that Cu vacancy-mediated electron trapping correlates with a significant loss of photocurrent. Together, these results provide a detailed picture of the defect states and associated ultrafast carrier dynamics that govern the photocatalytic efficiency in widely studied Cu2O and CuO photocatalysts.

A Femtosecond Electron-Based Versatile Microscopy for Visualizing Carrier Dynamics in Semiconductors Across Spatiotemporal and Energetic Domains.

Carrier dynamics detection in different dimensions (space, time, and energy) with high resolutions plays a pivotal role in the development of modern semiconductor devices, especially in low-dimensional, high-speed, and ultrasensitive devices. Here, a femtosecond electron-based versatile microscopy is reported that combines scanning ultrafast electron microscopy (SUEM) imaging and time-resolved cathodoluminescence (TRCL) detection, which allows for visualizing and decoupling different dynamic processes of carriers involved in surface and bulk in semiconductors with unprecedented spatiotemporal and energetic resolutions. The achieved spatial resolution is better than 10 nm, and the temporal resolutions for SUEM imaging and TRCL detection are ≈500 fs and ≈4.5 ps, respectively, representing state-of-the-art performance. To demonstrate its unique capability, the surface and bulk carrier dynamics involved in n-type gallium arsenide (GaAs) are directly tracked and distinguished. It is revealed, in real time and space, that hot carrier cooling, defect trapping, and interband-/defect-assisted radiative recombination in the energy domain result in ordinal super-diffusion, localization, and sub-diffusion of carriers at the surface, elucidating the crucial role of surface states on carrier dynamics. The study not only gives a comprehensive physical picture of carrier dynamics in GaAs, but also provides a powerful platform for exploring complex carrier dynamics in semiconductors for promoting their device performance.

Tailoring Broadband Nonlinear Optical Characteristics and Ultrafast Photocarrier Dynamics of Bi2O2S Nanosheets by Defect Engineering.

Low-dimensional bismuth oxychalcogenides have shown promising potential in optoelectronics due to their high stability, photoresponse, and carrier mobility. However, the relevant studies on deep understanding for Bi2O2S is quite limited. Here, comprehensive experimental and computational investigations are conducted in the regulated band structure, nonlinear optical (NLO) characteristics, and carrier dynamics of Bi2O2S nanosheets via defect engineering, taking O vacancy (OV) and substitutional Se doping as examples. As the OV continuously increased to ≈35%, the optical bandgaps progressively narrow from ≈1.21 to ≈0.81 eV and NLO wavelengths are extended to near-infrared regions with enhanced saturable absorption. Simultaneously, the relaxation processes are effectively accelerated from tens of picoseconds to several picoseconds, as the generated defect energy levels can serve as both additional absorption cross-sections and fast relaxation channels supported by theoretical calculations. Furthermore, substitutional Se doping in Bi2O2S nanosheets also modulate their optical properties with the similar trends. As a proof-of-concept, passively mode-locked pulsed lasers in the ≈1.0 µm based on the defect-rich samples (≈35% OV and ≈50% Se-doping) exhibit excellent performance. This work deepens the insight of defect functions on optical properties of Bi2O2S nanosheets and provides new avenues for designing advanced photonic devices based on low-dimensional bismuth oxychalcogenides.

Investigation of ultrafast carrier dynamics in curcumin dye for environment friendly dye-sensitized solar cell.

Natural dyes have been widely employed in the fabrication of dye-sensitized solar cells (DSSCs). DSSCs are favored for their cost-effective, and simple fabrication process relies on metal-based and organic dyes. The choice of dyes greatly affects the performance of DSSCs. DSSCs have found a lot of applications in indoor, solar power gadgets with reasonable efficiency up to 13%. Nonetheless, despite advances in DSSC technology, the complex photophysics and excited state dynamics associated with natural dyes employed in DSSCs remain elusive and have not been adequately investigated. This information gap emphasizes the need for more study and analysis into the behavior of these dyes, since understanding their underlying principles might lead to major improvements in DSSC performance and efficiency. In this work, we have investigated the fundamental characteristics and excited-state carrier dynamics of natural dye curcumin using ultrafast transient absorption (TA) spectroscopy technique. The curcumin dye shows delay time-dependent positive and negative signals in the TA spectra, which are related to excited state absorption and stimulated emission. We also found that hydrogen bonding and polarity effect of solvent significantly influence the carrier dynamics of curcumin. Ultrafast lifetime component indicates that hydrogen-bond rearrangements are involved in the kinetics of the relaxation process of the S1 state of curcumin photo-sensitizer.

Ultrafast Electronic Relaxation Dynamics of Atomically Thin MoS2 Is Accelerated by Wrinkling.

Strain engineering is an attractive approach for tuning the local optoelectronic properties of transition metal dichalcogenides (TMDs). While strain has been shown to affect the nanosecond carrier recombination dynamics of TMDs, its influence on the sub-picosecond electronic relaxation dynamics is still unexplored. Here, we employ a combination of time-resolved photoemission electron microscopy (TR-PEEM) and nonadiabatic ab initio molecular dynamics (NAMD) to investigate the ultrafast dynamics of wrinkled multilayer (ML) MoS2 comprising 17 layers. Following 2.41 eV photoexcitation, electronic relaxation at the Γ valley occurs with a time constant of 97 ± 2 fs for wrinkled ML-MoS2 and 120 ± 2 fs for flat ML-MoS2. NAMD shows that wrinkling permits larger amplitude motions of MoS2 layers, relaxes electron-phonon coupling selection rules, perturbs chemical bonding, and increases the electronic density of states. As a result, the nonadiabatic coupling grows and electronic relaxation becomes faster compared to flat ML-MoS2. Our study suggests that the sub-picosecond electronic relaxation dynamics of TMDs is amenable to strain engineering and that applications which require long-lived hot carriers, such as hot-electron-driven light harvesting and photocatalysis, should employ wrinkle-free TMDs.

Real-Time GW-Ehrenfest-Fan-Migdal Method for Nonequilibrium 2D Materials.

Quantum simulations of photoexcited low-dimensional systems are pivotal for understanding how to functionalize and integrate novel two-dimensional (2D) materials in next-generation optoelectronic devices. First-principles predictions are extremely challenging due to the simultaneous interplay of light-matter, electron-electron, and electron-nuclear interactions. We here present an advanced ab initio many-body method that accounts for quantum coherence and non-Markovian effects while treating electrons and nuclei on equal footing, thereby preserving fundamental conservation laws like the total energy. The impact of this advancement is demonstrated through real-time simulations of the complex multivalley dynamics in a molybdenum disulfide (MoS2) monolayer pumped above gap. Within a single framework, we provide a parameter-free description of the coherent-to-incoherent crossover, elucidating the role of microscopic and collective excitations in the dephasing and thermalization processes.

Van der Waals Engineering of Ultrafast Carrier Dynamics in Magnetic Heterostructures.

Heterostructures composed of the intrinsic magnetic topological insulator MnBi2Te4 and its nonmagnetic counterpart Bi2Te3 host distinct surface electronic band structures depending on the stacking order and exposed termination. Here, we probe the ultrafast dynamical response of MnBi2Te4 and MnBi4Te7 following near-infrared optical excitation using time- and angle-resolved photoemission spectroscopy and disentangle surface from bulk dynamics based on density functional theory slab calculations of the surface-projected electronic structure. We gain access to the out-of-equilibrium charge carrier populations of both MnBi2Te4 and Bi2Te3 surface terminations of MnBi4Te7, revealing an instantaneous occupation of states associated with the Bi2Te3 surface layer followed by carrier extraction into the adjacent MnBi2Te4 layers with a laser fluence-tunable delay of up to 350 fs. The ensuing thermal relaxation processes are driven by phonon scattering with significantly slower relaxation times in the magnetic MnBi2Te4 septuple layers. The observed competition between interlayer charge transfer and intralayer phonon scattering demonstrates a method to control ultrafast charge transfer processes in MnBi2Te4-based van der Waals compounds.

Ultrafast Charge Carrier Dynamics in InP/ZnSe/ZnS Core/Shell/Shell Quantum Dots.

The excellent performance of InP/ZnSe/ZnS core/shell/shell quantum dots (CSS-QDs) in light-emitting diodes benefits from the introduction of a ZnSe midshell. Understanding the changes of ultrafast carrier dynamics caused by the ZnSe midshell is important for their optoelectronic applications. Herein, we have compared the ultrafast carrier dynamics in CSS-QDs and InP/ZnS core/shell QDs (CS-QDs) using femtosecond transient absorption spectroscopy. The results show that the ZnSe midshell intensifies the electron delocalization and prolongs the in-band relaxation time of electrons from 238 fs to 350 fs, and that of holes from hundreds of femtoseconds to 1.6 ps. We also found that the trapping time caused by deep defects increased from 25.6 ps to 76 ps, and there were significantly reduced defect emissions in CSS-QDs. Moreover, the ZnSe midshell leads to a significantly increased density of higher-energy hole states above the valence band-edge, which may reduce the probability of Auger recombination caused by the positive trion. This work enhances our understanding of the excellent performance of the CSS-QDs applied to light-emitting diodes, and is likely to be helpful for the further optimization and design of optoelectronic devices based on the CSS-QDs.

Ultrafast Momentum-Resolved Hot Electron Dynamics in the Two-Dimensional Topological Insulator Bismuthene.

Two-dimensional quantum spin Hall (QSH) insulators are a promising material class for spintronic applications based on topologically protected spin currents in their edges. Yet, they have not lived up to their technological potential, as experimental realizations are scarce and limited to cryogenic temperatures. These constraints have also severely restricted characterization of their dynamical properties. Here, we report on the electron dynamics of the novel room-temperature QSH candidate bismuthene after photoexcitation using time- and angle-resolved photoemission spectroscopy. We map the transiently occupied conduction band and track the full relaxation pathway of hot photocarriers. Intriguingly, we observe photocarrier lifetimes much shorter than those in conventional semiconductors. This is ascribed to the presence of topological in-gap states already established by local probes. Indeed, we find spectral signatures consistent with these earlier findings. Demonstration of the large band gap and the view into photoelectron dynamics mark a critical step toward optical control of QSH functionalities.

Ultrafast carrier dynamics in a monolayer MoS2at carrier densities well above Mott density.

Due to the growing interest in monolayer (ML) molybdenum disulfide (MoS2) in several optoelectronic applications like lasers, detectors, sensors, it is important to understand the ultrafast behavior of the excited carriers in this material. In this article, a comprehensive study of the charge carrier dynamics of a monolayer MoS2flake has been studied using transient transmission technique near A-exciton under high excitation densities well above the Mott density. Fluence dependent studies has been carried out to understand the origin of the processes which modifies its optical response under excitation. The dissociation of excitons leads to an observed fast bandgap renormalization. At later times when large number of carriers relax the remaining carriers forms excitons leading to a bleaching effect.

Evaluating Lead Halide Perovskite Nanocrystals as a Spin Laser Gain Medium.

Spin-polarized charge endows conventional lasers with not only new functionalities but also reduced lasing thresholds thanks to the lifting of spin degeneracy. II-VI and III-V semiconductors have been extensively investigated as spin laser gain mediums; however, the degree of polarization is limited by the light hole and heavy hole degeneracy. Herein, we evaluate the potential of CsPbBr3 nanocrystals─ones that are featured with low band-edge degeneracy and therefore a high degree of polarization as a result of inverted band structure and large spin-orbit coupling─as a gain medium for spin lasers. Our experiment and numerical modeling results reveal that, within the spin relaxation lifetime, the optical gain threshold can be depressed by polarizing the charge using circularly polarized photoexcitation. However, prolonging the spin relaxation lifetime is required to realize a spin laser.

Optical-Gain-based Sensing Using Inorganic-Ligand-Passivated Colloidal Quantum Dots.

Thanks to their extremely large surface-to-volume ratio, colloidal quantum dots are potential high-performance sensing materials. However, previous sensing works using their spontaneous emission suffer from low sensitivities. The absence of an amplification process and the presence of the steric hindrance of long-chain organic ligands are two possible causations. Herein we propose that these two issues can be circumvented by using the amplified spontaneous emission of colloidal quantum dots capped by short-chain inorganic ligands. To exemplify this concept, we performed humidity sensing and observed a ∼31 times enhancement in sensitivity. Meanwhile, we found that the amplified spontaneous emission threshold power was reduced by 34% in a high humidity environment. On the basis of our transient absorption measurements, we attribute these observations to the mitigation of ultrafast subpicosecond trapping processes, which are enabled by the absorption of water molecules.

Germanium Nanosheets with Dirac Characteristics as a Saturable Absorber for Ultrafast Pulse Generation.

Bulk germanium as a group-IV photonic material has been widely studied due to its relatively large refractive index and broadband and low propagation loss from near-infrared to mid-infrared. Inspired by the research of graphene, the 2D counterpart of bulk germanium, germanene, has been discovered and the characteristics of Dirac electrons have been observed. However, the optical properties of germanene still remain elusive. In this work, several layers of germanene are prepared with Dirac electronic characteristics and its morphology, band structure, carrier dynamics, and nonlinear optical properties are systematically investigated. It is surprisingly found that germanene has a fast carrier-relaxation time comparable to that of graphene and a relatively large nonlinear absorption coefficient, which is an order of magnitude higher than that of graphene in the near-infrared wavelength range. Based on these findings, germanene is applied as a new saturable absorber to construct an ultrafast mode-locked laser, and sub-picosecond pulse generation in the telecommunication band is realized. The results suggest that germanene can be used as a new type of group-IV material for various nonlinear optics and photonic applications.

Time resolved study of carrier relaxation dynamics inα-Al2O3.

The relaxation of excited carriers in α-Al2O3is complex, depending for instance on the type of ionizing radiation. Using femtosecond time-resolved absorption spectroscopy, we can induce a controllable excitation density on a wide range, and follow the relaxation dynamics from 30 fs to 7 ns. We show that the excited carrier decay is non-exponential: it is dependent on the pump intensity, i.e. on the initial carrier concentration. We describe the relaxation as a two-steps process, involving the trapping of initially free electron-hole pairs, followed by recombination. A numerical model taking into account the initial electronic excitation by multiphoton absorption and the subsequent relaxation allows to quantitatively reproduce the amplitude of the measured absorption and its temporal evolution.

Niobium Carbide MXenes with Broad-Band Nonlinear Optical Response and Ultrafast Carrier Dynamics.

Exploring the nonlinear photonics of emerging promising two-dimensional (2D) materials like MXenes will boost the development of broad-band optoelectronic and photonic applications. In this paper, the broad-band nonlinear optical response and the excited-carrier dynamics of an emerging MXene, Nb2C, are systematically investigated for the wavelength range of visible to the near-infrared band. The obtained nonlinear optical response shows a wavelength and excitation intensity dependence. The imaginary part of the third-order nonlinear optical susceptibility Imχ(3) and figure of merit were found to be -1.4 × 10-10 esu and 7.5 × 10-12 esu cm, respectively. The interesting nonlinear absorption response inversion properties (e.g., a shift from saturable absorption to two-photon absorption) of Nb2C nanosheets in the near-infrared promise possible important applications in nonlinear photonics, such as an optical switch. We also demonstrate that the wavelength-dependent relaxation times consist of two different relaxation components, that is, time constants in which one is hundreds of femtoseconds and the other is several picoseconds. Our results indicate promising potential in near-infrared nanophotonic applications of 2D Nb2C and offer a promising candidate for 2D-material-based nanophotonic devices and beyond.

Efficient Plasmon-Mediated Energy Funneling to the Surface of Au@Pt Core-Shell Nanocrystals.

The structure and ultrafast photodynamics of ∼8 nm Au@Pt core-shell nanocrystals with ultrathin (<3 atomic layers) Pt-Au alloy shells are investigated to show that they meet the design principles for efficient bimetallic plasmonic photocatalysis. Photoelectron spectra recorded at two different photon energies are used to determine the radial concentration profile of the Pt-Au shell and the electron density near the Fermi energy, which play a key role in plasmon damping and electronic and thermal conductivity. Transient absorption measurements track the flow of energy from the plasmonic core to the electronic manifold of the Pt shell and back to the lattice of the core in the form of heat. We show that strong coupling to the high density of Pt(d) electrons at the Fermi level leads to accelerated dephasing of the Au plasmon on the femtosecond time scale, electron-electron energy transfer from Au(sp) core electrons to Pt(d) shell electrons on the sub-picosecond time scale, and enhanced thermal resistance on the 50 ps time scale. Electron-electron scattering efficiently funnels hot carriers into the ultrathin catalytically active shell at the nanocrystal surface, making them available to drive chemical reactions before losing energy to the lattice via electron-phonon scattering on the 2 ps time scale. The combination of strong broadband light absorption, enhanced electromagnetic fields at the catalytic metal sites, and efficient delivery of hot carriers to the catalyst surface makes core-shell nanocrystals with plasmonic metal cores and ultrathin catalytic metal shells promising nanostructures for the realization of high-efficiency plasmonic catalysts.

Manifestation of Kinetic Inductance in Terahertz Plasmon Resonances in Thin-Film Cd3As2.

Three-dimensional (3D) semimetals have been predicted and demonstrated to have a wide variety of interesting properties associated with their linear energy dispersion. In analogy to two-dimensional (2D) Dirac semimetals, such as graphene, Cd3As2 has shown ultrahigh mobility and large Fermi velocity and has been hypothesized to support plasmons at terahertz frequencies. In this work, we experimentally demonstrate synthesis of high-quality large-area Cd3As2 thin films through thermal evaporation as well as the experimental realization of plasmonic structures consisting of periodic arrays of Cd3As2 stripes. These arrays exhibit sharp resonances at terahertz frequencies with associated quality factors ( Q) as high as ∼3.7 (at 0.82 THz). Such spectrally narrow resonances can be understood on the basis of a long momentum scattering time, which in our films can approach ∼1 ps at room temperature. Moreover, we demonstrate an ultrafast tunable response through excitation of photoinduced carriers in optical pump/terahertz probe experiments. Our results evidence that the intrinsic 3D nature of Cd3As2 might provide for a very robust platform for terahertz plasmonic applications. Moreover, the long momentum scattering time as well as large kinetic inductance in Cd3As2 also holds enormous potential for the redesign of passive elements such as inductors and hence can have a profound impact in the field of RF integrated circuits.

Transient SHG Imaging on Ultrafast Carrier Dynamics of MoS2 Nanosheets.

Understanding the collaborative behaviors of the excitons and phonons that result from light-matter interactions is important for interpreting and optimizing the underlying fundamental physics at work in devices made from atomically thin materials. In this study, the generation of exciton-coupled phonon vibration from molybdenum disulfide (MoS2 ) nanosheets in a pre-excitonic resonance condition is reported. A strong rise-to-decay profile for the transient second-harmonic generation (TSHG) of the probe pulse is achieved by applying substantial (20%) beam polarization normal to the nanosheet plane, and tuning the wavelength of the pump beam to the absorption of the A-exciton. The time-dependent TSHG signals clearly exhibit acoustic phonon generation at vibration modes below 10 cm-1 (close to the Γ point) after the photoinduced energy is transferred from exciton to phonon in a nonradiative fashion. Interestingly, by observing the TSHG signal oscillation period from MoS2 samples of varying thicknesses, the speed of the supersonic waves generated in the out-of-plane direction (Mach 8.6) is generated. Additionally, TSHG microscopy reveals critical information about the phase and amplitude of the acoustic phonons from different edge chiralities (armchair and zigzag) of the MoS2 monolayers. This suggests that the technique could be used more broadly to study ultrafast physics and chemistry in low-dimensional materials and their hybrids with ultrahigh fidelity.

Sub-Picosecond Auger-Mediated Hole-Trapping Dynamics in Colloidal CdSe/CdS Core/Shell Nanoplatelets.

Quasi-two-dimensional colloidal nanoplatelets (NPLs) have recently emerged as a class of semiconductor nanomaterials whose atomically precise monodisperse thicknesses give rise to narrow absorption and emission spectra. However, the sub-picosecond carrier dynamics of NPLs at the band edge remain largely unknown, despite their importance in determining the optoelectronic properties of these materials. Here, we use a combination of femtosecond transient absorption spectroscopy and nonadiabatic molecular dynamics simulations to investigate the early time carrier dynamics of CdSe/CdS core/shell NPLs. Band-selective probing reveals sub-picosecond Auger-mediated trapping of holes with an effective second-order rate constant of 3.5 ± 1.0 cm2/s. Concomitant spectral blue shifts that are indicative of Auger hole heating are found to occur on the same time scale as the sub-picosecond trapping dynamics, whereas spectral red shifts that emerge at low excitation densities furnish an electron-cooling time scale of 0.84 ± 0.09 ps. Finally, nonadiabatic molecular dynamics simulations relate the observed sub-picosecond Auger-mediated hole-trapping dynamics to a shallow trap state that originates from the incomplete passivation of dangling bonds on the NPL surface.