Dual-Modal FexCuySe and Upconversion Nanoparticle Assemblies for Intracellular MicroRNA-21 Detection.

In situ quantification and imaging of low-level intracellular microRNAs (miRs) are important areas in biosensor research. Herein, DNA-driven FexCuySe@upconversion nanoparticle (UCNP) core@satellite nanostructures were developed to probe microRNA-21 (miR-21). FexCuySe@UCNP probes displayed dual signals: upconversion luminescence (UCL) and magnetic resonance imaging (MRI). In the presence of miR-21, the luminescence signal was restored and the T2 value was significantly increased because of dissociation of UCNPs from the assemblies. There was a good linear relationship between the dual signals and the expression levels of miR-21 in the range of 0.035-31.824 amol/ngRNA. The limit of detection (LOD) was 0.0058 amol/ngRNA for the luminescence intensity and 0.0182 amol/ngRNA for the MRI signal. This method opens a new avenue for intracellular miR-21 detection with high sensitivity and specificity.

Green synthesized selenium doped zinc oxide nano-antibiotic: synthesis, characterization and evaluation of antimicrobial, nanotoxicity and teratogenicity potential.

A facile, green synthesis of selenium doped zinc oxide nano-antibiotic (Se-ZnO-NAB) using the Curcuma longa extract is reported to combat the increased emergence of methicillin-resistant Staphylococcus aureus (MRSA). The developed Se-ZnO-NAB were characterized for their physicochemical parameters and extensively evaluated for their toxicological potential in an animal model. The prepared Se-ZnO-NABs were characterized via Fourier transformed infrared spectroscopy to get functional insight into their surface chemistry, scanning electron microscopy revealing the polyhedral morphology with a size range of 36 ± 16 nm, having -28.9 ± 6.42 mV zeta potential, and inductively coupled plasma optical emission spectrometry confirming the amount of Se and Zn to be 14.43 and 71.70 mg L-1 respectively. Moreover, the antibacterial activity against MRSA showed significantly low minimum inhibitory concentration at 6.2 µg mL-1 when compared against antibiotics. Also, total protein content and reactive oxygen species production in MRSA, under the stressed environment of Se-ZnO-NAB, significantly (p < 0.05) decreased compared to the negative control. Moreover, the results of acute oral toxicity in rats showed moderate variations in blood biochemistry and histopathology of vital organs. The teratogenicity and fetal evaluations also revealed some signs of toxicity along with changes in biochemical parameters. The overall outcomes suggest that Se-ZnO-NAB can be of significant importance for combating multi-drug resistance but must be used with extreme caution, particularly in pregnancy, as moderate toxicity was observed at a toxic dose of 2000 mg kg-1.

Photothermal augment stromal disrupting effects for enhanced Abraxane synergy chemotherapy in pancreatic cancer PDX mode.

Cancer-associated fibroblasts (CAFs) are crucial for forming the desmoplastic stroma that is associated with chemoresistance in pancreatic ductal adenocarcinoma (PDAC). In the clinic, depleting dense stroma in PDAC tumor tissue is a promising chemotherapeutic strategy. In this study, we report that the local hyperthermia can reduce the number of CAFs in the PDAC PDX mouse mode, which further augments chemotherapeutic efficiency in the PDAC therapy. To achieve this goal, a photothermal-chemotherapeutic agent termed as Abraxane@MoSe2 as a vehicle-saving theranostic probe is prepared by simply mixing an FDA-approved Abraxane and hydrophobic MoSe2 nanosheets via electrostatic and hydrophobic interactions. After labeling with indocyanine green (ICG) dye on the Abraxane@MoSe2, a relatively high fluorescence signal (near infrared second (NIR II)) in PDX tumors can be obtained, which can be precisely imaging-guide local photothermal-chemotherapy upon the 808 nm laser irradiation in vivo. Importantly, the synergy therapeutic efficiency in PDAC is enhanced by the photothermal effect reduction of the number of CAFs, which is confirmed viaα-SMA and vimentin immunofluorescence analysis. This combined therapeutic strategy may provide a new sight for PDAC therapy.

Development of an amorphous selenium-based photodetector driven by a diamond cold cathode.

Amorphous-selenium (a-Se) based photodetectors are promising candidates for imaging devices, due to their high spatial resolution and response speed, as well as extremely high sensitivity enhanced by an internal carrier multiplication. In addition, a-Se is reported to show sensitivity against wide variety of wavelengths, including visible, UV and X-ray, where a-Se based flat-panel X-ray detector was proposed. In order to develop an ultra high-sensitivity photodetector with a wide detectable wavelength range, a photodetector was fabricated using a-Se photoconductor and a nitrogen-doped diamond cold cathode. In the study, a prototype photodetector has been developed, and its response to visible and ultraviolet light are characterized.

Red emissive CuInS2-based nanocrystals: a potential phosphor for warm white light-emitting diodes.

We here report the integration of red emissive CuInS(2) based nanocrysals as a potential red phosphor for warm light generation. By combining red emissive CuInS(2) based nanocrysals with commercial yellow emissive YAG:Ce and green emissive Eu(2+) doped silicate phosphors, we fabricated warm white light-emitting diodes with high color rendering index up to ~92, high luminous efficiency of 45~60 lm/W and color temperature less than 4000K.

Influence of speciation on the response from selenium to UV-photochemical vapor generation.

By exposure to appropriate UV intensities, rapid and quantitative oxidation/reduction of inorganic selenite, selenate and several organoselenium compounds representative of those of biochemical/metabolic interest, including selenomethionine, selenobetaine, L-selenocystine, selenomethylselenocysteine, γ-glutamyl-seleno-methylselenocysteine and selenocystamine, is achieved. In the presence of acetic acid, quantitative conversion to volatile SeH(2) and SeCO occurs using a flow-through system comprising a highly efficient 40 W UV lamp for oxidation in tandem with a lower power 8 W UV photocatalytic reactor utilizing a thin-film coating of titania. The volatile reduced species are detected by atomic absorption spectrometry using a heated quartz tube atomizer. Direct photochemical conversion of selenite, selenomethionine, L-selenocystine, γ-glutamyl-Se-methylselenocysteine and selenocystamine occurs in the presence of 5% acetic acid, following exposure to an 8 W UV field, to yield volatile detectable species, whereas selenobetaine and selenate are unresponsive unless the latter is first subjected to oxidation by exposure to a highly efficient 40 W UV lamp and the selenate reduced in the presence of titania.

Measured and calculated K-fluorescence effects on the MTF of an amorphous-selenium based CCD x-ray detector.

PURPOSE: Theoretical reasoning suggests that direct conversion digital x-ray detectors based upon photoconductive amorphous-selenium (a-Se) could attain very high values of the MTF (modulation transfer function) at spatial frequencies well beyond 20 cycles mm(-1). One of the fundamental factors affecting resolution loss, particularly at x-ray energies just above the K-edge of selenium (12.66 keV), is the K-fluorescence reabsorption mechanism, wherein energy can be deposited in the detector at locations laterally displaced from the initial x-ray interaction site. This paper compares measured MTF changes above and below the Se K-edge of a CCD based a-Se x-ray detector with theoretical expectations. METHODS: A prototype 25 µm sampling pitch (Nyquist frequency = 20 cycles mm(-1), 200 µm thick a-Se layer based x-ray detector, utilizing a specialized CCD readout device (200 × 400 area array), was used to make edge images with monochromatic x-rays above and below the K-edge of Se. A vacuum double crystal monochromator, exposed to polychromatic x-rays from a synchrotron, formed the monochromatic x-ray source. The monochromaticity of the x-rays was 99% or better. The presampling MTF was determined using the slanted edge method. The theory modeling the MTF performance of the detector includes the basic x-ray interaction physics in the a-Se layer as well as effects related to the operation of the CCD and charge trapping at a blocking layer present at the CCD/a-Se interface. RESULTS: The MTF performance of the prototype a-Se CCD was reduced from the theoretical value prescribed by the basic Se x-ray interaction physics, principally by the presence of a blocking layer. Nevertheless, the K-fluorescence reduction in the MTF was observed, approximately as predicted by theory. For the CCD prototype detector, at five cycles mm(-1), there was a 14% reduction of the MTF, from a value of 0.7 below the K-edge of Se, to 0.6 just above the K-edge. CONCLUSIONS: The MTF of an a-Se x-ray detector has been measured using monochromatic x-rays above and below the K-edge of selenium. The MTF is poorer above the K-edge by an amount consistent with theoretical expectations.

Spatiotemporal Monte Carlo transport methods in x-ray semiconductor detectors: application to pulse-height spectroscopy in a-Se.

PURPOSE: The authors describe a detailed Monte Carlo (MC) method for the coupled transport of ionizing particles and charge carriers in amorphous selenium (a-Se) semiconductor x-ray detectors, and model the effect of statistical variations on the detected signal. METHODS: A detailed transport code was developed for modeling the signal formation process in semiconductor x-ray detectors. The charge transport routines include three-dimensional spatial and temporal models of electron-hole pair transport taking into account recombination and trapping. Many electron-hole pairs are created simultaneously in bursts from energy deposition events. Carrier transport processes include drift due to external field and Coulombic interactions, and diffusion due to Brownian motion. RESULTS: Pulse-height spectra (PHS) have been simulated with different transport conditions for a range of monoenergetic incident x-ray energies and mammography radiation beam qualities. Two methods for calculating Swank factors from simulated PHS are shown, one using the entire PHS distribution, and the other using the photopeak. The latter ignores contributions from Compton scattering and K-fluorescence. Comparisons differ by approximately 2% between experimental measurements and simulations. CONCLUSIONS: The a-Se x-ray detector PHS responses simulated in this work include three-dimensional spatial and temporal transport of electron-hole pairs. These PHS were used to calculate the Swank factor and compare it with experimental measurements. The Swank factor was shown to be a function of x-ray energy and applied electric field. Trapping and recombination models are all shown to affect the Swank factor.

Effect of repeated x-ray exposure on the resolution of amorphous selenium based x-ray imagers.

PURPOSE: A numerical model and the experimental methods to study the x-ray exposure dependent change in the modulation transfer function (MTF) of amorphous selenium (a-Se) based active matrix flat panel imagers (AMFPIs) are described. The physical mechanisms responsible for the x-ray exposure dependent change in MTF are also investigated. METHODS: A numerical model for describing the x-ray exposure dependent MTF of a-Se based AMFPIs has been developed. The x-ray sensitivity and MTF of an a-Se AMFPI have been measured as a function of exposure. The instantaneous electric field and free and trapped carrier distributions in the photoconductor layer are obtained by numerically solving the Poisson's equation, continuity equations, and trapping rate equations using the backward Euler finite difference method. From the trapped carrier distributions, a method for calculating the MTF due to incomplete charge collection is proposed. RESULTS: The model developed in this work and the experimental data show a reasonably good agreement. The model is able to simultaneously predict the dependence of the sensitivity and MTF on accumulated exposure at different applied fields and bias polarities, with the same charge transport parameters that are typical of the particular a-Se photoconductive layer that is used in these AMFPIs. Under negative bias, the MTF actually improves with the accumulated x-ray exposure while the sensitivity decreases. The MTF enhancement with exposure decreases with increasing applied field. CONCLUSIONS: The most prevalent processes that control the MTF under negative bias are the recombination of drifting holes with previously trapped electrons (electrons remain in deep traps due to their long release times compared with the time scale of the experiments) and the deep trapping of drifting holes and electrons.

Laser ablation of ternary As-S-Se glasses and time-of-flight mass spectrometric study.

Ternary chalcogenide As-S-Se glasses, important for optics, computers, material science and technological applications, are often made by pulsed laser deposition (PLD) technology but the plasma composition formed during the process is mostly unknown. Therefore, the formation of clusters in a plasma plume from different glasses was followed by laser desorption ionization (LDI) or laser ablation (LA) time-of-flight mass spectrometry (TOF MS) in positive and negative ion modes. The LA of glasses of different composition leads to the formation of a number of binary As(p)S(q), As(p)Se(r) and ternary As(p)S(q)Se(r) singly charged clusters. Series of clusters with the ratio As:chalcogen = 3:3 (As(3)S(3)(+), As(3)S(2)Se(+), As(3)SSe(2)(+)), 3:4 (As(3)S(4)(+), As(3)S(3)Se(+), As(3)S(2)Se(2)(+), As(3)SSe(3)(+), As(3)Se(4)(+)), 3:1 (As(3)S(+), As(3)Se(+)), and 3:2 (As(3)S(2)(+), As(3)SSe(+), As(3)Se(2)(+)), formed from both bulk and PLD-deposited nano-layer glass, were detected. The stoichiometry of the As(p)S(q)Se(r) clusters was determined via isotopic envelope analysis and computer modeling. The structure of the clusters is discussed.

Microwave-assisted synthesis of Sb2Se3 submicron rods, compared with those of Bi2Te3 and Sb2Te3.

Orthorhombic Sb(2)Se(3) submicron rods were prepared from antimony sodium tartrate and Se powder via a microwave-assisted chemical method. The products were characterized by x-ray powder diffraction (XRD), transmission electron microscope (TEM) and selected-area electron diffraction (SAED) techniques. The reaction mechanism and the morphology of the product were studied in detail in comparison with those in the syntheses of Bi(2)Te(3) and Sb(2)Te(3). The synthesis of Sb(2)Se(3) was based on the polyol reducing process and microwaves played an important role. The morphologies of the compounds were mainly determined by their inherent anisotropic crystal structures. The optical properties of as-prepared Sb(2)Se(3) were also characterized by UV-vis diffuse reflectance spectroscopy, and the bandgap (E(g)) can be derived to be 1.16 eV, which is suitable for applications in photovoltaic conversion.

X-ray imaging with amorphous selenium: pulse height measurements of avalanche gain fluctuations.

Avalanche multiplication in amorphous selenium (a-Se) can provide a large, adjustable gain for active matrix flat panel imagers (AMFPI), enabling quantum noise limited x-ray imaging during both radiography and fluoroscopy. In the case of direct conversion AMFPI, the multiplication factor for each x ray is a function of its depth of interaction, and the resulting variations in gain can reduce the detective quantum efficiency (DQE) of the system. An experimental method was developed to measure gain fluctuations by analyzing images of individual x rays that were obtained using a video camera with an a-Se target operated in avalanche mode. Pulse height spectra (PHS) of the charge produced per x ray were recorded for monoenergetic 30.9, 49.4, and 73.8 keV x-ray sources. The rapid initial decay and long tail of each PHS can be explained by a model in which positive charge dominates the initiation of avalanche. The Swank information factor quantifies the effect of gain fluctuation on DQE and was calculated from the PHS. The information factor was found to be 0.5 for a 25 microm a-Se layer with a maximum gain of approximately 300. Changing the energy of the incident x ray influenced the range of the primary photoelectron and noticeably affected the tail of the experimental PHS, but did not significantly change the avalanche Swank factor.

Microwave-assisted copper-catalyzed preparation of diaryl chalcogenides.

Diaryl chalcogenide synthesis employing diaryl dichalcogenides and aryl halides as starting materials in the presence of excess magnesium and a catalytic amount of CuI/bipyridyl is significantly improved by microwave heating. Reaction times can be reduced from 2 to 3 days to 6-8 h. Both aryl bromides and aryl chlorides can be used as substrates in the substitution reaction. The procedure is useful not only for diaryl sulfide and diaryl selenide synthesis but also for the preparation of unsymmetrical diaryl tellurides. Starting from suitable aryl halides, the novel microwave-assisted procedure was used for the facile preparation of novel chalcogen analogues (PhS-, PhSe-, and PhTe-) of various antioxidants (ethoxyquin and 3-pyridinol). Attempts to use dialkyl dichalcogenides for the coupling of alkylchalcogeno moieties to aryl halides were only successful in the case of long-chain (such as n-octyl) disulfides and diselenides.

The x-ray time of flight method for investigation of ghosting in amorphous selenium-based flat panel medical x-ray imagers.

Amorphous selenium (a-Se) based real-time flat-panel imagers (FPIs) are finding their way into the digital radiology department because they offer the practical advantages of digital x-ray imaging combined with an image quality that equals or outperforms that of conventional systems. The temporal imaging characteristics of FPIs can be affected by ghosting (i.e., radiation-induced changes of sensitivity) when the dose to the detector is high (e.g., portal imaging and mammography) or the images are acquired at a high frame rate (e.g., fluoroscopy). In this paper, the x-ray time-of-flight (TOF) method is introduced as a tool for the investigation of ghosting in a-Se photoconductor layers. The method consists of irradiating layers of a-Se with short x-ray pulses. From the current generated in the a-Se layer, ghosting is quantified and the ghosting parameters (charge carrier generation rate and carrier lifetimes and mobilities) are assessed. The x-ray TOF method is novel in that (1) x-ray sensitivity (S) and ghosting parameters can be measured simultaneously, (2) the transport of both holes and electrons can be isolated, and (3) the method is applicable to the practical a-Se layer structure with blocking contacts used in FPIs. The x-ray TOF method was applied to an analysis of ghosting in a-Se photoconductor layers under portal imaging conditions, i.e., 1 mm thick a-Se layers, biased at 5 V/ microm, were irradiated using a 6 MV LINAC x-ray beam to a total dose (ghosting dose) of 30 Gy. The initial sensitivity (S0) of the a-Se layers was 63 +/- 2 nC cm(-2) cGy(-1). It was found that S decreases to 30% of S0 after a ghosting dose of 5 Gy and to 21% after 30 Gy at which point no further change in S occurs. At an x-ray intensity of 22 Gy/s (instantaneous dose rate during a LINAC x-ray pulse), the charge carrier generation rate was 1.25 +/- 0.1 x 10(22) ehp m(-3) s(-1) and, to a first approximation, independent of the ghosting dose. However, both hole and electron transport showed a strong dependence on the ghosting dose: hole transport decreased by 61%, electron transport by up to approximately 80%. Therefore, degradation of both hole and electron transport due to the recombination of mobile charge carriers with trapped carriers (of opposite polarity) were identified as the main cause of ghosting in this study.

Role of free cadmium and selenium ions in the potential mechanism for the enhancement of photoluminescence of CdSe quantum dots under ultraviolet irradiation.

The present study describes an enhancement of the photoluminescence of CdSe quantum dots under long-term ultraviolet irradiation in organic solvents. The photoenhancement effect followed multiexponential kinetics and was found to depend on several factors: intensity of ultraviolet light, polarity of the solvent, presence of capping agents on the nanocrystal surface, and presence of free Cd and Se ions in the solution. High intensity ultraviolet irradiation provoked a rapid enhancement of the photoluminescence of CdSe nanocrystals, reaching the maximum with subsequent photoluminescence decay. Low-intensity ultraviolet irradiation provoked a comparatively slow enhancement of the photoluminescence of CdSe nanocrystals, reaching saturation after 5-6 hours of irradiation in organic solvents (butanol and chloroform). The photoenhancement effect was reversible or irreversible depending on the additional ingredients. The role of free Cd and Se in these processes was clarified. The results are discussed in the context of ultraviolet induced liberation of free Cd and Se ions from the nanocrystal surface and their hypothetical reversible deposition with trapping of the surface holes and influencing the efficiency of radiative versus nonradiative exciton decay during the enhancement of photoluminescence.

Monodispersed spherical colloids of Se@CdSe: synthesis and use as building blocks in fabricating photonic crystals.

Monodispersed spherical core-shell colloids of Se@Ag(2)Se have been exploited as a chemical template to synthesize Se@CdSe core-shell particles using a cation-exchange reaction. A small amount of tributylphosphine could facilitate the replacement of Ag(+) by Cd(2+) in methanol at 50 degrees C to complete the conversion within 150 min. The orthorhombic structure of beta-Ag(2)Se changed to a well-defined wurtzite lattice for CdSe. The CdSe shells could be converted back to beta-Ag(2)Se by reacting with AgNO(3) in methanol at room temperature. Because of the uniformity in size and high refractive index associated with the Se@CdSe core-shell colloids, they could serve as a new class of building blocks to fabricate photonic crystals with wide and strong stop bands.

Ghosting caused by bulk charge trapping in direct conversion flat-panel detectors using amorphous selenium.

Direct flat-panel detectors using amorphous selenium (a-Se) x-ray photoconductors are gaining wide-spread clinical use. The goal of our investigation is to understand the physical mechanisms responsible for ghosting, i.e., x-ray induced change in sensitivity that results in image persistence, so that the knowledge can be used to consistently minimize ghosting artifacts in a-Se flat-panel detectors. In this paper we will discuss the effect on x-ray sensitivity of charge trapping in a-Se, which is the dominant source for ghosting in a-Se flat-panel detectors. Our approach is to correlate ghosting in electroded a-Se detectors with the trapped charge concentration measured by the "time-of-flight" (TOF) method. All measurements were performed as a function of radiation exposure X of up to approximately 20 R at electric field strength's of E(Se)=5 and 10 V/microm. The results showed that the x-ray sensitivity decreased as a function of X and the amount of ghosting decreased with increasing E(Se). The shape of the TOF curves changed as a result of irradiation in a manner indicating trapped electrons in the bulk of a-Se. The density of trapped electrons n(t) increases as a function of X. A method was developed to determine the values of n(t) in the bulk of a-Se from the TOF measurements, and to predict the corresponding change in x-ray sensitivity. Our results showed that a recombination coefficient consistent with that predicted by Langevin produced good agreement between calculated and measured x-ray sensitivity changes. Thus it can be concluded that the trapping of electrons in the bulk of a-Se and their subsequent recombination with x-ray generated free holes is the dominant mechanism for ghosting in a-Se.

Physical characterization of a prototype selenium-based full field digital mammography detector.

The purpose of this study was to measure experimentally the physical performance of a prototype mammographic imager based on a direct detection, flat-panel array design employing an amorphous selenium converter with 70 microm pixels. The system was characterized for two different anode types, a molybdenum target with molybdenum filtration (Mo/Mo) and a tungsten target with rhodium filtration (W/Rh), at two different energies, 28 and 35 kVp, with approximately 2 mm added aluminum filtration. To measure the resolution, the presampled modulation transfer function (MTF) was measured using an edge method. The normalized noise power spectrum (NNPS) was measured by two-dimensional Fourier analysis of uniformly exposed mammograms. The detective quantum efficiencies (DQEs) were computed from the MTFs, the NNPSs, and theoretical ideal signal to noise ratios. The MTF was found to be close to its ideal limit and reached 0.2 at 11.8 mm(-1) and 0.1 at 14.1 mm(-1) for images acquired at an RQA-M2 technique (Mo/Mo anode, 28 kVp, 2 mm Al). Using a tungsten technique (MW2; W/Rh anode, 28 kVp, 2 mm Al), the MTF went to 0.2 at 11.2 mm(-1) and to 0.1 at 13.3 mm(-1). The DQE reached a maximum value of 54% at 1.35 mm(-1) for the RQA-M2 technique at 1.6 microC/kg and achieved a peak value of 64% at 1.75 mm(-1) for the tungsten technique (MW2) at 1.9 microC/kg. Nevertheless, the DQE showed strong exposure and frequency dependencies. The results indicated that the detector offered high MTFs and DQEs, but structured noise effects may require improved calibration before clinical implementation.

Evaluation of the imaging properties of an amorphous selenium-based flat panel detector for digital fluoroscopy.

The imaging performance of an amorphous selenium (a-Se) flat-panel detector for digital fluoroscopy was experimentally evaluated using the spatial frequency dependent modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE). These parameters were investigated at beam qualities and exposures within the range typical of gastrointestinal fluoroscopic imaging (approximately 0.1 - 10 microR, 75 kV). The investigation does not take into consideration the detector cover, which in clinical use will lower the DQE measured here by its percent attenuation. The MTF was found to be less than the expected aperture response and the NPS was not white which together indicate presampling blurring. The cause of this blurring was attributed to charge trapping at the interface between two different layers of the a-Se. The effect on the DQE was also consistent with presampling blur, which reduces the aliasing in the NPS and thereby reduces the spatial frequency dependence of the DQE. (The DQE was independent of spatial frequency from 0.12 to 0.73 mm(-1) due to antialiasing of the NPS.) Moreover, the first zero of the measured MTF and the aperture response appeared at the same spatial frequency (6.66 mm(-1) for a pixel of 150 microm). Hence, the geometric fill factor (77%) was increased to an effective fill factor of 99 +/- 1%. A large scale ( approximately 32 pixels) correlation in the noise due to the configuration of the readout electronics caused increased noise power in the gate line NPS at low spatial frequency (< 0.1 mm(-1)). The DQE (f = 0) was exposure independent over a large range of exposures but became exposure dependent at low exposures due to the electronic noise.