Identification of III-N nanowire growth kinetics via a marker technique.
Nanotechnology
; 21(29): 295605, 2010 Jul 23.
Article
in En
| MEDLINE
| ID: mdl-20601752
ABSTRACT
By using a marker technique based on nanowire (NW) heterostructure, we have identified the Ga-limited and N-limited GaN NW growth regimes, which are shifted in comparison to those in two-dimensional GaN layers. The results show that the Ga atoms diffusing along NW sidewalls have a significant contribution to the NW vertical growth. By reducing the substrate temperature, Ga-rich conditions locally activate the lateral growth. In contrast to Ga atoms, the contribution of Al and N adatom diffusion to the NW vertical growth is negligible. Finally, the control of GaN/AlN heterostructures in NWs is demonstrated.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Type of study:
Diagnostic_studies
Language:
En
Journal:
Nanotechnology
Year:
2010
Document type:
Article