Topological insulator quantum dot with tunable barriers.
Nano Lett
; 12(1): 469-72, 2012 Jan 11.
Article
in En
| MEDLINE
| ID: mdl-22181853
ABSTRACT
Thin (6-7 quintuple layer) topological insulator Bi(2)Se(3) quantum dot devices are demonstrated using ultrathin (2-4 quintuple layer) Bi(2)Se(3) regions to realize semiconducting barriers which may be tuned from ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV and additional features implying excited states.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Main subject:
Semiconductors
/
Quantum Dots
Language:
En
Journal:
Nano Lett
Year:
2012
Document type:
Article