High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits. | Nanoscale;5(20): 9666-70, 2013 Oct 21. | MEDLINE

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High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits.

Song, H S; Li, S L; Gao, L; Xu, Y; Ueno, K; Tang, J; Cheng, Y B; Tsukagoshi, K.

Affiliation

Song HS; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China. jtang@mail.hust.edu.cn li.songlin@nims.go.jp Tsukagoshi.Kazuhito@ nims.go.jp.

Nanoscale ; 5(20): 9666-70, 2013 Oct 21.

Article in En | MEDLINE | ID: mdl-23989804

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Year: 2013 Document type: Article

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Year: 2013 Document type: Article