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Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes.
Chang, Hongliang; Chen, Zhaolong; Liu, Bingyao; Yang, Shenyuan; Liang, Dongdong; Dou, Zhipeng; Zhang, Yonghui; Yan, Jianchang; Liu, Zhiqiang; Zhang, Zihui; Wang, Junxi; Li, Jinmin; Liu, Zhongfan; Gao, Peng; Wei, Tongbo.
Affiliation
  • Chang H; Research and Development Center for Semiconductor Lighting Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China.
  • Chen Z; Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China.
  • Liu B; Center for Nanochemistry (CNC) Beijing Science and Engineering Center for Nanocarbons College of Chemistry and Molecular Engineering Peking University Beijing 100871 China.
  • Yang S; Beijing Graphene Institute (BGI) Beijing 100095 China.
  • Liang D; Beijing Graphene Institute (BGI) Beijing 100095 China.
  • Dou Z; Electron Microscopy Laboratory and International Center for Quantum Materials School of Physics Peking University Beijing 100871 China.
  • Zhang Y; Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China.
  • Yan J; State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China.
  • Liu Z; Research and Development Center for Semiconductor Lighting Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China.
  • Zhang Z; Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China.
  • Wang J; Beijing Graphene Institute (BGI) Beijing 100095 China.
  • Li J; Electron Microscopy Laboratory and International Center for Quantum Materials School of Physics Peking University Beijing 100871 China.
  • Liu Z; School of Electronics and Information Engineering Hebei University of Technology Tianjin 300401 China.
  • Gao P; Research and Development Center for Semiconductor Lighting Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China.
  • Wei T; Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China.
Adv Sci (Weinh) ; 7(15): 2001272, 2020 Aug.
Article in En | MEDLINE | ID: mdl-32775172
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Sci (Weinh) Year: 2020 Document type: Article
Fulltext
Print
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PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Sci (Weinh) Year: 2020 Document type: Article