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Engineering new limits to magnetostriction through metastability in iron-gallium alloys.
Meisenheimer, P B; Steinhardt, R A; Sung, S H; Williams, L D; Zhuang, S; Nowakowski, M E; Novakov, S; Torunbalci, M M; Prasad, B; Zollner, C J; Wang, Z; Dawley, N M; Schubert, J; Hunter, A H; Manipatruni, S; Nikonov, D E; Young, I A; Chen, L Q; Bokor, J; Bhave, S A; Ramesh, R; Hu, J-M; Kioupakis, E; Hovden, R; Schlom, D G; Heron, J T.
Affiliation
  • Meisenheimer PB; Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.
  • Steinhardt RA; Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
  • Sung SH; Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.
  • Williams LD; Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY, USA.
  • Zhuang S; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA.
  • Nowakowski ME; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.
  • Novakov S; Department of Physics, University of Michigan, Ann Arbor, MI, USA.
  • Torunbalci MM; OxideMEMS Lab, Purdue University, West Lafayette, IN, USA.
  • Prasad B; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
  • Zollner CJ; School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
  • Wang Z; School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
  • Dawley NM; Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
  • Schubert J; Peter Grünberg Institute (PGI-9) and JARA Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, Jülich, Germany.
  • Hunter AH; Michigan Center for Materials Characterization, University of Michigan, Ann Arbor, MI, USA.
  • Manipatruni S; Components Research, Intel Corporation, Hillsboro, OR, USA.
  • Nikonov DE; Components Research, Intel Corporation, Hillsboro, OR, USA.
  • Young IA; Components Research, Intel Corporation, Hillsboro, OR, USA.
  • Chen LQ; Department of Materials Science and Engineering, Penn State University, State College, PA, USA.
  • Bokor J; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.
  • Bhave SA; OxideMEMS Lab, Purdue University, West Lafayette, IN, USA.
  • Ramesh R; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
  • Hu JM; Materials Sciences Division, Lawrence Berkeley National Laboratory, CA, USA.
  • Kioupakis E; Department of Physics, University of California, Berkeley, CA, USA.
  • Hovden R; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA.
  • Schlom DG; Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.
  • Heron JT; Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.
Nat Commun ; 12(1): 2757, 2021 May 12.
Article in En | MEDLINE | ID: mdl-33980848
ABSTRACT
Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe1-xGax alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe1-xGax alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe1-xGax - [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10-5 s m-1. When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nat Commun Year: 2021 Document type: Article
Fulltext
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PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nat Commun Year: 2021 Document type: Article