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Metallization of Quantum Material GaTa4Se8 at High Pressure.
Deng, Hongshan; Zhang, Jianbo; Jeong, Min Yong; Wang, Dong; Hu, Qingyang; Zhang, Shuai; Sereika, Raimundas; Nakagawa, Takeshi; Chen, Bijuan; Yin, Xia; Xiao, Hong; Hong, Xinguo; Ren, Jichang; Han, Myung Joon; Chang, Jun; Weng, Hongming; Ding, Yang; Lin, Hai-Qing; Mao, Ho-Kwang.
Affiliation
  • Deng H; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
  • Zhang J; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
  • Jeong MY; Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea.
  • Wang D; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
  • Hu Q; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
  • Zhang S; Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
  • Sereika R; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
  • Nakagawa T; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
  • Chen B; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
  • Yin X; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
  • Xiao H; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
  • Hong X; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
  • Ren J; Nano and Heterogeneous Materials Center, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China.
  • Han MJ; Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea.
  • Chang J; College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, People's Republic of China.
  • Weng H; Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
  • Ding Y; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
  • Lin HQ; Beijing Computational Science Research Center, Beijing 100084, People's Republic of China.
  • Mao HK; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
J Phys Chem Lett ; 12(23): 5601-5607, 2021 Jun 17.
Article in En | MEDLINE | ID: mdl-34110170
ABSTRACT
Pressure is a unique thermodynamic variable to explore the phase competitions and novel phases inaccessible at ambient conditions. The resistive switching material GaTa4Se8 displays several quantum phases under pressure, such as a Jeff = 3/2 Mott insulator, a correlated quantum magnetic metal, and d-wave topological superconductivity, which has recently drawn considerable interest. Using high-pressure Raman spectroscopy, X-ray diffraction, extended X-ray absorption, transport measurements, and theoretical calculations, we reveal a complex phase diagram for GaTa4Se8 at pressures exceeding 50 GPa. In this previously unattained pressure regime, GaTa4Se8 ranges from a Mott insulator to a metallic phase and exhibits superconducting phases. In contrast to previous studies, we unveil a hidden correlation between the structural distortion and band gap prior to the insulator-to-metal transition, and the metallic phase shows superconductivity with structural and magnetic properties that are distinctive from the lower-pressure phase. These discoveries highlight that GaTa4Se8 is a unique material to probe novel quantum phases from a structural, metallicity, magnetism, and superconductivity perspective.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Phys Chem Lett Year: 2021 Document type: Article

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Phys Chem Lett Year: 2021 Document type: Article