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Etched-And-Regrown GaN P-N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching.
Li, Bingjun; Wang, Sizhen; Nami, Mohsen; Armstrong, Andrew M; Han, Jung.
Affiliation
  • Li B; Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States.
  • Wang S; Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States.
  • Nami M; Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States.
  • Armstrong AM; Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
  • Han J; Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States.
ACS Appl Mater Interfaces ; 13(44): 53220-53226, 2021 Nov 10.
Article in En | MEDLINE | ID: mdl-34706193
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Year: 2021 Document type: Article
Fulltext
Print
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PubMed Links
Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Year: 2021 Document type: Article