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Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures.
Park, Dae-Sung; Rata, Aurora Diana; Dahm, Rasmus Tindal; Chu, Kanghyun; Gan, Yulin; Maznichenko, Igor; Ostanin, Sergey; Trier, Felix; Baik, Hionsuck; Choi, Woo Seok; Choi, Chel-Jong; Kim, Young Heon; Rees, Gregory Jon; Gíslason, Hafliði Pétur; Buczek, Pawel Adam; Mertig, Ingrid; Ionescu, Mihai Adrian; Ernst, Arthur; Dörr, Kathrin; Muralt, Paul; Pryds, Nini.
Affiliation
  • Park DS; Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland.
  • Rata AD; Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark.
  • Dahm RT; Institute of Electrical and Micro Engineering, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland.
  • Chu K; Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany.
  • Gan Y; Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark.
  • Maznichenko I; Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland.
  • Ostanin S; Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
  • Trier F; Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany.
  • Baik H; Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany.
  • Choi WS; Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark.
  • Choi CJ; Korea Basic Science Institute, Seoul, 02841, Republic of Korea.
  • Kim YH; Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
  • Rees GJ; School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju, 54596, Republic of Korea.
  • Gíslason HP; Graduate School of Analytical Science and Technology, Chungnam National University, Daejeon, 34134, Republic of Korea.
  • Buczek PA; Department of Materials, University of Oxford, Oxford, OX1 3PH, UK.
  • Mertig I; Science Institute, University of Iceland, Reykjavik, IS-104, Iceland.
  • Ionescu MA; Department of Engineering and Computer Sciences, Hamburg University of Applied Sciences, 20099, Hamburg, Germany.
  • Ernst A; Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany.
  • Dörr K; Institute of Electrical and Micro Engineering, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland.
  • Muralt P; Max-Planck-Institut für Mikrostrukturphysik, 06120, Halle, Germany.
  • Pryds N; Institute of Theoretical Physics, Johannes Kepler University, Linz, 4040, Austria.
Adv Mater ; 35(32): e2300200, 2023 Aug.
Article in En | MEDLINE | ID: mdl-37154173
ABSTRACT
Complex oxide heterointerfaces contain a rich playground of novel physical properties and functionalities, which give rise to emerging technologies. Among designing and controlling the functional properties of complex oxide film heterostructures, vertically aligned nanostructure (VAN) films using a self-assembling bottom-up deposition method presents great promise in terms of structural flexibility and property tunability. Here, the bottom-up self-assembly is extended to a new approach using a mixture containing a 2Dlayer-by-layer film growth, followed by a 3D VAN film growth. In this work, the two-phase nanocomposite thin films are based on LaAlO3LaBO3 , grown on a lattice-mismatched SrTiO3001 (001) single crystal. The 2D-to-3D transient structural assembly is primarily controlled by the composition ratio, leading to the coexistence of multiple interfacial properties, 2D electron gas, and magnetic anisotropy. This approach provides multidimensional film heterostructures which enrich the emergent phenomena for multifunctional applications.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Year: 2023 Document type: Article

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Year: 2023 Document type: Article