Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy.
ACS Omega
; 8(47): 45088-45095, 2023 Nov 28.
Article
in En
| MEDLINE
| ID: mdl-38046304
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
ACS Omega
Year:
2023
Document type:
Article