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Flexible Organic Electrochemical Transistors for Energy-Efficient Neuromorphic Computing.
Zhu, Li; Lin, Junchen; Zhu, Yixin; Wu, Jie; Wan, Xiang; Sun, Huabin; Yu, Zhihao; Xu, Yong; Tan, Cheeleong.
Affiliation
  • Zhu L; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Lin J; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Zhu Y; Yongjiang Laboratory (Y-LAB), Ningbo 315202, China.
  • Wu J; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Wan X; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Sun H; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Yu Z; Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
  • Xu Y; College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Tan C; Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Nanomaterials (Basel) ; 14(14)2024 Jul 12.
Article in En | MEDLINE | ID: mdl-39057872
ABSTRACT
Brain-inspired flexible neuromorphic devices are of great significance for next-generation high-efficiency wearable sensing and computing systems. In this paper, we propose a flexible organic electrochemical transistor using poly[(bithiophene)-alternate-(2,5-di(2-octyldodecyl)- 3,6-di(thienyl)-pyrrolyl pyrrolidone)] (DPPT-TT) as the organic semiconductor and poly(methyl methacrylate) (PMMA)/LiClO4 solid-state electrolyte as the gate dielectric layer. Under gate voltage modulation, an electric double layer (EDL) forms between the dielectric layer and the channel, allowing the device to operate at low voltages. Furthermore, by leveraging the double layer effect and electrochemical doping within the device, we successfully mimic various synaptic behaviors, including excitatory post-synaptic currents (EPSC), paired-pulse facilitation (PPF), high-pass filtering characteristics, transitions from short-term plasticity (STP) to long-term plasticity (LTP), and demonstrate its image recognition and storage capabilities in a 3 × 3 array. Importantly, the device's electrical performance remains stable even after bending, achieving ultra-low-power consumption of 2.08 fJ per synaptic event at -0.001 V. This research may contribute to the development of ultra-low-power neuromorphic computing, biomimetic robotics, and artificial intelligence.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2024 Document type: Article

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2024 Document type: Article